Patent Application
20060192155
The present invention related to laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light sources using plasma source material in the form of liquid metal and more specifically to systems for handling and delivering the liquid metal to a target formation mechanism.
It is known in the art to generate EUV light from the production of a plasma of an EUV source material which plasma may be created by a laser beam irradiating the target material at a plasma initiation site (i.e., Laser Produced Plasma, “LPP”) or may be created by a discharge between electrodes forming a plasma, e.g., at a plasma focus or plasma pinch site (i.e., Discharge Produced Plasma “DPP”) and with a target material delivered to such a site at the time of the discharge. Target delivery in the form of droplets of plasma source material, which may, e.g., be mass limited for better plasma generation conversion efficiency and lower debris formation, are known techniques for placing the plasma source material at the appropriate location and at the appropriate time for the formation of the plasma either by LPP or DPP. A number of problems are known to exist in the art regarding the handling of the target material, e.g., liquid metal feeding to a mechanism for the formation of target droplets either of the metal itself or a suspension, dispersion or other mixture of the target material with a liquid that is not reactive with the target material, e.g., water or alcohol for a tin metal plasma source material and a liquid plasma source material compound such as Li(CH3). The present applications relates to aspects of embodiments of methods and apparatus for dealing with such problems.
Complex liquid metal handling systems are found in certain liquid metal cooled nuclear reactors, as wall protection in experimental fusion reactors and for use with targets in high energy particle accelerators.
An EUV light source plasma source material handling system and method is disclosed which may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is on line; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is on line. The transfer mechanism may comprise a conduit interconnecting the supply reservoir and the droplet generator plasma source material reservoir. The transfer mechanism may comprise a valve isolating the supply reservoir from the droplet generator plasma source material reservoir. The supply reservoir may comprise a solid form of the plasma source material used to periodically form from a portion of the material in solid form the material in liquid form. The transfer mechanism may comprise a heater mechanism operative to apply heat primarily to a surface of the solid form of the plasma source material. The transfer mechanism may comprise a heat actuated valve between the supply reservoir and the droplet generator plasma source material reservoir. The apparatus and method may comprise a displaced heater mechanism disposed above a molten material gathering region of the supply reservoir operative to apply heat to a solid form of the plasma source material in the vicinity of the displaced heater mechanism. The apparatus and method may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is on line; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is on line, a discharge end of the transfer mechanism positioned below the upper surface of the droplet generator plasma source material in the droplet generator plasma source material reservoir during such transferring. The apparatus and method may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir displaced above the droplet generator plasma source material reservoir, in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is on line; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is on line. The apparatus and method may comprise a liquid plasma source material handling controller maintaining a level of droplet generator plasma source material in the droplet generator plasma source reservoir based upon the sensing of the level of the droplet generator plasma source material in the droplet generator plasma source material reservoir and the sensing of a level of liquid plasma source material in the supply reservoir. The apparatus and method may comprise the controller controlling a heating mechanism heating at least one surface of a solid form of the plasma source material in the supply reservoir prior to the transferring in response to a sensing of the level of liquid plasma source material in the supply reservoir. The apparatus and method may comprise the controller controlling the heating of at least one surface of a solid form of plasma source material in the supply reservoir after the transferring responsive to the sensing of a level of liquid plasma source material in the supply reservoir.
The method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, comprising the steps of: utilizing an initial cleaning and conditioning process to achieve stable long-term performance, due to initial contamination due to liquid metal and plasma source material handling system component chemical interaction by providing an initial flush of the system. The flush is carried out at a selected temperature and introduced in sufficient quantity to avoid clogging. The method and apparatus may comprise subjecting plasma source material handling system component surfaces in contact with the plasma source material to a passivation process. The passivation material may comprise an acid bath to leech out materials through the component surfaces reactive with molten plasma source material. The method and apparatus may comprise choosing materials for surfaces wetted by the liquid plasma source material to substantially limit the formation of intermetallic compounds by the wetted surface material and the liquid plasma source material. The method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, which may comprise the steps of: utilizing an inline filter intermediate the plasma source material supply system and the droplet generator plasma source material reservoir to prevent contaminants in the plasma source material reservoir from reaching the droplet generator plasma source material reservoir. The method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, which may comprise the steps of: maintaining temperatures in at least one selected portion of the material handling system so as to avoid thermal gradients within the at least one selected portion sufficient to cause solubility differences sufficient to precipitate out insoluble compounds as particulate. The method and apparatus may comprise maintaining at least one selected portion of the material handling system downstream of a valve in the transfer mechanism at an elevated temperature sufficient to avoid blockage of at lest one narrowed passage portion of the at least one selected portion. The at least one selected portion is selected from the capillary, a nozzle at the discharge end of the capillary and an output orifice in the nozzle. The method and apparatus may comprise an EUV light source plasma source material handling system which may comprise: a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator at temperature; a storage mechanism storing plasma source material in a solid form within the droplet generator plasma source material supply system to replenish the plasma source material in the molten portion of the supply system reservoir. the method and apparatus may comprise a porous separator separating a solid form storage portion of the plasma source material supply system reservoir from the molten plasma source material supply system reservoir; a heating mechanism heating the porous separator to inject liquid plasma source material into the molten portion of the plasma source material supply system reservoir by melting at least a portion of the solid form of the plasma source material. The method and apparatus may comprise a hopper in the plasma source material supply system reservoir containing plasma source material in a solid dispensable form comprising a remotely operated dispensing mechanism delivering a selected quantity of the solid dispensable plasma source material to the molten plasma material portion of the plasma source material supply system reservoir. The dispensable form may comprise a pellet form or a powder form. The apparatus and method may comprise a holding mechanism holding the solid form plasma source material separate from the molten portion of the plasma source material supply system reservoir; a segmented heating mechanism selectively heating a selected segment of the solid form plasma source material in the plasma source material supply system reservoir to replenish the liquid form plasma source material in the molten portion of the plasma source material supply system reservoir.
Turning now to
Laser pulses delivered from the pulsed laser system 22 along a laser optical axis 55 (or plurality of axes, not shown in
The light source may also include a collector 30, e.g., a reflector, e.g., in the form of a truncated ellipse, with an aperture for the laser light to enter to the irradiation site 28. Embodiments of the collector system are described in more detail below and in above referenced co-pending applications. The collector 30 may be, e.g., an elliptical mirror that has a first focus at the plasma initiation site 28 and a second focus at the so-called intermediate point 40 (also called the intermediate focus 40) where the EUV light is output from the light source and input to, e.g., an integrated circuit lithography tool (not shown). The system 20 may also include a target position detection system 42. The pulsed system 22 may include, e.g., a master oscillator-power amplifier (“MOPA”) configured dual chambered gas discharge laser system having, e.g., an oscillator laser system 44 and an amplifier laser system 48, with, e.g., a magnetic reactor-switched pulse compression and timing circuit 50 for the oscillator laser system 44 and a magnetic reactor-switched pulse compression and timing circuit 52 for the amplifier laser system 48, along with a pulse power timing monitoring system 54 for the oscillator laser system 44 and a pulse power timing monitoring system 56 for the amplifier laser system 48. The system 20 may also include an EUV light source controller system 60, which may also include, e.g., a target position detection feedback system 62 and a firing control system 64, along with, e.g., a laser beam positioning system 66.
The target position detection system 42 may include a plurality of droplet imagers 70, 72 and 74 that provide input relative to the position of a target droplet, e.g., relative to the plasma initiation site, and provide these inputs to the target position detection feedback system, which can, e.g., compute a target position and trajectory, from which a target error can be computed, if not on a droplet by droplet basis then on average, which is then provided as an input to the system controller 60, which can, e.g., provide a laser position and direction correction signal, e.g., to the laser beam positioning system 66 that the laser beam positioning system can use, e.g., to control the position and direction of the laser position and direction changer 68, e.g., to change the focus point of the laser beam to a different ignition point 28. Input may also be provided to the target delivery system 24 to correct for positioning error of the targets, e.g., droplets of liquid plasma source material from the desired plasma initiation site, e.g., at one focus of the collector 30.
The imager 72 may, e.g., be aimed along an imaging line 75, e.g., aligned with a desired trajectory path of a target droplet 94 from the target delivery mechanism 92 to the desired plasma initiation site 28 and the imagers 74 and 76 may, e.g., be aimed along intersecting imaging lines 76 and 78 that intersect, e.g., along the desired trajectory path at some point 80 along the path before the desired ignition site 28. other alternatives are discussed in above referenced co-pending applications.
The target delivery control system 90, in response to a signal from the system controller 60 may, e.g., modify, e.g., the release point and/or pointing direction of the target droplets 94 as released by the target delivery mechanism 92 to correct for errors in the target droplets arriving at the desired plasma initiation site 28.
An EUV light source detector 100 at or near the intermediate focus 40 may also provide feedback to the system controller 60 that can be, e.g., indicative of the errors in such things as the timing and focus of the laser pulses to properly intercept the target droplets in the right place and time for effective and efficient LPP EUV light production.
According to aspects of an embodiment of the present invention applicants propose to improve droplet generator run time by way of, e.g., increasing material storage capacity. Applicants propose a melt on demand system to cut down on the molten storage of liquid metal for plasma source target droplet material, such as liquid tin or liquid lithium. In addition to volume storage requirements a large volume of liquid metal stored for usage in target droplet formation raises problems of heating to maintain the volume as a liquid and other related problems which will be understood by those skilled in the art, including also the need for operator interaction with the system to maintain the material and dross and slag buildup and potential for clogging relatively small openings in the target material handling and delivery system.
By way of example a prototype tin droplet generator tested by applicants assignee Cymer was found to have a finite run time of approximately 3-4 hours at a droplet formation rate of 24,000/second. Refilling the prototype generator was found to require a substantial amount of time for cool down, disassembly, reassembly, and reheat. Increasing the generator chamber volume may work to resolve these operating efficiency issues, however, the ability to do this is limited, e.g., by the static head that develops, in addition to other problems noted above. Static head may induce dribbling and inhibit rapid shut off of the droplet formation by the droplet generator.
According to aspects of an embodiment of the present invention applicants propose a target material handling system 110 including a bulk material reservoir 112 as shown partly schematically and partly in cross section in
The droplet generator 92 reservoir chamber 114 may be coupled to a second, bulk reservoir chamber 112 chamber, e.g., through a valve 120. Both chambers 112, 114 may be closed volume with independent, active pressure control systems (not shown). In such a system, the operator may fill the bulk reservoir chamber 112, closes the lid 116, heat up the plasma source metal material to get it into the liquid form, open the valve 120, e.g., by heating a pipe 122 between the chambers 112, 114 with a heater 124, to form a liquid metal in the pipe 122 and then depressurize the chamber 114 and pressurize the chamber 112 (or otherwise pressurize the chamber 112 more than the chamber 114) to fill the target generator 92 chamber 114 from the bulk reservoir chamber 112. Periodic refilling of bulk chamber is required, e.g., when a low level is detected by a level detector 130 in the target droplet generator chamber 112 but can be done while droplet generator is hot thus saving time. However, the bulk chamber still requires periodic refilling which can inconvenience the operator depending upon frequency and type of material used. For example, Lithium poses some special problems due to its reactivity, requiring, e.g., that it be handled in an inert environment. The larger the bulk chamber 114, the longer the time between refills. Unfortunately, there are a number of required tradeoffs for using such a jumbo bulk reservoir chamber 112, e.g., the large mass of molten metal in bulk reservoir can, e.g., produce large amounts of slag/dross thus affecting yield and possibly run time; a large static head will form and may result in overfilling of generator reservoir and other problems noted above; and a short and wide chamber can be used to minimize the static head but will maximize slag/dross formation due to the large surface area. Further, prolonged heat and cool down time is required, since, e.g., the bulk chamber must be cool when refilling to protect operator and maintain high purity.
According to aspects of an embodiment of the present invention, applicants propose a bulk reservoir system 118 that can minimize operator interaction, e.g., minimize the frequency of required refills and at the same time avoid the problems of too large a reservoir chamber 112. According to aspects of an embodiment of the present invention applicants propose a bulk reservoir system 118 that can be utilized for a long period of time, e.g., up to six months or more to supply, e.g., lithium, and freeing the user from the task of refilling the bulk reservoir 112 more often. The bulk reservoir 112 can, e.g., be filled with, e.g., lithium at the manufacturer, e.g., in a more controlled environment than, e.g., a semiconductor microlithography fabrication facility and transported to the facility to replace a used bulk reservoir system 118, thereby reducing the problems of handling a highly reactive target source material such as lithium in a heated and liquid form, such as reacting with ambient materials in the users fabrication facility causing, e.g., contamination in what are intended to be highly contaminant free environments. Alternatively, when the plasma source target material runs out, the entire droplet generator system 110, with the bulk reservoir system 118 and the droplet generator 92 may be replaced with new units.
According to aspects of an embodiment of the present invention applicants propose a “Melt on Demand” bulk reservoir 112 feed system which may include, e.g., heating only the bottom of a solid piece 140 of plasma source target material thereby producing a small quantity of melt 142. The level sensor 132 can detect when the melt volume 144 in the droplet generator 92 reaches a minimum level. At this time, the chamber valve 120 can be opened and molten metal 142 conveyed from the bulk reservoir chamber 112 to the to the droplet generator chamber 114.
The target delivery control system 90 may receive inputs from the level sensors 130, 132 and control the heaters, e.g., bottom heaters 150 to melt a given amount of the solid material 140, e.g., until the level sensor 132 indicate a given amount of liquid material 142 exists in the bulk reservoir 112 and also the heaters 124 to open the valve, or otherwise initiate fluid communication between the reservoir 112 and the reservoir 114, e.g., with another type of valve (not shown) to allow the newly formed and/or re-melted material 142 in the bulk reservoir 112, during or after which the bottom heaters may be turned off, such that the solid material 140 ceases to melt and if there is liquid material 142 left in the reservoir 112 is may also solidify after some time. The bottom heaters 150 and the valve 120 heaters may be turned off until the next call for material by the controller 90. The heaters 160 around the droplet generator reservoir 114 may be kept continuously on by the controller 90 or cycled by the controller 90 as necessary to maintain the temperature of the plasma source material 144 within some selected range to keep it molten in the droplet generator reservoir 114. The molten material 142 may be essentially all drained from the reservoir 112 and the bottom heaters 150 turned off by the controller 90. At the next replenishment, the heaters 150 may be turned on and the level sensor 132 used to indicated a desired amount of molten material 142 has been created prior to opening the valve 120 to drain essentially all of this molten material 142 into the reservoir 114 and then the heaters 150 may again be turned off to await the next needed replenishment of the reservoir 114.
The molten material 144 may then be forced, e.g., under pressure through a capillary 164 which may be actuated by a piezoelectric actuator 162 under the control of the controller 90 to form droplets 94 at the output orifice 168 of a nozzle 166 including the capillary 164.
Alternatively, according to aspects of an embodiment of the present invention, as shown by way of example in
According to aspects of an embodiment of the present invention applicants propose a solution to the slag build up/crust formation, e.g., on the surface of the liquid material 144 in the droplet generator 92 reservoir 114, e.g., to enable more extended operation using refilling, e.g., from a bulk plasma source material reservoir system 114. Applicants propose as illustrated partly schematically and partly in cross section in
According to aspects of an embodiment of the present invention applicants propose to utilize the advantages of a multi-vessel system for online and in situ refilling and slag reduction. This can, e.g., extend the run time of a liquid metal jetting system as well as increase the purity of the jetted material and decrease the build up of slag in the liquid metal reservoir 114 in the target droplet generator used for jetting. In
According to aspects of an embodiment of the present invention applicants propose methods and apparatus of the successful jetting of plasma source material in liquid form, e.g., molten lithium or tin through the use of proper design and initial conditioning of the jetting hardware, in order to achieve stable, non-clogging jetting of liquid metals through a microscopic orifice, e.g., about one μm in diameter.
Applicants propose a hardware requirement coupled with an initial cleaning and conditioning process to achieve stable long-term performance from a jetting device 92. In addition to an inline filter 210 such as that shown in
In the case of liquid tin using stainless vessels and parts, these will need, e.g., to be passivated, e.g., in an acid bath to leech out impurities, e.g., iron from the outer layers of the stainless. Such can otherwise dissolve in the tin and eventually form tin iron intermetallic compounds that are large enough to disturb or completely clog the output orifice 168. As a general rule the materials wetted by the liquid plasma source material 142, 144 should be chosen to limit or eliminate the intermetallic compounds that exist, e.g., for tin, metals, e.g., molybdenum, tantalum or tungsten alloy can be used and for lithium, perhaps also molybdenum, tantalum or tungsten.
Further, the temperature of the system should be constant throughout normal operation (and in time) to within ±2° C., to avoid thermal gradients that can drive solubility differences and compound the problems with impurities and/or leeching products concentrating to the point where they exceed the solubility limit and become particulate. Applicants believe that certain critical parts (i.e. the nozzle 166 and/or the capillary 164 and/or the output orifice 168 and any parts downstream of the filters) could be intentionally held at a hotter temperature, e.g., about 25° C., but not the other way around. As a general rule the colder the better as essentially all reaction rates and solubility limits increase with temperature.
Turning now to
Those skilled in the art will understand that as explained above according to aspects of an embodiment of the present invention an EUV light source plasma source material handling system and method is disclosed which may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary, which may comprise a generally narrowed passageway in the droplet generator intermediate the reservoir and an output orifice of the droplet generator and may also comprise some form of a a nozzle portion at the discharge end of the capillary, including for example simply a narrowing portion of the capillary leading to a discharge opening/orifice. The source material reservoir and capillary may, e.g., be maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form as will be understood by those skilled in the art, dependent upon the type of plasma source material, e.g., tin or lithium, which are metals that are solid at room temperature and must be heated to some temperature to be melted and also perhaps kept above some temperature to insure maintenance of molten form throughout. The plasma source material may also be in some form, e.g., a compound of tin or lithium that is liquid at room temperature, and may be kept in solid form by reducing its temperature and later again allowing it to go to some ambient temperature at which it becomes liquid. Liquid and molten are used in this application and the appended claims to mean the same in this regard, i.e., regardless of whether or not the technically speaking its ordinary room temperature form is solid and it is heated to make it liquid/molten or its ordinary room temperature form is liquid and it is cooled to make it solid/frozen.
A plasma source material supply system may be included, e.g., which may have a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and hold at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is on line. Those skilled in the art of material handling and transfer will understand that the specifics of the replenishing amount may be a balance, e.g., between the frequency of transfers from one reservoir to the other that may be desirable and the possibility of, e.g., slag layers forming in the reservoir(s) if too large in size. A transfer mechanism, which may be as simple as a gravity driven transfer conduit, e.g., with a control valve, or utilize a suitable pump capable of pumping the material being transmitted, or differentially pressurized chambers, or other forms of transferring liquid plasma source material from, e.g., the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is at temperature or on line, as will be understood by those skilled in the fluid materials handling art. By on line or at temperature is meant according to aspects of an embodiment of the present invention to mean that an advantage of the present invention allows for simple, easy, relatively time efficient ways to replenish the liquid plasma source material in the droplet generator reservoir as that is being depleted by the ongoing droplet formation and the limits of a finite space in the droplet generator reservoir and the issues with overly large volume reservoirs that are noted herein, without having to perform certain potentially contaminating and/or time consuming operations, such as breaking the seal of the droplet generator reservoir or cooling down part or all of the plasma source material delivery system. Ordinarily this means that the system can be replenished over and over while the system is “on line,” i.e., continuing to operate. However, it may be considered that certain states of operation, in idle or standby and so forth, where, e.g., EUV light is not being generated and thus droplet generation is not called for, are not states of being “on line.” However, whether droplets are being generated or not, the system may still be considered to be “on line.” as long as it is not shut down, such as for maintenance, and thus maintenance of the liquid/molten condition of the plasma source material in the plasma source material droplet generator reservoir is not needed. For purposes of this application and the appended claims, “on line” or “at temperature” are considered to be any state where the liquid/molten state of the plasma source material at least in the plasma source material droplet generator reservoir (and concomitantly the liquid discharge portion of the droplet generator) is desirable and/or necessary.
The transfer mechanism may comprise a conduit interconnecting the supply system reservoir and the droplet generator plasma source material reservoir. The transfer mechanism may comprise a valve isolating the supply reservoir from the droplet generator plasma source material reservoir, which may be a simple as a heating/cooling mechanism to solidify plasma source material in a transfer tube to stop flow and liquify it to allow flow, or other forms of valves, e.g., typically remotely operated, e.g., by a solenoid to permit or block flow. The supply reservoir may comprise a solid form of the plasma source material used to periodically form from a portion of the material in solid form the material in liquid form. The transfer mechanism may comprise a heater mechanism operative to apply heat primarily to a surface of the solid form of the plasma source material. The transfer mechanism may comprise a heat actuated valve between the supply reservoir and the droplet generator plasma source material reservoir. The apparatus and method may comprise a displaced heater mechanism disposed above a molten material gathering region of the supply reservoir operative to apply heat to a solid form of the plasma source material in the vicinity of the displaced heater mechanism, e.g., a meshed screen that can be heated under remote control to melt solid plasma source material in contact with the heater.
The apparatus and method may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is at temperature; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is at temperature, a discharge end of the transfer mechanism positioned below the upper surface of the droplet generator plasma source material in the droplet generator plasma source material reservoir during such transferring.
The apparatus and method may comprise a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form; a plasma source material supply system having a supply reservoir displaced above the droplet generator plasma source material reservoir, in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator is at temperature; a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, while the droplet generator is at temperature and a liquid plasma source material handling controller maintaining a level of droplet generator plasma source material in the droplet generator plasma source reservoir based upon the sensing of the level of the droplet generator plasma source material in the droplet generator plasma source material reservoir and the sensing of a level of liquid plasma source material in the supply reservoir. The apparatus and method may comprise the controller controlling a heating mechanism heating at least one surface of a solid form of the plasma source material in the supply reservoir prior to the transferring in response to a sensing of the level of liquid plasma source material in the supply reservoir. The apparatus and method may comprise the controller controlling the heating of at least one surface of a solid form of plasma source material in the supply reservoir after the transferring responsive to the sensing of a level of liquid plasma source material in the supply reservoir. Other variations are also possible, the point being that an amount necessary and/or sufficient for a given selected replenishment may always be maintained in the supply reservoir, and solid plasma source material melted after such a replenishment to enable the next replenishment, or little or no liquid/molten plasma source material maintained in liquid form in the supply reservoir until a replenishment is signaled by the controller and then solid plasma source material in sufficient quantity may be melted for the given replenishment, or replenishments may be of variable sizes and the liquid/molten plasma source material in the supply reservoir supplemented as necessary before a given replenishment or melted to the necessary/sufficient level. Those skilled in the art will also understand that a variety of control systems with a variety of different level sensors to provide the input needed for the controller to determine that state of the necessary replenishment to the droplet generator plasma source material reservoir and the available liquid/molten material in the supply reservoir, including such things as need lead tome for melting the replenishing amount into the molten portion of the supply reservoir and the like.
The method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, comprising the steps of: utilizing an initial cleaning and conditioning process to achieve stable long-term performance, due to initial contamination due to liquid metal and plasma source material handling system component chemical interaction by providing an initial flush of the system. The flush may be carried out at a selected temperature and introduced in sufficient quantity to avoid clogging, which will be understood by those skilled the art, e.g., depending on the material comprising the plasma source material and materials comprising wetted components of the system and the like. The method and apparatus may comprise subjecting plasma source material handling system component surfaces in contact with the plasma source material to a passivation process. The passivation material may comprise an acid bath to leech out materials through the component surfaces reactive with molten plasma source material. The method and apparatus may comprise choosing materials for surfaces wetted by the liquid plasma source material to substantially limit the formation of intermetallic compounds by the wetted surface material and the liquid plasma source material, such that blockage by such contaminants and/or precipitates and the like do not substantially block or clog narrow portions of the system over an operationally acceptable period of time between system maintenance such a cleaning and flushing.
The method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, which may comprise the steps of: utilizing an inline filter intermediate the plasma source material supply system and the droplet generator plasma source material reservoir to prevent contaminants in the plasma source material reservoir from reaching the droplet generator plasma source material reservoir. The method and apparatus may comprise providing EUV light source plasma source material in a plasma source material handling system comprising a droplet generator having a droplet generator plasma source material reservoir; a droplet formation capillary maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form and a plasma source material supply system having a supply reservoir and a transfer mechanism transferring liquid plasma source material from the supply reservoir to the droplet generator plasma source material reservoir, which may comprise the steps of: maintaining temperatures in at least one selected portion of the material handling system so as to avoid thermal gradients within the at least one selected portion sufficient to cause solubility differences sufficient to precipitate out insoluble compounds as particulate, as will be understood by those skilled in the art based on the materials involved.
The method and apparatus may comprise maintaining at least one selected portion of the material handling system downstream of a valve in the transfer mechanism at an elevated temperature sufficient to avoid blockage of at lest one narrowed passage portion of the at least one selected portion. The at least one selected portion is selected from the capillary, a nozzle at the discharge end of the capillary and an output orifice in the nozzle. The method and apparatus may comprise an EUV light source plasma source material handling system which may comprise: a droplet generator having a droplet generator plasma source material reservoir in fluid communication with a droplet formation capillary and maintained within a selected range of temperatures sufficient to keep the plasma source material in a liquid form as will be understood by those skilled in the art; a plasma source material supply system having a supply reservoir in fluid communication with the droplet generator plasma source material reservoir and holding at least a replenishing amount of plasma source material in liquid form for transfer to the droplet generator plasma source material reservoir, while the droplet generator at temperature; a storage mechanism storing plasma source material in a solid form within the droplet generator plasma source material supply system to replenish the plasma source material in the molten portion of the supply system reservoir. The method and apparatus may comprise a porous separator, e.g., a wire mesh, separating a solid form storage portion of the plasma source material supply system reservoir from the molten plasma source material supply system reservoir; a heating mechanism heating the porous separator to inject liquid plasma source material into the molten portion of the plasma source material supply system reservoir by melting at least a portion of the solid form of the plasma source material. The method and apparatus may comprise a hopper in the plasma source material supply system reservoir containing plasma source material in a solid dispensable form comprising a remotely operated dispensing mechanism delivering a selected quantity of the solid dispensable plasma source material to the molten plasma material portion of the plasma source material supply system reservoir. The dispensable form may comprise a pellet form or a powder form or other forms of solid that can be made to flow out of the hopper, e.g., under gravity force, when the door is opened. The apparatus and method may comprise a holding mechanism holding the solid form plasma source material separate from the molten portion of the plasma source material supply system reservoir; a segmented heating mechanism selectively heating a selected segment of the solid form plasma source material in the plasma source material supply system reservoir to replenish the liquid form plasma source material in the molten portion of the plasma source material supply system reservoir. It will be understood by those skilled in the art that the aspects of embodiments of the present invention disclosed above are intended to be preferred embodiments only and not to limit the disclosure of the present invention(s) in any way and particularly not to a specific preferred embodiment alone. Many changes and modification can be made to the disclosed aspects of embodiments of the disclosed invention(s) that will be understood and appreciated by those skilled in the art. The appended claims are intended in scope and meaning to cover not only the disclosed aspects of embodiments of the present invention(s) but also such equivalents and other modifications and changes that would be apparent to those skilled in the art. In additions to changes and modifications to the disclosed and claimed aspects of embodiments of the present invention(s) noted above the following could be implemented.
The present application is a continuation in part of United states patent application Ser. No. 11/067,124, entitled METHOD AND APPARATUS FOR EUV PLASMA SOURCE TARGET DELIVERY, filed Feb. 25, 2005, Attorney Docket No. 2004-0008-01, the disclosures of each of which is also hereby incorporated by reference. The present application is related to co-pending U.S. application Ser. No. 11/021,261, entitled EUV LIGHT SOURCE OPTICAL ELEMENTS, filed on Dec. 22, 2004, Attorney Docket No. 2004-0023-01, and Ser. No. 10/979,945, entitled EUV COLLECTOR DEBRIS MANAGEMENT, filed on Nov. 1, 2004, Attorney Docket No. 2004-0088-01, Ser. No. 10/979,919, filed on Nov. 1, 2004, entitled LPP EUV LIGHT SOURCE, Attorney Docket No. 2004-0064-01, Ser. No. 10/900,839, entitled EUV LIGHT SOURCE, Attorney Docket No. 2004-0044-01, Ser. No. 10/798,740, entitled COLLECTOR FOR EUV LIGHT SOURCE, Attorney Docket No. 2003-0083-01, the disclosures of which are hereby incorporated by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | 11067124 | Feb 2005 | US |
| Child | 11088475 | Mar 2005 | US |
