Number | Name | Date | Kind |
---|---|---|---|
3269 | Ely | Sep 1843 | A |
8284 | Gregg | Aug 1851 | A |
16383 | Fitch | Jan 1857 | A |
24884 | Morris | Jul 1859 | A |
5565690 | Theodore et al. | Oct 1996 | A |
5759898 | Ek et al. | Jun 1998 | A |
5953615 | Yu | Sep 1999 | A |
6039803 | Fitzgerald et al. | Mar 2000 | A |
6180476 | Yu | Jan 2001 | B1 |
6180490 | Vassiliev et al. | Jan 2001 | B1 |
6207530 | Hsu et al. | Mar 2001 | B1 |
6214653 | Chen et al. | Apr 2001 | B1 |
6251751 | Chu et al. | Jun 2001 | B1 |
6300172 | Ang et al. | Oct 2001 | B1 |
6313486 | Kencke et al. | Nov 2001 | B1 |
Entry |
---|
Yeo et al. “Nanoscale Ulta-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si Heterostructure channel” IEEE Electron Device Letters vol. 21, No. 4, Apr. 2000. |