Claims
- 1. A method for processing a substrate having a conductive material and a low dielectric constant material disposed thereon, comprising:
polishing a substrate at a polishing pressure of about 2 psi or less and a platen rotational speed of about 200 cps or greater.
- 2. The method of claim 1, wherein the platen rotational speed is between about 200 cps and about 500 cps.
- 3. The method of claim 1, wherein the polishing pressure is between about 0.2 psi and about 1.0 psi.
- 4. The method of claim 1, wherein the polishing the substrate comprises polishing the substrate with a polishing composition comprising up to about 1.0 wt. % abrasives.
- 5. A method for processing a substrate, comprising:
polishing a substrate having a low k dielectric material disposed thereon at a first polishing pressure of about 2 psi or less and a platen rotational speed of about 200 cps or greater; and then polishing the substrate at a second polishing pressure of about 1.5 psi or less.
- 6. The method of claim 5, wherein the platen rotational speed is between about 200 cps and about 500 cps.
- 7. The method of claim 5, wherein the first polishing pressure is between about 0.2 psi and about 1.0 psi.
- 8. The method of claim 5, wherein the polishing the substrate at the second polishing pressure further comprises polishing the substrate with an abrasive polishing composition at a platen rotational speed of about 200 cps or less.
- 9. The method of claim 8, wherein the abrasive polishing composition comprises up to about 1 wt. % of abrasives.
- 10. The method of claim 5, wherein the polishing the substrate at the second polishing pressure comprises polishing the substrate with an abrasive-free polishing composition at a platen rotational speed of about 200 cps or greater.
- 11. A method for processing a substrate having a conductive material disposed thereon in a polishing apparatus, comprising:
polishing the substrate at a first polishing pressure and a first platen rotational speed; and polishing the substrate at a second polishing pressure of about 2 psi or less and a second platen rotational speed of about 200 cps or greater.
- 12. The method of claim 11, wherein the first polishing pressure is greater than the second polishing pressure and the first rotational speed is less than the second rotational speed.
- 13. The method of claim 11, wherein polishing the substrate at the first polishing pressure and the second polishing pressure are performed on the same platen.
- 14. The method of claim 11, further comprising polishing the substrate at a third polishing pressure greater than the second polishing pressure and a third platen rotational speed less than the second platen rotational speed.
- 15. The method of claim 14, wherein the polishing the substrate at the second polishing pressure and the third polishing pressure are performed on the same platen.
- 16. The method of claim 15, wherein polishing the substrate at the first polishing pressure and the second polishing pressure are performed on a first platen and the polishing the substrate at the second polishing pressure and the third polishing pressure are performed on the second platen.
- 17. The method of claim 11, wherein the first polishing pressure is about 2 psi or greater and the first platen rotational speed is between about 26 cps and about 130 cps.
- 18. The method of claim 11, wherein the third polishing pressure is about 2 psi or greater and the third platen rotational speed is between about 26 cps and about 130 cps.
- 19. The method of claim 11, wherein the conductive material comprises copper, doped copper, copper alloys, or combinations thereof.
- 20. The method of claim 11, wherein polishing the substrate at the second polishing comprises polishing with an abrasive polishing composition having up to about 1 wt. % of abrasives.
- 21. The method of claim 11, wherein the second polishing pressure is about 1 psi or less and the second platen rotational speed is between about 200 cps about 500 cps.
- 22. A method for processing a substrate comprising feature definitions formed in a dielectric layer, a barrier material deposited on the dielectric layer and in the feature definitions, and a conductive material deposited on the barrier material and filling the feature definitions to a polishing apparatus having one or more platens and one or more carrier heads, comprising:
polishing the substrate at a polishing pressure of greater than 2 psi and a platen rotational speed between about 26 cps and about 130 cps on a first platen; polishing the substrate at a polishing pressure of 2 psi or less and a platen rotational speed of about 200 cps or greater on the first platen; polishing the substrate at a polishing pressure of 2 psi or less and a platen rotational speed of about 200 cps or greater on a second platen; and polishing the substrate at a polishing pressure of greater than 2 psi and a platen rotational speed between about 26 cps and about 130 cps on the second platen.
- 23. The method of claim 22, further comprising polishing the substrate to remove the barrier layer.
- 24. The method of claim 22, wherein the substrate is polished at a polishing pressure of about 5.5 psi and a platen rotational speed of about 130 cps (about 100 rpm) and then polished at a polishing pressure of about 1 psi and a platen rotational speed of about 200 cps on the first platen.
- 25. The method of claim 22, wherein the substrate is polished at a polishing pressure of about 1 psi and a platen rotational speed of about 200 cps and then is polished at a polishing pressure of about 5.5 psi and a platen rotational speed of about 130 cps on the second platen.
- 26. The method of claim 22, wherein the substrate is polished at a polishing pressure of about 1 psi and a platen rotational speed of about 200 cps and then is polished at a polishing pressure of about 3 psi and a platen rotational speed of about 60 rpm with an abrasive free polishing composition on the second platen.
- 27. The method of claim 22, wherein the substrate is polished at a polishing pressure of about 1 psi and a platen rotational speed of about 200 cps and then is polished at a polishing pressure of about 2 psi and a platen rotational speed of about 130 cps with an abrasive polishing composition on the second platen.
- 28. The method of claim 27, wherein the abrasive polishing composition includes up to about 1.0 wt. % abrasives.
- 29. The method of claim 22, wherein the conductive material comprises copper, doped copper, copper alloys, or combinations thereof, and the barrier layer comprises tantalum, tantalum nitride, or combinations thereof.
- 30. A method for processing a substrate having a conductive material disposed thereon in a polishing apparatus, comprising:
polishing the substrate at a first platen rotational speed at a first polishing pressure of about 2 psi or less; and polishing the substrate at a second platen rotational speed less than the first platen rotational speed and at a second polishing pressure of about 2 psi or less.
- 31. The method of claim 30, wherein the first platen rotational speed is between about 200 cps and about 500 cps and the second platen rotational speed is between about 50 cps and about 100 cps.
- 32. The method of claim 30, wherein polishing the substrate at the first platen rotational speed and the second platen rotational speed are performed on the same platen.
- 33. The method of claim 30, wherein the conductive material comprises copper, doped copper, copper alloys, or combinations thereof.
- 34. The method of claim 30, wherein polishing the substrate at the second polishing comprises polishing with an abrasive polishing composition having up to about 1 wt. % of abrasives.
- 35. The method of claim 30, wherein the first and second polishing pressures are between about 0.2 psi and about 1.0 psi.
- 36. The method of claim 30, wherein the first and second polishing pressures are between about 0.2 psi and about 1.0 psi.
- 37. The method of claim 30, wherein the second polishing pressure is less than the first polishing pressure.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims benefit of U.S. Provisional Patent Application Serial No. 60/308,030, filed Jul. 25, 2001, which is incorporated herein by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60308030 |
Jul 2001 |
US |