Claims
- 1. A semiconductor memory device comprising:
- a memory cell array comprising memory cells arranged in matrix form having row lines and column lines, the memory cells in a same row being commonly connected to one of the row lines, the memory cells in a same column being commonly connected to one of the column lines;
- voltage boosting means, connected to at least one power source terminal of the row decoder, for boosting a power source voltage externally applied, the voltage boosting means generating a boosted voltage which is higher than the power source voltage, the boosted voltage being applied to the row decoder as a power source, and then applied to a row line selected by the row decoder, wherein the boosted voltage is applied to the memory cells through the selected row line by the row decoder; and
- at least two layered metal wiring layers for transmitting signals, a signal for selecting the memory cell is transmitted via at least one of the metal wiring layers.
- 2. A semiconductor memory device according to claim 1, wherein each of the memory cells comprises a data storage portion and a selection transistor for selecting the memory cell.
- 3. A semiconductor memory device according to claim 1, wherein the voltage boosting means includes voltage limiting means limiting the boosted voltage to a predetermined value.
- 4. A semiconductor memory device according to claim 1, wherein the voltage boosting means further comprises an output node and a transistor, a drain and gate of the transistor being connected to the output node, a source of the transistor being connected to the power source voltage, wherein the boosted voltage which is higher than the power source voltage by the threshold voltage of the transistor is applied from the output node.
- 5. A semiconductor memory device according to claim 4, wherein each of the memory cells comprises a data storage portion and a selection transistor for selecting the memory cell.
- 6. A semiconductor memory device, comprising:
- a plurality of memory cell arrays, each of the memory cell arrays including memory cells arranged in a matrix form having row lines and column lines, the memory cells in a same row being commonly connected to one of the row lines, and the memory cells in a same column being commonly connected to one of the column lines;
- selecting means for selecting a block of the plurality of memory cell arrays;
- a row decoder for selecting one of the row lines;
- voltage boosting means, connected to at least one power source terminal of the row decoder, for boosting a power source voltage externally applied, the voltage boosting means generating a boosted voltage which is higher than the power source voltage, the boosted voltage being applied to the row decoder as a power source, and then applied to a row line selected by the row decoder, wherein the boosted voltage is applied to the memory cells through the selected row line by the row decoder; and
- at least two layered metal wiring layers serve to transmit signals, a signal for selecting the memory cell is transmitted via at least one of the metal wiring layers.
- 7. A semiconductor memory device according to claim 6, wherein each of the memory cells comprises a data storage portion and a selection transistor for selecting the memory cell.
- 8. A semiconductor memory device according to claim 6, wherein the voltage boosting means includes voltage limiting means limiting the boosted voltage to a predetermined value.
- 9. A semiconductor memory device according to claim 6, wherein the voltage boosting means further comprises an output node and a transistor, a drain and gate of the transistor being connected to the output node, a source of the transistor being connected to the power source voltage, wherein the boosted voltage which is higher than the power source voltage by the threshold voltage of the transistor is applied from the output node.
- 10. A semiconductor memory device according to claim 9, wherein each of the memory cells comprises a data storage portion and a selection transistor for selecting the memory cell.
Priority Claims (3)
Number |
Date |
Country |
Kind |
62-161625 |
Jun 1987 |
JPX |
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62-163023 |
Jun 1987 |
JPX |
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62-325686 |
Dec 1987 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/901,660, filed Jul. 28, 1997, which is a division of application Ser. No. 08/731,914 filed Oct. 22, 1996, Now U.S. Pat. No. 5,745,413 which is a division of application Ser. No. 08/433,071, filed May 3, 1995, now U.S. Pat. No. 5,596,525, which is a division of application Ser. No. 08/288,219, filed Aug. 9, 1994, now U.S. Pat. No. 5,448,517, which is a continuation of application Ser. No. 08/115,100, filed Sep. 2, 1993, now abandoned, which is a continuation of application Ser. No. 07/913,451, filed Jul. 15, 1992, now U.S. Pat. No. 5,270,969, which is a continuation of application Ser. No. 07/685,650, filed Apr. 16, 1991, now U.S. Pat. No. 5,148,394, which is a continuation of application Ser. No. 07/212,649, filed Jun. 28, 1988, now U.S. Pat. No. 5,008,856.
US Referenced Citations (22)
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Country |
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Oct 1961 |
JPX |
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JPX |
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57-71587 |
May 1982 |
JPX |
60-182162 |
Sep 1985 |
JPX |
62-103900 |
May 1987 |
JPX |
WO8402800 |
Jul 1984 |
WOX |
Non-Patent Literature Citations (4)
Entry |
H.N. Kotecha. "Electrically Alterable Non-Volatile Logic Circuits", IBM Technical Disclosure Bulletin, vol. 24, No. 7B, Dec. 1981, pp. 3811-3812. |
R. Stewart et al., "A High Density EPROM Cell and Array", Symposium on VLSI Technology Digest of Technical Papers, pp. 89-90, May 1986. |
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Divisions (3)
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Number |
Date |
Country |
Parent |
731914 |
Oct 1996 |
|
Parent |
433071 |
May 1995 |
|
Parent |
288219 |
Aug 1994 |
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Continuations (5)
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Number |
Date |
Country |
Parent |
901660 |
Jul 1997 |
|
Parent |
115100 |
Sep 1993 |
|
Parent |
913451 |
Jul 1992 |
|
Parent |
685650 |
Apr 1991 |
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Parent |
212649 |
Jun 1988 |
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