Patent Grant
10230006
Not Applicable.
This invention relates generally to magnetic field sensors and, more particularly, to integrated circuit magnetic field sensors having an integral ferromagnetic material.
Magnetic field sensors including a magnetic field sensing element, or transducer, such as a Hall Effect element or a magnetoresistive element, are used in a variety of applications to detect aspects of movement of a ferromagnetic article, or target, such as proximity, speed, and direction. Illustrative applications include, but are not limited to, a magnetic switch or “proximity detector” that senses the proximity of a ferromagnetic article, a proximity detector that senses passing ferromagnetic articles (for example, magnetic domains of a ring magnet or gear teeth), a magnetic field sensor that senses a magnetic field density of a magnetic field, and a current sensor that senses a magnetic field generated by a current flowing in a current conductor. Magnetic field sensors are widely used in automobile control systems, for example, to detect ignition timing from a position of an engine crankshaft and/or camshaft, and to detect a position and/or rotation of an automobile wheel for anti-lock braking systems.
In applications in which the ferromagnetic target is magnetic, a magnetically permeable concentrator or magnetic flux guide is sometimes used to focus the magnetic field generated by the target on the magnetic field transducer, thus increasing the sensitivity of the sensor, allowing the use of a smaller magnetic target, and/or allowing the magnetic target to be sensed from a larger distance (i.e., a larger airgap). In other applications, in which the ferromagnetic target is not magnetic, a permanent magnet, sometimes referred to as a back bias magnet, may be used to generate the magnetic field that is then altered by movement of the target.
In some applications it is desirable to provide a back bias magnet with two magnetic poles on the magnet surface adjacent to the magnetic field transducer. For example, as described in a U.S. Pat. No. 5,781,005 entitled “Hall-Effect Ferromagnetic-Article-Proximity Sensor,” which is assigned to the Assignee of the subject application, the near presence of opposite poles serves to short out the lines of flux when no ferromagnetic article is present, thereby presenting a significant and easily recognizable difference between an article present (e.g., gear tooth present) condition and an article absent (e.g., gear valley present) condition and maintaining a low magnetic flux density baseline regardless of airgap. Because of the easily recognizable difference in the magnetic field signal, these types of arrangements are advantageous for use in sensors in which it is necessary to detect the presence/absence of a magnetic article, such sensors sometimes being referred to as True Power On Sensors, or TPOS, sensors.
Generally, back bias magnets and concentrators are held in place relative to the magnetic field sensing element by mechanical means, such as an adhesive as shown in a U.S. Pat. No. 6,265,865 entitled “Single Unitary Plastic Package for a Magnetic Field Sensing Device,” which is assigned to the Assignee of the subject application. Such mechanical positioning can lead to performance variations, such as sensitivity variations, from device to device due to position tolerances. Thus, it is advantageous to manufacture the sensor so that the sensor and the back bias magnet or concentrator are integrally formed, thereby eliminating position tolerances. A magnetic field sensor of this type is described in a U.S. Patent Application Publication No. 2010/0141249 entitled “Magnetic Field Sensors and Methods for Fabricating the Magnetic Field Sensors,” which is also assigned to the Assignee of the subject application and in which a concentrator or magnet may be formed by a liquid encapsulant or a combination of a liquid encapsulant and permanent magnet in a cavity on the side of the sensor opposite the target.
While the use of a back bias magnet is advantageous in certain applications, the hard magnetic material used to form the magnet is relatively expensive and represents a significant part of the overall cost of the sensor.
There are many package types and fabrication techniques in use for providing integrated circuit magnetic field sensors. For example, the semiconductor die in which the magnetic field sensing element is formed may be attached to a lead frame by various techniques, such as with an adhesive tape or epoxy, and may be electrically coupled to the lead frame by various techniques, such as with solder bumps or wire bonding. Also, the lead frame may take various forms and the semiconductor die may be attached to the lead frame in an orientation with the active semiconductor surface (i.e., the surface in which the magnetic field sensing element is formed) being adjacent to the lead frame in a so called “flip-chip” arrangement, with the active semiconductor surface opposite the lead frame surface in a so called “die up” arrangement, or with the semiconductor die positioned below the lead frame in a so called “Lead on Chip” arrangement.
Molding is often used in fabricating integrated circuit magnetic field sensors to provide the protective and electrically insulative “overmold” to the semiconductor die. Transfer molding has also been used to form two different molded portions for various reasons. For example, in a U.S. Pat. No. 7,816,772 entitled “Methods and Apparatus for Multi-Stage Molding of Integrated Circuit Package” which is assigned to the Assignee of the subject application, a first molded structure is formed over the semiconductor die to protect wire bonds and the device is overmolded with a second molded structure formed over the first molded structure. In a U.S. Patent Application Publication No. 2009/0140725 entitled “Integrated Circuit Including Sensor having Injection Molded Magnetic Material,” an injection molded magnetic material encloses at least a portion of a magnetic field sensor.
Molding, while providing a cost effective fabrication technique, can present challenges, such as removal of the device from the mold in a manner that does not subject the device to deleterious stresses.
A magnetic field sensor includes a lead frame having a first surface and a second opposing surface, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second opposing surface attached to the first surface of the lead frame, a non-conductive mold material enclosing the die and at least a portion of the lead frame, and a ferromagnetic mold material secured to a portion of the non-conductive mold material, wherein the ferromagnetic mold material comprises a non-contiguous central region extending from a first end proximate to the lead frame to a second end distal from the lead frame, wherein the central region has an inner surface with a taper established by at least two differently sloped portions.
The ferromagnetic mold material is secured to a portion of the non-conductive mold material and a second portion of the lead frame that extends beyond the non-conductive mold material and may comprise a hard ferromagnetic material. A third mold material may be disposed in and secured to the central region of the ferromagnetic mold material. In some embodiments, a separately formed element, as may be comprised of a hard ferromagnetic material, a soft ferromagnetic material, or a non-ferromagnetic material, is disposed in and secured to the central region of the ferromagnetic mold material.
Also described is a magnetic field sensor including a lead frame having a first surface and a second opposing surface, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second opposing surface attached to the first surface of the lead frame, a non-conductive mold material enclosing the die and at least a portion of the lead frame, a ferromagnetic mold material secured to a portion of the non-conductive mold material, wherein the ferromagnetic mold material comprises a non-contiguous central region extending from a first end proximate to the lead frame to a second end distal from the lead frame, and a separately formed element disposed in and secured to the central region of the ferromagnetic mold material. The separately formed element may be comprised of a hard ferromagnetic material, a soft ferromagnetic material, or a non-ferromagnetic material. In some embodiments, the lead frame may include at least one slot.
According to a further aspect, a magnetic field sensor includes a lead frame having a first surface, a second opposing surface, and at least one slot, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second opposing surface attached to the first surface of the lead frame, a non-conductive mold material enclosing the die and at least a portion of the lead frame, and a ferromagnetic mold material secured to a portion of the non-conductive mold material. In some embodiments, the ferromagnetic mold material comprises a hard ferromagnetic material to form a bias magnet.
Also described is a magnetic field sensor including a lead frame having a first surface, a second opposing surface, and a plurality of leads, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second opposing surface attached to the first surface of the lead frame, a non-conductive mold material enclosing the die and at least a portion of the lead frame, and a molded ferromagnetic suppression device spaced from the non-conductive mold material and enclosing a portion of at least one of the plurality of leads. A ferromagnetic mold material may be secured to a portion of the non-conductive mold material. The molded ferromagnetic suppression device may comprise comprises a hard ferromagnetic material or a soft ferromagnetic material.
In some embodiments, the molded ferromagnetic suppression device includes a first molded element enclosing the portion of a lead and a second molded element enclosing at least a portion of the first molded element. The first molded element may comprise a non-conductive mold material and the second molded element may comprise a ferromagnetic material. According to a further aspect, the sensor may include at least one of a passive component or a ferromagnetic bead coupled to a lead and enclosed by the molded ferromagnetic suppression device.
Also described is a magnetic field sensor including a lead frame having a first surface, a second opposing surface, and a plurality of leads, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second opposing surface, a non-conductive mold material enclosing the die and at least a portion of the lead frame, a ferromagnetic mold material secured to a portion of the non-conductive mold material, and at least one capacitor coupled to at least two of the plurality of leads and spaced from the non-conductive mold material. Additional features may include a molded ferromagnetic suppression device enclosing the capacitor, at least one slot in the lead frame, and/or at least one ferromagnetic bead coupled to a lead.
According to a further aspect, a magnetic field sensor includes a lead frame having a first surface, a second opposing surface, and a plurality of leads, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second opposing surface, a non-conductive mold material enclosing the die and at least a portion of the lead frame, a ferromagnetic mold material secured to a portion of the non-conductive mold material, and at least one ferromagnetic bead coupled to at least one of the plurality of leads. In some embodiments, the ferromagnetic bead is enclosed by the non-conductive mold material. A molded ferromagnetic suppression device may be provided spaced from the non-conductive mold material and may enclose the ferromagnetic bead.
Also described is a magnetic field sensor including a lead frame having a first surface and a second opposing surface, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second opposing surface attached to the first surface of the lead frame, a non-conductive mold material enclosing the die and at least a portion of the lead frame, and a conductive coil secured to the non-conductive mold material. In some embodiments, the non-conductive mold material encloses the coil. Alternatively, a second mold material may be secured to a portion of the non-conductive mold material and enclose the coil. The non-conductive mold material may include a protrusion and the coil may be positioned concentrically with respect to the protrusion.
Also described is a magnetic field sensor including a lead frame having a first surface, a second opposing surface, and at least one lead comprising a first lead portion having an end and a second lead portion having an end spaced from and proximate to the end of the first lead portion, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second opposing surface attached to the first surface of the lead frame, a non-conductive mold material enclosing the die and at least a portion of the lead frame, and a passive component coupled between the end of the first lead portion and the end of the second lead portion. In some embodiments, the passive component is a resistor.
The foregoing features of the invention, as well as the invention itself may be more fully understood from the following detailed description of the drawings, in which:
Referring to the cross-sectional view of
The magnetic field sensing element 22 in this and other embodiments can be, but is not limited to, a Hall effect element, a magnetoresistance element, or a magnetotransistor. As is known, there are different types of Hall effect elements, for example, a planar Hall element, a vertical Hall element, and a circular vertical Hall element. As is also known, there are different types of magnetoresistance elements, for example, a semiconductor magnetoresistance element such as Indium Antimonide (InSb), a giant magnetoresistance (GMR) element, an anisotropic magnetoresistance element (AMR), a tunneling magnetoresistance (TMR) element, and a magnetic tunnel junction (MTJ). The sensing element 22 may include a single element or, alternatively, may include two or more elements arranged in various configurations, e.g., a half bridge or full (Wheatstone) bridge. The sensing element 22 may be a device made of a type IV semiconductor material such as Silicon (Si) or Germanium (Ge), or a type III-V semiconductor material like Gallium-Arsenide (GaAs) or an Indium compound, e.g., Indium-Antimonide (InSb). In some embodiments, it may be desirable to use two or more substrates, one for the magnetic field sensing element(s) and another, such as a Si substrate, for associated processing circuitry. Illustrative multiple substrate arrangements are described in U.S. Pat. No. 7,768,083 entitled “Arrangements for an Integrated Sensor,” which is assigned to the Assignee of the subject application.
It will be appreciated by those of ordinary skill in the art that while the active surface 14a of the semiconductor die 14 is described herein as the surface “in” which the magnetic field sensing element is disposed or formed as is the case with certain types of magnetic field elements (e.g., Hall plate), the element may be disposed “over” or “on” the active semiconductor surface (e.g. magnetoresistance elements). For simplicity of explanation however, while the embodiments described herein may utilize any suitable type of magnetic field sensing elements, such elements will be described generally herein as being formed or disposed “in” the active semiconductor surface.
In use, the magnetic field sensor 10 like the other sensor embodiments described herein may be positioned in proximity to a movable magnetically permeable ferromagnetic article, or target, such as the illustrated gear 12, such that the magnetic field transducer 22 is adjacent to the article 12 and is thereby exposed to a magnetic field altered by movement of the article. The magnetic field transducer 22 generates a magnetic field signal proportional to the magnetic field.
While the magnetic field sensor 10 in
The ferromagnetic article 12 may be comprised of a hard ferromagnetic, or simply hard magnetic material (i.e., a permanent magnet such as a segmented ring magnet), a soft ferromagnetic material, or even an electromagnet and embodiments described herein may be used in conjunction with any such article arrangement.
In embodiments in which the article 12 is comprised of a soft ferromagnetic material, the ferromagnetic mold material 30 is comprised of a hard ferromagnetic material to form a bias magnet; whereas in embodiments in which the article 12 is comprised of a hard ferromagnetic material, the ferromagnetic mold material 30 may be soft ferromagnetic material to form a concentrator, or a hard magnetic material where a bias field is desired (for example, in the case of a magnetoresistance element that is biased with a hard magnetic material or permanent magnet). In embodiments in which the ferromagnetic mold material 30 comprises a hard ferromagnetic material to form a bias magnet and in which the sensor 10 is oriented relative to the target such that transducer 22 is closer to the target than the ferromagnetic mold material 30 as shown, the bias magnet may be referred to as a back bias magnet.
The magnetic field sensor 10 generally includes additional circuitry formed in the active surface 14a of the die 14 for processing the magnetic field signal provided by the transducer 22. The lead frame 18 includes leads 24a-24c for coupling the circuitry to system components (not shown), such as a power source or microcontroller. Electrical connection between the leads 24a-24c and the semiconductor die 14 can be provided with wire bonds 26a-26c, respectively as shown. While the sensor 10 is shown to include three leads 24a-24c, it will be appreciated by those of ordinary skill in the art that various numbers of leads are possible. Other techniques for electrically coupling the lead frame leads to the sensor components include solder bumps or balls (
The integrated circuit sensor 10 may be provided in the form of a two to six pin Single In-Line (SIP) package, or some other number of pins as appropriate. The die attach area 16 on the first surface 18a of a lead frame 18 is generally a dedicated area of the conductive lead frame to accept the semiconductor die 14. The die attach area 16 is sometimes referred to as a die attach paddle or a die attach pad and in some embodiments the die attach pad may be a silver plated or a NiPdAu area for example. Alternatively, as described in a co-pending U.S. patent application Ser. No. 13/350,970 entitled “Methods and Apparatus for a Magnetic Sensor having a Non-conductive Die Paddle” which was filed on Jan. 16, 2012 and assigned to the Assignee of the subject application, it may be desirable to form the die attach area with a non-conductive material, particularly in applications where Eddy currents can occur. Conventional techniques for securing the die 14 to the die attach area 16 include the use of adhesives, such as epoxy or an adhesive tape. It will be appreciated by those of ordinary skill in the art that the die attach area may or may not be a contiguous area. For example, in the embodiment of
The non-conductive mold material 20 is comprised of a non-conductive material so as to electrically isolate and mechanically protect the die 14 and the enclosed portion of the lead frame 18. Suitable materials for the non-conductive mold material 20 include thermoset and thermoplastic mold compounds and other commercially available IC mold compounds. It will be appreciated that the non-conductive mold material 20 can contain a ferromagnetic material, such as in the form of ferromagnetic particles, as long as such material is non-conductive.
The non-conductive mold material 20 is applied to the lead frame/die subassembly, such as in a first molding step (
In some embodiments as noted above, the ferromagnetic mold material 30 is comprised of a hard or permanent magnetic material to form a bias magnet. As will be apparent to those of ordinary skill in the art, various materials are suitable for providing the ferromagnetic mold material 30 depending on the operating temperature range and final package size. In some embodiments, it may be desirable for the ferromagnetic mold material to have a coercivity larger than its remanence.
Illustrative hard magnetic materials for the ferromagnetic mold material include, but are not limited to hard magnetic ferrites, SmCo alloys, NdFeB alloy materials, or Plastiform® materials of Arnold Magnetic Technologies Corp., or other plastic compounds with hard magnetic particles, for example a thermoset polymer such as polyphenylene sulfide material (PPS) or nylon material containing SmCo, NdFeB, or hard ferromagnetic ferrite magnetic particles; or a thermoset polymer such as SUMIKON® EME of Sumitomo Bakelite Co., Ltd or similar type of thermoset mold material containing hard magnetic particles. In some embodiments it may be desirable to align the hard ferromagnetic particles during molding to form a more isotropic or directional permanent magnetic material by molding in the presence of a magnetic field; whereas, in other embodiments, a sufficient magnet may result without an alignment step during molding for isotropic materials. It will be appreciated that a NdFeB or a SmCo alloy may contain other elements to improve temperature performance, magnetic coercivity, or other magnetic properties useful to a magnetic design.
In other embodiments, the ferromagnetic mold material 30 is comprised of a soft ferromagnetic material to form a concentrator. As will be apparent to those of ordinary skill in the art, various materials are suitable for providing the ferromagnetic mold material 30 in the form of a soft ferromagnetic material. In some embodiments, it may be desirable for the soft ferromagnetic mold material to have a relatively low coercivity and high permeability. Suitable soft ferromagnetic materials include, but are not limited to permalloy, NiCo alloys, NiFe alloys, steel, nickel, and soft magnetic ferrites.
The ferromagnetic mold material 30 is secured to the non-conductive mold material 20, such as in a second molding step (
In some embodiments, a portion of the non-conductive mold material 20 that contacts the ferromagnetic mold material 30 and/or the portion of the ferromagnetic mold material that contacts the non-conductive mold material has a securing mechanism in order to improve the adhesion between the two materials and to prevent or reduce lateral slippage or shear between the materials. As one example, the lead frame 18 has extensions 18c which extend beyond the non-conductive mold material and are enclosed by the ferromagnetic mold material, as shown. Such lead frame extensions additionally enhance the adhesion of the ferromagnetic mold material to the lead frame itself. In such embodiments utilizing lead frame portions as a securing mechanism such that the ferromagnetic mold material contacts such lead frame portions, it will be appreciated that the ferromagnetic mold material should be non-conductive or have a sufficiently low conductivity to prevent the leads from electrically shorting resulting in the device not operating as intended. Alternative forms of securing mechanisms are shown in other embodiments.
As is shown in
According to the alternative cross-sectional view of
It will be appreciated by those of ordinary skill in the art, that various types of processes may be used to form the mold materials including but not limited to molding, such as compression molding, injection molding, and transfer molding, and potting. Furthermore, combinations of the various techniques for forming the mold materials are possible.
A mold cavity used to define the ferromagnetic mold material 30 may include a mandrel so that the ferromagnetic mold material forms a ring-shaped structure having a central aperture 40, here extending from the second surface 20b of the non-conductive mold material to a second end 30b of the ferromagnetic mold material. The mold material 30 may form a conventional O-shaped ring structure or a D-shaped structure. Alternatively, the ferromagnetic mold material 30 may form only a partial ring-like structure, as may be described as a “C” or “U” shaped structure. More generally, the ferromagnetic mold material 30 comprises a non-contiguous central region such that the central region is not formed integrally with its outer region. Such central region may be an open area, such as in the case of aperture 40 in
The ferromagnetic mold material 30 is tapered from its first end 30a (or a location close to its first end) to its second end 30b as is apparent from the side view of
As can be seen from the views of
Referring also to
The third mold material 54 may be formed by a third molding step (
In one embodiment, the ferromagnetic mold material 30 is comprised of a hard ferromagnetic material and the third mold material 54 is comprised of a soft ferromagnetic material and provides a concentrator magnetized such that two poles are adjacent to the second surface 20b of the non-conductive mold material. As described in the above-referenced U.S. Pat. No. 5,781,005, the near presence of opposite poles with respect to the magnetic field transducer 22 serves to short out the lines of flux when no ferromagnetic target is present, thereby lowering the baseline of the flux density map regardless of airgap, and enhancing the ability to discern a target present from a target absent condition.
The sensor 50 includes an alternative securing mechanism between the first, ferromagnetic and third mold materials, here in the form or ridges 18c″. Other examples of securing mechanisms include the use of an adhesive material and/or various other features designed to provide interference and/or an interlocking mechanism between the mold materials.
Referring also to
Referring to
The ferromagnetic mold material 80 comprises a ferromagnetic material and is tapered from a first end 80a proximate to the lead frame 70 to a second end 80b distal from the lead frame. The active die surface 62a is opposite the die surface 62b which is attached to the die attach area 66 and thus, this configuration may be referred to as a “die up” arrangement.
The ferromagnetic mold material 80 is tapered along both its outer circumferential surface 82a and its inner surface 82b from its first end 80a to its second end 80b. Here again, the angle of taper of the surface 82a may be on the order of less than 15-20 degrees. The angle of the taper of the inner surface 82b may be the same as or similar to the angle of the taper of the outer surface 82a.
The non-conductive mold material 74 has a protrusion 76 extending away from a second surface 70b of the lead frame 70 as shown. The protrusion 76 prevents there being a void in the bottom surface of the sensor 60 (adjacent to the second end 80b of the ferromagnetic mold material), since the presence of a void may make overmolding (described below) more difficult. It will be appreciated by those of ordinary skill in the art that the protrusion may extend all or only part of the way to the second end 80b of the ferromagnetic mold material (see also
The ferromagnetic mold material 80 has a non-contiguous central region, here in the form of a central aperture defined by the inner circumferential surface 80a and resulting in a ring, or O-shaped magnet 80. Here again however, it will be appreciated that the non-contiguous central region of the ferromagnetic mold material 80 may take other shapes, so as to form a D-shaped, C-shaped, or U-shaped structure as examples.
The ferromagnetic mold material 80 may be comprised of a hard ferromagnetic material to form a bias magnet. Alternatively, it will be appreciated that the ferromagnetic mold material 80 may be comprised of a soft ferromagnetic material to thereby form a concentrator.
The sensor 60 may, optionally, include a third mold material 90 in the form of an overmold in order to protect and electrically insulate the device. The third mold material 90 may be applied during a third molding step (
Suitable materials for providing the overmold material 90 include, but are not limited to standard die encapsulation mold compounds such as PPS, nylon, SUMIKON® EME of Sumitomo Bakelite Co., Ltd., or Hysol® mold compounds of Henkel AG & Co. KGaA.
Referring also to
Referring also to
A plurality of leads 120a-120h of the lead frame are electrically coupled to circuitry supported by the die, here with wire bonds 118a-118d (as shown for leads 120e-120h, respectively). The capacitors 102a, 102b may be useful to reduce EMC, ESD or address other electrical issues with the sensor 100. For example, with capacitors 102a, 102b, power to the sensor may be held longer in order to prevent a power on reset state by holding an output state in the case of a broken or damaged wire. It is also possible to have other numbers of capacitors, for example one capacitor may be provided between a power and ground or output and ground pins.
The lead frame 110 may have a cutout, depressed, or recessed region 114 (
The non-conductive mold material 104 and the ferromagnetic mold material 108 may be the same as, or similar to the non-conductive and ferromagnetic mold materials discussed above in connection with
The ferromagnetic mold material 108 is comprised of a ferromagnetic material. Here again, the ferromagnetic material comprising the ferromagnetic mold material 108 may be a soft ferromagnetic material of the type described above, in which case the ferromagnetic mold material forms a concentrator. Alternatively, the ferromagnetic material comprising the ferromagnetic mold material 108 may be a hard ferromagnetic material of the type described above, in which case the ferromagnetic mold material forms for example a bias magnet.
Referring also to
A plurality of leads 142a-142f of the lead frame, here in the form of surface mount leads, are electrically coupled to circuitry supported by the die, here with wire bonds 144a-144d (as shown for leads 142c-142f, respectively). Capacitors 132a-132c are attached to the lead frame 140 on the second surface 140b of the lead frame opposite the surface 146a on which the die attach area 148 is located, as shown in the cross-section of
The non-conductive mold material 134 and the ferromagnetic mold material 138 may be the same as, or similar to the non-conductive and ferromagnetic mold materials discussed above in connection with
The ferromagnetic mold material 138 is comprised of a ferromagnetic material. Here again, the ferromagnetic material comprising the ferromagnetic mold material 138 may be a soft ferromagnetic material of the type described above, in which case the ferromagnetic mold material forms a concentrator or magnetic flux guide. Alternatively, the ferromagnetic material comprising the ferromagnetic mold material 138 may be a hard ferromagnetic material of the type described above, in which case the ferromagnetic mold material forms a bias magnet.
Referring also to
Referring to
The sensor 150 also includes a semiconductor die 166 having a first surface 166a and a second, opposing surface 166b. The die 166 has a magnetic field sensing element 158 disposed in the first surface 166a. The die 166 is disposed on the lead frame 156 so that the magnetic field sensing element 158 is in close proximity to the current conductor portion 154. The die 166 has an orientation that is upside down (i.e., the first surface 166a is directed downward) in relation to the conventional orientation with which a die is mounted in an integrated circuit package and may be referred to as a “flip-chip” configuration.
Solder balls 160a-160c on the first surface 166a are coupled directly to the leads 152e-152h as shown. An insulator 164 separates the die 166 from the lead frame 156. The insulator 164 can be provided in a variety of ways. For example, in one embodiment, a first portion of the insulator 164 includes a layer of a BCB resin material deposited directly on the first surface 166a of the die 166. A second portion of the insulator 164 may include a layer of underfill material or a tape material including but not limited to a polymer tape such as a Kapton® tape, deposited on the lead frame 156.
With this small outline integrated circuit (SOIC) package arrangement, the Hall effect element 158 is disposed in close proximity to the current conductor portion 154 and at a predetermined position relative to the conductor portion 154, such that a magnetic field generated by an electrical current passing though the current conductor portion 154, is in a direction substantially aligned with a maximum response axis of the magnetic field sensing element 158. Additional aspects of the sensor 150 are described in a U.S. Patent Application Publication No. US2008/0297138, entitled “Current Sensor,” which is assigned to the Assignee of the subject application.
While three solder balls 160a-160c are shown, any number of solder balls can be provided, including dummy solder balls for stabilizing the die 166. Also, while solder balls 160a-160c are shown, other connection methods can also be used, including, but not limited to gold bumps, eutectic or high lead solder bumps, no-lead solder bumps, gold stud bumps, polymeric conductive bumps, anisotropic conductive paste, or conductive film.
The non-conductive mold material 174 and the ferromagnetic mold material 178 may be the same as, or similar to the non-conductive and ferromagnetic mold materials discussed above in connection with
The ferromagnetic mold material 178 is comprised of a ferromagnetic material. Here again, the ferromagnetic material comprising the ferromagnetic mold material 178 may be a soft ferromagnetic material of the type described above, in which case the ferromagnetic mold material forms a concentrator or magnetic flux shield. In operation, the flux concentrator 178 tends to concentrate the magnetic flux generated by the current passing through the current conductor portion 154 so as to cause the current sensor 150 to have a higher sensitivity than otherwise possible. The flux concentrator 178 will also tend to guide small fields away from the magnetic sensor element in certain configurations and therefore shield the sensor from externally applied stray fields. Alternatively, the ferromagnetic material comprising the ferromagnetic mold material 178 may be a hard ferromagnetic material of the type described above, in which case the ferromagnetic mold material forms a bias magnet.
Referring to
The non-conductive mold material 190 and the ferromagnetic mold material 194 may be the same as, or similar to the non-conductive and ferromagnetic mold materials discussed above in connection with
The ferromagnetic mold material 194 contacts several surfaces of the non-conductive mold material 190, including portions of a top surface 190a of the non-conductive mold material, as shown. With this arrangement of the ferromagnetic mold material 194 being adjacent to the magnetic field sensing elements 184a, 184b, lower magnetic fields may be achieved than in embodiments in which the ferromagnetic mold material does not extend over the top surface 190a of the non-conductive mold material (e.g.,
Referring to
In step 204, the semiconductor die (e.g., die 14 of
In an optional step 206, an integrated component (e.g., capacitors 102a-102b of
In a further optional step 208, circuitry supported by the die including, but not limited to the magnetic field sensing element, is electrically coupled to leads of the lead frame, such as by wire bonding. Step 208 is optional because in certain configurations, such as the flip-chip configuration of
The non-conductive mold material is formed in steps 212 and 216 in which the die/lead frame subassembly is placed in a mold cavity into which the non-conductive mold material is introduced, such as by injection molding, compression molding, transfer molding or potting.
In step 218, the subassembly, now including the non-conductive mold material, is removed (optionally following a time interval appropriate for curing, depending on the composition of the non-conductive mold material) from the first mold cavity and placed in a second mold cavity. In step 222, the ferromagnetic mold material is introduced into the second mold cavity to form a bias magnet or concentrator.
As noted above, in some embodiments, the ferromagnetic mold material can be secured to the non-conductive mold material using an adhesive, such as a thermoset adhesive (e.g., a two part epoxy). According to one such example, prior to step 222 (for example between steps 218 and 222), the epoxy is applied to the bottom surface 20b and lower side portions of the non-conductive mold material 20 (
If the sensor is to include a third mold material (e.g., third mold material 54 of
Referring also to
In step 238, the subassembly including the lead frame and ferromagnetic mold material is removed from the mold cavity and the semiconductor die is attached to the lead frame die attach area, such as by soldering or with the use of an epoxy or an adhesive tape. In optional step 240, an integrated component, such as capacitors 102a-102b of
In a further optional step 242, circuitry supported by the die including is electrically coupled to leads of the lead frame, such as by wire bonding. Step 242 is optional because in certain configurations, such as the flip-chip configuration of
The non-conductive mold material (such as mold material 20 of
In embodiments in which the sensor includes a third mold material (e.g., third mold material 54 of
The mold steps of the fabrication processes described in connection with
In some applications transfer molding is desirable because of the relatively lower pressures and thinner mold cavity requirements (as compared to injection molding for example). As a result the lower pressures, transfer molding generally can result in lower stress on the sensor and the ability to use thinner mold cavities can increase the throughput per mold shot, thereby reducing the cost of fabrication.
Referring also to
The thickness of the ferromagnetic layer 254 may be tailored for a particular application and particular sensor characteristics, including but not limited to the sensitivity of the magnetic field sensing element and the airgap. Illustrative thicknesses for layer 254 are on the order of 100 to 500 microns.
Referring also to
Referring also to
Referring also to
Solder balls 334 are formed for coupling the magnetic field sensing element 324 and associated circuitry to a lead frame, such as any of the above-described lead frames, a Printed Circuit Board (PCB), or other substrate with die or components, such as may take the form of a Multi-Chip Module (MCM) for example. While the solder balls 334 may be formed over the ferromagnetic layer 330, here, regions of the layer 330 are opened, such as by laser ablation, to permit the solder balls to contact the die 328, as shown. Through Silicon Vias (TSVs) 338 are formed through the die 328 to couple the magnetic field sensing element 324 and associated circuitry to the solder balls 334, as shown, for further coupling to a lead frame. The TSVs may be formed prior to application of the ferromagnetic material 330 to the wafer to isolate the ferromagnetic materials from the wafer fabrication process and reduce potential cross-contamination of the TSV tool.
Another magnetic field sensor embodiment 340, that may be formed by dicing the semiconductor wafer 250 of
Referring also to
In step 374, a layer of ferromagnetic material, such as layer 310 of
A lead frame may be formed in an optional step 378. Various materials and processes may be used to form the lead frame. As an example, the lead frame may be a stamped or etched metal, such as copper, a copper alloy, or in some instances a soft magnetic material such as Kovar™.
In optional step 386, the die and the magnetic field sensing element and associated circuitry are attached to the lead frame. The die/lead frame subassembly is placed into a mold cavity in optional step 390, and an overmold material is introduced into the mold cavity to enclose the die and a portion of the lead frame in optional step 394. Steps 378-394 are considered optional since, as mentioned above in connection with
Another magnetic field sensor embodiment 400 is shown in
A bias magnet 410 is provided with a non-contiguous central region 410a. As in the above-described embodiments, the bias magnet 410 may take the form of a ring-shaped structure in which case the non-contiguous central region is an aperture or alternatively may form only a partial or alternative ring-shaped structure, such as a D-shaped structure, a C-shaped structure, or a U-shaped structure.
The magnet 410 includes one or more channels 410b extending laterally from the central region 410a. The die/lead frame/magnet subassembly is overmolded with an overmold material 412 to enclose the die, magnet, and a portion of the lead frame. Here, the magnet channel 410b is provided for the purpose of facilitating the overmolding step as will be described.
The bias magnet 410 may be formed by a molding process, such as injection molding or transfer molding, as described above in the case of the ferromagnetic mold material in the various embodiments. In this case, the magnet 410 may be molded to the lead frame 406 (e.g., in the manner described above in connection with
Referring also to
In step 436, the die/lead frame subassembly is placed into a mold cavity for overmolding with an overmold material 412 (
Referring also to
Here, the die 452 is attached to the top of the lead frame 454. An adhesive may be used to secure the die to the lead frame 454 and more particularly to lead frame portions 454a, 454b, and 454c. Thus, in this embodiment, since the die attach area of the lead frame 454 extends across multiple leads 454a-454c, the adhesive attaching the die to the lead frame must be comprised of a non-conductive material, such as a non-conductive epoxy, or a die attach tape such as a Kapton® tape. Here, leads 454a-454c are electrically coupled to the die 452 by wire bonds 480. The sensor 450 may be fabricated according to the above-described illustrative processes, such as are shown in
The sensor 450 includes two securing mechanisms. The first securing mechanism is provided in the form of slots 484 in the lead frame that serve to enhance adhesion of the non-conductive mold material 456 to the lead frame 454. A second securing mechanism, in the form of overhanging portions 486 of the lead frame that extend beyond the non-conductive mold material, serve to enhance adhesion of the non-conductive mold material 456 to the ferromagnetic mold material 458 and the lead frame. As noted above in conjunction with
Referring to
As in the sensor 10 of
The sensor 500 differs from the sensor 10 (
Referring to
As in the sensor 10 of
The sensor 510 differs from the sensor 10 (
More particularly, the separately formed element 514 is not formed by a molding step in conjunction with other elements of the sensor 510. The element 514 may be a machined or sintered element or it may be a separately molded part, as examples.
The element 514 may be secured to the region 512 of the mold material 30 by various techniques. For example, the element 514 may be secured to the surface 32b of the mold material 30 with an adhesive or with a press fit arrangement. As another example, the separately formed element 514 may be placed in a mold cavity into which the mold material 30 is injected for example, in which case the element may be secured to the mold material 30 with interfering features, such as barbs extending from the element. As yet another example, the material 30 could be potted with a potting material that may be filled with a ferromagnetic material. It will be appreciated by those of ordinary skill in the art that while the illustrated element 514 has a taper complementary to the taper of the region 512 of the mold material 30, in some embodiments the element 514 and/or the region 512 may not be tapered, or tapered with different or multiple slopes.
The element 514 may be comprised of a hard ferromagnetic material, a soft ferromagnetic material, or a non-ferromagnetic, non-conductive material. As one example, the separately formed element 514 may be comprised of a potting compound filled with a soft ferromagnetic material, such as a soft ferrite. As another example, the separately formed element 514 may be a sintered steel rod sized and shaped to fit in the region 512. In assembly, the element 514 may be positioned in the region 512 and secured to the surface 32b of the mold material 30 with an adhesive. Alternatively, the mold material 30 may be molded around the steel rod element 514.
Referring to
The sensor 520 differs from the sensor 100 of
Lead frame slots 524a, 524b, and 524c tend to reduce a size (e.g., a diameter or path length) of the closed loops and the position of the loops with respect to the sensing element(s) in which the eddy currents travel in the lead frame 524. It will be understood that the reduced size of the closed loops in which the eddy currents travel results in smaller eddy currents for a smaller local affect on the changing magnetic field that induced the eddy current. Therefore, the measured magnetic field of a sensor having a Hall effect 122 element is less affected by eddy currents due to the slots 524a-524c.
Instead of an eddy current rotating about the Hall effect element 122, the slot(s) 524a-524c result in eddy currents to each side of the Hall element. While the magnetic fields resulting from the eddy currents are additive, the overall magnitude field strength, compared to a single eddy current with no slot, is lower due to the increased distance of the eddy currents to the sensing element(s). While three slots 524a-c are shown, the eddy current influence on the Hall effect element 122 would be reduced by only having the slot 524c under the sensing element 122.
It is understood that any number of slots can be formed in a wide variety of configurations to meet the needs of a particular application. In the illustrative embodiment of
It is understood that the term slot should be broadly construed to cover generally interruptions in the conductivity of the lead frame. For example, slots can include a few relatively large holes as well as smaller holes in a relatively high density. In addition, the term slot is not intended to refer to any particular geometry. For example, slot includes a wide variety of regular and irregular shapes, such as tapers, ovals, etc. Further, it is understood that the direction of the slot(s) can vary. Also, it will be apparent that it may be desirable to position the slot(s) based upon the type of sensor.
The slotted lead frame 524 can be formed from a metal layer of suitable conductive materials including but not limited to, for example, copper, copper alloys, aluminum, copper, titanium, tungsten, chromium, Kovar™ and/or nickel or alloys of the metals. Additional details of the slotted lead frame 524 may be found in U.S. Patent Application Publication No. US-2012-0086090-A1 for example, which application is assigned to the assignee of the subject invention and incorporated herein by reference in its entirety.
The sensor 520 further differs from the sensor 100 of
The passive component 106 may take various forms, such as a resistor, capacitor, or inductor as examples, which component(s) is provided for various purposes, such as to improve EMC performance. In an embodiment the element 106 is a resistor. Also, it will be appreciated that while only one lead is shown to have an in-line passive component 106, the same or a different type of passive component can be similarly coupled in line with more than one lead. Also, a single lead, such as that formed by lead portions 120a and 120e, can have more than one break and more than one passive component coupled across the respective breaks so as to form an arrangement in which more than one passive component is coupled in series with a respective lead.
Referring to
Referring also to the top view of the sensor 540 in
According to an aspect of the invention, the sensor 540 contains a suppression device 544. The suppression device 544 is provided in order to enhance the electromagnetic compatibility (EMC) of the sensor 540 and to reduce electrostatic discharge (ESD). To this end, the suppression device 544 comprises a ferromagnetic material.
The suppression device 544 may be provided in various geometries (i.e., size and shape), at various locations of the sensor, and may be fabricated by various techniques, including molding. Most generally, the suppression device 544 is integral with the sensor 540.
The molded ferromagnetic suppression device 544 is positioned to enclose a portion of one or more leads at a location on the respective lead(s) spaced from the non-conductive mold material 20. The particular location of the suppression device 544 along the length of the lead can be readily varied and may be a function of whether the leads will be bent for assembly for example.
The suppression device 544 comprises a ferromagnetic mold material, that may be the same as or similar to the ferromagnetic mold material 30. Due to the placement of suppression device 544 on the leads, the mold material comprising the device 544 must be of sufficient resistivity to prevent unwanted electrical signals from being passed between the leads. The molded ferromagnetic suppression device 544 may be comprised of a hard or permanent magnetic material. In some embodiments it may be desirable to align hard ferromagnetic particles during molding to form a more anisotropic or directional magnetic material by molding in the presence of a magnetic field; whereas, in other embodiments, a sufficient ferromagnetic material may result without an alignment step during molding for isotropic materials. It will be appreciated that a NdFeB or a SmCo alloy may contain other elements to improve temperature performance, magnetic coercivity, or other magnetic properties useful to a magnetic design.
In other embodiments, the suppression device 544 is comprised of a soft ferromagnetic material. In some embodiments, it may be desirable for the molded soft ferromagnetic element 544 to have a relatively low coercivity and high permeability. Suitable soft ferromagnetic materials include, but are not limited to permalloy, NiCo alloys, NiFe alloys, steel, nickel, and soft ferromagnetic ferrites. As described above for hard ferromagnetic materials, it may also be desirable to form a soft ferromagnetic suppression device 544 in the presence of a magnetic field for a more anisotropic ferromagnetic material. In another embodiment it may be desirable to form an isotropic soft ferromagnetic suppression body without using a magnetic field applied during molding.
The molded suppression device 544 may be formed at the same time and with the same fabrication technique as the ferromagnetic mold material 30, such as in step 222 of
The suppression device 544 extends from the lead 24a in a first direction (e.g., above the lead) by a height “a” and extends from the lead 24a in a second direction (e.g., below the lead) by a height “b”. Here, the heights a and b are shown to be approximately the same; however, it will be appreciated that this need not be the case. Thus, the overall height of the suppression device 544 is a+b, additionally plus the thickness of the lead. This overall height of the suppression device may be (but is not required to be) less than the overall height of the non-conductive mold material 20 (given by heights c+d, additionally plus the thickness of the lead), so that the suppression device does not extend beyond the main package body defined by mold material 20 alone or in combination with mold material 30.
Referring also to the top view of
Referring also to
Suppression device 554 comprises a first mold element 558 and a second mold element 560. The first mold element 558 encloses a portion of at least one lead and the second mold element 560 encloses at least a portion of the first mold element.
The first mold element 558 may be the same as or similar to the non-conductive mold material 20 and thus, may comprise thermoset and thermoplastic mold compounds and other commercially available IC mold compounds. It will be appreciated that the first mold element 558 can contain a ferromagnetic material, such as in the form of ferromagnetic particles, as long as such material is non-conductive. The second mold element 560 of the suppression device 554 may be the same as or similar to the ferromagnetic mold material 30 as discussed above or may be comprised of a soft ferromagnetic material. And a third mold element may also be provided.
The first and second mold elements 558, 560 may be fabricated by the same or different techniques and at the same or a different time as the non-conductive and ferromagnetic mold materials 20, 30, respectively, and as each other. In one embodiment, the first mold element 558 is formed by transfer molding at the same time as the non-conductive mold material 20 (e.g., in step 216 of
While the second mold element 560 is shown to be spaced from and not in contact with the lead 24, it will be appreciated by those of ordinary skill in the art that in certain embodiments, it may be desirable to allow the second mold element to contact the lead. In fact, if the second mold element 560 is sufficiently non-conductive, so as not to undesirably alter the electrical performance of the lead, then the second molded element can enclose the first mold element 558 and thus contact the lead.
The suppression device 554 extends from the lead 24 in a first direction (e.g., above) by a height f+a (the height of the first and second mold elements, respectively) and extends from the lead 24 in a second direction (e.g., below) by a height g+b (the height of the first and second mold elements, respectively). Here, the heights a and b are shown to be approximately the same as each other and the heights f and g are shown to be approximately the same as each other; however, it will be appreciated that this need not be the case. In other words, the first and/or second mold element can extend in one direction from the lead more than in another direction. Also, in the illustrated embodiment, while the thickness of the first mold element 558 is shown to be approximately the same as the thickness of the second mold element, this need not be the case.
The overall height of the suppression device 554 (i.e., a+b+f+g, additionally plus the thickness of the lead) may be (but is not required to be) less than the overall height of main package body defined by the height of the mold material 20 in combination with the height of the mold material 30.
Referring to
As is known and described in the above-referenced U.S. Patent Application Publication No. US-2012-0086090-A1, it is sometimes desirable to integrate one or more passive components, such as capacitors, resistors, inductors, on an integrated circuit lead frame for filtering and/or other functionality. The passive component 576, such as a surface mount capacitor, may be fabricated by techniques described in the above-referenced U.S. Patent Application Publication No. US-2012-0086090-A1.
The suppression device 572 may comprise a ferromagnetic mold material that is the same as or similar to the ferromagnetic mold material 30 and that may be formed at the same or at a different time than the ferromagnetic mold material 30 and/or by the same or a different fabrication technique. In one embodiment, the molded ferromagnetic suppression device 572 is formed by an injection molding process at the same time that the ferromagnetic mold material 30 is formed. The mold material comprising the device 572 must be of sufficient resistivity to prevent unwanted electrical signals from being passed between the leads.
In another embodiment, the element 572 may be made of the same material and at the same time as the non-conductive mold material 20. The pressure of molding is generally lower for transfer molding compared to injection molding and therefore the lower pressure of the molding process during molding of the non-conductive mold material 20 at the same time as suppression device 572 may be desirable for reliability of the attachment of the passive component 576 to the lead frame 24.
The molded device 572 is sized and shaped to enclose the passive component(s) 576, as shown. The suppression device 572 extends from the lead 24a in a first direction (e.g., above) by a height “a” and extends from the lead 24a in a second direction (e.g., below) by a height “b”. Here, the heights a and b are shown to be somewhat different, with the height a being greater than the height b to enclose the passive component 576; however, it will be appreciated that the heights a and b may be substantially the same as long as the height a is sufficient to enclose the passive component. The overall height of the suppression device 572 of a+b, additionally plus the thickness of the lead, may be (but is not required to be) less than the overall height of the non-conductive mold material 20 (given by heights c+d, additionally plus the thickness of the lead), so that the suppression device 572 does not extend beyond the main package body defined by mold material 20 alone or in combination with mold material 30. The passive element 576 is shown on the same side of the lead frame as the die 14, but in another embodiment the capacitor could be on the opposite side of the lead frame. In such an embodiment the distance a may be smaller than the distance b shown in
Referring also to the top view of sensor 570 in
Referring to
The suppression device 594 encloses one or more passive components, here represented by capacitor 576, as well as one or more mold elements, here a first mold element 596 and a second mold element 598. The first mold element 596 encloses at least one passive component 576 and a portion of the leads to which the passive component is coupled and the second mold element 598 encloses at least a portion of the first mold element.
The first mold element 596, like the mold element 558 of
In another embodiment, element 598 may be formed during a third molding process to allow a soft ferromagnetic material to be used for 598 when element 30 is made of a hard ferromagnetic material and body 20 is made of a non-conductive material, which is either ferromagnetic or not ferromagnetic.
The first and second mold elements 596, 598 may be fabricated by the same or different techniques and at the same or a different time than the non-conductive and ferromagnetic mold materials 20, 30, respectively, and as each other. In one embodiment, the first mold element 596 is formed by transfer molding at the same time as the non-conductive mold material 20 (e.g., in step 216 of
In the case where a third mold is used to form element 598, the third mold material may be of a soft ferromagnetic mold material and formed at a different time than the injection mold of element 30. This third mold step does not have to be third in sequence as it could occur after the molding of non-conductive mold material 20 but before the molding of ferromagnetic mold material 30. Although in many cases the third mold material would be a soft ferromagnetic material, in other embodiments this third mold material may be a hard ferromagnetic material as well.
While the second mold element 598 is shown to be spaced from and not in contact with the lead 24, it will be appreciated by those of ordinary skill in the art that in certain embodiments, it may be desirable to allow the second mold element to contact the lead. In fact, if the second mold element 598 is sufficiently non-conductive, so as not to undesirably alter the electrical performance of the lead, then the second molded element can enclose the first mold element 596 and thus contact the lead.
The suppression device 594 extends from the lead 24a in a first direction (e.g., above) by a height f+a (the height of the first and second mold elements, respectively) and extends from the lead 24 in a second direction (e.g., below) by a height g+b (the height of the first and second mold elements, respectively). Here, the heights a and b are shown to be approximately the same as each other and the heights f and g are shown to be approximately the same as each other; however, it will be appreciated that this need not be the case. The height a is selected to enclose the passive component 576. Also, in the illustrated embodiment, while the thickness of the first mold element 596 is shown to be approximately the same as the thickness of the second mold element, this need not be the case.
The overall height of the suppression device 594, a+b+f+g, additionally plus the thickness of the lead, may be (but is not required to be) less than the overall height of the main package body defined by the height mold material 20 in combination with the height of the mold material 30.
Referring to
Suppression device 604 is provided in the form of a ferromagnetic bead that is inserted over or around the lead 24 during manufacture, prior to fabrication of the non-conductive mold material 20 so that the bead is enclosed by the non-conductive mold material, as shown.
The bead 604 has a central aperture that is sized to fit over the lead 24. The bead may be deformable and have a central aperture dimension selected to result in a slight compression fit with respect to the lead. With this arrangement, during manufacture, the bead can be slipped onto the lead 24 and slid or pushed along the length of the lead to a location close to the die 14. The compression fit results in the lead remaining in place at the location close to the die in order to facilitate molding of the non-conductive mold material 20 over a portion of the lead frame, the die, and the bead.
The bead may be sphere or tubular shaped as examples and may be symmetrical with respect to its central aperture so as to have a substantially circular cross-section or alternatively, the bead may be offset with respect to its central aperture and may have an alternative cross-section, such as an oval or rectangular cross-section.
The overall diameter of the suppression device 604 is selected to provide desired EMC and EMI performance, as a function of the sensor type and application and the ferromagnetic material comprising the bead. Suitable materials for the ferromagnetic bead include but are not limited to soft ferrite materials.
Referring to
Suppression device 624 encloses one or more passive components, such as capacitor 576, and comprises one or more ferromagnetic beads 628 and a mold element 630. The passive component 576 may be the same as or similar to the passive component 576 of
The mold element 630 may be the same as or similar to the non-conductive mold material 20 for example. Here however, the mold element 630 is sized and shaped to enclose the passive component 576 and bead 628 as shown. Considerations affecting the height and width of the mold element 630 can be the same as or similar to considerations discussed above.
The mold element 630 may be fabricated by the same or a different technique and at the same or a different time than the non-conductive mold material 20. As an alternative, the mold element 630 may be the same as or similar to the ferromagnetic mold material 30, or may be of a third mold material, for example comprising a soft ferromagnetic material as described above.
Referring also to the top view of
Referring to
According to an aspect of the invention, the sensor 640 includes a conductive coil 644. Coils are used in magnetic field sensors for various reasons, for example to generate a magnetic field for diagnostic or self test functionality as described in a U.S. Patent Application No. 2010/00211347, for calibration as is described in a U.S. Pat. No. 8,030,918, and for resetting a GMR magnetic field sensing element as described in a U.S. Pat. No. 8,063,634, each of which is assigned to the Assignee of the subject application and incorporated herein by reference in its entirety. In many instances, such conductive coils are formed on the semiconductor die itself.
The illustrative coil 644 on the other hand is positioned relative to the magnetic field sensing element 22 to function as a back bias magnet, so as to provide a magnetic field which can be used to detect movement of a proximate target. To this end, the coil 644 is positioned adjacent to the second surface 20b of the non-conductive mold material 20 so that the transducer 22 is closer to the target 12 than the coil 644, as shown. Here again, it will be appreciated that it may be desirable in certain applications to rotate the sensor 640 by 180° so that the coil 644 is closer to the target than the transducer or to rotate the sensor by 90° so that the major face of the transducer is orthogonal to the target, thereby achieving a different type of magnetically sensitive sensor, as may be desirable when the transducer is a magnetoresistance element for example which has a different axis of sensing element sensitivity than a planar Hall element. It may also be desirable in an embodiment to rotate coil 644 such that its central axis is parallel to the surface of the die 14 for certain sensor configurations and sensing element combinations.
Various techniques and materials can be used to form the coil 644. For example, the coil can be formed from copper wire of various sizes and with various automated processes so as to provide an insulator between coil windings. The coil material selection, wire gauge selection, number of turns, and other design choices can be readily varied to suit a particular application so as to produce a magnetic field of a desired strength. The coil 644 may be formed so that each turn is in the shape of a circle, rectangle, or other shapes such as an oval, as desirable to suit a particular application and packaging arrangement.
The coil 644 may be secured to the second surface 20b of the non-conductive mold material 20 by various means. As one example, an adhesive, such as an epoxy, may be used to secure the coil in place. Once secured in place, the mold material 30 may be formed in the manner described above, such as by injection molding for example. More particularly, in accordance with the illustrative process of
In operation, a bias current is applied to the coil 644 which causes a bias magnetic field to be generated. The transducer 22 is responsive to perturbations in the magnetic field caused by movement of the target 12. It will be appreciated by those of ordinary skill in the art that the mold material 30 can be provided in the form of a hard ferromagnetic material, a soft ferromagnetic material, or even a non-conductive material. For example, in embodiments in which the material 30 is a soft ferromagnetic material, the magnetic field generated by the coil 644 can be focused or otherwise concentrated as desired by the soft ferromagnetic mold material 30. Alternatively, in embodiments in which the material 30 is a hard ferromagnetic material, the magnetic field provided by the coil 644 can be used to modulate the magnetic field provided by the hard ferromagnetic material 30, in order to thereby reduce the peak current otherwise required to provide the same peak value of magnetic field strength when compared to the case of the coil alone (i.e., if the hard ferromagnetic mold material 30 were not present). In another embodiment, a separately formed element such as element 514 of
In some embodiments, since the back bias functionality is provided by the coil, the mold material 30 may be eliminated entirely (as is shown in
Referring also to
The non-conductive mold material 74 has a protrusion 86 extending away from a second surface 70b of the lead frame 70 as shown. As explained above, the protrusion 86 prevents there being a void in the bottom surface of the sensor 650 (adjacent to the second end 80b of the ferromagnetic mold material), since the presence of a void may make overmolding more difficult. It will be appreciated by those of ordinary skill in the art that the protrusion may extend all or only part of the way to the second end 80b of the mold material.
The sensor 650 includes a coil 654 that may the same as or similar to the coil 644 of
While the sensor 650 is shown to have a protrusion 76 of the type shown in
In operation, a bias current is applied to the coil 654 which causes a bias magnetic field to be generated. The transducer 64 is responsive to perturbations in the magnetic field caused by movement of a target. It will be appreciated by those of ordinary skill in the art that the mold material 80 can be provided in the form of a hard ferromagnetic material, a soft ferromagnetic material, or even a non-conductive material. For example, in embodiments in which the material 80 is a soft ferromagnetic material, the magnetic field generated by the coil 654 can be focused or otherwise concentrated as desired by the soft ferromagnetic mold material 80. Alternatively, in embodiments in which the material 80 is a hard ferromagnetic material, the magnetic field provided by the coil can be used to modulate the magnetic field provided by the hard ferromagnetic material 80, in order to thereby reduce the peak current otherwise required to provide the same magnetic field strength with just the coil (i.e., if the hard ferromagnetic mold material 80 were not present).
Here again, since the back bias functionality is provided by the coil, the mold material 80 may be eliminated entirely (as is shown in
In applications including the mold material 80, such mold material may be tapered from a first end 80a proximate to the lead frame 70 to a second end 80b distal from the lead frame (or for some portion thereof) similarly to the embodiment of
Referring to
The sensor 660 includes a coil 664 that may the same as or similar to the coil 644 of
In operation, a bias current is applied to the coil 664 which causes a bias magnetic field to be generated and the transducer 64 is responsive to perturbations in the magnetic field caused by movement of a proximate target. While the ferromagnetic mold material (such as mold material 80 of
Having described preferred embodiments of the invention it will now become apparent to those of ordinary skill in the art that other embodiments incorporating these concepts may be used.
For example, it will be appreciated by those of ordinary skill in the art that the package types, shapes, and dimensions, including but not limited to the thicknesses of the mold materials, can be readily varied to suit a particular application both in terms of the electrical and magnetic requirements as well as any packaging considerations.
It will also be appreciated that the various features shown and described herein in connection with the various embodiments can be selectively combined. As only a few of many examples, the barbs shown in
Accordingly, it is submitted that that the invention should not be limited to the described embodiments but rather should be limited only by the spirit and scope of the appended claims. All publications and references cited herein are expressly incorporated herein by reference in their entirety.
This application is a Divisional application and claims the benefit of U.S. patent application Ser. No. 13/748,999, filed on Jan. 24, 2013, which is a Continuation-in-Part and claims the benefit of U.S. patent application Ser. No. 13/424,618, filed on Mar. 20, 2012, all of which are incorporated herein by reference in their entirety.
| Number | Name | Date | Kind |
|---|---|---|---|
| 3195043 | Burig et al. | Jul 1965 | A |
| 3281628 | Bauer et al. | Oct 1966 | A |
| 3607528 | Gessaway | Sep 1971 | A |
| 3627901 | Happ | Dec 1971 | A |
| 3661061 | Tokarz | May 1972 | A |
| 3728786 | Lucas et al. | Apr 1973 | A |
| 4048670 | Eysermans | Sep 1977 | A |
| 4188605 | Stout | Feb 1980 | A |
| 4204317 | Winn | May 1980 | A |
| 4210926 | Hacke | Jul 1980 | A |
| 4262275 | DeMarco et al. | Apr 1981 | A |
| 4283643 | Levin | Aug 1981 | A |
| 4315523 | Mahawili et al. | Feb 1982 | A |
| 4409608 | Yoder | Oct 1983 | A |
| 4425596 | Satou | Jan 1984 | A |
| 4542259 | Butt | Sep 1985 | A |
| 4573258 | Io et al. | Mar 1986 | A |
| 4614111 | Wolff | Sep 1986 | A |
| 4642716 | Wakabayashi et al. | Feb 1987 | A |
| 4670715 | Fuzzell | Jun 1987 | A |
| 4719419 | Dawley | Jan 1988 | A |
| 4733455 | Nakamura et al. | Mar 1988 | A |
| 4745363 | Carr et al. | May 1988 | A |
| 4746859 | Malik | May 1988 | A |
| 4769344 | Sakai et al. | Sep 1988 | A |
| 4772929 | Manchester | Sep 1988 | A |
| 4789826 | Willett | Dec 1988 | A |
| 4796354 | Yokoyama et al. | Jan 1989 | A |
| 4893073 | McDonald et al. | Jan 1990 | A |
| 4905318 | Fukuda et al. | Feb 1990 | A |
| 4908685 | Shibasaki et al. | Mar 1990 | A |
| 4910861 | Dohogne | Mar 1990 | A |
| 4935698 | Kawaji et al. | Jun 1990 | A |
| 4983916 | Iijima et al. | Jan 1991 | A |
| 4994731 | Sanner | Feb 1991 | A |
| 5010263 | Murata | Apr 1991 | A |
| 5012322 | Guillotte | Apr 1991 | A |
| 5021493 | Sandstrom | Jun 1991 | A |
| 5028868 | Murata et al. | Jul 1991 | A |
| 5041780 | Rippel | Aug 1991 | A |
| 5045920 | Vig et al. | Sep 1991 | A |
| 5068712 | Murakami et al. | Nov 1991 | A |
| 5077633 | Freyman | Dec 1991 | A |
| 5078944 | Yoshino | Jan 1992 | A |
| 5084289 | Shin et al. | Jan 1992 | A |
| 5121289 | Gagliardi | Jun 1992 | A |
| 5124642 | Marx | Jun 1992 | A |
| 5137677 | Murata | Aug 1992 | A |
| 5139973 | Nagy et al. | Aug 1992 | A |
| 5167896 | Hirota et al. | Dec 1992 | A |
| 5180903 | Shigeno et al. | Jan 1993 | A |
| 5185919 | Hickey | Feb 1993 | A |
| 5196794 | Murata | Mar 1993 | A |
| 5196821 | Partin et al. | Mar 1993 | A |
| 5210493 | Schroeder et al. | May 1993 | A |
| 5216405 | Schroeder et al. | Jun 1993 | A |
| 5244834 | Suzuki et al. | Sep 1993 | A |
| 5247202 | Popovic et al. | Sep 1993 | A |
| 5250925 | Shinkle | Oct 1993 | A |
| 5286426 | Rano, Jr. et al. | Feb 1994 | A |
| 5289344 | Gagnon et al. | Feb 1994 | A |
| 5315245 | Schroeder et al. | May 1994 | A |
| 5332965 | Wolf et al. | Jul 1994 | A |
| 5363279 | Cha | Nov 1994 | A |
| 5399905 | Honda et al. | Mar 1995 | A |
| 5414355 | Davidson et al. | May 1995 | A |
| 5434105 | Liou | Jul 1995 | A |
| 5442228 | Pham et al. | Aug 1995 | A |
| 5453727 | Shibasaki et al. | Sep 1995 | A |
| 5479695 | Grader et al. | Jan 1996 | A |
| 5488294 | Liddell et al. | Jan 1996 | A |
| 5491633 | Henry et al. | Feb 1996 | A |
| 5497081 | Wolf et al. | Mar 1996 | A |
| 5500589 | Sumcad | Mar 1996 | A |
| 5500994 | Itaya | Mar 1996 | A |
| 5508611 | Schroeder et al. | Apr 1996 | A |
| 5539241 | Abidi et al. | Jul 1996 | A |
| 5551146 | Kawabata et al. | Sep 1996 | A |
| 5561366 | Takahashi et al. | Oct 1996 | A |
| 5563199 | Harada et al. | Oct 1996 | A |
| 5579194 | Mackenzie et al. | Nov 1996 | A |
| 5581170 | Mammano et al. | Dec 1996 | A |
| 5581179 | Engel et al. | Dec 1996 | A |
| 5612259 | Okutomo et al. | Mar 1997 | A |
| 5614754 | Inoue | Mar 1997 | A |
| 5615075 | Kim | Mar 1997 | A |
| 5627315 | Figi et al. | May 1997 | A |
| 5631557 | Davidson | May 1997 | A |
| 5648682 | Nakazawa et al. | Jul 1997 | A |
| 5666004 | Bhattacharyya et al. | Sep 1997 | A |
| 5691637 | Oswald et al. | Nov 1997 | A |
| 5691869 | Engel et al. | Nov 1997 | A |
| 5712562 | Berg | Jan 1998 | A |
| 5714102 | Highum et al. | Feb 1998 | A |
| 5714405 | Tsubosaki et al. | Feb 1998 | A |
| 5719496 | Wolf | Feb 1998 | A |
| 5726577 | Engel et al. | Mar 1998 | A |
| 5729128 | Bunyer et al. | Mar 1998 | A |
| 5729130 | Moody et al. | Mar 1998 | A |
| 5757181 | Wolf et al. | May 1998 | A |
| 5781005 | Vig et al. | Jul 1998 | A |
| 5789658 | Henn et al. | Aug 1998 | A |
| 5789915 | Ingraham | Aug 1998 | A |
| 5804880 | Mathew | Sep 1998 | A |
| 5817540 | Wark | Oct 1998 | A |
| 5818222 | Ramsden | Oct 1998 | A |
| 5818223 | Wolf | Oct 1998 | A |
| 5822849 | Casali et al. | Oct 1998 | A |
| 5834832 | Kweon et al. | Nov 1998 | A |
| 5839185 | Smith et al. | Nov 1998 | A |
| 5841276 | Makino et al. | Nov 1998 | A |
| 5859387 | Gagnon | Jan 1999 | A |
| 5883567 | Mullins, Jr. | Mar 1999 | A |
| 5886070 | Honkura et al. | Mar 1999 | A |
| 5891377 | Libres et al. | Apr 1999 | A |
| 5912556 | Frazee et al. | Jun 1999 | A |
| 5940256 | MacKenzie et al. | Aug 1999 | A |
| 5943557 | Moden | Aug 1999 | A |
| 5963028 | Engel et al. | Oct 1999 | A |
| 5973388 | Chew et al. | Oct 1999 | A |
| 5990756 | France, Jr. | Nov 1999 | A |
| 6005383 | Savary et al. | Dec 1999 | A |
| 6016055 | Jager et al. | Jan 2000 | A |
| 6043646 | Jansseune | Mar 2000 | A |
| 6057997 | MacKenzie et al. | May 2000 | A |
| 6066890 | Tsui et al. | May 2000 | A |
| 6097109 | Fendt et al. | Aug 2000 | A |
| 6107793 | Yokotani et al. | Aug 2000 | A |
| 6136250 | Brown | Oct 2000 | A |
| 6150714 | Andreycak et al. | Nov 2000 | A |
| 6175233 | McCurley et al. | Jan 2001 | B1 |
| 6178514 | Wood | Jan 2001 | B1 |
| 6180041 | Takizawa | Jan 2001 | B1 |
| 6184679 | Popovic et al. | Feb 2001 | B1 |
| 6198373 | Ogawa et al. | Mar 2001 | B1 |
| 6225701 | Hori et al. | May 2001 | B1 |
| 6252389 | Baba et al. | Jun 2001 | B1 |
| 6265865 | Engel et al. | Jul 2001 | B1 |
| 6278269 | Vig et al. | Aug 2001 | B1 |
| 6294824 | Brooks et al. | Sep 2001 | B1 |
| 6316736 | Jairazbhoy et al. | Nov 2001 | B1 |
| 6316931 | Nakagawa et al. | Nov 2001 | B1 |
| 6323634 | Nakagawa et al. | Nov 2001 | B1 |
| 6331451 | Fusaro et al. | Dec 2001 | B1 |
| 6356068 | Sterner et al. | Mar 2002 | B1 |
| 6359331 | Rinehart et al. | Mar 2002 | B1 |
| 6365948 | Kumagai et al. | Apr 2002 | B1 |
| 6377464 | Hashemi et al. | Apr 2002 | B1 |
| 6388336 | Venkateshwaran et al. | May 2002 | B1 |
| 6396712 | Kuijk | May 2002 | B1 |
| 6411078 | Nakagawa et al. | Jun 2002 | B1 |
| 6420779 | Sharma et al. | Jul 2002 | B1 |
| 6424018 | Ohtsuka | Jul 2002 | B1 |
| 6429652 | Allen et al. | Aug 2002 | B1 |
| 6445171 | Sandquist et al. | Sep 2002 | B2 |
| 6452381 | Nakatani et al. | Sep 2002 | B1 |
| 6462531 | Ohtsuka | Oct 2002 | B1 |
| 6480699 | Lovoi | Nov 2002 | B1 |
| 6482680 | Knor et al. | Nov 2002 | B1 |
| 6486535 | Liu | Nov 2002 | B2 |
| 6501268 | Edelstein et al. | Dec 2002 | B1 |
| 6501270 | Opie | Dec 2002 | B1 |
| 6504366 | Bodin et al. | Jan 2003 | B2 |
| 6545332 | Huang | Apr 2003 | B2 |
| 6545456 | Radosevich et al. | Apr 2003 | B1 |
| 6545457 | Goto et al. | Apr 2003 | B2 |
| 6545462 | Schott et al. | Apr 2003 | B2 |
| 6553199 | Yasunaga et al. | May 2003 | B2 |
| 6566856 | Sandquist et al. | May 2003 | B2 |
| 6580159 | Fusaro et al. | Jun 2003 | B1 |
| 6583572 | Veltrop et al. | Jun 2003 | B2 |
| 6593545 | Greenwood et al. | Jul 2003 | B1 |
| 6605491 | Hsieh et al. | Aug 2003 | B1 |
| 6608375 | Terui et al. | Aug 2003 | B2 |
| 6610923 | Nagashima et al. | Aug 2003 | B1 |
| 6617846 | Hayat-dawoodi et al. | Sep 2003 | B2 |
| 6642609 | Minamio et al. | Nov 2003 | B1 |
| 6642705 | Kawase | Nov 2003 | B2 |
| 6661087 | Wu | Dec 2003 | B2 |
| 6667682 | Wan et al. | Dec 2003 | B2 |
| 6683448 | Ohtsuka | Jan 2004 | B1 |
| 6683452 | Lee et al. | Jan 2004 | B2 |
| 6692676 | Vig et al. | Feb 2004 | B1 |
| 6696952 | Zirbes | Feb 2004 | B2 |
| 6713836 | Liu et al. | Mar 2004 | B2 |
| 6714003 | Babin | Mar 2004 | B2 |
| 6727683 | Goto et al. | Apr 2004 | B2 |
| 6737298 | Shim et al. | May 2004 | B2 |
| 6747300 | Nadd et al. | Jun 2004 | B2 |
| 6759841 | Goto et al. | Jul 2004 | B2 |
| 6770163 | Kuah et al. | Aug 2004 | B1 |
| 6775140 | Shim et al. | Aug 2004 | B2 |
| 6781233 | Zverev et al. | Aug 2004 | B2 |
| 6781359 | Stauth et al. | Aug 2004 | B2 |
| 6791313 | Ohtsuka | Sep 2004 | B2 |
| 6796465 | Seidler | Sep 2004 | B1 |
| 6798044 | Joshi | Sep 2004 | B2 |
| 6798057 | Boikin et al. | Sep 2004 | B2 |
| 6798193 | Zimmerman et al. | Sep 2004 | B2 |
| 6809416 | Sharma | Oct 2004 | B1 |
| 6812687 | Ohtsuka | Nov 2004 | B1 |
| 6825067 | Ararao et al. | Nov 2004 | B2 |
| 6828220 | Pendse et al. | Dec 2004 | B2 |
| 6832420 | Liu | Dec 2004 | B2 |
| 6841989 | Goto et al. | Jan 2005 | B2 |
| 6853178 | Hayat-Dawoodi | Feb 2005 | B2 |
| 6861283 | Sharma | Mar 2005 | B2 |
| 6867573 | Carper | Mar 2005 | B1 |
| 6875634 | Shim et al. | Apr 2005 | B2 |
| 6902951 | Goller et al. | Jun 2005 | B2 |
| 6921955 | Goto et al. | Jul 2005 | B2 |
| 6943061 | Sirinorakul et al. | Sep 2005 | B1 |
| 6956282 | Alvarez et al. | Oct 2005 | B1 |
| 6960493 | Ararao et al. | Nov 2005 | B2 |
| 6974909 | Tanaka et al. | Dec 2005 | B2 |
| 6989665 | Goto | Jan 2006 | B2 |
| 6995315 | Sharma et al. | Feb 2006 | B2 |
| 7005325 | Chow et al. | Feb 2006 | B2 |
| 7006749 | Illich et al. | Feb 2006 | B2 |
| 7026808 | Vig et al. | Apr 2006 | B2 |
| 7031170 | Daeche et al. | Apr 2006 | B2 |
| 7046002 | Edelstein | May 2006 | B1 |
| 7075287 | Mangtani et al. | Jul 2006 | B1 |
| 7105929 | Shishido et al. | Sep 2006 | B2 |
| 7112955 | Buchhold | Sep 2006 | B2 |
| 7112957 | Bicking | Sep 2006 | B2 |
| 7129569 | Punzalan et al. | Oct 2006 | B2 |
| 7129691 | Shibahara et al. | Oct 2006 | B2 |
| 7148086 | Shim et al. | Dec 2006 | B2 |
| 7166807 | Gagnon et al. | Jan 2007 | B2 |
| 7193412 | Freeman | Mar 2007 | B2 |
| 7221045 | Park et al. | May 2007 | B2 |
| 7242076 | Dolan | Jul 2007 | B2 |
| 7248045 | Shoji | Jul 2007 | B2 |
| 7250760 | Ao | Jul 2007 | B2 |
| 7259545 | Stauth et al. | Aug 2007 | B2 |
| 7259624 | Barnett | Aug 2007 | B2 |
| 7265531 | Stauth et al. | Sep 2007 | B2 |
| 7269992 | Lamb et al. | Sep 2007 | B2 |
| 7279424 | Guthrie et al. | Oct 2007 | B2 |
| 7279784 | Liu | Oct 2007 | B2 |
| 7285952 | Hatanaka et al. | Oct 2007 | B1 |
| 7304370 | Imaizumi et al. | Dec 2007 | B2 |
| 7323780 | Daubenspeck et al. | Jan 2008 | B2 |
| 7323870 | Tatschl et al. | Jan 2008 | B2 |
| 7355388 | Ishio | Apr 2008 | B2 |
| 7358724 | Taylor et al. | Apr 2008 | B2 |
| 7361531 | Sharma et al. | Apr 2008 | B2 |
| 7378721 | Frazee et al. | May 2008 | B2 |
| 7378733 | Hoang et al. | May 2008 | B1 |
| 7385394 | Auburger et al. | Jun 2008 | B2 |
| 7476816 | Doogue et al. | Jan 2009 | B2 |
| 7476953 | Taylor et al. | Jan 2009 | B2 |
| 7518493 | Bryzek et al. | Apr 2009 | B2 |
| 7557563 | Gunn et al. | Jul 2009 | B2 |
| 7573112 | Taylor | Aug 2009 | B2 |
| 7598601 | Taylor et al. | Oct 2009 | B2 |
| 7676914 | Taylor | Mar 2010 | B2 |
| 7687882 | Taylor et al. | Mar 2010 | B2 |
| 7696006 | Hoang et al. | Apr 2010 | B1 |
| 7700404 | Punzalan et al. | Apr 2010 | B2 |
| 7709754 | Doogue et al. | May 2010 | B2 |
| 7750447 | Chang et al. | Jul 2010 | B2 |
| 7768083 | Doogue et al. | Aug 2010 | B2 |
| 7777607 | Taylor et al. | Aug 2010 | B2 |
| 7808074 | Knittl | Oct 2010 | B2 |
| 7816772 | Engel et al. | Oct 2010 | B2 |
| 7816905 | Doogue et al. | Oct 2010 | B2 |
| 7838973 | Dimasacat et al. | Nov 2010 | B2 |
| 7839141 | Werth et al. | Nov 2010 | B2 |
| 7939372 | Chang | May 2011 | B1 |
| 7956604 | Ausserlechner | Jun 2011 | B2 |
| 8030918 | Doogue et al. | Oct 2011 | B2 |
| 8035204 | Punzalan et al. | Oct 2011 | B2 |
| 8058870 | Sterling | Nov 2011 | B2 |
| 8063634 | Sauber et al. | Nov 2011 | B2 |
| 8080993 | Theuss et al. | Dec 2011 | B2 |
| 8080994 | Taylor et al. | Dec 2011 | B2 |
| 8093670 | Taylor | Jan 2012 | B2 |
| 8106654 | Theuss et al. | Jan 2012 | B2 |
| 8138593 | Pagkaliwangan et al. | Mar 2012 | B2 |
| 8143169 | Engel et al. | Mar 2012 | B2 |
| 8207602 | Chang et al. | Jun 2012 | B2 |
| 8236612 | San Antonio et al. | Aug 2012 | B2 |
| 8253210 | Theuss et al. | Aug 2012 | B2 |
| 8283772 | Gamboa | Oct 2012 | B1 |
| 8362579 | Theuss et al. | Jan 2013 | B2 |
| 8461677 | Ararao et al. | Jun 2013 | B2 |
| 8486755 | Ararao et al. | Jul 2013 | B2 |
| 8610430 | Werth et al. | Dec 2013 | B2 |
| 8629539 | Milano et al. | Jan 2014 | B2 |
| 8773124 | Ausserlechner | Jul 2014 | B2 |
| 9116018 | Frachon | Aug 2015 | B2 |
| 9164156 | Elian et al. | Oct 2015 | B2 |
| 9201123 | Elian et al. | Dec 2015 | B2 |
| 9266267 | De Volder et al. | Feb 2016 | B2 |
| 9299915 | Milano et al. | Mar 2016 | B2 |
| 20010028114 | Hosomi | Oct 2001 | A1 |
| 20010028115 | Yanagawa et al. | Oct 2001 | A1 |
| 20010030537 | Honkura et al. | Oct 2001 | A1 |
| 20010052780 | Hayat-Dawoodi | Dec 2001 | A1 |
| 20020005780 | Ehrlich et al. | Jan 2002 | A1 |
| 20020020907 | Seo et al. | Feb 2002 | A1 |
| 20020027488 | Hayat-Dawoodi et al. | Mar 2002 | A1 |
| 20020041179 | Gohara et al. | Apr 2002 | A1 |
| 20020068379 | Cobbley et al. | Jun 2002 | A1 |
| 20020153599 | Chang et al. | Oct 2002 | A1 |
| 20020179987 | Meyer et al. | Dec 2002 | A1 |
| 20020195693 | Liu et al. | Dec 2002 | A1 |
| 20030038464 | Furui | Feb 2003 | A1 |
| 20030039062 | Takahasahi | Feb 2003 | A1 |
| 20030067057 | Wu | Apr 2003 | A1 |
| 20030164548 | Lee | Sep 2003 | A1 |
| 20030209784 | Schmitz et al. | Nov 2003 | A1 |
| 20030230792 | Wu et al. | Dec 2003 | A1 |
| 20040032251 | Zimmerman et al. | Feb 2004 | A1 |
| 20040038452 | Pu | Feb 2004 | A1 |
| 20040042146 | Berberich | Mar 2004 | A1 |
| 20040046248 | Waelti et al. | Mar 2004 | A1 |
| 20040056647 | Stauth et al. | Mar 2004 | A1 |
| 20040080308 | Goto | Apr 2004 | A1 |
| 20040080314 | Tsujii et al. | Apr 2004 | A1 |
| 20040094826 | Yang et al. | May 2004 | A1 |
| 20040135220 | Goto | Jul 2004 | A1 |
| 20040135574 | Hagio et al. | Jul 2004 | A1 |
| 20040145043 | Hayashi et al. | Jul 2004 | A1 |
| 20040155644 | Stauth et al. | Aug 2004 | A1 |
| 20040174655 | Tsai et al. | Sep 2004 | A1 |
| 20040184106 | Jayasekara | Sep 2004 | A1 |
| 20040207035 | Witcraft et al. | Oct 2004 | A1 |
| 20040207077 | Leal et al. | Oct 2004 | A1 |
| 20040207398 | Kudo et al. | Oct 2004 | A1 |
| 20040207400 | Witcraft et al. | Oct 2004 | A1 |
| 20040212053 | Koh et al. | Oct 2004 | A1 |
| 20040222503 | Lee et al. | Nov 2004 | A1 |
| 20040262718 | Ramakrishna | Dec 2004 | A1 |
| 20040263148 | Takabatake | Dec 2004 | A1 |
| 20050035448 | Hsu et al. | Feb 2005 | A1 |
| 20050040814 | Vig et al. | Feb 2005 | A1 |
| 20050045359 | Doogue et al. | Mar 2005 | A1 |
| 20050139972 | Chiu et al. | Jun 2005 | A1 |
| 20050151448 | Hikida et al. | Jul 2005 | A1 |
| 20050167790 | Khor et al. | Aug 2005 | A1 |
| 20050173783 | Chow et al. | Aug 2005 | A1 |
| 20050194676 | Fukuda et al. | Sep 2005 | A1 |
| 20050224248 | Gagnon et al. | Oct 2005 | A1 |
| 20050230843 | Williams | Oct 2005 | A1 |
| 20050236698 | Ozawa et al. | Oct 2005 | A1 |
| 20050248005 | Hayat-Dawoodi | Nov 2005 | A1 |
| 20050248336 | Sharma et al. | Nov 2005 | A1 |
| 20050253230 | Punzalan et al. | Nov 2005 | A1 |
| 20050253507 | Fujimura et al. | Nov 2005 | A1 |
| 20050266611 | Tu et al. | Dec 2005 | A1 |
| 20050270748 | Hsu | Dec 2005 | A1 |
| 20050274982 | Ueda et al. | Dec 2005 | A1 |
| 20050280411 | Bicking | Dec 2005 | A1 |
| 20060002147 | Hong et al. | Jan 2006 | A1 |
| 20060033487 | Nagano et al. | Feb 2006 | A1 |
| 20060038289 | Hsu et al. | Feb 2006 | A1 |
| 20060038560 | Kurumado | Feb 2006 | A1 |
| 20060068237 | Murphy | Mar 2006 | A1 |
| 20060071655 | Shoji | Apr 2006 | A1 |
| 20060077598 | Taylor et al. | Apr 2006 | A1 |
| 20060091993 | Shoji | May 2006 | A1 |
| 20060113988 | Hall et al. | Jun 2006 | A1 |
| 20060114098 | Shoji | Jun 2006 | A1 |
| 20060125473 | Frachon et al. | Jun 2006 | A1 |
| 20060145690 | Shoji | Jul 2006 | A1 |
| 20060152210 | Mangtani et al. | Jul 2006 | A1 |
| 20060170529 | Shoji | Aug 2006 | A1 |
| 20060175674 | Taylor | Aug 2006 | A1 |
| 20060181263 | Doogue et al. | Aug 2006 | A1 |
| 20060219436 | Taylor et al. | Oct 2006 | A1 |
| 20060232268 | Arns, Jr. et al. | Oct 2006 | A1 |
| 20060238190 | Ishio | Oct 2006 | A1 |
| 20060255797 | Taylor et al. | Nov 2006 | A1 |
| 20060261801 | Busch | Nov 2006 | A1 |
| 20060267135 | Wolfgang et al. | Nov 2006 | A1 |
| 20060283232 | Lamb et al. | Dec 2006 | A1 |
| 20060291106 | Shoji | Dec 2006 | A1 |
| 20070007631 | Knittl | Jan 2007 | A1 |
| 20070018290 | Punzalan et al. | Jan 2007 | A1 |
| 20070018642 | Ao | Jan 2007 | A1 |
| 20070044370 | Shoji | Mar 2007 | A1 |
| 20070076332 | Shoji | Apr 2007 | A1 |
| 20070085174 | Wheless | Apr 2007 | A1 |
| 20070090825 | Shoji | Apr 2007 | A1 |
| 20070099348 | Sharma et al. | May 2007 | A1 |
| 20070138651 | Hauenstein | Jun 2007 | A1 |
| 20070170533 | Doogue et al. | Jul 2007 | A1 |
| 20070188946 | Shoji | Aug 2007 | A1 |
| 20070241423 | Taylor et al. | Oct 2007 | A1 |
| 20070243705 | Taylor | Oct 2007 | A1 |
| 20070279053 | Taylor et al. | Dec 2007 | A1 |
| 20080013298 | Sharma et al. | Jan 2008 | A1 |
| 20080018261 | Kastner | Jan 2008 | A1 |
| 20080034582 | Taylor | Feb 2008 | A1 |
| 20080036453 | Taylor | Feb 2008 | A1 |
| 20080116884 | Rettig et al. | May 2008 | A1 |
| 20080230879 | Sharma et al. | Sep 2008 | A1 |
| 20080237818 | Engel et al. | Oct 2008 | A1 |
| 20080297138 | Taylor et al. | Dec 2008 | A1 |
| 20080308886 | Ausserlechner et al. | Dec 2008 | A1 |
| 20090058412 | Taylor et al. | Mar 2009 | A1 |
| 20090083963 | Otremba | Apr 2009 | A1 |
| 20090102034 | Pagkaliwangan et al. | Apr 2009 | A1 |
| 20090121704 | Shibahara | May 2009 | A1 |
| 20090122437 | Gong et al. | May 2009 | A1 |
| 20090140725 | Ausserlechner | Jun 2009 | A1 |
| 20090152696 | Dimasacat et al. | Jun 2009 | A1 |
| 20090294882 | Sterling | Dec 2009 | A1 |
| 20100019332 | Taylor | Jan 2010 | A1 |
| 20100140766 | Punzalan et al. | Jun 2010 | A1 |
| 20100141249 | Ararao et al. | Jun 2010 | A1 |
| 20100188078 | Foletto | Jul 2010 | A1 |
| 20100201356 | Foletto et al. | Jul 2010 | A1 |
| 20100211347 | Friedrich et al. | Aug 2010 | A1 |
| 20100237450 | Doogue et al. | Sep 2010 | A1 |
| 20100276769 | Theuss et al. | Nov 2010 | A1 |
| 20100295140 | Theuss et al. | Nov 2010 | A1 |
| 20100330708 | Engel et al. | Dec 2010 | A1 |
| 20110031947 | You | Feb 2011 | A1 |
| 20110050222 | Ueno et al. | Mar 2011 | A1 |
| 20110068447 | Camacho et al. | Mar 2011 | A1 |
| 20110068779 | Werth et al. | Mar 2011 | A1 |
| 20110111562 | San Antonio et al. | May 2011 | A1 |
| 20110127998 | Elian et al. | Jun 2011 | A1 |
| 20110133732 | Sauber | Jun 2011 | A1 |
| 20110175598 | Doering et al. | Jul 2011 | A1 |
| 20110204887 | Ausserlechner et al. | Aug 2011 | A1 |
| 20110267039 | Musselman et al. | Nov 2011 | A1 |
| 20110267040 | Frachon | Nov 2011 | A1 |
| 20110304327 | Ausserlechner | Dec 2011 | A1 |
| 20120013333 | Ararao et al. | Jan 2012 | A1 |
| 20120077353 | Shedletsky | Mar 2012 | A1 |
| 20120086090 | Sharma et al. | Apr 2012 | A1 |
| 20120153446 | Jiang | Jun 2012 | A1 |
| 20120153447 | Jlang | Jun 2012 | A1 |
| 20120293165 | Zwijze et al. | Nov 2012 | A1 |
| 20130026615 | Gong et al. | Jan 2013 | A1 |
| 20130113474 | Elian | May 2013 | A1 |
| 20130113475 | Elian et al. | May 2013 | A1 |
| 20130249027 | Taylor et al. | Sep 2013 | A1 |
| 20130249546 | Vig et al. | Sep 2013 | A1 |
| 20130278246 | Stegerer et al. | Oct 2013 | A1 |
| 20140320124 | David et al. | Oct 2014 | A1 |
| 20170148692 | Pavier | May 2017 | A1 |
| Number | Date | Country |
|---|---|---|
| 683 469 | Mar 1994 | CH |
| 3243039 | May 1984 | DE |
| 3243039 | May 1984 | DE |
| 4 141 386 | Jun 1993 | DE |
| 102 31 194 | Feb 2004 | DE |
| 103 14 602 | Oct 2004 | DE |
| 10 2004 054317 | May 2006 | DE |
| 10 2004 060 298 | Jun 2006 | DE |
| 10 2004 060298 | Jun 2006 | DE |
| 10 2007 018 238 | Oct 2008 | DE |
| 10 2008 064047 | Apr 2010 | DE |
| 10 2009 000460 | Jul 2010 | DE |
| 0 244 737 | Apr 1987 | EP |
| 0 361 456 | Apr 1990 | EP |
| 0409173 | Jan 1991 | EP |
| 0 537 419 | Apr 1993 | EP |
| 0 680 103 | Nov 1995 | EP |
| 0 867 725 | Sep 1998 | EP |
| 0 896 180 | Feb 1999 | EP |
| 0 898 180 | Feb 1999 | EP |
| 0944839 | Sep 1999 | EP |
| 0 680 103 | Feb 2000 | EP |
| 1 107 327 | Jun 2001 | EP |
| 1 107 328 | Jun 2001 | EP |
| 1 111 693 | Jun 2001 | EP |
| 1160887 | Dec 2001 | EP |
| 1 180 804 | Feb 2002 | EP |
| 1281974 | Feb 2003 | EP |
| 1 443 332 | Aug 2004 | EP |
| 0898180 | Nov 2004 | EP |
| 2366976 | Sep 2011 | EP |
| 2 748 105 | Oct 1997 | FR |
| 2 191 632 | Dec 1987 | GB |
| 2273782 | Jun 1994 | GB |
| S47-12071 | Apr 1972 | JP |
| 58-501372 | Aug 1983 | JP |
| 61-71649 | Apr 1986 | JP |
| 62-260374 | Nov 1987 | JP |
| S63-051647 | Mar 1988 | JP |
| 363 084176 | Apr 1988 | JP |
| 63-191069 | Aug 1988 | JP |
| 63-263782 | Oct 1988 | JP |
| 1 184885 | Jul 1989 | JP |
| H 01-184885 | Jul 1989 | JP |
| H01-184885 | Jul 1989 | JP |
| 01207909 | Aug 1989 | JP |
| 2-124575 | Oct 1990 | JP |
| H03-71073 | Mar 1991 | JP |
| 04-152688 | May 1992 | JP |
| 4-97370 | Aug 1992 | JP |
| 4-329682 | Nov 1992 | JP |
| 4-357858 | Dec 1992 | JP |
| 4-364472 | Dec 1992 | JP |
| H04-357858 | Dec 1992 | JP |
| H05-113472 | May 1993 | JP |
| 5-206185 | Aug 1993 | JP |
| H05-5226566 | Sep 1993 | JP |
| H 05-90918 | Dec 1993 | JP |
| H 06-055971 | Mar 1994 | JP |
| H06-055971 | Mar 1994 | JP |
| H07-66356 | Mar 1995 | JP |
| 8-97486 | Apr 1996 | JP |
| 08-097486 | Apr 1996 | JP |
| 8-264569 | Oct 1996 | JP |
| H08-264569 | Oct 1996 | JP |
| 9-79865 | Mar 1997 | JP |
| 09-166612 | Jun 1997 | JP |
| 9-166612 | Jun 1997 | JP |
| H10-022422 | Jan 1998 | JP |
| H 10-093001 | Apr 1998 | JP |
| 11-074142 | Mar 1999 | JP |
| 2000-39472 | Feb 2000 | JP |
| 2000-058740 | Feb 2000 | JP |
| 2000-174357 | Jun 2000 | JP |
| 2000-183241 | Jun 2000 | JP |
| 2000-294692 | Oct 2000 | JP |
| 2001-141738 | May 2001 | JP |
| 2001-165702 | Jun 2001 | JP |
| 2001-165963 | Jun 2001 | JP |
| 2001-174486 | Jun 2001 | JP |
| 2001-230467 | Aug 2001 | JP |
| 2001-289865 | Oct 2001 | JP |
| 2002-026419 | Jan 2002 | JP |
| 2002-040058 | Feb 2002 | JP |
| 2002-189069 | Jul 2002 | JP |
| 2002-202306 | Jul 2002 | JP |
| 2002-202327 | Jul 2002 | JP |
| 2003-177168 | Jun 2003 | JP |
| 2003-177171 | Jun 2003 | JP |
| 2004-55932 | Feb 2004 | JP |
| 2004 055932 | Feb 2004 | JP |
| 2004294070 | Oct 2004 | JP |
| 2004-356338 | Dec 2004 | JP |
| 2005-327859 | Nov 2005 | JP |
| 2005-337866 | Dec 2005 | JP |
| 2005-345302 | Dec 2005 | JP |
| 2006-003096 | Jan 2006 | JP |
| 2006-47113 | Feb 2006 | JP |
| 2006-164528 | Jun 2006 | JP |
| 2006-170999 | Jun 2006 | JP |
| 2007-218799 | Aug 2007 | JP |
| 2009-544149 | Dec 2009 | JP |
| 2010-093001 | Apr 2010 | JP |
| 2011029403 | Feb 2011 | JP |
| 2001 116815 | Apr 2014 | JP |
| WO 8300949 | Mar 1983 | WO |
| WO 9007176 | Jun 1990 | WO |
| WO 9914605 | Mar 1999 | WO |
| WO 0054068 | Sep 2000 | WO |
| WO 0069045 | Nov 2000 | WO |
| WO 0123899 | Apr 2001 | WO |
| WO 0174139 | Oct 2001 | WO |
| WO 2003107018 | Dec 2003 | WO |
| WO 2004027436 | Apr 2004 | WO |
| WO 2005013363 | Feb 2005 | WO |
| WO 2005026749 | Mar 2005 | WO |
| WO 2006037695 | Apr 2006 | WO |
| WO 2006 060330 | Jun 2006 | WO |
| WO 2006083479 | Aug 2006 | WO |
| WO 2008008140 | Jan 2008 | WO |
| WO 2008121443 | Oct 2008 | WO |
| WO 2010065315 | Jun 2010 | WO |
| WO 2010065315 | Jun 2010 | WO |
| WO 2013142112 | Jul 2013 | WO |
| WO 2013109355 | Sep 2013 | WO |
| WO 2013141981 | Sep 2013 | WO |
| Entry |
|---|
| Final Office Action dated Oct. 20, 2017 for U.S. Appl. No. 13/838,131; 17 pages. |
| Chinese Office Action with English translation dated Jul. 5, 2017 for Chinese Application No. 201380014780.9, 11 pages. |
| Chinese Office Action with English translation dated Jan. 4, 2018 for Chinese Application No. 201380014780.9; 4 pages. |
| Notice of Allowance dated Feb. 7, 2018 for U.S. Appl. No. 15/447,320, 7 pages. |
| Response to U.S. Non-Final Office Action dated Dec. 15, 2017 for U.S. Appl. No. 13/424,618; Response Filed Feb. 22, 2018; 16 pages. |
| Response (with English Translation of Amended Claims) to Chinese Office Action dated Jan. 4, 2018 for Chinese Application No. 201380014780.9; Response Filed Mar. 7, 2018; 20 pages. |
| Japanese Office Action with English translation dated Jun. 4, 2018 for Japanese Application No. 2017-135582; 9 pages. |
| U.S. Final Office Action dated Mar. 30, 2018 for U.S. Appl. No. 13/424,618; 17 pages. |
| U.S. Appl. No. 13/468,478, filed May 10, 2012, Pepka et al. |
| U.S. Appl. No. 13/838,131, filed Mar. 15, 2013, Ararao et al. |
| U.S. Appl. No. 13/838,864, filed Mar. 15, 2013, Ararao et al. |
| U.S. Appl. No. 15/049,732, filed Feb. 22, 2016, Milano et al. |
| U.S. Appl. No. 15/447,320, filed Mar. 2, 2017, Milano et al. |
| PCT Search Report & Written Opinion for PCT/US2006/000363 dated May 11, 2006. |
| Japanese Office Action (full translation) dated july 26, 2012; for JP Pat. App. No. 2010-501028; 5 pages. |
| Letter from Yuasa & Hera; dated Oct. 16, 2012; for JP Pat. App. No. 2010-501028; 6 pages. |
| Japanese Response to Office Action; dated Oct. 16, 2012: for JP Pat. App. No. 2010-501028; 6 pages. |
| CN Office Action (w/English translation); dated Sep. 10, 2010; for CN Pat. Appl. No. CN 2008 800088956; 14 pages. |
| PCT Search Report and Written Opinion of the ISA for PCT/US2008/053551; dated Jul. 15, 2008; 11 pages. |
| PCT International Preliminary Report on Patentability for PCT/US2008/053551; dated Oct. 8, 2009; 7 pages. |
| U.S. Appl. No. 12/878,134. |
| Office Action; dated Jun. 7, 2012; for U.S. Appl. No. 12/360,889; 9 pages. |
| Response to Office Action; dated Sep. 27, 2012; for U.S. Appl. No. 12/360,889; 12 pages. |
| Office Action; dated Jan. 18, 2013 for U.S. Appl. No. 12/360,889; 7 pages. |
| Response to Office Acton; dated Apr. 15, 2013: for U.S. Appl. No. 12/360,889; 7 pages. |
| U.S. Appl. No. 12/360,889, filed Jan. 28, 2009. |
| PCT Search Report and Written Opinion for PCT/US2009/065044 dated Jan. 7, 2010. |
| PCT International Preliminary Report on Patentability and Written Opinion of the ISA; dated Jun. 7, 2011; for PCT Pat. App. No. PCT/US2009/065044; 7 pages. |
| U.S. Appl. No. 12/328,798. |
| U.S. Appl. No. 13/241,380. |
| U.S. Appl. No. 13/350,970; filed Jan. 16, 2012; 47 pages. |
| “Gear-Tooth Sensor for Automotive Applications,” Allegro Microsystems, Inc., Aug. 3, 2001. |
| Allegro “Two-Wire True Zero Speed Miniature Differential Peak-Detecting Gear Tooth Sensor;” ATS645LSH; 2004; Allegro MicroSystems, Inc., Worcester, MA 01615; pp. 1-14. |
| Allegro MicroSystems, Inc., Hall-Effect IC Applications Guide, http://www.allegromicro.com/en/Products/Design/an/an27701.pdf, Copyright 1987, 1997, pp. 1-36. |
| Allegro “True Zero-Speed Low-Jitter High Accuracy Gear Tooth Sensor;” ATS625LSG; 2005; Allegro MicroSystems, inc. Worcester, MA 01615; pp. 1-21. |
| Bowers et al., “Microfabrcation and Process integration of Powder-Based Permanent Magnets”, Interdisciplinary Microsystems Group, Dept. Electrical and Computer Engineering, University of Florida, USA; Technologies for Future Micro-Nano Manufacturing Workshop, Napa, California, Aug. 8-10, 2011, pp. 152-165. |
| Dwyer, “Back-Biased Packaging Advances (SE, SG & SH versus SA & SB),” http://www.allegromicro.com/en/Products/Design/packaging_advances/index.asp, Copyright 2008, pp. 1-5. |
| Honeywell International, Inc., “Hall Effect Sensing and Application,” Micro Switch Sensing and Control, Chapter 3, http://content.honeywell.com/sensing/prodinfo/solidstate/technical/hallbook.pdf, date unavailable but believed to be before Jan. 2008, pp. 9-18. |
| Infineon Product Brief, TLE 4941piusC; Differential Hall IC for Wheel Speed Sensing, Oct. 2010, www.infineon.com/sensors, 2 pages. |
| Johnson et al., “Hybrid Hall Effect Device,” Appl. Phys. Lett., vol. 71, No. 7, Aug. 1997, pp. 974-976. |
| Lagorce et al.; “Magnetic and Mechanical Properties of Micromachined Strontium Ferrite/Polyimide Composites;” Journal of Microelectromechanical Systems; vol. 6. No. 4; Dec. 1997; pp. 307-312. |
| Lequesne et al.; “High-Accuracy Magnetic Position Encoder Concept;” IEEE Transactions on Industry Appications; vol. 35, No. 3, May/Jun. 1999; pp. 568-576. |
| Melexis Microelectronic Systems, Hall Applications Guide, Section 3—Applications, 1997 (48 pages). |
| Oniku et al., “High-Energy-Density Permanent Micromagnets Formed From Heterogeneous Magnetic Powder Mixtures”, Interdisciplinary Microsystems Group, Dept. of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA; Preprint of MEMS 2012 Conf. Paper, 4 pages. |
| Park et al.; “Ferrite-Based integrated Planar inductors and Transformers Fabricated at Low Temperature;” IEEE Transactions on Magnetics; vol. 33, No. 5; Sep. 1997; pp. 3322-3324. |
| Response to Office Action; dated Jan. 18, 2013; for U.S. Appl. No. 12/360,889; 6 pages. |
| Office Action dated Jun. 28, 2013; for U.S. Appl. No. 12/360,889; 7 pages. |
| Notice of Allowance; dated Mar. 1, 2013; for U.S. Appl. No. 12/328,798; 10 pages. |
| Supplemental Notice of Allowability; dated May 10, 2013; for U.S. Appl. No.12/328,798; 5 pages. |
| Notice of Allowance; dated Feb. 21, 2013; for U.S. Appl. No. 13/241,380; 9 pages. |
| Supplemental Notice of Allowability; dated May 1, 2013; for US. Appl. No. 13/241,380; 5 pages. |
| PCT Invitation to Pay Additionai Fees and Partial Search Report of the ISA; dated Jul. 8, 2013; for PCT Pat. App. No. PCT/US2013/025858; 6 pages. |
| PCT Invitation to Pay Additionai Fees and Partial Search Report of the ISA; dated Jul. 1, 2013; for PCT Pat. App. No. PCT/US2013/030112; 7 pages. |
| Japanese Notice of Reasons for Rejection (Engiish translation); dated Jul. 16, 2013; for Japanese Pat. App. No. 2011-539582; 3 pages. |
| Notification, Search Report and Written Opinion dated Sep. 3, 2013 for PCT Application No. PCT/US2013/030112, filed Mar. 11, 2013, 29 pages. |
| Notification, Search Report and Written Opinion dated Sep. 25, 2013 for PCT Application No. PCT/US2013/025858, filed Feb. 13, 2013, 37 pages. |
| Response to Office Action; fiied Sep. 30, 2013: to Office Action dated Jun. 28, 2013; for U.S. Appl. No. 12/360,889, 15 pages. |
| Letter from Yuasa and Hara dated Oct. 29, 2013; for Japanese Pat. App. No. 2011-539582; 2 pages. |
| Response to Office Action (with Claims in English) filed Oct. 15, 2013; for Japanese Pat. App. No. 2011-539582, 13 pages. |
| Office Action dated Jan. 9, 2014; for U.S. Appl. No. 13/838,131; 35 pages. |
| Chinese Office Action from Chinese Patent Application No. 201110285150.8, inciuding Engiish transiation, 15 pages. |
| Response to Chinese Office Action dated Dec. 16, 2013 from Chinese Patent Application No. 201110285150.8, including Applicant's Instruction letter to foreign associate, foreign associate emailed response and foeign associate cover letter arttached to filed response, 11 pages. |
| Office Action dated Jan. 28, 2014, for U.S. Appl. No. 13/838,864; 35 pages. |
| Finai Office Action dated Mar. 11, 2014; for U.S. Appl. No. 12/360,889 23 pages. |
| Korean Patent Application No. 10-2009-7021132 Office Action dated Mar. 28, 2014, inciuding partiai translation on foreign associate email dated Apr. 1, 2014, 11 pages. |
| Chinese Patent Appiication No. 201110285150.8 Notice of Granting Patent Right for Invention dated Apr. 17, 2014, including English translation, 4 pages. |
| Japanese Patent Application No. 2010-501028 Allowance Report dated May 7, 2014, with foreign associate cover letter, 4 pages. |
| Response to Office Action dated Jan. 28, 2014 as filed on May 28, 2014 for U.S. Appl. No. 13/838,864. |
| Response to Office Action dated Jan. 9, 2014 as filed on May 28, 2014 for U.S. Appl. No. 13/838,131. |
| Korean Patent Application No. 10-2009-7021132 Response and Amendment filed May 27, 2014, including translation of Amended Claims, Email from Foreign Associate dated Apr. 29, 2014 providing comments, Email to Foreign Associate dated May 23, 2014 providing instruction to amend claims, letter from Foreign Associate instructing Response and Amendment filed May 27, 2014. |
| Korean Patent Application No. 10-2009-7021132 Email from foreign associate dated Apr. 1, 2014 regarding office action received and listing of references from office action (translation of each reference listed above), 2 pages. |
| Response filed Jun. 23, 2014, of Office Action dated Mar. 11, 2014 for U.S. Appl. No. 12/360,889 11 pages. |
| Office Action dated Jul. 17, 2014 for U.S. Appl. No. 13/838,131, filed Mar. 15, 2013. |
| Office Action dated Jul. 17, 2014 for U.S. Appl. No. 13/838,864, filed Mar. 15, 2013. |
| Office Action dated Aug. 4, 2014 for U.S. Appl. No. 12/360,889, filed Jan. 28, 2009 15 pages. |
| Japanese Office Action dated Jun. 19, 2014; with English Translation, for Japanese Pat. App. No. 2011-539582; 8 pages. |
| Response filed Sep. 23, 2014 to Office Action dated Jul. 17, 2014; for U.S. Appl. No. 13/838,864; 18 pages. |
| Request for Continued Examination filed Sep. 23, 2014; for U.S. Appl. No. 13/838,884; 2 pages. |
| Response filed Sep. 23, 2014 to Office Action dated Jul. 17, 2014; for U.S. Appl. No. 13/838,131; 20 pages. |
| Request for Continued Examination filed Sep. 23, 2014; for U.S. Appl. No. 13/838,131; 2 pages. |
| International Search Report and Written Opinion dated Jul. 28, 2014 for PCT Application No. PCT/US2014/032125; 18 pages. |
| Office Action dated Aug. 1, 2014 for U.S. Appl. No. 13/871,131; 41 pages. |
| Response as filed on Sep. 26, 2014 for U.S. Appl. No. 13/871,181; 14 pages. |
| International Preliminary Report on Patentability dated Oct. 2, 2014 for PCT Application PCT/US2013/025858; 30 pages. |
| Korean Patent Application No. 10-2009-7021132 Notice of Allowance dated Sep. 26, 2014, including translation, 6 pages. |
| Office Action dated Oct. 6, 2014; for U.S. Appl. No. 13/838,864; 26 pages. |
| Office Action dated Oct. 2, 2014; for U.S. Appl. No. 13/838,131; 29 pages. |
| International Preliminary Report on Patentability dated Oct. 2, 2014 for PCT Application No. PCT/US2013/030112; 20 pages. |
| Office Action dated Nov. 14, 2014 for U.S. Appl. No. 13/871,131; 17 pages. |
| Claims as sent to Yuasa and Hara on Oct. 21, 2014; for Japanese Pat. App. No. 2011-539582; 9 pages. |
| Claims as filed on Oct. 28, 2014 by Yuasa and Hara, for Japanese Pat. App. No. 2011-539582; 5 pages. |
| Response filed Feb. 20, 2015; to Office Action dated Oct. 6, 2014; for U.S. Appl. No. 13/838,864; 15 pages. |
| Response filed Feb. 20, 2015; to Office Action dated Oct. 2, 2014; for U.S. Appl. No. 13/838,131; 18 pages. |
| Office action dated May 31, 2013 for U.S. Appl. No. 13/350,970; 5 pages. |
| Response to Office Action filed Jun. 19, 2013 for U.S. Appl. No. 13/350,970;7 pages. |
| Notice of Allowance dated Sep. 3, 2013 for U.S. Appl. No. 13/350,970;10 pages. |
| Restriction Requirement dated Jul. 15, 2014 for U.S. Appl. No. 13/350/970; 7 pages. |
| Response to Restriction Requirement filed Jul. 29, 2014 for U.S. Appl. No. 14/090,037;1 pages. |
| Office action dated Aug. 14, 2014 for U.S. Appl. No. 14/090,037; 7 pages. |
| Amendment filed Dec. 18, 2014 for U.S. Appl. No. 14/090,037; 9 pages. |
| Final Office Action dated Feb. 24, 2015; for U.S. Appl. No. 14/090,037; 13 pages. |
| Response filed Jan. 13, 2015 for EP Application EP12809921.5; 18 pages. |
| Response filed Jan. 28, 2015 for U.S. Appl. No. 13/871,131; 20 pages. |
| Request for Continued Examination filed Jan. 28, 2015 for U.S. Appl. No. 13/871,131; 2 pages. |
| Notice of Allowance dated Feb. 18, 2015 for U.S. Appl. No. 13/871,131;9 pages. |
| Hashemi, “The Close Attached Capacitor; A Solution to Switching Noise Problems” IEEE Transactions on Components, Hybrids, and Manufacturing Technologies, IEEE New York, US vol. 15, No. 6, Dec. 1, 1992 8 pages. |
| Infineon Technologies, “Differential Two-Wire Hall Effect Sensor-IC for Wheel Speed Applications with Direction Detection” Feb. 2005, Data Sheet. vol. 3.1, 32 pages. |
| Infineon Technologies, “Smart Hall Effect Sensor for Camshaft Applications”, 2003 Infineon Technologies AG, Germany 2 pages. |
| Motz et al., “A chopped Hall Sensor with Small Jitter and Programmable “True Power-On” Function”, IEEE Journal of Solid State Circuits, vol. 40, No. 7, Jul. 2005 8 pages. |
| Wibben J. et al., “A High-Efficiency DC-DC Converter Using 2nH Integrated Inductors”, IEEE Journal of Solid State Circuits, IEEE Service Center, Piscataway, NJ, col. 43, No. 4, Apr. 1, 2008 11 pages. |
| Arnold et al., “Hall Effect Detector and Miniswitch;” IBM Technical Disclosure Bulletin; vol. 17 No. 11; Apr. 1975; 1 page. |
| Baltes; “Future of IC Microtransducers;” Sensors & Actuators A, Elsevier Sequoia S.A Lausanne; No. 1; Aug. 1996; 14 pages. |
| Blanchard et al.; “Highly Sensitive Hall Sensor in CMOS Technology.” Sensors & Actuators A, Elsevier Sequoia S.A Lausanne, CH; vol. 85, No. 1-3; May 2000; 5 pages. |
| Cheng et al.; “Effects of Spacer Layeron Growth Stress& Magnetic Properties of Sputtered Permalloy Film;” Journal of Magnetism and Magnetic Materials, Elsevier Science Publishers; Amsterdam; NL; vol. 282; Nov. 2004; 6 pages. |
| Daughton; “GMR & SDT Sensor Applications;” IEEE Transactions on Magnetics, vol. 36, No. 5; Sep. 2000; 6 pages. |
| Edelstein et al.; “Minimizing 1/fNoise in Magnetic Sensors Using a Microelectromechanical Systems Flux Concentrator,” Journal of Applied Physics; American Institute of Pflysics; New York, US vol. 91. No. 10, May 15, 2002; 3 pages. |
| Frick et al.; “40.2: CMOS Microsystems for AC Current Measurement with Galvanic Isolation;”Proceedings IEEE Sensors 2002; IEEE int'l Conference on Sensors: New York, NY vol. 1 of 2, Conf. 1; Jun. 12, 2002; 9 pages. |
| Katyl; “Edge-Mounted Hall Cell Sensor;” IBM Technical Disclosure Bulletin; vol. 22, No. 8A; Jan. 1, 1980; 1 page. |
| Katyl “Flux Concentrator for Magnetic Field Sensor Transistor,” Ip.com Journal, ip.com Inc., West Henrietta, NY; Jun. 1, 1980; 3 Pages. |
| Leichie et al.; “A Micromachined Resonant Magnetic Field Sensor,” Proceedings of the IEEE 14th Annual Int'l Conference on Microelectio Mechanical Systems, MEMS 2001; Interlaken, SH; Jan. 21, 2001; 4 pages. |
| Popovic et al.; “lntergrated Hall Sensor/ Fiux Concentrator Microsystems;” Informacije Midem; Ljubljana , SI: Oct. 10, 2001; 5 pages. |
| Popovic,; “Not-Plate-Like Hall Magnetic Sensors and their Applications,” Sensors & Actuators A, Elsevier Sequoia S.A Lausanne: CH; vol. 85, No. 1-3; Aug. 25, 2000; 9 pages. |
| Schneider et al.; “Intergrated Flux Concentrator improves CMOS Magnetotransistors,” Proceedings of the Workshop on Micro Electrical Mechanical Systems; NL; Jan. 29, 1995;6 pages. |
| Lee et al.; “Fine Pitch Au—SnAgCu Joint-in-via Flip-Chip Packaging,” IEEE 9th Electronics Packaging Technology Conference, Dec. 10-12, 2007; 7 pages. |
| Mosberger et al.; “The Effects of Maters and Post-Mold Profiles on Plastic Encapsulated Integrated Circuits;” IEEE/IRPS; Apr. 1994, 8 pages. |
| Steiner et al.; “Fully Package CMOS Current Monitor Using Leadon-Chip Technology,” Physical Electronics Laboratory, ETHZurion, CH8093 Zurich, Switzerland; No. 0-7803-4412-X/98; IEEE 1998; 6 pages. |
| Park et al.; “Ferrite-Based integrated Planar Inductors and Transformers Fabricated at Low Temperature;” IEEE Transactions on Magnetics, vol. 33, No, 5; Sep. 1997; 3 pages. |
| Office Action dated Mar. 24, 2015; for U.S. Appl. No. 13/838,864; 25 pages. |
| Final Office Action dated Apr. 2, 2015: for U.S. Appl. No. 13/838,131; 25 pages. |
| Japanese Notice of Reasons for Rejection (English translation) dated Mar. 31. 2015; for Japanese Pat. App. No. 2011-539582; 2 pages. |
| Office Action dated Mar. 10, 2015 for U.S. Appl. No. 13/788,210; 12 pages. |
| Office Action dated Apr. 21, 2015 for U.S. Appl. No. 13/749,776; 22 pages. |
| Response to Office Action filed May 1, 2015 for European Application No. 13710112.7; 18 pages. |
| Office Action dated May 7, 2015 for U.S. Appl. No, 13/424,618; 29 pages. |
| Response to Office Action filed May 11, 2015 for European Application No. 13712040.8; 21 pages. |
| QPIDS with RCE and IDS filed Apr. 21, 2015 for U.S. Appl. No. 13/871,131;8 page. |
| Notice of Allowability dated May 21, 2015 for U.S. Appl. No. 13/871,131; 7 pages. |
| RCE and IDS filed May 22, 2015 for U.S. Appl. No. 13/871,131;7 pages. |
| Request for Continued Examination filed May 26, 2015; for U.S. Appl. No. 14/090,037; 1 page. |
| Response to Final Office Action dated May 26, 2015; to Final Office Action dated Feb. 24, 2015; for U.S. Appl. No. 14/090,037; 12 pages. |
| U.S. Appl. No. 14/090,037 Office Action dated Jun. 4, 2015, 5 pages. |
| Letter to Yuasa and Hara dated Jun. 11, 2015; for Japanese Pat. App. No. 2011-539582; 7 pages. |
| Letter from Yuasa and Hara dated Jun. 19, 2015, for Japanese Pat. App. No, 2011-539582: 1 page. |
| Japanese Argument and Amendment (inciudng Claims in English) fiied Jun. 16, 2015; for Japenese Pat. App. No. 2011-539582; 10 pages. |
| Office Action dated Jun. 19, 2015 for U.S. Appl. No. 13/871,131 of David, et al; 18 pages. |
| Response to Office Action dated Jul. 15, 2015 U.S. Appl. No. 13/424,618 of Vig, et al.; 14 pages. |
| Response to Office Action dated Jul. 15, 2015 U.S. Appl. No. 13/749,776 of David, et al; 21 pages. |
| Response to Office Action dated Jul. 15, 2015 U.S. Appl. No. 13/780,210 of Taylor, et al; 9 pages. |
| Response to Office Action dated Jul. 15, 2015 U.S. Appl. No. 13/871,131 of David, et al; 19 pages. |
| Office Action dated Aug. 12, 2015 for U.S. Appl. No. 13/788,210; 17 pages. |
| Japanese Notice for Reasons of Rejection dated Jul. 30, 2010; for Japanese Pat. App. No. 2014-219004; 4 Pages. |
| Office Acton dated Aug. 21, 2015; For U.S. Appl. No. 13/749,776; 48 pages. |
| Office Action dated Aug. 28, 2015; for U.S. Appl. No. 13/871,131; 23 pages. |
| Response dated Sep. 3, 2015 to Office Action dated Jun. 4, 2015; For U.S. Appl. No. 14/090,037; 13 Pages. |
| Japanese Office Action (with English translation) dated Sep. 1, 2015; for Japanese Pat. App. No. 2011-539582; 4 Pages. |
| Japanese Notice for Reasons of Rejection (with English translation) dated Jul. 30, 2015: for Japanese Pat. App. No. 2014-219004; 7 Pages. |
| Japanese Office Action (with English trensietion) dated Jul. 30, 2015; For Japanese Pat. App. No. 2014-219011; 10 Pages. |
| Request for Continued Examination filed Sep. 17, 2015; for U.S. Appl. No. 13/838,131; 12 pages. |
| Response filed Sep. 17, 2015; to Final Office Action dated Apr. 2, 2015; for U.S. Appl. No. 13/838,131; 12 pages. |
| Letter from Yuasa and Hara dated Nov. 9, 2015 For Japanese Pat. App. No. 2011-539582; 1 page. |
| Response with English Claims dated Oct. 7, 2015 to Office Action: For Japanese Pat. App. No. 2011-539582; 10 pages. |
| Letter from Yuasa and Hara dated Nov. 10, 2015; For Japanese Pat. App. No. 2011-539582; 1 page. |
| Japanese Notice of Allowance with English Allowed Claims dated Nov. 4, 2015; For Japanese Pat. App. No. 2011-539582; 8 pages. |
| Letter from Yuasa and Hara dated Nov. 9, 2015: For Japanese Pat. App. No. 2014-219004; 1 page. |
| Response with English Claims dated Oct. 29, 2015 to Office Action; For Japanese Pat. App. No. 2014-219004 10 pages. |
| Letter from Yuasa and Hara dated Nov. 9, 2015; For Japanese Pat. App. No. 2014-219011; 1 page. |
| Response with English Claims dated Oct. 29, 2015 to Office Action; For Japanese Pat. App. No. 2014-219011; 9 pages. |
| Final Office Action dated Nov. 5, 2015 for U.S. Appl. No. 13/424,618; 24 pages. |
| Request for Continued Examination, Response to Office Action dated Oct. 8, 2015 for U.S. Appl. No. 13/871,131; 18 pages. |
| Office Action dated Nov. 19, 2015 for U.S. Appl. No. 13/871,131; 19 pages. |
| International Preliminary Report on Patenability dated Nov. 5, 2015 for PCT Application No. PCT/US2014/032125; 15 pages. |
| Decision of Refusal with English translation dated Nov. 18, 2015 for Japanese Application No. 2014-219011; 4 pages. |
| Japanese Final Office Action with English translation dated Nov. 17, 2015; For Japanese Pat. App. No. 2014-219004; 4 pages. |
| Office Action dated Dec. 2, 2015; For U.S. Appl. No. 13/838,131; 24 pages. |
| Notice of Allowance dated Nov. 20, 2015; For U.S. Appl. No. 14/090,037; 7 pages. |
| Request for Continued Examination, Response to Office Action, IDS filed Dec. 1, 2015 for U.S. Appl. No. 13/788,210; 19 pages. |
| Request for Continued Examination, Response to Office Action, IDS dated Dec. 1, 2015 for U.S. Appl. No. 13/788,210; 18 pages. |
| Request for Continued Examination, Response to Office Action, IDS dated Dec. 7, 2015 for U.S. Appl. No. 13/749,776; 24 pages. |
| Office Action dated Dec. 24, 2015 for U.S. Appl. No. 13/749,776; 30 pages. |
| Office Action dated Jan. 6, 2016 for U.S. Appl. No. 13/788,210; 15 pages. |
| Office Action dated Dec. 6, 2000 for U.S. Appl. No. 09/264,254; 12 pages. |
| Response to Office Action dated Feb. 27, 2001 for U.S. Appl. No. 09/264,254; 11 pages. |
| Supplemental Amendment filed Mar. 15, 2001 for U.S. Appl. No. 09/264,254; 4 pages. |
| Preiiminary Amendment filed Apr. 19, 2001 for U.S. Appl. No. 09/837,991, 8 pages. |
| Office Action dated Dec. 19, 2002 for U.S. Appl. No. 09/837,991; 10 pages. |
| Response to Office Action dated Mar. 4, 2002 for U.S. Appl. No. 09/837,991; 14 pages. |
| Office Action dated May 14, 2003 for U.S. Appi. No. 09/837,991; 10 pages. |
| Amendment Under 37 C.F.R §1.116 dated Sep. 4, 2003 for U.S. Appl. No. 09/837,991; 13 pages. |
| Request for Continued Examination, Response to Office Action dated Feb. 2, 2016 for U.S. Appl. No. 13/424,618, 16 pages. |
| Response to Office Action dated Feb. 5, 2016 for U.S. Appl. No, 13/871,131, 19 pages. |
| Letter from Yuasa and Hara dated Feb. 8, 2016; For Japanese Pat. No. 2011-539582; 2 pages. |
| Japanese Office Action with English translation dated Jan. 27, 2016 for Japanese Patent Application No. 2015-501676; 8 pages. |
| Response to Office Action dated Mar. 2, 2016 for U.S. Appl. No. 13/838,131; 12 pages. |
| Response to Office Action dated Mar. 2, 2010 for U.S. Appl. No. 13/788,210; 10 pages. |
| Response to Office Action dated Mar. 3, 2018 for U.S. Appl. No. 13/749,776; 17 pages. |
| Chinese Office Action dated Jan. 29, 2016 with English translation for Chinese Application No. 201380014780.9; 17 pages. |
| Office Action dated Apr. 1, 2016 for U.S. Appl. No. 13/749,776; 34 pages. |
| German Office Action (with English Translation) dated Mar. 3, 2016 corresponding to German Patent Application No. 112008000759.4; 10 Pages. |
| Final Office Action dated Apr. 7, 2016; for U.S. Appl. No. 13/871,131; 9 pages. |
| Terminal Disclaimer filed Apr. 11, 2016 for U.S. Appl. No. 13/871,131; 2 pages. |
| Response to Final Office Action dated Apr. 12, 2016 for U.S. Appl. No. 13/871,131; 13 pages. |
| Letter to Yuasa and Hera dated Mar. 15, 2016 for japanese Application No. 2015-501676; 2 pages. |
| Final Office Action dated Apr. 22, 2016; For U.S. Appl. No. 13/838,131; 27 pages. |
| Chinese Office and English translation dated Mar. 2, 2016 for Chinese Application No. 201380026117.0; 50 pages. |
| Final Office Action dated Apr. 27, 2016 for U.S. Appl. No. 13/788,210, 18 pages. |
| Office Action dated May 6, 2010 for U.S. Appl. No 13/424,618, 15 pages. |
| Restriction Requirement dated Apr. 10, 2006 for U.S. Appl. No, 11/051,124; 4 pages. |
| Response to Restriction Requirement dated Apr. 25, 2006 for U.S. Appl. No. 11/051,124; 4 pages. |
| Office Action dated Jun. 30, 2006 for U.S. Appl. No. 11/051,124; 14 pages. |
| Final Office Action dated Dec. 15, 2006 for U.S. Appl. No. 11/051,124; 18 pages. |
| Request for Continued Examination and Response to Office Action dated Mar. 5, 2007 for U.S. Appl. No. 11/051,124; 21 pages. |
| Office Action dated May 18, 2007 for U.S. Appl. No. 11/051,124, 8 pages. |
| Response to Office Acton dated Aug. 18, 2007 for U.S. Appl. No. 11/051,124; 28 pages. |
| Final Office Action dated Nov. 2, 2007 for U.S. Appl. No. 11/051,124; 11 pages. |
| Response to Final Office Action dated Jan. 11, 2008 for U.S. Appl. No. 11/051,124; 12 pages. |
| Notice of Allowance dated Feb. 4, 2008 for U.S. Appl. No. 11/051,124, 4 pages. |
| Request for Continued Examination, Information Disclosure Statement, Petition to Withdraw from Issue Letter and Transmittal Form dated May 22, 2008 for U.S. Appl. No. 11/051,124; 7 pages. |
| Notice of Allowance dated Sep. 9, 2008 for U.S. Appl. No. 11/051,124, 4 pages. |
| Preliminary Amendment dated Apr. 16, 2007 for U.S. Appl. No. 11/693,183; 10 pages. |
| Restriction Requirement dated Dec. 29, 2009 for U.S. Appl. No. 11/693,183; 6 pages. |
| Response to Restriction Requirement dated Jan. 11, 2010 for U.S. Appl. No. 11/893,183; 1 page. |
| Office Action dated Feb. 26, 2010 for U.S. Appl. No. 11/693,183; 8 pages. |
| Response to Office Action dated Jun. 9, 2010 for U.S. Appl. No. 11/693,183; 6 pages. |
| Notice of Aiiowance dated Aug. 26, 2010 for U.S. Appl. No. 11/693,183; 7 pages. |
| Office Action dated Jan. 4, 2012 for U.S. Appl. No. 12/878,134; 9 pages. |
| Response to Office Action dated Jan. 16, 2012 for U.S. Appl. No. 12/678,134; 6 pages. |
| Notice of Ailowance dated Feb. 3, 2012 for U.S. Appl. No. 12/878,134: 7 pages. |
| Office Action dated Jul. 21, 2011 for U.S. Appl. No. 12/360,889; 8 pages. |
| Response to Office Action dated Oct. 21, 2011 for U.S. Appl. No. 12/360,889; 10 pages. |
| Final Office Action dated Jan. 17, 2012 for U.S. Appl. No. 12/360,889; 9 pages. |
| Request for Continued Examination and Response to Office Action dated May 17, 2012 for U.S. Appl. No. 12/360,889; 14 pages. |
| Office Action dated Jun. 7, 2012 for U.S. Appl. No. 12/380,889 8 pages. |
| Office Action dated Jan. 18, 2013 for U.S. Appl. No. 12/300,889; 6 pages. |
| Response to Office Action dated Apr. 15, 2013 for U.S. Appl. No. 12/360,889; 6 pages. |
| Response to Office Action dated Sep. 27, 2013 for U.S. Appl. No. 12/380,889, 15 pages. |
| Final Office Action dated Mar. 11, 2014 for U.S. Appl. No. 12/360,889; 10 pages. |
| Response to Final Office Action dated Jun. 23, 2014 for U.S. Appl. No. 12/360,889; 11 pages. |
| Request for Continueed Examination dated Jul. 21, 2014 for U.S. Appl. No. 12/360,889; 3 pages. |
| Office Action dated Aug. 4, 2014 for U.S. Appl. No. 12/360,889; 8 pages. |
| Restriction Requirement dated Oct. 23, 2009 for U.S. Appl. No. 12/328,798; 7 pages. |
| Response to Restriction Requirement dated Nov. 3, 2009 for U.S. Appl. No. 12/328,798; 1 page. |
| Office Action dated Dec. 14, 2009 for U.S. Appl. No. 12/328,798; 15 pages. |
| Response to Office Action dated Jan. 27, 2010 for U.S. Appl. No. 12/328,798; 22 pages. |
| Final Office Action dated May 24, 2010 for U.S. Appl. No. 12/328,798; 20 pages. |
| Response to Final Office Action dated Jul. 28, 2010 for U.S. Appl. No. 12/328,798; 23 pages. |
| Request for Continued Examination and Information Disclosure Statement dated Aug. 9, 2010 for U.S. Appl. No. 12/328,798; 3 page. |
| Office Action dated Oct. 31, 2011 for U.S. Appl. No. 12/328,798; 13 pages. |
| Response to Office Action dated Feb. 28, 2012 for U.S. Appl. No. 12/328,798; 15 pages. |
| Final Office Action dated May 10, 2012 for U.S. Appl. No. 12/328,798; 13 pages. |
| Response to Final Office Action dated Oct. 9, 2012 for U.S. Appl. No. 12/328,798; 6 pages. |
| Notice of Allowance dated Oct. 26, 2012 for U.S. Appl. No. 12/328,798; 10 pages. |
| Request for Continued Examination and Information Disclosure Statement dated Jan. 24, 2013 for U.S. Appl. No. 12/328,798; 6 pages. |
| Notice of Allowance dated Mar. 1, 2013 for U.S. Appl. No. 12/328,798; 7 pages. |
| Preliminary Amendment dated Sep. 22, 2011 for U.S. Appl. No. 13/241,380; 8 pages. |
| Office Action dated Feb. 22, 2012 for U.S. Appl. No. 13/241,380; 13 pages. |
| Response to Office Action dated May 2, 2012 for U.S. Appl. No. 13/241,380; 16 pages. |
| Final Office Action dated Jul. 19, 2012 for U.S. Appl. No. 13/241,380; 13 pages. |
| Response to Final Office Action dated Oct. 9, 2012 for U.S. Appl. No. 13/241,360; 6 pages. |
| Notice of Allowance dated Oct. 29, 2012 for U.S. Appl. No. 13/241,380, 9 pages. |
| Request for Continued Examination and Information Disclosure Statement dated Jan. 24, 2013 for U.S. Appl. No. 13/241,380; 5 pages. |
| Notice of Allowance dated Feb. 21, 2013 for U.S. Appl. No. 13/241,380; 7 pages. |
| English translation of Japanese Office Action dated Jul. 26, 2012; for Japanese Patent Application No. 2010-501028; 5 pages. |
| Japanese Response to Office Action; dated Oct. 16, 2012 for Japanese Patent Application No. 2010-501028; 12 pages. |
| Request for Continued Examination, Response to Office Action and IDS dated Sep. 17, 2015 for U.S. Appl. No. 13/838,131; 18 pages. |
| Restriction Requirement dated Jul. 15, 2014 for U.S. Appl. No. 14/090,037; 7 pages. |
| Amendment dated Dec. 16, 2014 for U.S. Appl. No. 14/090,037; 9 pages. |
| Office Action dated May 6, 2016 for U.S. Appl. No. 13/424,618, 15 pages. |
| Notice of Allowance dated May 9, 2016 for U.S. Appl. No, 13/871,131, 9 pages. |
| Response to Written Opinion dated Jun. 10, 2016 for European Application No. 14717654.9, 20 pages. |
| Response dated Jun. 20, 2016 to Final Office Action dated Apr. 22, 2016; For U.S. Appl. No. 13/838,131; 13 pages. |
| Applicant-Initiated interview Summary dated Jul. 27, 2016 for U.S. Appl. No. 13/424,618; 5 pages. |
| Request for Continued Examination (RCE), Letter Requesting Non-Entry of Previously Filed Amendment, and Response to Final Office Action dated Apr. 22, 2016 corresponding to U.S. Appl. No. 13/838,131; Response filed on Aug. 16, 2016; 17 Pages. |
| Request for Continued Examination and Amendment filed on Aug. 24, 2016 for U.S. Appl. No. 13/788,210; 15 pages. |
| Chinese Response to Office Action with English claims dated Aug. 9, 2016 for Chinese Application No. 201330014780.9; 15 pages. |
| Japanese Office Action with English Translation and claims dated Jul. 25, 2016 for Japanese Application No. 2015-501720; 13 pages. |
| European Office Action dated Aug. 10, 2016 for European Application No. 14717654.9; 20 pages. |
| Koninklijke Philips Electronics Product data sheet KMA200 “Programmable angle sensor” Aug. 16, 2005, 31 pages. |
| Request for Continued Examination and Amendment filed on Aug. 31, 2016 for U.S. Appl. No. 13/749,776; 21 pages. |
| European Office Action dated Aug. 10, 2016 for European Application No. 13710112.7; 29 pages. |
| Amendment filed on Sep. 1, 2016 for U.S. Appl. No. 13/424,618; 15 pages. |
| English translation of Japanese Office Action dated Aug. 7, 2013 for Japanese Application No. 2010-501028; 3 pages. |
| Response to Japanese Office Action with English translation of claims filed on Sep. 10, 2013 for Japanese Application No. 2010-501028; 10 pages. |
| Search Report and Written Opinion dated Apr. 24, 2013 for PCT Application No. PCT/US2012/068912; 15 pages. |
| Demand for International Preliminary Examination filed Nov. 6, 2013 for PCT Application No. PCT/US2012/068912: 15 pages. |
| EPO Notification concerning informal communications with the applicant dated Jan. 3, 2014 for PCT Application No. PCT/US2012/068912; 23 pages. |
| Response to EPO Communication filed Mar. 3, 2014 for PCT Application No. PCT/US2012/068912; 9 pages. |
| International Preliminary Report on Patentability dated Apr. 8, 2014 for PCT Application No. PCT/US2012/068912; 22 pages. |
| Japanese Office Action with English translation dated Aug. 15, 2016 for Japanese Application No. 2015-501676; 6 pages. |
| Office Action dated Sep. 19, 2016 for U.S. Appl. No. 13/788,210; 16 pages. |
| Office Action dated Sep. 20, 2016 for U.S. Appl. No. 13/838,131; 14 pages. |
| Response to Chinese Office Action with English Translation of claims filed Sep. 18, 2016 for Chinese Application No. 201380026117.0; 9 pages. |
| Terminal Disclaimer filed Sep. 9, 2016 for U.S. Appl. No. 13/749,776; 2 pages. |
| Notice of Alloweance dated Sep. 15, 2016 for U.S. Appl. No. 13/749,776; 10 pages. |
| Non-Final Office Action dated Oct. 19, 2016; for U.S. Appl. No. 15/049,732; 30 pages. |
| Response to Japanese Office Action dated Oct. 8, 2016: Letter to Yuasa and Hera dated Sep. 26, 2016 and pending claims for Japanese Application No. 2015-501720; 22 pages. |
| Response to Office Action dated Oct. 19, 2016 from U.S. Appl. No. 15/049,732 as filed on Nov. 8, 2016; 8 Pages. |
| Final Office Action dated Nov. 30, 2016 for U.S. Appl. No. 13/424,618, 20 pages. |
| Response to Japanese Office Action filed on Nov. 15, 2016 with pending claims and letter to Yuasa and Hara dated Oct. 7, 2016 for Japanese Application No. 2015-501676; 14 pages. |
| Notice of Allowance dated Dec. 2, 2016 for U.S. Appl. No. 15/049,732; 5 pages. |
| Response to official communication filed Dec. 7, 2016 for European Application No. 14717654.9; 15 pages. |
| Response to official communication filed Dec. 8, 2016 for European Application No. 13710112,7; 13 pages. |
| Amendment dated Dec. 14, 2016 for U.S. Appl. No. 13/788,210; 11 pages. |
| Response to Office Action dated Dec. 19, 2016 for U.S. Appl. No. 13/838,131; 11 pages. |
| Chinese Office Action with English translation and pending Claims dated Dec. 12, 2016 for Chinese Application No. 201380026117.0; 24 pages. |
| Response to Office Action dated Jan. 19, 2017 for U.S. Appl. No. 13/424,618, 17 pages. |
| Chinese Office Action with Engiish translation and pending claims dated Dec. 13, 2016 for Chinese Application No. 201380014780.9; 21 pages. |
| Letter to NTD Patent & Trade Mark Agency Ltd. dated Feb. 10, 2017 and Claim amendments for Chinese Application No. 201380014780.9; 9 pages. |
| Letter to NTD Patent & Trade Mark Agency Ltd. dated Feb. 13, 2017 and Claim amendments for Chinese Application No. 201380026117.0; 5 pages. |
| Final Office Action dated Feb. 22, 2017 for U.S. Appl. No. 13/838,131; 15 pages. |
| German Response (with English Translation) dated Feb. 28, 2017 for German Application No. 112008000759.4; 21 Pages. |
| Pretrial Report with English translation dated Jan. 20, 2017 for Japanese Application No. 2015-501676; 5 pages. |
| Letter to Yuasa and Hara in response to Pretrial Report dated Mar. 6, 2017 and Claim amendments for Japanese Application No. 2015-501676; 7 pages. |
| Notice of Allowance dated Mar. 21, 2017 for U.S. Appl. No. 13/788,210; 8 pages. |
| Japanese Office Action dated Mar. 9, 2017 and English translation for Japanese Application No. 2016-084148; 13 pages. |
| Letter to Yuasa and Hara dated Mar. 6; 2017 and amended claims for Japanese Application No, 2015-501676; 7 pages. |
| Petition dated Apr. 11, 2017 for Japanese Application No. 2015-501676; 7 pages. |
| Japanese Office Action dated Mar. 15, 2017 English translation for Japanese Application No. 2015-501720; 8 pages. |
| Office Action dated Apr. 18, 2017 for U.S. Appl. No. 13/424,618; 19 pages. |
| Amendment in response to Final Office Action dated Feb. 22, 2017 and filed May 2, 2017 for U.S. Appl. No. 13/838,131; 12 pages. |
| Request for Continued Examination filed on May 16, 2017 for U.S. Appl. No. 13/830,131; 3 pages. |
| Response to Final Office Action filed on May 2, 2017 for U.S. Appl. No. 13/838,131; 12 pages. |
| Office Action dated Jun. 8, 2017 for U.S. Appl. No. 13/838,131; 16 pages. |
| Japanese Notice of Allowance with English Allowed claims dated Jun. 26, 2017 for Japanese Application No. 2015-501676; 20 pages. |
| Chinese Office Action with English translation dated Jun. 2, 2017 for Chinese Application No. 201380026117.0, 20 pages. |
| Notice of Allowance dated May 31, 2017 for U.S. Appl. No. 13/748,999; 11 pages. |
| Response to Office Action filed on Jun. 21, 2017 for U.S. Appl. No. 13/424,618; 13 pages. |
| Response to Japanese Office Action with English claims dated Jul. 11, 2017 for Japanese Application No. 2015-501720, 18 pages. |
| Response to Chinese Office Action with English claims dated Jul. 17, 2017 for Chinese Application No. 201380026117.0; 11 pages. |
| Response to Chinese Office Action with English translation filed on Sep. 19, 2017 for Chinese Application No. 201380014780.9; 14 pages. |
| Office Action dated Oct. 10, 2017 for U.S. Appl. No. 13/424,618; 15 pages. |
| Japanese Pre-Trial report with English translation dated Sep. 19, 2017 for Japanese Application No. 2015-501720, 8 pages. |
| Office Action dated Oct. 10, 2017 for U.S. Appl. No. 15/447,320; 7 pages. |
| Japanese Office Action with English translation dated Oct. 6, 2017 for Japanese Application No. 2016-510681; 18 pages. |
| Response to Office Action dated Nov. 21, 2017 for U.S. Appl. No. 13/424,618; 14 pages. |
| Japanese Notice of Allowance with English allowed claims dated Nov. 27, 2017 for Japanese Application No. 2016-084148; 10 pages. |
| Japanese Petition in Response to Pretrial Report with Letter to Yuasa and Hara and English claims dated Nov. 17, 2017 for Japanese Application No. 2015-501720; 15 pages. |
| Examination Report dated Dec. 11, 2017 for European Application No. 12809921.5; 7 pages. |
| Japanese Response to Office Action with English translation dated Dec. 27, 2017 for Japanese Application No. 2016-510681; 15 pages. |
| Office Action dated Dec. 15, 2017 for U.S. Appl. No. 13/424,618; 18 pages. |
| Response to Office Action dated Jan. 8, 2018 for U.S. Appl. No. 15/447,320; 6 Pages. |
| Chinese Notice of Allowance (with English Translation and Allowed Claims in English) dated Apr. 4, 2018 for Chinese Application No. CN 201380014780.9; 10 Pages. |
| Japanese Notice of Allowance (with Allowed Claims in English) dated Apr. 6, 2018 for Japanese Application No. JP 2015-501720; 18 Pages. |
| Japanese Notice of Allowance (with Allowed Claims in English) dated Apr. 3, 2018 for Japanese Application No. JP 2016-510681; 7 Pages. |
| Response to Office Action with Request for Continued Examination dated May 31, 2018 for U.S. Appl. No. 13/424,618; 17 pages. |
| Office Action dated Jun. 12, 2018 for U.S. Appl. No. 15/447,320; 11 pages. |
| Response to Office Action dated Aug. 9, 2017 for U.S. Appl. No. 13/838,131; 13 pages. |
| Response (with Amended Claims) to European Examination Report dated Dec. 11, 2017 for European Application No. 12809921.5; Response filed Jun. 21, 2018; 9 Pages. |
| Chinese Notice of Allowance with English translation dated Sep. 6, 2017 for Chinese Application No. 201380026117.0; 8 pages. |
| Notice of Allowance dated Oct. 3, 2018, for U.S. Appl. No. 13/424,618; 10 Pages. |
| Office Action dated Jul. 31, 2018 for Korean Application No. 10-2014-7028660 with English Translations; 28 Pages. |
| Korean Office Action with English translation dated Oct. 29, 2018 for Korean Application No. 10-2014-7028350; 34 pages. |
| Response to Korean Office Action dated Sep. 28, 2018 with English bibliographic page for Korean Application No. 10-2014-7028660; 72 pages. |
| European Examination Report dated Aug. 23, 2018 for European Application No. 13712040.8; 8 pages. |
| Response to Office Action dated Sep. 26, 2018 for U.S. Appl. No. 15/447,320; 9 pages. |
| Number | Date | Country | |
|---|---|---|---|
| 20170278981 A1 | Sep 2017 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 13748999 | Jan 2013 | US |
| Child | 15618251 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 13424618 | Mar 2012 | US |
| Child | 13748999 | US |
