Claims
- 1. An integrated circuit transistor structure, comprising:
- a substrate having an active region;
- a gate electrode on the active region having stacked layers of a gate insulator on said substrate, a polycrystalline silicon layer on the gate insulator, a metal silicide layer on the polycrystalline silicon layer, and a conductive cap on the metal silicide layer; and
- local interconnect contacting the active region and lying on the conductive cap, wherein said local interconnect contains a material which etches at the same rate as the metal silicide in said gate.
- 2. The structure of claim 1, wherein said local interconnect and the gate metal silicide layer are comprised of the same material.
- 3. The structure of claim 2, wherein said local interconnect and the gate metal silicide layer comprise tantalum disilicide.
- 4. The structure of claim 1, wherein the conductive cap comprises polycrystalline silicon.
- 5. A field effect transistor for an integrated circuit, comprising:
- a channel region in a semiconductor substrate;
- two source/drain regions in the substrate and disposed on opposite sides of said channel region;
- a gate insulator layer overlying said channel region;
- a first polycrystalline silicon layer overlying said gate insulator layer;
- a metal silicide layer overlying said first polycrystalline silicon layer;
- a second polycrystalline silicon layer overlying said metal silicide layer; and
- two sidewall insulator regions disposed alongside said gate insulator, first and second polycrystalline silicon, and metal silicide layers, with one of said sidewall insulator regions overlying a portion of each of said source/drain regions.
- 6. The transistor of claim 5, further comprising:
- a conductive interconnect layer connected to one of said source/drain regions and to said second polycrystalline silicon layer.
- 7. The transistor of claim 6, wherein said conductive interconnect layer comprises a metal silicide.
- 8. The transistor of claim 7, wherein said conductive interconnect layer and said metal silicide layer comprise the same metal silicide.
Parent Case Info
This is a division of application Ser. No. 07/359,860, filed May 31, 1989, now U.S. Pat. No. 4,978,637.
US Referenced Citations (9)
Divisions (1)
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Number |
Date |
Country |
Parent |
359860 |
May 1989 |
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