Patent Application
20110233058
1. Field of the Invention
The present invention relates to a magnetron plasma sputtering apparatus and, more particularly, to a magnetron plasma sputtering apparatus that proceeds with plasma sputtering through magnetic control.
2. Description of the Related Art
A magnetron plasma sputtering apparatus generally affects charged particles with a magnetic field to effectively impact a target. The atoms on a surface of the target exchange with kinetic energy with the high-energy charged particles to generate ion sputtering. The ions flying away from the target results in the impact deposit on a substrate to form a film.
The magnetron device 92 is located adjacent to the engaging portion 912 and creates a magnetic field to control ion sputtering of the target 7. The magnetron device 92 includes a primary magnet 921, an outer, annular magnet 922, and a yoke iron 923. The primary magnet 921 is mounted on an engagement face of the yoke iron 923. The annular magnet 922 is mounted around the primary magnet 921 and also mounted on the engagement face of the yoke iron 923. With reference to
However, some of the ions may not be able to reach the substrate 8 and shift from the sputtering path due to insufficient momentum. The sputtering operation on the substrate 8 cannot be achieved, resulting in low yield of the magnetron plasma sputtering apparatus 9. Improvement on the magnetron plasma sputtering apparatus 9 is thus required.
The primary objective of the present invention is to provide a magnetron plasma sputtering apparatus that includes a guiding coil between a target and a substrate to enhance the overall sputtering effect of the magnetron plasma sputtering apparatus.
A magnetron plasma sputtering apparatus according to the present invention includes a sputtering chamber having a loading portion and an engaging portion opposite to the loading portion. A substrate is adapted to be mounted to the loading portion. A target is adapted to be mounted to the engaging portion. A sputtering space is defined between the loading portion and the engaging portion. A reference line extends through the loading portion, the sputtering space, and the engaging portion in sequence. A guiding coil surrounds the sputtering space with the reference line located in the center. A magnetron device is located at a side of the sputtering chamber adjacent to the engaging portion. The magnetron device has a magnetization side facing the engaging portion.
The present invention will become clearer in light of the following detailed description of illustrative embodiments of this invention described in connection with the drawings.
The illustrative embodiments may best be described by reference to the accompanying drawings where:
All figures are drawn for ease of explanation of the basic teachings of the present invention only; the extensions of the figures with respect to number, position, relationship, and dimensions of the parts to form the preferred embodiments will be explained or will be within the skill of the art after the following teachings of the present invention have been read and understood. Further, the exact dimensions and dimensional proportions conforming to specific force, weight, strength, and similar requirements will likewise be within the skill of the art after the following teachings of the present invention have been read and understood.
Where used in the various figures of the drawings, the same numerals designate the same or similar parts. Furthermore, when the terms “first”, “second”, “side”, “portion”, “annular”, “width”, and similar terms are used herein, it should be understood that these terms refer only to the structure shown in the drawings as it would appear to a person viewing the drawings and are utilized only to facilitate describing the invention.
A magnetron plasma sputtering apparatus 1 of a preferred embodiment according to the present invention is shown in
The guiding coil 12 is mounted around the reference line R with the reference line R in the center. The guiding coil 12 surrounds the sputtering space S. Specifically, the guiding coil 12 is mounted to the loading portion 111 and surrounds the anode plate 114 and the sputtering space S, as shown in
The guiding coil 12 includes an input connected to an external power source such that the guiding coil 12 can be energized by the external power source to create magnetic lines of force. The direction of the magnetic lines of force is identical to the direction of ion sputtering from the target 6 to the substrate 5. By such an arrangement, the ions flying away from the target 6 can stably move to the substrate 5 for sputtering operation under the guidance of the guiding coil 12.
Preferably, the sputtering chamber 11 is not magnetically conductive to avoid adverse effect on the function of the guiding coil 12.
Still referring to
The yoke iron 131 is located on the magnetization side of the magnetron device 13 and includes a loading face 1311. The primary magnetic control member 132 is mounted on the loading face 1311 of the yoke iron 131. The primary magnetic control member 132 includes a permanent magnet 1321 and an electromagnetic coil 1322. The permanent magnet 1321 includes an engaging face for engaging with the loading face 1311. Thus, the permanent magnet 1321 can be mounted to the loading face 1311 with the permanent magnet 1321 located in a center of the loading face 1311. The permanent magnet 1321 further includes a magnetization face opposite to the engaging face. The magnetization face of the permanent magnet 1321 faces the target 6, providing a suitable electromagnetic field for the target 6 during ion sputtering. The electromagnetic coil 1322 is mounted around the permanent magnet 1321 and includes an input electrically connected to an external power source. The primary magnetic control member 132 can be controlled to increase or decrease the magnetization effect through control of the external power source.
The annular magnetic control member 133 is also mounted to the loading face 1311 of the yoke iron 131 and surrounds the primary magnetic control member 132. The annular magnetic control member 133 includes an annular magnet 1331 and an annular electromagnetic coil 1332. The annular magnet 1331 includes an engaging face engaged with the loading face 1311 of the yoke iron 131. The annular magnet 1331 further includes a magnetization face opposite to the engaging face of the annular magnet 1331 and facing the target 6. The annular electromagnetic coil 1332 is mounted around the annular magnet 1331. A wire winding direction of the annular electromagnetic coil 1332 is the same as that of the guiding coil 12. The annular electromagnetic coil 1332 includes an input electrically connected to an external power source to control the magnetron device 13 for controlling the magnetic flux in the first direction Z such that the magnetic flux is zero in a position where the target 6 has the deepest etching depth.
Still referring to
The magnetron device 13 of the preferred embodiment of the present invention further includes an annular iron ring 135 mounted to, and in intimate contact with, a surface of the target 6 facing the substrate 5. Alternatively, the annular iron ring 135 can be mounted to the other surface of the target facing the magnetization face of the permanent magnet 1321. The iron ring 135 is electromagnetically conductive to guide the magnetic flux of the permanent magnet 1321 and the annular magnet 1331 to flow in the second direction Y to the surface of the target 6, further increasing the etching width of the target 6.
Conclusively, the overall sputtering effect of the magnetron plasma sputtering apparatus 1 according to the present invention is enhanced by the guiding coil 12.
Thus since the invention disclosed herein may be embodied in other specific forms without departing from the spirit or general characteristics thereof, some of which forms have been indicated, the embodiments described herein are to be considered in all respects illustrative and not restrictive. The scope of the invention is to be indicated by the appended claims, rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are intended to be embraced therein.
| Number | Date | Country | Kind |
|---|---|---|---|
| 099109191 | Mar 2010 | TW | national |
