The present invention relates to a luminescent light source using a light-emitting element, specifically, a light-emitting diode bare chip, a method for manufacturing the same, and a light-emitting apparatus using the luminescent light source.
In recent years, a luminescent light source using a light-emitting diode bare chip (hereinafter, referred to as a LED bare chip) has been attracting attention as a next-generation illumination light source. The reason behind this is that a luminescent light source using a LED bare chip has longer life and uses no Hg so as to be environmentally friendly compared with conventional incandescent lamps and fluorescent lamps. Another reason is that a LED bare chip itself is small and thus allows a luminescent light source to be reduced in size and weight.
Examples of a luminescent light source using a LED bare chip include a luminescent light source that includes a LED bare chip, a substrate connected to the LED bare chip, and a phosphor layer that contains a phosphor and covers the LED bare chip. Particular attention has been given to, among luminescent light sources of such a type, a luminescent light source that produces white output light by using a LED bare chip emitting blue light and a phosphor that is contained in a phosphor layer and emits yellow light.
Meanwhile, an electrical connection between a LED bare chip and a substrate is established by, for example, a method in which the LED bare chip bonded to the substrate via a non-conductive paste is connected to the substrate using a plurality of gold wires, a method in which the LED bare chip bonded to the substrate via a conductive paste or Au—Sn eutectic bonding is connected to the substrate using a gold wire, or a flip-chip connection method in which the LED bare chip is connected to the substrate via a bump. When the above-described luminescent light source using a LED bare chip is used as an illumination light source, the flip-chip connection method using no wire is more suitable since in the methods of establishing an electrical connection using a wire, it is likely that the shadow of the wire is projected on a surface to be irradiated.
In the flip-chip connection method, generally, a LED bare chip is connected electrically to a conductor pattern on a substrate via a bump formed of gold or solder. In this case, the bump is formed directly on the LED bare chip or the conductor pattern formed on the substrate. Further, there also is a method in which after a LED bare chip is connected to a substrate, an underfill further is filled into a gap between the LED bare chip and the substrate (see, for example, JP 2003-101075 A). An underfill generally is a liquid material formed of, for example, a resin such as an epoxy resin or the like. Through the use of this, the bonding between a LED bare chip and a substrate can be reinforced. Further, through the use of an underfill further containing an inorganic filler, stress exerted on a bump can be reduced, and thus, for example, a phenomenon can be prevented in which a LED bare chip is peeled off from a wring pattern on a substrate due to heat applied in a later process and in actual use.
However, an underfill may run up to a side face of a LED bare chip or spread to an area other than an area between the LED bare chip and a substrate. Such a case causes a phosphor layer to have an unstable shape, that is, the phosphor layer covering the LED bare chip to have a non-uniform thickness, leading to uneven chromaticity of output light, which is problematic.
Moreover, in the case where an underfill and a phosphor layer are formed of different materials from each other, particularly, when the phosphor layer contains a silicone resin having less adhesiveness, peeling is likely to occur at an interface between the underfill and the phosphor layer, which also is problematic.
Furthermore, in order to form a phosphor layer three-dimensionally so as to cover a LED bare chip and maintain the shape of the phosphor layer, a material constituting the phosphor layer should have a high viscosity. Because of this, without the use of an underfill, in a conventional method, a material constituting a phosphor layer hardly flows into between a LED bare chip and a substrate, resulting in the formation of a gap therein.
When the phosphor layer is cured by heating with the above-mentioned gap remaining, air contained in the gap expands under heat and compresses the phosphor layer covering the LED bare chip, so that the phosphor layer may be deformed and a through-hole may be formed as a result of air leakage. This case causes the phosphor layer covering the LED bare chip to have a non-uniform thickness, leading to, for example, uneven chromaticity of output light and a decrease in luminous efficiency, which are problematic.
Furthermore, when a gap exists between a LED bare chip and a substrate, water is accumulated to cause ion migration across electrodes of the substrate and across p-n junctions of the LED bare chip as well as deterioration of the LED bare chip.
With the foregoing in mind, it is an object of the present invention to provide a luminescent light source in which a gap between a light-emitting element such as a LED bare chip or the like and a substrate is eliminated even without the use of an underfill, a method for manufacturing the same, and a light-emitting apparatus using the luminescent light source.
A luminescent light source according to the present invention includes: a light-emitting element; a substrate including a conductor pattern; and a phosphor layer material containing a phosphor and a light-transmitting base material. In the luminescent light source, the light-emitting element is connected to the conductor pattern, and the phosphor layer material covers the light-emitting element. Further, at least the light-transmitting base material in the phosphor layer material is disposed between the light-emitting element and the substrate.
Furthermore, a light-emitting apparatus according to the present invention includes a plurality of the above-described luminescent light sources.
Furthermore, a method for manufacturing a luminescent light source according to the present invention includes: a first process step of connecting a light-emitting element onto a substrate including a conductor pattern via a gap; a second process step of covering the light-emitting element connected onto the substrate with a phosphor layer material containing a phosphor and a light-transmitting base material in a low pressure atmosphere of a pressure lower than atmospheric pressure; and a third process step of allowing at least the light-transmitting base material contained in the phosphor layer material covering the light-emitting element to be filled between the light-emitting element and the substrate in a higher pressure atmosphere than the low pressure atmosphere.
According to the present invention, even without the use of an underfill, a gap between a light-emitting element and a substrate can be eliminated. Thus, a luminescent light source that prevents the deformation of a phosphor layer and the formation of a through-hole resulting from air leakage so as to achieve a uniform thickness of the phosphor layer, and a light-emitting apparatus using the same can be provided.
Furthermore, according to the present invention, since an underfill is not used, it is possible to reduce cycle time by eliminating the process of filling an underfill from the conventional processes and prevent peeling that occurs at an interface between an underfill and a phosphor layer. Thus, a practical method for manufacturing the luminescent light source according to the present invention can be provided.
Hereinafter, the present invention will be described by way of embodiments with reference to the appended drawings. In the following embodiments, like parts are identified by the same reference characters, and duplicate descriptions thereof may be omitted.
FIGS. 1 to 4 are cross-sectional views showing an example of the method for manufacturing a luminescent light source according to the present invention.
First, as shown in
The light-emitting element 1 is of a so-called single-sided electrode type, namely, has both a p-electrode and an n-electrode on its lower surface, and the p-electrode and the n-electrode are connected electrically to the conductor pattern 4b via the bump 5. The light-emitting element 1 is not limited particularly by a material, a structure or the like as long as it is a photoelectric transducer for converting electric energy into light, and as the light-emitting element 1, for example, a LED, a laser diode (LD), a surface-emitting LD, an inorganic electroluminescence (EL) element, and an organic EL element can be used.
The substrate 2 is a so-called metal base substrate and includes a resin film 8, two insulating layers 7a and 7b (referred to collectively as insulating layers 7), and a metal base 6 attached on a back surface of the insulating layer 7a. Conductor patterns 4a and 4b for feeding electric power to the light-emitting element 1 (referred to collectively as conductor patterns 4) are formed on surfaces of the insulating layers 7a and 7b, respectively. The conductor patterns 4a and 4b sandwich the insulating layer 7b therebetween and are connected electrically by means of, for example, a via hole (not shown). The metal base 6 has a function of reinforcing the insulating layers 7 and radiating heat generated when the light-emitting element 1 emits light.
The resin film 8 protects the conductor pattern 4b and secures insulation between the conductor pattern 4b and a reflective plate 9 (that will be described later). A material for the resin film 8 is not limited particularly as long as it maintains electrical insulation, and as the material, for example, a resist formed of a white epoxy resin in general use can be used. Herein, the resin film 8 is set to have a white color in order to allow light emitted from the light-emitting element 1 to be outputted efficiently to the exterior. Further, in the resin film 8, holes (window openings) are formed in portions corresponding respectively to the positions of the light-emitting elements 1. The holes are formed by, for example, removing the above-mentioned portions of the resin film after the resin film is formed first on the entire surface of the insulating layer 7b.
A material for the insulating layers 7 is not limited particularly as long as it maintains electrical insulation, and as the material, for example, a ceramic material, a glass epoxy material, and a thermosetting resin can be used. Further, the material further may contain an inorganic filler. As the thermosetting resin, for example, an epoxy resin can be used, and as the inorganic filler, for example, a silica filler and an alumina filler that have high thermal conductivity can be used.
The mask 15 is a mold for molding a phosphor layer material and has holes in portions corresponding respectively to the positions of the light-emitting elements 1 so that the light-emitting elements 1 are fitted respectively in the holes when the mask 15 is placed over the substrate 2.
In the above-described first process step, there is no particular limitation on a method of connecting the light-emitting element 1 to the substrate 2. That is, the method could be any general connection method of electrically connecting electrodes included in the light-emitting element 1 to the conductor patterns 4 included in the substrate 2, in which a gap is formed between the light-emitting element 1 and the substrate 2. The connection method using the bump 5 is particularly preferable in that there is no obstacle to light output in an irradiation direction of a luminescent light source.
In this embodiment, in order to enable higher-density mounting of the light-emitting element 1, the substrate 2 has a multilayer structure using the two insulating layers 7a and 7b. However, if there is no need to have the multilayer structure, a single layer structure using one insulating layer or a multilayer structure of three or more layers may be employed. Further, the substrate 2 is not limited by the above-mentioned materials and the like.
Next, as shown in
The above-mentioned low pressure atmosphere is, for example, an atmosphere of a pressure of 20 Pa to 100 Pa.
The phosphor layer material 3 is not limited particularly as long as it contains at least a phosphor and a light-transmitting base material and allows a three-dimensional shape to be maintained so as to cover the light-emitting element 1.
The above-mentioned phosphor is not limited particularly as long as it at least is excited by light emitted by the light-emitting element 1 to emit light. As the phosphor, for example, a garnet phosphor activated with Ce3+ (Y3Al5O12:Ce3+ or the like), an alkaline-earth metal orthosilicate phosphor activated with Eu2+ ((Sr, Ba)2SiO4:Eu2+ or the like), a Ca-α SIALON phosphor activated with Eu2+, and a thiogallate phosphor activated with Eu2+ (CaGa2S4:Eu2+ or the like) can be used. These phosphors may be used alone or in a combination of a plurality of types.
There is no particular limitation on a wavelength of excited light emitted by the light-emitting element 1, and for example, blue light having an emission peak in the wavelength region of 420 nm to 470 nm and near-ultraviolet light having an emission peak in the wavelength region of 350 nm to 410 nm can be used. Specifically, it also is possible to obtain a luminescent light source that emits white light by allowing a red phosphor, a green phosphor and a blue phosphor to be excited using a light-emitting element that emits near-ultraviolet light having an emission peak in the wavelength region of 350 nm to 410 nm.
The above-mentioned light-transmitting base material is not limited particularly as long as it is a light-transmitting material that has a property of being cured by the application of heat, ultraviolet light or the like, or an inorganic transparent material such as glass or the like in which at least a phosphor can be dispersed. As the light-transmitting base material, for example, a resin and low-melting glass can be used. It is more preferable that the light-transmitting base material has a spectral transmittance of 70% or higher at an emission peak wavelength of the light-emitting element 1. Further, it is more preferable to use as the resin, at least one selected from an epoxy resin, a silicone resin and a fluorocarbon resin since these resins have an excellent light-transmitting property. Among these, a silicone resin is used even more preferably since it has such large elasticity so as to be capable of protecting a light-emitting element from an external force and exhibits excellent heat resistance and light resistance.
In the above-described second process step, a method of covering the light-emitting element 1 is not limited particularly to the so-called screen printing method using a mask and a squeegee.
In the manufacturing method according to this embodiment, the phosphor layer material 3 further may contain an inorganic filler. The inorganic filler is not limited particularly as long as it is used generally as a filler and has a high light transmittance, and can be formed of, for example, silicon dioxide, alumina, aluminum nitride, silicon nitride, titanium oxide, or magnesium oxide. Among these, silicon dioxide is preferable as a viscosity adjusting material for a phosphor layer before being cured since it has a high spectral transmittance and an effect of increasing viscosity. Silicon dioxide used as a viscosity adjusting material has a particle diameter of primary particles as minute as about 15 nm and a mean particle diameter of not more than 100 nm. Moreover, in the case where silicon dioxide having a mean particle diameter of 100 nm to 10 μm further is used in addition to the primary particles, by a thermal conduction effect of the silicon dioxide, heat generated by a LED bare chip can be released efficiently to the exterior, and at the same time, a thermal expansion/contraction coefficient of a phosphor layer is decreased, which are effective in suppressing stress to be exerted on the LED bare chip. Particularly, in the case of using an inorganic filler having a mean particle diameter of 100 nm to 10 pm and more preferably of 100 nm to 5 μm, the filler is filled into a clearance of about 10 μm between a LED bare chip and a substrate, and thus the above-described effect can be obtained efficiently.
Furthermore, in the case where silicon nitride, sapphire, zirconia or the like that has a high refractive index is used for the inorganic filler, a refractive index difference from a LED bare chip is decreased, thereby allowing light to be outputted more easily from the LED bare chip to the exterior.
Next, as shown in
The above-mentioned high pressure atmosphere is, for example, an atmosphere of a pressure of 10 kPa to 90 kPa. That is, by raising the pressure used in the second process step, due to a vacuum differential pressure, the phosphor layer material 3 is allowed to be filled into the gap between the light-emitting element 1 and the substrate 2.
Herein, a filled state is not limited to a state in which the gap is filled completely. It is sufficient that the gap is filled, for example, to such an extent that the deformation of the phosphor layer material 3 and the formation of a through-hole are not caused when the luminescent light source is used. Specifically, for example, not less than 70% by volume of the gap between the light-emitting element 1 and the substrate 2 should be filled with the phosphor layer material 3.
Furthermore, it is sufficient that the above-described portion of the phosphor layer material 3 filled between the light-emitting element 1 and the substrate 2 contains at least the light-transmitting base material, and in the case where a gap between the light-emitting element 1 and the substrate 2 has a height smaller than the particle diameter of the above-described phosphor, the phosphor may not be filled.
In the manufacturing method according to this embodiment, when the phosphor layer material 3 contains an inorganic filler in the above-described second process step, the portion of the phosphor layer material 3 filled into the gap between the light-emitting element 1 and the substrate 2 also may contain the inorganic filler. In the case where the inorganic filler is contained between the light-emitting element 1 and the substrate 2, stress exerted when the light-emitting element 1 and the substrate 2 are bonded together is reduced, and heat generated in the light-emitting element 1 is radiated efficiently to the substrate, which is more preferable.
Next, as shown in
The process of adding the extra portion of the phosphor layer material 3 is performed so that the surface of the phosphor layer material 3 is flattened and the thickness of the phosphor layer material 3 is made more uniform. However, this process can be omitted when there is no need for it because, for example, the concave portion is extremely small.
Finally, as shown in
The phosphor layer material 3 is cured as described above by a method that is determined by a property of the phosphor layer material 3, particularly, a property of the light-transmitting base material. Examples of the method include heating and light irradiation. For example, in the case of using a silicone resin as the light-transmitting base material, the method could be heating performed at 135° C. for 60 minutes.
In the reflective plate 9, reflection holes are provided so as to correspond respectively to the mounting positions of the light-emitting elements 1, and the reflective plate 9 can be formed of, for example, a metal plate of aluminum or the like, a white resin, ceramic, of a resin whose surface is plated. In the case of using a metal plate of aluminum for the reflective plate 9, for example, when the metal plate is subjected to anodic oxidation and an oxide film is formed thereon, the reflectance can be improved, and electrical insulation also can be secured, which is more preferable.
The lens plate 10 includes a convex lens that protrudes in a hemispherical shape so as to correspond to the mounting position of each of the light-emitting elements 1, and is formed by, for example, a transfer molding method, a casting method, or an injection molding method. For the lens plate 10, a light-transmitting material such as, for example, an epoxy resin, glass, a silicone resin, a polycarbonate resin, a polystyrene resin, non-crystalline polyester, non-crystalline polyolefin, an acrylic resin, a cycloolefin resin, or a fluorocarbon resin can be used.
Although only one luminescent light source is shown in the manufacturing method according to this embodiment, it also is possible to manufacture a plurality of the same type of luminescent light sources at the same time.
In the luminescent light source according to the present invention, the phosphor layer material 3 can be filled into a gap between the light-emitting element 1 and the substrate 2. Thus, for example, the deformation of the phosphor layer material 3 and the formation of a through-hole resulting from air leakage can be prevented, thereby allowing the phosphor layer material 3 to have a uniform thickness.
FIGS. 6 to 9 are cross-sectional views showing processes in another example of the method for manufacturing a luminescent light source according to the present invention. In FIGS. 6 to 9, like parts are identified by the same reference characters as in FIGS. 1 to 4, and duplicate descriptions thereof are omitted. Further, each of
First, as shown in
Next, as shown in
The above-mentioned low pressure atmosphere is, for example, an atmosphere of a pressure of 20 Pa to 100 Pa.
Next, as shown in
The above-mentioned high pressure atmosphere is, for example, an atmosphere of a pressure of 10 kPa to 90 kPa. That is, by raising the pressure used in the second process step, due to a vacuum differential pressure, the phosphor layer material 3 is allowed to be filled into the gap between the light-emitting element 1 and the substrate 2.
Next, as shown in
Finally, the phosphor layer material 3 is cured, and subsequently, a lens plate is formed so as to cover the phosphor layer material 3 and the reflective plate 9. Thus, as shown in
A luminescent light source according to this embodiment has the same configuration as that of the luminescent light source shown in
As shown in
The light-emitting element 1 is disposed on the conductor pattern 13 via a bump 5 and connected electrically to the conductor pattern 13. The phosphor layer material 3 is disposed so as to cover the light-emitting element 1 and a portion of the conductor pattern 13. The phosphor layer material 3 further is filled between the light-emitting element 1 and the sub-substrate 12. The sub-substrate 12 is disposed on a conductor pattern 4b on the substrate 2. Further, the conductor pattern 13 is connected to the conductor pattern 4b by means of the wire 14. Moreover, the reflective plate 9 and the lens plate 10 are disposed on the substrate 2.
The sub-substrate 12 is die-bonded onto the conductor pattern 4b on the substrate 2 by a general method such as, for example, a method using a conductive paste. Further, a portion of the conductor pattern 13 on the sub-substrate 12 is connected to the conductor pattern 4b using the wire 14. This allows the light-emitting element 1 to be connected electrically to the substrate 2.
There is no particular limitation on the wire 14, and any type of wire that is used generally for wire bonding such as, for example, a gold wire can be used as the wire 14.
A structure of the sub-substrate 12, the light-emitting element 1 and the phosphor layer material 3 is not limited to the above-described structure. Further, although the light-emitting element 1 of the single-sided electrode type with electrodes provided on its back surface is used herein, the light-emitting element 1 also can be of a two-sided electrode type in which electrodes are provided respectively on front and back surfaces.
The luminescent light source according to this embodiment has this configuration, and thus in addition to the above-described effects, the following effects are attained. First, since the light-emitting element 1 is connected to the sub-substrate 12 beforehand, the light-emitting element 1 mounted on the sub-substrate 12 can be inspected to see that, for example, it operates properly, before being connected to the substrate 2. By performing such an inspection beforehand, for example, an effect can be obtained that the manufacturing yield of the luminescent light source can be improved. Further, for example, an effect also is provided that a luminescent light source that outputs light of a more desirable color can be used selectively in place of a luminescent light source that hardly outputs light of a uniform color.
A luminescent light source according to this embodiment has the same configuration and effects as those of the luminescent light source shown in
As shown in
The light-emitting element 1 is connected to the substrate 2. The phosphor layer material 3 is disposed so as to cover the light-emitting element 1 and a portion of a conductor pattern 4b. The phosphor layer material 3 further is filled between the light-emitting element 1 and the substrate 2. Moreover, the lens plate 10 is disposed on the substrate 2. The lens plate 10 covers the light-emitting element 1 and the phosphor layer material 3 to form a convex lens having a hemispherical shape.
The light-emitting apparatus according to this embodiment has a configuration using a plurality of the luminescent light sources as shown in
As shown in
The connection terminals 11 are formed on the surface of the substrate 2 and used to feed electric power to the light-emitting elements 1 by means of the above-described conductor patterns 4 (
The reflective plate 9 reflects light emitted from the light-emitting elements 1 in a predetermined direction, and in the reflective plate 9, 64 reflection holes are provided so as to correspond respectively to the disposed positions of the pieces of the phosphor layer material 3.
The lens plate 10 converges reflected light to a desired direction, and in the lens plate 10, 64 convex lenses respectively protruding in a hemispherical shape are provided so as to correspond respectively to the disposed positions of the pieces of the phosphor layer material 3.
Each of the pieces of the phosphor layer material 3 is formed in a columnar shape so that in each piece, a portion for radiating light emitted from the light-emitting element 1 to the exterior can be restricted, and so that when seen as a single element, the light-emitting element 1 can be regarded as functioning more like a point light source.
Hereinafter, the present invention will be described more specifically by way of examples.
In this example, as a light-emitting apparatus, a card type light emitting apparatus that has the same configuration as that of the light-emitting apparatus shown in
Initially, a substrate 2 was produced in the following manner. First, an epoxy resin containing an inorganic filler and copper foil (thickness: 10 μm) were laminated on a metal base 6 formed of an aluminum plate (size: 3 cm by 3 cm, thickness: 1 mm) and subjected to thermocompression to form an insulating layer 7a (thickness: 100 μm). After that, the copper foil was etched so that a desired conductor pattern 4a was formed. On a body thus obtained, an epoxy resin containing an inorganic filler and copper foil (thickness: 10 μm) further were laminated and subjected to thermocompression to form an insulating layer 7b (thickness: 100 μm). Next, the copper foil was etched so that a desired conductor pattern 4b was formed, and the conductor pattern 4a was connected electrically to the conductor pattern 4b by means of a via hole. Finally, as shown in
Next, the LED bare chips, namely, the light-emitting elements 1 were connected to the substrate 2 and covered with a phosphor layer material 3 in the following manner. First, the LED bare chips (approximately 300 μm square, height: approximately 100 μm, emission peak wavelength: 460 nm) were placed on the conductor pattern 4b on the substrate 2 via a bump 5. The bump 5 was melted by the application of ultrasonic waves, so that the LED bare chips were connected to the conductor pattern 4b. Subsequently, the LED bare chips connected to the substrate 2 were covered with the phosphor layer material 3 by the screen printing method.
The LED bare chips were covered with the phosphor layer material 3 in the following manner. First, as shown in
Next, in a low pressure atmosphere of a pressure of 30 Pa, as shown in
Subsequently, as shown in
Moreover, as shown in
Subsequently, the light-emitting apparatus according to this example was completed in the following manner. First, after a reflective plate 9 formed of aluminum subjected to anodic oxidation was mounted on the resin film 8, a lens plate 10 formed of an epoxy resin was formed so as to cover the phosphor layer material 3 and the reflective plate 9. Further, at the same time that the substrate was produced, connection terminals 11 for feeding electric power to the light-emitting elements 1 via the conductor patterns 4 were formed on the surface of the substrate 2.
In the reflective plate 9, reflection holes having the shape of a reverse conical tube are provided so as to correspond respectively to the LED bare chips. Further, the reflective plate 9 was mounted using an adhesive. Specifically, the adhesive was applied to a back surface of the reflective plate 9, and the reflective plate 9 was mounted so that the phosphor layer material 3 entered the reflection holes of the reflective plate 9.
The lens plate 10 was formed in the following manner. That is, a mold for molding a lens plate (not shown) was disposed on the substrate 2 on which the above-described reflective plate 9 was mounted, and the epoxy resin was injected into the mold.
The conductor pattern 4b was formed so that every 32 LED bare chips were connected in series and connected to either of a pair of connection terminals 11a and 11b and a pair of connection terminals 11c and 11d.
The card type light-emitting apparatus including 64 LED bare chips according to this example was obtained by the above-described processes.
A light-emitting apparatus according to this comparative example was manufactured under the same conditions as those for the light-emitting apparatus according to Example 1 except that LED bare chips were covered with a phosphor layer material 3 under atmospheric pressure at all times.
In the following description, a comparison is made between the light-emitting apparatus according to the Example and the light-emitting apparatus according to Comparative Example.
With respect to each of these light-emitting apparatus, side faces of 100 phosphor layers (one LED bare chip was assumed to have one phosphor layer) were examined using a metallurgical microscope manufactured by Olympus Corporation. As a result, in the light-emitting apparatus according to the Comparative Example, among the phosphor layers, 65 had a though-hole resulting from air leakage and 35 exhibited a trace of the expansion of an air layer, while in the light-emitting apparatus according to the Example, neither a through-hole nor a trace of expansion was observed. Conceivably, such a through-hole and trace of expansion result from the expansion of air existing between each LED bare chip and a substrate that is caused when a phosphor layer material is cured by heating, constituting one factor leading to uneven chromaticity of output light. In summary, in the light-emitting apparatus according to the Example of the present invention, neither a through-hole nor a trace of expansion was observed, which is a significant difference from the Comparative Example.
Furthermore, a minute forward current was passed through each of these light-emitting apparatuses via connection terminals to examine a decrease in forward voltage. Specifically, with respect to each of the light-emitting apparatuses according to the Example and Comparative Example, in which every 32 LED bare chips were connected in series, after an electric current of 40 mA was passed under constant temperature and humidity of 60° C. and a relative humidity of 95% for 1000 hours, an electric current of 10 μA was passed and a voltage was measured. As a result, in the light-emitting apparatus according to the Comparative Example, a voltage was decreased from 80 V to 75 V, while in the light-emitting apparatus according to the Example, there occurred no decrease in voltage. Conceivably, such a decrease in voltage with time is attributable to water or the like accumulated in a gap inside a luminescent light source, particularly, a gap between each of the LED bare chips and the substrate. The accumulation of water or the like constitutes one factor leading to ion migration. In summary, in the light-emitting apparatus according to the Example of the present invention, a decrease in voltage with time is not caused, which is a significant difference from the Comparative Example.
The invention may be embodied in other forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed in this application are to be considered in all respects as illustrative and not limiting. The scope of the invention is indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are intended to be embraced therein.
As described in the foregoing discussion, the present invention can provide a luminescent light source that has no gap between a light-emitting element and a substrate, thereby obtaining output light with even chromaticity and achieving an improvement in luminous efficiency, a method for manufacturing the same, and a light-emitting apparatus using the luminescent light source.
Number | Date | Country | Kind |
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2004-299312 | Oct 2004 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP05/18996 | 10/11/2005 | WO | 3/15/2007 |