The invention relates to a media injector according to the preamble of Claim 1 and a plasma source and sputtering device according to the preambles of Claim 27 and 35.
A generic media injector is used to transport a fluid medium, preferably a gas, a liquid, vapors or solutions, suspensions, emulsions, colloids, pastes, smoke or the like into a processing chamber, preferably in conjunction with technical utilization of plasmas, and is already known in different variants, only some of which are mentioned below. A gas nozzle is known from DE 39 351 89 A1, with which the process gas mixture can be admitted through a number of openings into a reaction chamber of an apparatus for treatment of work pieces by reactive ion etching. A sputtering device for coating of substances is known from DE 43 011 89 C2 with two electrodes and a shield for the electrodes. A substrate support can be moved parallel to the surface of the two electrodes. A gas line, through which process gases are introduced to the plasma chamber of the apparatus, is arranged in the dark space shield and beneath the surface of one of the electrodes. In order to counteract entrainment of plasma and the formation of parasitic plasmas, the distance from the electrode to the dark space shield is less than the dark space distance. A magnetron sputtering electrode with an anode and cathode shield is known from U.S. Pat. No. 6,171,461 B1. The cathode shield is enclosed by the anode shield. Process gas is introduced via a gas inlet in the area between the anode shield and the cathode shield, which can flow over the surface of the sputtering target.
A device for reactive coating of substrates according to the magnetron principle is described in WO 96/26533, whose target consists of at least two galvanically separated partial targets. The partial targets are concentrically arranged and form a so-called two-ring source. Annular intermediate pieces are arranged concentrically in the center of the internal partial target and between the partial targets. A channel is introduced into the intermediate pieces, into which reaction gas is supplied via lines. This emerges from nozzles distributed around the periphery, so that it propagates over the partial targets. A film formation chamber of a film formation device is described in DE 199 4 039 A1, in which a mixed gas, comprising a sputtering gas and a reactive gas, is fed to the film formation chamber through a gas inlet opening. A microwave plasma burner with a coaxially designed gas feed is known from EP 0 296 921 B1. A coating device for substrates is shown in EP 0 463 230 B1, in which a device for generation of a plasma cloud is provided, which has an electron emitter with a tubular anode connected afterward. The anode is provided with an inlet for the process, which is designed as a gas nozzle. For use in a reactor to treat a surface of a substrate, a reactor with a nozzle head is proposed in EP 0 709 486 B1, which has a planar arrangement of openings arranged at limited spacing, through which a gas can be sprayed into the treatment chamber of the reactor for deposition on the wafer. US 2002/0096258 A1 also describes a plasma reactor, which exhibits isotropic etching of a substrate with a centrally arranged gas inlet to achieve the most uniform possible plasma potential.
It is already known from DE-OS 2 149 606 and US 2002/0108571 A1 to provide a gas inlet in the interior of a shield. A glow discharge apparatus for deposition of semiconductor layers with a cathode and a cathode shield is also disclosed in U.S. Pat. No. 4,574,733. A process gas can be introduced into the region of the cathode by means of a process gas feed with gas nozzles. A gas line provided with holes to supply gas to a plasma reactor is already known from U.S. Pat. No. 5,811,022, which surrounds a semiconductor wafer being processed. A perforated shield is known from U.S. Pat. No. 6,296,747 B1 to produce a sputtering reactor with a gas inlet with high conduction value, which contains a number of holes, through which the process gas can flow. For improvement of plasma distribution in an inductively coupled plasma, it is proposed in WO 02/19364 to use shields with slits and holes for gas inlet and gas distribution in a process chamber.
A device for uniform distribution of a gas concentration within a process chamber with a porous ceramic tube is described in WO 95/620652. A gas injection system for injection of one or more process gases into a reaction chamber is disclosed in EP 0 823 491 B1 with one or more slits and holes in one part of the bottom surface in a side wall.
The task of the present invention is to devise a media injector for transport of an especially fluid medium into a processing chamber, which has a simple and, at the same time, stable design and can be implemented cost-effectively. Another task is to devise a plasma and/or ion device, for example, a plasma, ion or sputtering source, with a media inlet device designed as a media injector, which has a simple and, at the same time, stable design and is cost-effective to implement.
The mentioned tasks are solved according to the invention with the features of the independent patent claims. Modifications can be deduced from the dependent claims.
A media injector according to the invention for transport of an especially fluid medium into a processing chamber preferably contains at least one feed device and at least one gap as transport opening for the medium. The gap has at least two gap limitation surfaces with a gap space arranged in between, at least one gap limitation surface being formed by at least part of at least one face of a first tubular element.
The invention starts from the finding that tubular parts, whose faces form a gap limitation surface, have high stability and can be produced cost-effectively with high accuracy, for example, by turning. The media injector according to the invention also permits more uniform gas distribution, than, say, holes, nozzles or openings by creating a high-precision gap as transport opening. A spatial area, in which a medium can be transported through the gap, regardless of whether additional physical or chemical processes occur, is referred to as processing chamber according to the invention.
In a generic media injector, in addition to its design, additional parameters, like the distribution of medium in the feed and processing chamber to be achieved with it, its positioning in the processing chamber, as well as its mechanical, thermal and chemical stability relative to the medium, are significant. A generic media injector can be used, in order to obtain layered flow distributions without chemical or physical reactions. When a generic media injector is used in the field of plasma technology, the effect of parameters, like ion flow, formation of activated species, arcing and dark spaces, as well as pressure and potential distributions in the plasma, must be allowed for by appropriately configuring the media injector. During use in plasmas, it is advantageous if it has sufficient plasma resistance with a view toward longer lifetime of the media injector.
The media injector is preferably designed as a gas nozzle in gaseous media.
The preferably provided feed device can expediently be designed as a feed line. In another variant, an internal processing chamber can be arranged in a supply chamber of the medium and the medium can flow into the processing chamber through the media injector.
When the media injector is designed so that a second gap limitation surface opposite the first gap limitation surface is formed by at least part of one face of a second tubular element, the gap space can be cost-effectively dimensioned with high accuracy by simple positioning of the faces of the first and second tubular element.
In a modification of the invention, however, the second gap limitation surface opposite the first gap limitation surface can be formed by a surface of a non-tubular work piece, so that a combination of gap limitation surfaces is achieved with available components that are integrated into an overall function.
In another variant of the media injector, the gap is part of an electrode arrangement, through which a media inlet becomes possible near an area, in which the electric and/or magnetic fields are active in the processing chamber.
A conductor, preferably a metal, especially steel, stainless steel, titanium, aluminum, copper, tantalum, tungsten, molybdenum, graphite, a semiconductor or insulator, preferably made of ceramic or plastic, is expediently provided as material for elements, components or work pieces. It is then understood that both different and individual elements can consist of different materials.
If a media injector according to the invention is prescribed to supply the medium into a processing chamber of a plasma device, a stable process-optimized feed of the medium can be achieved with it. A gap, which is assigned to a Faraday dark space of the plasma, which can be used as an area for introduction of the medium, is advantageous. The Faraday dark space is not intended for active isolation between adjacent components, but necessary, so that no parasitic plasma can ignite between two components with at least temporarily different potential, which then generally produces a conducting connection.
A plasma and/or ion device according to the invention has a media injector according to the invention.
A plasma source with at least one gas inlet device for ionizable gas to generate a plasma and at least one cathode for generation of electrons for ionization of the gas, as well as at least one anode allocated to the cathode, is preferred. At least one gas inlet device is designed as a media injector according to the invention. It is understood that the media injector can also be used in plasma sources without electrodes and in plasma sources with one or more electrodes without electron emitter (for example, inductively coupled sources).
This type of plasma source therefore has a gas inlet device that can be operated with high stability and produced cost-effectively.
A sputtering device according to the invention for coating of substrates has at least one gas inlet device for the sputtering and/or reactive gas and a sputtering cathode, which includes at least one sputtering target with a sputtering surface. At least one gas inlet device is designed as a media injector according to the invention.
Precise and cost-effective influencing of the operating and processing parameters is possible in a plasma source or sputtering device according to the invention via the media injector design according to the invention.
Additional variants, advantages and aspects of the invention are explained below, independently of their summary in the patent claims, schematically with reference to the drawings, without restriction of generality.
In the drawings:
The same reference numbers are used below for the same components in the different figures. A media injector for gas feed into an enclosed spatial area, designed as an annular nozzle known from the prior art, is shown in
As shown more precisely in a section in
Relative to a slotted tube, the media injector according to the invention has higher stability, especially long-term and process stability, since possible spacing changes of the gap limitation surfaces caused by external mechanical forces or heat expansion forces can be reduced. The distance between the gap limitation surfaces can be precisely defined by simple spacers and stabilized relative to external effects.
The new media injector MI can be combined with a conventional gas nozzle with outlet openings, like holes, nozzles, slits or perforations, in order to achieve modulated or more uniform distribution of the gas, as illustrated in
In one modification of the invention, a number of gap segments are formed between the tubular elements. The media injector according to the invention can be designed, so that a second gap limitation surface opposite the first gap limitation surface is formed by a surface of a non-tubular work piece. This surface is preferably flat. A variant is shown in
Instead of the two-part variant of
The invention also includes variants, in which several faces of the tubular elements are provided to form a structured gap space, and/or in which a gap has more than two gap segments. The tubular element can have a cross-section with a closed periphery to form a continuous gap. It is preferred, if the tubular element has a circular, oval, polygonal or rectangular cross-section. It is understood that the cross-section can also quite generally consist of curved sections with different radii connected singly or in multiple fashion.
The media injector according to the invention is advantageously used for transport of a preferably fluid medium into a processing chamber in any apparatus. Examples of this are gas washers, fermenters and mixing reactors. However, use in apparatus in which a plasma is generated and/or used is particularly preferred. The media injector is preferably designed, so that the gap is part of an electrode arrangement. It is therefore possible to introduce the medium into an area, in which particularly adapted conditions for making the medium effective are present. Additional available elements can also optionally be used to form the gap. In one modification of the invention, at least parts of the gap limitation surface lie at least temporarily at different electric potentials.
The media injector according to the invention can advantageously be configured to prevent arcing between two electrodes that have, at least temporarily, different potentials. As is known per se, arcing between two electrodes with different potentials can be prevented, if the intermediate space between the two electrodes is reduced or the plasma pressure in between is reduced. The pressure between the electrodes can be reduced by pumping or, if a higher pressure prevails between the electrodes than spatially behind one of the electrodes, by arranging holes in the last-named electrode. Such holes need only be dimensioned large enough, so that the corresponding function of the electrode is not compromised. For example, the function of the electrode as a shield must also be guaranteed when holes are present. Holes are also preferably made in the electrode in an area that is less critical with respect to arcing, and/or in which the pressure is sufficiently low on the side of the electrode facing away from the intermediate space of the two electrodes. To prevent arcing between two electrodes, an intermediate space between the electrodes can also be filled at least partially with an appropriate material.
In
Since the function of an injector is favorably influenced, especially when the media injector is used in the field of plasma technology, by exact maintenance of specific geometric specifications, reliable positioning of the injector, as well as its components, is advantageous. Positioning of at least one element, component and/or work piece of the media injector by shape-mated fastening is therefore preferably prescribed. Rotationally symmetric parts can be joined in shape-mated fashion with particular simplicity by providing so-called centerings on the parts being joined. The gap 4 can preferably be formed by two spaced circular rings, stacked one above the other, which are preferably provided with centerings. A modification in which the circular rings are designed one in the other for centering or self-centering is particularly preferred.
Centering can also be produced by one or more work pieces arranged between the electrodes 16, 17, which at least partially fill-up the intermediate space between the electrodes. A work piece or several work pieces can also be adapted, so that they fulfill more than one function. It is preferably prescribed that the two electrodes be insulated by one or more work pieces and good heat transport additionally guaranteed between the electrodes. The work piece or work pieces can consist of insulating material. In another variant, several materials are combined. In another modification, a material with good heat conduction, which is also electrically conducting, for example, a metal, like silver, copper or aluminum, is combined with one or more layers of insulators that are preferably made thin with poor heat conduction. A configuration, in which an electrode is actively or passively cooled and absorbs heat, among other things that develops on the other electrode, is preferred.
In a preferred variant of the invention, a Faraday dark space of the plasma is allocated to the gap. Gas inlet preferably occurs into the Faraday dark space between two electrodes. As a result of transport of the medium, an area of increased pressure develops in the gap space in contrast to the desired pressure reduction described from the prior art to reduce arcing. In the media injector according to the invention, it was found that gas feed into the gap space between two electrodes can surprisingly occur without arcing. The electrodes can then lie at any potential. It is understood that one of the electrodes can also lie at ground potential.
When a media injector according to the invention is used for a plasma source, the ion current density can be significantly increased and the probability of arcing reduced. Optimized distribution of ion current density and activated reactive species, like activated oxygen, is also made possible.
The media injector according to the invention is preferably used in a plasma source known from EP 0 463 203 A1. The content of this document is therefore fully included for characterization of the aspects of the present invention. The plasma source has an electron emitter with a tubular anode connected after it and is provided with an inlet for process gas for emission of the plasma. The plasma source is also equipped with magnets for alignment and guiding of the plasma through the anode tube into the processing chamber. A device for generation of atoms, molecules or clusters of materials to produce a layer on the substrates is arranged in the processing chamber. This is preferably an electron beam evaporator, a thermal evaporator or a sputtering cathode. The plasma source is also provided with a dark space shield, which ensures that undesired additional plasmas are prevented. In the known device for coating of substrates or the plasma source used in them, supply of gas occurs through inlet connectors with correspondingly non-homogeneous distribution of gas in the feed space. A plasma source of this type is known from EP 1 154 459 A2, in which feed of reactive gas occurs through a gas ring above the plasma source. Feed of gas according to the invention occurs in such plasma sources through at least one media injector according to the invention.
A media injector MI according to the invention for a plasma source with a gas nozzle 21 arranged between two electrodes 16, 17 is shown in
The variant of the invention depicted in
The variant of the new media injector in
In a preferred variant of
Another embodiment of the variant in
A modification of the media injector according to the invention is shown in
To suppress parasitic plasmas, gratings 27 or porous work pieces can be inserted into gas feed 1, which can consist of a metal, an insulator or a semiconductor. In
The media injector according to the invention can have different geometric configurations. In conjunction with a plasma source, but not restricted to this source, preferred geometric configurations are shown in
Media injector MI with a rectangular configuration is shown in
In a preferred variant of the plasma source, the anode has a cylindrical shape and is arranged axially offset relative to a cathode, as is already known from the prior art. The medium can expediently be axially offset through the gap relative to the anode and be supplied to an area arranged on the side of the processing chamber opposite the cathode, or into an area arranged between the anode and cathode of the processing chamber. The medium can also be supplied axially offset relative to the anode in an area of the processing chamber arranged on the side of the cathode. It is also advantageous, if the medium is supplied through the gap in an area of the anode and/or cathode of the processing chamber. It is understood that the axial offset between the cathode and anode is not essential for function of the plasma source.
A spatial representation of a media injector MI preferred for a cylindrical plasma source is shown in
The plasma source has additional components not shown in the drawing, especially an electron emitter, as well as optionally magnets for alignment and guiding of the plasma, and generates a plasma lobe that extends outside of the source. Positioning of the gap space 7 in the interior of the cylindrical electrode configuration 16, 17, 23 makes it possible to reduce or completely prevent direct evaporation of the gap limitation surfaces, for example, by atoms, molecules or clusters of the coating materials generated outside of the plasma source. Consequently, the parameters of the transport opening are unchanged for feed of gas, so that high operational stability can be achieved. The plasma lobe generated by the plasma source designed according to the invention is wider than with conventional plasma sources, as described, for example, in EP 0 463 203 A1 or EP 1 154 459 A2. A more homogeneous layer distribution on the substrates being coated can therefore be achieved. The increased homogeneity is particularly pronounced in areas with a large radial spacing from the axis of symmetry of the source. An ion current density, increased by about 25% relative to the mentioned apparatuses from the prior art, can also be achieved in the central area relative to the axis of symmetry of the source. The increase in ion current density in the peripheral area relative to the axis of symmetry of the source is about 50%.
A media injector according to the invention can advantageously be provided in a sputtering device for coating of substrates. Such a sputtering device has at least one gas inlet device for the sputtering and/or reactive gas and a sputtering cathode in a processing chamber, which includes at least one sputtering target with a sputtering surface. According to the invention, at least one gas inlet device is designed as a media injector according to the invention. During operation of the sputtering device, a plasma burns over the sputtering cathode and/or bombardment of the sputtering cathode with high-energy particles occurs. In the sectional view in
The configuration depicted in
The sputtering device depicted in
For installation and/or adjustment and/or electrical insulation of the gas nozzle 21 relative to sputtering cathode 29 and shield 31, fastening elements 32 and 33 are provided. If different potentials are prescribed at least temporarily on the gas nozzle 21, sputtering cathode 29 and shield 31, these components are electrically insulated relative to each other. It can be ensured by appropriate shaping that the gas flows only in the direction of the plasma over the sputtering cathode 29.
Another variant of a sputtering device is shown in
The sputtering device of the gas nozzle ring is shown in
The gas nozzle 21 and the gas nozzle rings 13 and 14 can also be designed similar to the shielding elements from DE-OS 2 149 606. The content of this document is fully incorporated in the present invention. In the intermediate shields 29, 22 described in DE-OS 2 149 606, a gas inlet device, designed as a media injector according to the invention, is integrated in the immediate vicinity of the sputtering cathode 29.
For assembly and/or adjustment and/or electrical insulation of the sputtering cathode 29 and gas nozzle 21, as well as gas nozzle rings 13 and 14, work pieces 32, 34 can also be provided, as shown in
Another sputtering device with a media injector according to the invention is shown in
The sputtering cathode 29 and gas nozzle ring 13 are preferably held in an electrically insulating work piece 32 in the depicted variant, which serves both for positioning of the gas nozzle 21 relative to gas nozzle ring 13 and for positioning of the gas nozzle 21 and gas nozzle ring 13 relative to sputtering cathode 29. Another electrically insulating work piece 34 is arranged between the shielding element 31 and gas nozzle 21, which permits positioning of the shielding element 31 relative to gas nozzle 21. The work piece 32 can have protrusions 35 to prevent continuous layers that could result in electrical short circuits. It is understood that the work piece 34 can be designed in the same manner as work piece 32 with protrusions 35.
Depending on the employed materials of the different components being joined to each other, the need for an electrically insulating function of work pieces 32 and/or 34 can drop out. This also applies, if adjacent components, like gas nozzle 21 and shielding element 31, lie at the same potential (for example, ground).
In a modification of the sputtering device according to the invention, several gas nozzles can be provided in the area of the sputtering cathode, in order to supply gas at different spacings from the sputtering surface or the substrate being coated. The particle density of the employed gas is expediently set high at the locations, at which this is required by the process. The circumstance that the sputtering effect is reduced by the formation of oxides on the surface of the sputtering target can also be taken into account, in which case oxides are applied to the substrate. In this case, it is advantageous to supply oxygen close to the substrate and sputtering gas close to the sputtering target.
Number | Date | Country | Kind |
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10 2004 029 466.6 | Jun 2004 | DE | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/EP2005/005949 | 6/2/2005 | WO | 00 | 3/3/2008 |