Claims
- 1. A method for reducing defects in an integrated circuit conductive line comprising:
- providing a conductive line; and
- contacting said conductive line with a layer having a Young's Elastic Modulus less than about 20 GPa which reduces stress in said conductive line.
- 2. A method for reducing defects as recited in claim 1 wherein said layer comprises an organic dielectric material.
- 3. A method for reducing defects as recited in claim 2 wherein said organic dielectric material comprises a polyimide.
- 4. A method for reducing defects as recited in claim 1 wherein said layer is provided over said conductive line.
- 5. A method for reducing defects as recited in claim 1 wherein said layer is provided beneath said conductive line.
- 6. A method for reducing defects as recited in claim 4 wherein said layer comprises a dielectric layer having an average thickness no greater than 0.4 microns.
- 7. A method for reducing defects as recited in claim 6 wherein said dielectric layer comprises an oxide of silicon.
- 8. A method for reducing defects as recited in claim 6 wherein no portion said layer which contacts an upper surface of said conductive line is thicker than 0.4 microns.
- 9. A method for reducing defects as recited in claim 6 further comprising the step of:
- providing a buffer layer over said dielectric layer.
- 10. A method for reducing defects as recited in claim 9 further comprising the step of:
- providing a second dielectric layer over said buffer layer.
- 11. A method for reducing defects as recited in claim 9 wherein said buffer layer has a Young's Elastic Modulus less than 20 GPa.
- 12. A method for reducing defects as recited in claim 1 wherein said layer comprises an anti-diffusion layer selected from the group consisting essentially of tungsten, titanium-tungsten, and aluminum oxide.
- 13. A method for reducing defects as recited in claim 12 further comprising the step of:
- providing a dielectric layer over said anti-diffusion layer.
- 14. A conductive line structure for integrated circuits comprising:
- at least one conductive line; and
- at least one layer having a Young's Elastic Modulus less than about 20 GPa contacting said conductive line which reduces stress in said conductive line.
- 15. A conductive line structure as recited in claim 14 wherein said layer comprises an organic dielectric material.
- 16. A conductive line structure as recited in claim 14 wherein said layer is disposed over said conductive line.
- 17. A conductive line structure as recited in claim 14 wherein said layer is provided beneath said conductive line.
- 18. A conductive line structure as recited in claim 16 wherein said layer comprises a dielectric layer having an average thickness no greater than 0.4 microns.
- 19. A conductive line structure as recited in claim 18 wherein no portion of said dielectric layer which is in contact with an upper surface of said conductive line is thicker than 0.4 microns.
- 20. A conductive line structure as recited in claim 18 further comprising a buffer layer disposed over said dielectric layer.
- 21. A conductive line structure as recited in claim 20 wherein said buffer layer has a Young's Elastic Modulus less than 20 GPa.
- 22. A conductive line structure as recited in claim 21 further comprising a second dielectric layer disposed over said buffer layer.
- 23. A conductive line structure as recited in claim 14 wherein said layer comprises and anti-diffusion layer selected from the group consisting essentially of tungsten, titanium-tungsten, and aluminum oxide.
- 24. A conductive line structure as recited in claim 23 further comprising a dielectric layer disposed over said anti-diffusion layer.
- 25. A conductive line structure as recited in claim 15 wherein said organic dielectric material comprises a polyimide.
Parent Case Info
This is a continuation of application Ser. No. 07/902,182 filed on Jun. 22, 1992, now U.S. Pat. No. 5,332,868.
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4960613 |
Cole et al. |
Oct 1990 |
|
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|
5066612 |
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Non-Patent Literature Citations (2)
Entry |
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Continuations (1)
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Number |
Date |
Country |
Parent |
902182 |
Jun 1992 |
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