Claims
- 1. A method for producing a silicon carbide single crystal comprising continuously feeding a carbon raw material of a finely divided particle form onto a carbon raw material of a finely divided particle form whereby the carbon raw material is allowed to continuously react with the carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows.
- 2. The method according to claim 1 wherein the carbon raw material is maintained at a temperature of 1,900° C. or higher.
- 3. The method according to claim 1 wherein the generated gas is passed through an additional carbon material to the seed crystal substrate, said additional carbon material being disposed midway along a path of the generated gas reaching the seed crystal substrate.
- 4. A method for producing a silicon carbide single crystal comprising allowing a silicon raw material to react with a carbon raw material in a reaction crucible to generate reaction gas, that reaches a seed crystal substrate on which a silicon carbide single crystal grows, characterized in that a silicon raw material of a finely divided particle form is continuously fed onto a carbon raw material of a finely divided form in the reaction crucible, said carbon material being maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas.
- 5. The method according to claim 4 wherein the carbon raw material is maintained at a temperature of 1,900° C. or higher.
- 6. The method according to claim 4 wherein the generated gas is passed through an additional carbon material to the seed crystal substrate, said additional carbon material being disposed midway along a path of the generated gas reaching the seed crystal substrate.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-370460 |
Dec 1999 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATION
This application is an application filed under 35 U.S.C. § 111(a) claiming benefit pursuant to 35 U.S.C. §119(e)(1) of the filing data of Provisional Application 60/177,222 filed Jan. 21, 2000, pursuant to 35 U.S.C. §111(b).
US Referenced Citations (14)
Foreign Referenced Citations (3)
Number |
Date |
Country |
S51-8400 |
Mar 1976 |
JP |
H6-128094 |
May 1994 |
JP |
H6-316499 |
Nov 1994 |
JP |
Non-Patent Literature Citations (3)
Entry |
WPI English abstract, abstracting JP-S51-8400 of Mar. 16, 1976. |
Patent Abstracts of Japan, abstracting JP-H6-316499 of Nov. 15, 1994. |
Patent Abstracts of Japan, abstracting JP-H6-128094 of May 10, 1994. |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/177222 |
Jan 2000 |
US |