Claims
- 1. A method for producing a silicon carbide single crystal comprising allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows.
- 2. The method according to claim 1 wherein the silicon raw material of a finely divided particle form is fed onto the carbon raw material of a finely divided particle form.
- 3. The method according to claim 1 wherein the carbon raw material is maintained at a temperature of 1,900° C. or higher.
- 4. The method according to claim 1 wherein the generated gas is passed through an additional carbon material to the seed crystal substrate, said additional carbon material being disposed midway along a path of the generated gas reaching the seed crystal substrate.
- 5. A method for producing a silicon carbide single crystal comprising allowing a silicon raw material to react with a carbon raw material in a reaction crucible to generate reaction gas, that reaches a seed crystal substrate on which a silicon carbide single crystal grows, characterized in that the silicon raw material is continuously fed onto the carbon raw material which is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas.
- 6. The method according to claim 5 wherein the silicon raw material of a finely divided particle form is fed onto the carbon raw material of a finely divided particle form in a reaction crucible.
- 7. The method according to claim 5 wherein the carbon raw material is maintained at a temperature of 1,900° C. or higher.
- 8. The method according to claim 5 wherein the generated gas is passed through an additional carbon material to the seed crystal substrate, said additional carbon material being disposed midway along a path of the generated gas reaching the seed crystal substrate.
- 9. An apparatus for producing a silicon carbide single crystal comprising a reaction crucible, and a seed crystal substrate disposed in the reaction crucible, on which substrate a silicon carbide single crystal grows, said apparatus further comprising means for maintaining a carbon raw material placed in the reaction crucible at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas, and means for continuously feeding a silicon raw material onto the carbon raw material placed in the reaction crucible.
- 10. The apparatus according to claim 9, which further comprises means for feeding the silicon raw material of a finely divided form onto the carbon raw material of a finely divided form.
- 11. The apparatus according to claim 9, which further comprises means for placing an additional carbon raw material thereon, which is disposed midway along a path of the generated gas reaching the seed crystal substrate.
- 12. The apparatus according to claim 9, which further comprises means for feeding the carbon material from the outside of the reaction crucible.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-370460 |
Dec 1999 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is an application filed under 35 U.S.C. § 111(a) claiming benefit pursuant to 35 U.S.C. § 119(e)(1) of the filing date of Provisional Application 60/177,222 filed Jan. 21, 2000, pursuant to 35 U.S.C. § 111(b).
Provisional Applications (1)
|
Number |
Date |
Country |
|
60177222 |
Jan 2000 |
US |
Divisions (1)
|
Number |
Date |
Country |
Parent |
09748387 |
Dec 2000 |
US |
Child |
10310913 |
Dec 2002 |
US |