controllable by variation of the magnetic field applied to the device

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/82controllable by variation of the magnetic field applied to the device

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 12,096,696
- Issue date Sep 17, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong Jin
- G11 - INFORMATION STORAGE
Information Patent Grant
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- Issue date Sep 17, 2024
- TDK Corporation
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Information Patent Grant
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Information Patent Grant
Integrated circuit package with magnet having a channel
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- TOHOKU UNIVERSITY
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Information Patent Grant
Device for storing controlling and manipulating quantum information...
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- Issue date Apr 9, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
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Information Patent Grant
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- Issue date Apr 9, 2024
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- B82 - NANO-TECHNOLOGY
Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
Magnetic domain wall displacement element, magnetic recording array...
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Information Patent Grant
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Information Patent Grant
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Information Patent Grant
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- ALLEGRO MICROSYSTEMS, LLC
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum well stacks for quantum dot devices
- Patent number 11,677,017
- Issue date Jun 13, 2023
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum dot devices
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- Issue date May 30, 2023
- Intel Corporation
- Hubert C. George
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin current magnetization rotational element
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- Issue date Apr 25, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Quantum dot devices with passive barrier elements in a quantum well...
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- Issue date Mar 28, 2023
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Information Patent Grant
Spin current magnetization rotational element
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- Issue date Mar 21, 2023
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- Issue date Mar 7, 2023
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- Issue date Feb 28, 2023
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Information Patent Grant
CMP stop layer and sacrifice layer for high yield small size MRAM d...
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- Issue date Jan 3, 2023
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- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with embedded magnetic storage structure and m...
- Patent number 11,545,523
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- NANYA TECHNOLOGY CORPORATION
- Chang-Chieh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatically controlled gallium nitride based sensor and metho...
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- Yakov Roizin
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Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,508,904
- Issue date Nov 22, 2022
- United Microelectronics Corp.
- Hui-Lin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dot devices
- Patent number 11,482,614
- Issue date Oct 25, 2022
- Intel Corporation
- Ravi Pillarisetty
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
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- Ingvild HANSEN
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...
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- G11 - INFORMATION STORAGE
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- Publication number 20240260481
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- UNITED MICROELECTRONICS CORP.
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- G11 - INFORMATION STORAGE
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MAGNETIC FIELD SENSOR INTEGRATED CIRCUIT WITH INTEGRAL FERROMAGNETI...
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MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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- Hui-Lin Wang
- G11 - INFORMATION STORAGE
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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INTEGRATED CIRCUIT PACKAGE WITH MAGNET HAVING A CHANNEL
- Publication number 20230261118
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- ALLEGRO MICROSYSTEMS, LLC
- Ravi Vig
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MAGNETORESISTANCE EFFECT ELEMENT
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- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
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MAGNETIC MEMORY DEVICE
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- Yongjae LEE
- G11 - INFORMATION STORAGE
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MAGNETORESISTIVE EFFECT ELEMENT
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- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
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Hall Effect Prism Sensor
- Publication number 20230110624
- Publication date Apr 13, 2023
- Lexmark International, Inc.
- John Douglas Anderson
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Hall Effect Prism Sensor
- Publication number 20230114075
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- Lexmark International, Inc.
- John Douglas Anderson
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DEVICE FOR STORING CONTROLLING AND MANIPULATING QUANTUM INFORMATION...
- Publication number 20230037618
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- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Hélène JACQUINOT
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230038528
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- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
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Information Patent Application
MAGNETOELECTRIC SPIN ORBIT LOGIC TRANSISTOR WITH A SPIN FILTER
- Publication number 20220352358
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- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
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SYSTEMS, DEVICES, AND METHODS TO INTERACT WITH QUANTUM INFORMATION...
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- PHOTONIC INC.
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SENSOR INTEGRATED CIRCUIT WITH INTEGRATED COIL
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SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT
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SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EF...
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QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS
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SEMICONDUCTOR DEVICE WITH EMBEDDED MAGNETIC STORAGE STRUCTURE AND M...
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- NANYA TECHNOLOGY CORPORATION
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MAGNETIC DOMAIN WALL DISPLACEMENT ELEMENT, MAGNETIC RECORDING ARRAY...
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- TDK Corporation
- Shogo YAMADA
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QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES
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- Intel Corporation
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SPIN-CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFE...
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- Yohei SHIOKAWA
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MAGNETORESISTANCE EFFECT ELEMENT
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- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
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QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES
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- Intel Corporation
- Nicole K. Thomas
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SEMICONDUCTOR DEVICE WITH EMBEDDED MAGNETIC STORAGE STRUCTURE AND M...
- Publication number 20210313395
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- NANYA TECHNOLOGY CORPORATION
- Chang-Chieh LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20210305500
- Publication date Sep 30, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong JIN
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN TRANSISTORS BASED ON VOLTAGE-CONTROLLED MAGNON TRANSPORT IN MU...
- Publication number 20210280772
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- Wisconsin Alumni Research Foundation
- Chang-Beom EOM
- H01 - BASIC ELECTRIC ELEMENTS

controllable by variation of the magnetic field applied to the device

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure and fabrication method thereof

Magnetoresistive effect element

Semiconductor structure and fabrication method thereof

Integrated circuit package with magnet having a channel

Magnetic tunnel junction device, method for manufacturing magnetic...

Device for storing controlling and manipulating quantum information...

Semiconductor device and method for fabricating the same

Quantum dot devices with overlapping gates

Minimal thickness synthetic antiferromagnetic (SAF) structure with...

Domain wall moving element, domain wall moving type magnetic record...

Magnetoresistance effect element

Semiconductor device and method for fabricating the same

Magnetic domain wall displacement element, magnetic recording array...

Gate walls for quantum dot devices

Quantum well stacks for quantum dot devices

Quantum dot devices

Sensor integrated circuit with integrated coil and element in centr...

Quantum well stacks for quantum dot devices

Quantum dot devices

Spin current magnetization rotational element

Quantum dot devices with passive barrier elements in a quantum well...

Spin current magnetization rotational element

Magnetoresistance effect element

Quantum dot array devices

Memory element, memory apparatus

CMP stop layer and sacrifice layer for high yield small size MRAM d...

Semiconductor device with embedded magnetic storage structure and m...

Electrostatically controlled gallium nitride based sensor and metho...

Semiconductor device and method for fabricating the same

Quantum dot devices

Patents Applicationslast 30 patents

SYSTEM AND METHOD FOR CONTROLLING QUANTUM PROCESSING ELEMENTS

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, SPIN CURRENT MAGNETI...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETIC FIELD SENSOR INTEGRATED CIRCUIT WITH INTEGRAL FERROMAGNETI...

MAGNETIZATION ROTATIONAL ELEMENT AND MAGNETORESISTIVE EFFECT ELEMENT

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INTEGRATED CIRCUIT PACKAGE WITH MAGNET HAVING A CHANNEL

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETIC MEMORY DEVICE

MAGNETORESISTIVE EFFECT ELEMENT

Hall Effect Prism Sensor

Hall Effect Prism Sensor

DEVICE FOR STORING CONTROLLING AND MANIPULATING QUANTUM INFORMATION...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETOELECTRIC SPIN ORBIT LOGIC TRANSISTOR WITH A SPIN FILTER

SYSTEMS, DEVICES, AND METHODS TO INTERACT WITH QUANTUM INFORMATION...

SENSOR INTEGRATED CIRCUIT WITH INTEGRATED COIL

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EF...

QUANTUM DOT DEVICES WITH SINGLE ELECTRON TRANSISTOR DETECTORS

SEMICONDUCTOR DEVICE WITH EMBEDDED MAGNETIC STORAGE STRUCTURE AND M...

MAGNETIC DOMAIN WALL DISPLACEMENT ELEMENT, MAGNETIC RECORDING ARRAY...

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

SPIN-CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFE...

MAGNETORESISTANCE EFFECT ELEMENT

QUANTUM WELL STACKS FOR QUANTUM DOT DEVICES

SEMICONDUCTOR DEVICE WITH EMBEDDED MAGNETIC STORAGE STRUCTURE AND M...

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

SPIN TRANSISTORS BASED ON VOLTAGE-CONTROLLED MAGNON TRANSPORT IN MU...