Claims
- 1. A method of selectively removing native oxide layer from a silicon wafer, comprising:exposing the silicon wafer to an etchant gas including NF3 at a partial pressure of 30-60 Torr while simultaneously exposing the wafer to ultraviolet radiation; and heating the wafer to a temperature of 100-400° C.
- 2. The method according to claim 1, wherein the wafer is heated to a temperature of 250°-350° C.
- 3. The method according to claim 1, wherein the wafer is heated to a temperature of approximately 300° C.
- 4. The method according to claim 1, wherein said etchant gas also includes N2.
- 5. The method according to claim 4, wherein said etchant gas includes N2 in approximately equal proportions by volume with NF3.
- 6. A method of selectively removing a native oxide layer from a silicon wafer without removing a polysilicon or thermal oxide deposition that may be thereon, comprising:exposing the silicon wafer to an etchant gas including NF3 at a partial pressure of 30-60 Torr, while exposing the wafer to ultraviolet radiation, and while heating the wafer to a temperature of 100-400° C.
- 7. The method according to claim 6, wherein the wafer is heated to a temperature of 250-350° C.
- 8. The method according to claim 7, wherein the wafer is heated to a temperature of approximately 300° C.
- 9. The method according to claim 6, wherein said etchant gas also includes N2.
- 10. The method according to claim 9, wherein said etchant gas includes N2 in approximately equal proportions by volume with NF3.
RELATED APPLICATION
This application is related to Provisional Application No. 60/086,655, filed May 26, 1998 and claims its priority date.
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Provisional Applications (1)
|
Number |
Date |
Country |
|
60/086655 |
May 1998 |
US |