The present invention relates to a lithographic apparatus and method.
A lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate. Lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that circumstance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern corresponding to an individual layer of the IC, and this pattern can be imaged onto a target portion (e.g. comprising part of, one or several dies) on a substrate (e.g. a silicon wafer) that has a layer of radiation-sensitive material (resist). In general, a single substrate will contain a network of adjacent target portions that are successively exposed. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion in one go, and so-called scanners, in which each target portion is irradiated by scanning the pattern through the beam in a given direction (the “scanning”-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction.
It is desirable to provide a lithographic apparatus or method which obviates or mitigates one or more of the problems of the prior art, whether identified herein or elsewhere.
According to an aspect of the invention, there is provided a lithographic apparatus, comprising a projection system configured to project a patterned radiation beam onto a target portion of a substrate; a substrate table configured to position the substrate such that the patterned beam is incident upon the substrate, the substrate table comprising a window; and a pre-aligner comprising a detector configured to view an alignment mark provided on a side of a substrate which is opposite to the location of the detector, and a controller arranged to measure the location of the alignment mark provided on the opposite side of the substrate, and to position the substrate onto the substrate table such that the alignment mark provided on the opposite side of the substrate is visible through the window of the substrate table.
According to an aspect of the invention, there is provided a method, comprising introducing a substrate into a pre-aligner of a lithographic apparatus; using a detector to measure the location of an alignment mark provided on a side of the substrate which is opposite to the location of the detector; and after measurement, putting the substrate onto a substrate table of the lithographic apparatus, the substrate being positioned on the substrate table such that the alignment mark provided on the opposite side of the substrate is visible through a window of the substrate table.
According to an aspect of the invention, there is provided a calibration method in which a substrate bearing an alignment mark is introduced into a pre-aligner of a lithographic apparatus; the position of the substrate is measured using an edge detector and the location of the alignment mark is measured using a detector; the substrate is flipped over so that the alignment mark is on a lower most surface of the substrate; after flipping over the substrate, the position of the substrate is measured using the edge detector, and the location of the alignment mark is measured using the detector via the detector looking through the substrate; and the difference between the measured locations of the alignment mark is determined.
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist) or a metrology or inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
The terms “radiation” and “beam” used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g. having a wavelength of 365, 248, 193, 157 or 126 nm) and extreme ultra-violet (EUV) radiation (e.g. having a wavelength in the range of 5-20 nm), as well as particle beams, such as ion beams or electron beams.
The term “patterning device” used herein should be broadly interpreted as referring to a device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
A patterning device may be transmissive or reflective. Examples of patterning device include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions; in this manner, the reflected beam is patterned.
The term “projection system” used herein should be broadly interpreted as encompassing various types of projection system, including refractive optical systems, reflective optical systems, and catadioptric optical systems, as appropriate for example for the exposure radiation being used, or for other factors such as the use of an immersion fluid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
As here depicted, the apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively, the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above).
The support structure holds the patterning device. It holds the patterning device in a way depending on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The support can use mechanical clamping, vacuum, or other clamping techniques, for example electrostatic clamping under vacuum conditions. The support structure may be a frame or a table, for example, which may be fixed or movable as required and which may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device”.
The illuminator IL receives a beam of radiation from a radiation source SO. The source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD comprising for example suitable directing mirrors and/or a beam expander. In other cases the source may be integral part of the apparatus, for example when the source is a mercury lamp. The source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
The illuminator IL may comprise adjusting means AM for adjusting the angular intensity distribution of the beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL generally comprises various other components, such as an integrator IN and a condenser CO. The illuminator provides a conditioned beam of radiation PB, having a desired uniformity and intensity distribution in its cross-section.
The illumination system may also encompass various types of optical components, including refractive, reflective, and catadioptric optical components for directing, shaping, or controlling the beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
The radiation beam PB is incident on the patterning device (e.g. mask) MA, which is held on the support structure MT. Having traversed the patterning device MA, the beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioning device PW and position sensor IF (e.g. an interferometric device), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the beam PB. Similarly, the first positioning device PM and another position sensor (which is not explicitly depicted in
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more support structures). In such “multiple stage” machines the additional tables and/or support structures may be used in parallel, or preparatory steps may be carried out on one or more tables and/or support structures while one or more other tables and/or support structures are being used for exposure.
The lithographic apparatus may also be of a type wherein the substrate is immersed in a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the final element of the projection system and the substrate. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
The depicted apparatus can be used in the following preferred modes:
1. In step mode, the support structure MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the beam PB is projected onto a target portion C in one go (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
2. In scan mode, the support structure MT and the substrate table WT are scanned synchronously while a pattern imparted to the beam PB is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the support structure MT is determined by the (de-)magnification and image reversal characteristics of the projection system PL. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
3. In another mode, the support structure MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the beam PB is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
Although there is only one moveable arm,
In use, a substrate W is passed from the substrate delivery apparatus 12 to the substrate table WT by the moveable arm 16. The substrate is then exposed using the lithographic apparatus. Following exposure the substrate W is retrieved from the substrate table WT by the moveable arm 16 and returned to the substrate delivery apparatus 12. A new substrate W is then passed from the substrate delivery apparatus 12 to the substrate table WT for exposure, and so on.
In some cases the pre-aligner may be provided with more than one arm (or some other mechanism), to allow the new substrate to be taken from the substrate delivery apparatus 12 before the exposed substrate has been returned to the substrate delivery apparatus. This increases the throughput of the lithographic apparatus by reducing the time taken to exchange substrates at the substrate table WT. In some cases the substrate delivery apparatus may include a substrate transport mechanism, such as a conveyor belt for example, to carry substrates to the moveable arm 16. This may be the case, for example, if the substrate delivery apparatus is capable of holding several batches of substrates.
The patterned substrate is inverted as shown in
As shown in
In use, radiation is directed from above the substrate table WT into arm 210a and/or arm 210b through window 220 onto mirror 212, through lenses 216 and 218, onto mirror 214 and then through window 222. The radiation passes upwards through the carrier 106 onto the respective alignment marks 104. Radiation is reflected off portions of the respective alignment marks 104 and returns along the respective arms of the optical system. The mirrors 212, 214 and lenses 216, 218 are arranged such that an image 224 is formed of each alignment mark 104. As will be appreciated, only one alignment mark 104 may be provided. Similarly, only one arm 210a or 210b may be provided or used at one time, if desired.
The image 224 of an alignment mark 104 act as a virtual alignment mark, and may be used for alignment by an alignment system (not shown) in the lithographic apparatus in the same way as an alignment mark which is conventionally positioned on an upper surface of the substrate 100. The alignment system may be a conventional alignment system. Such systems are well known to those skilled in the art and are therefore not described here.
It is conventional to use the edge-sensor 40 to measure the position of an edge of the substrate W, and thereby determine the position of the substrate W when it is in the pre-aligner. Using knowledge of the position of the substrate W in the pre-aligner it is possible to determine where on the substrate table WT the substrate W is located once the substrate has been passed to the substrate table. Generally speaking the position of the substrate W upon the substrate table WT is known to within around 10 microns.
An alignment sensor (not shown) within the lithographic apparatus is conventionally used to determine the position of target portions of the substrate, so as to ensure that a pattern projected onto the substrate is correctly aligned with a pattern previously provided in the target portions. The alignment sensor measures the position of alignment marks P1, P2 (see
The above described method for having one or more of the alignment marks located within the capture range of the alignment system may fail when applied to a thin substrate bonded to a transparent carrier.
In a conventional method the substrate W does not need to be accurately located at a specific position on the substrate table WT, provided that its position on the substrate table WT is known. This is because the substrate table WT may be moved in the x and y directions such that an alignment mark P1, P2 provided on an upper surface of the substrate falls within a capture range of the alignment system. This is not the case when using the front to backside alignment system.
Referring to
An embodiment of the invention helps to solve the above or other problem by using an imaging detector 42 which is located above the substrate 100 and carrier 106 in the pre-aligner 10. The imaging detector emits a beam of radiation which is non-actinic (i.e. radiation which has a wavelength sufficiently long that it will not cause conventional lithographic resist to be exposed). The radiation is used to illuminate an area of the substrate 100 which is seen by the imaging detector 42. The radiation emitted by the imaging detector 42 includes infrared radiation. When a thin substrate 100 is positioned beneath the imaging detector 42, the infrared radiation passes through the substrate 100 to a sufficient degree that the one or more alignment marks 104 on the bottom side of the substrate 100 are visible to the imaging detector 42. The imaging detector 42 is therefore able to accurately measure the location of the one or more alignment marks 104 on the bottom side of the substrate.
In use, a substrate carrier 106 (and associated substrate 100) is retrieved from the substrate delivery apparatus 12 using the moveable arm 16. The moveable arm 16 passes the substrate carrier 106 beneath the imaging detector 42. The imaging detector 42 measures the position of the one or more alignment marks 104 on the bottom side of the substrate 100. The substrate carrier 106 is then passed to the substrate table WT by the moveable arm 16, the substrate carrier being positioned on the substrate table WT such that the one or more alignment marks 104 are located above the respective one or more windows 222 in the substrate table.
Once the substrate carrier 106 has been positioned upon the substrate table WT, alignment of the substrate for exposure may be achieved by the alignment system aligning to the virtual alignment mark(s) 224.
The imaging detector 42 may include pattern recognition software, to allow the alignment mark(s) 104 to be identified in an automated manner. The capture range of the imaging detector 42 may be, for example, around 900 microns in the x and y directions. Typically the imaging detector 42 will include an objective lens which provides magnification. The capture range of the imaging detector 42 may be increased by providing the imaging detector with an objective lens having a lower magnification. However, the magnification of the objective lens should not be reduced so much that the imaging detector is no longer able to see the alignment mark(s).
A controller 46 may be arranged to automatically move the substrate 100 and/or the imaging detector 42 through a range of motion such that a location in which an alignment mark is expected passes beneath the imaging detector 42 (i.e. within the capture range of the imaging detector). The motion may be arranged, for example, such that a spiral movement is established between the substrate and the imaging detector. Alternatively, a linear movement (in the x and y directions) may be used. The capture range provided by the automated movement may be, for example, 50 mm. If this automated process fails to locate any alignment mark, or a sufficient number of alignment marks, then a manual override may be used to locate an alignment mark. The manual override comprises an interface (such as a joystick) which may be used to move the substrate 100 and/or the imaging detector 42. A display screen may display the image seen by the imaging detector 42 to assist the user in finding an alignment mark.
The imaging detector 42 may be mounted on a rail 44 which allows the imaging detector to be moved in a direction substantially parallel to the surface of the substrate 100. The imaging detector 42 may be mounted such that it is moveable in two directions substantially parallel to the surface of the substrate 100. This may allow, for example, the imaging detector 42 to be positioned over all locations of the substrate. The imaging detector 42 may also move in any other direction.
The movement of the imaging detector 42 may be restricted, for example to a particular direction of movement. This may be selected such that the movement of the imaging detector 42, together with movement of the substrate provided by the moveable arm 16 is sufficient to allow all parts of the surface of the substrate W to be seen by the imaging detector, or those parts of interest (i.e. a location where an alignment mark is expected to be found).
In an embodiment, an alignment mark may be provided on an upper surface of the substrate W, and may have a known positional relationship with respect to one or more alignment marks 104 provided on the lower surface of the substrate. When this is the case, the imaging detector 42 may be used to determine the position of the alignment mark provided on the upper surface of the substrate. The position of one or more alignment marks 104 provided on the lower surface of the substrate may then be calculated. Once the position of the one or more alignment marks 104 on the lower surface of the substrate 100 have been calculated, the substrate may be correctly be positioned on the substrate table WT such that the one or more alignment marks 104 on the lower surface of the substrate are visible through the respective one or more windows 222 in the substrate table WT.
In an embodiment, an additional alignment mark may be provided on the lower surface of the substrate 100, and may have a known positional relationship with respect to one or more alignment marks 104 which are designed to be located above the respective one or more substrate table windows 222. When this is the case the imaging detector 42 may be used to determine the position of the additional alignment mark. The position of the one or more alignment marks 104 to be used for front to backside alignment may then be calculated. Once the position of the one or more alignment marks 104 to be used for front to backside alignment have been calculated, the substrate may be correctly positioned on the substrate table WT such that the one or more alignment marks 104 are visible through the respective one or more windows 222 in the substrate table WT.
In the above description the substrate 100 has been described as being formed from GaAs or Si. However, it will be appreciated that the substrate may be formed from any other suitable material(s). The imaging detector 42 may use radiation which has a wavelength such that it is capable of penetrating through the material of the substrate, thereby allowing one or more alignment marks 104 provided on a lower surface of the substrate to be seen by the imaging detector.
It is not necessary for the imaging detector 42 to resolve a high definition image of the one or more alignment marks 104. All that is required is that the imaging detector 42 finds the location of the one or more alignment marks 104 with a sufficient accuracy that they can be correctly located over the respective one or more windows 222 of the substrate table WT.
A method according to an embodiment of the invention is illustrated schematically in
In addition to measuring the position of the one or more alignment marks 304, the edge sensor 40 is used to determine the position of the substrate. Since the substrate 300 is a conventional substrate and is not bonded to a carrier, the edge sensor allows a reasonably accurate determination of the location of the substrate to be measured. This in turn allows the position of the one or more alignment marks 304 as measured by the imaging detector 42 to be related to the position of the substrate as measured by the edge detector 40.
The substrate 300 may be circular but with a flat edge provided on a portion of its periphery. This is a conventional substrate format, and will be known to those skilled in the art. The so-called flat-edge of the substrate is usually positioned at the same location in the pre-aligner. This allows rotational error in the position of the substrate within the pre-aligner to be avoided or minimized.
Since the position of the substrate is measurable using the edge detector 40, the position of the one or more alignment marks 304 on the substrate before and after flipping of the substrate may be measured. This provides useful calibration information.
In an embodiment of the invention, in addition to providing the imaging detector 42 above the substrate W, a further imaging detector may be provided beneath the substrate. Where this is done, the calibration measurement described above is simplified, since flipping of the substrate is no longer necessary.
The terms “view” or “visible” herein include more than visibility to the naked eye as a possibility. In the context of an alignment mark, these terms are used more generally to refer to the ability of, or an arrangement to allow, a detector to detect the alignment mark using, for example, radiation.
Although the described embodiment uses an imaging detector 42, any other form of detector may be used. For example, the detector may be configured to view a diffraction pattern generated by the one or more alignment marks 104.
While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The description is not intended to limit the invention.
This application claims priority and benefit under 35 U.S.C. §119(e) to U.S. Provisional Patent Application No. 60/960,906, filed Oct. 19, 2007, the foregoing application incorporated herein in its entirety by reference.
Number | Date | Country | |
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60960906 | Oct 2007 | US |