Method and system for gating a power supply in a radiation detector

Information

  • Patent Grant
  • 6690098
  • Patent Number
    6,690,098
  • Date Filed
    Monday, January 31, 2000
    24 years ago
  • Date Issued
    Tuesday, February 10, 2004
    20 years ago
Abstract
The present invention comprises a method for gating a power supply. A gating command terminal is capacitively coupled to an on/off switch. A gating command signal is provided at the gating command terminal. The gating command signal is operable to activate the on/off switch. An off signal is generated at an output terminal of the on/off switch in response to an off state of the on/off switch being activated. An on signal is generated at the output terminal in response to an on state of the on/off switch being activated.
Description




TECHNICAL FIELD OF THE INVENTION




This invention relates generally to vision systems and more particularly to a method and system for gating a power supply in a radiation detector.




BACKGROUND OF THE INVENTION




There are numerous methods and systems for detecting radiation. In one such system, an image intensifier tube is used to amplify light and allow a user to see images in very dark conditions. These night vision devices typically include a lens to focus light onto the light receiving end of an image intensifier tube and an eyepiece at the other end to view the enhanced imaged produced by the image intensifier tube.




Current image intensifier tubes use photocathodes. Photocathodes emit electrons in response to photons impinging on the photocathodes. The electrons are produced in a pattern that replicates the original scene. The electrons from the photocathode are accelerated towards a microchannel plate. A microchannel plate is typically manufactured from lead glass and has a multitude of microchannels, each one operable to produce a cascade of secondary electrons in response to an incident electron. Therefore, photons impinge on the photocathode producing electrons which are then accelerated to a microchannel plate where a cascade of secondary electrons are produced. These electrons impinge on a phosphorous screen, producing an image of the scene.




Current image intensifier tubes also provide automatic brightness control (ABC) and bright source protection (BSP). ABC maintains a relatively constant level of brightness in the image produced by the image intensifier tube despite fluctuating levels of brightness in the scene being viewed. BSP prevents the image intensifier tube from being damaged by high levels of current that may otherwise be generated in response to an extremely bright source.




Currently available image intensifier tubes provide ABC and BSP by gating a power supply to the photocathode. The term “gating” as used herein refers to the enabling or disabling of the photocathode of an image intensifier by providing an on-state voltage or an off-state voltage to the photocathode with respect to the input of the microchannel plate. These currently available image intensifier tubes generally utilize optical or magnetic coupling for activation of the gating circuit, which is typically floating with respect to the input of the microchannel plate. Drawbacks to these approaches include relatively slow rise/fall times and long delay times, as well as relatively great power requirements and a large number of components. Optical coupling also requires floating low voltage supplies for biasing.




SUMMARY OF THE INVENTION




In accordance with the present invention, the disadvantages and problems associated with previous image intensifiers have been substantially reduced or eliminated. In particular, the present invention provides an improved method and system for gating a power supply in a radiation detector such as an image intensifier.




In one embodiment, a method is provided for gating a power supply. A gating command terminal is capacitively coupled to an on/off switch. A gating command signal is provided at the gating command terminal. The gating command signal is operable to activate the on/off switch. An off signal is generated at an output terminal of the on/off switch in response to an off state of the on/off switch being activated. An on signal is generated at the output terminal in response to an on state of the on/off switch being activated.




Technical advantages of the present invention include providing an image intensifier with improved automatic brightness control and bright source protection. In particular, an image intensifier provides automatic brightness control and bright source protection by gating a power supply to a photocathode utilizing capacitive coupling. As a result, the design is highly compact, drop-in replacement is possible, rise/fall times are decreased, and delay times are reduced.




Other technical advantages include the use of momentary switch action that is possible with transistors. As a result, high speed switching is provided, while a high output impedance for the photocathode is maintained to provide flash protection.




Other technical advantages of the present invention will be readily apparent to those skilled in the art from the following figures, descriptions and claims.











BRIEF DESCRIPTION OF THE DRAWINGS




For a more complete understanding of the present invention, the objects and advantages thereof, reference is now made to the following descriptions taken in connection with the accompanying drawings in which:





FIG. 1

is a block diagram illustrating a radiation detector such as an image intensifier tube including a power supply for a photocathode in accordance with one embodiment of the present invention;





FIG. 2

is a block diagram illustrating a gated power supply to a photocathode in accordance with one embodiment of the present invention;





FIGS. 3A-B

are block diagrams illustrating embodiments of the switch for the gated power supply of

FIG. 2

constructed in accordance with the teachings of the present invention; and





FIG. 4

is a graph illustrating an on signal, an off signal, and a gating command signal.











DETAILED DESCRIPTION OF THE DRAWINGS




The preferred embodiment of the present invention and its advantages are best understood by referring to

FIGS. 1 through 3

of the drawings, like numerals being used for like and corresponding parts of the various drawings.




An image intensifier is a device that is capable of receiving photons from an image and transforming them into a viewable image. An image intensifier is designed to enhance viewing in varying light conditions, including conditions where a scene is visible with natural vision and conditions where a scene is invisible with natural vision because the scene is illuminated only by star light or other infrared light sources. However, it will be understood that, although an image intensifier may be used to enhance vision, an image intensifier may also be used in other applications involving photon detection, such as systems for inspecting semiconductors.





FIG. 1

is a block diagram illustrating an image intensifier tube


10


. The image intensifier tube


10


includes a photocathode


11


, a microchannel plate (MCP)


12


, and a phosphorous screen


13


. The image intensifier tube


10


also comprises a plurality of power supplies


14


,


15


and


16


. In operation, photons from an image impinge on an input side of the photocathode


11


. The photocathode


11


converts photons into electrons, which are emitted from an output side of the photocathode


11


in a pattern representative of the original image. Typically, the photocathode


11


is a circular, disk-like structure manufactured from semiconductor materials mounted on a substrate. One suitable arrangement is gallium arsenide (GaAs) mounted on glass, fiber optics or other similarly transparent substrate.




The electrons emitted from the photocathode


11


are accelerated in a first electric field that is located between the photocathode


11


and an input side of the MCP


12


. Thus, after accelerating in the first electric field which is generated by the power supply


14


, the electrons impinge on the input side of the MCP


12


.




The MCP


12


typically comprises a thin glass wafer formed from many hollow fibers, each oriented slightly off axis with respect to incoming electrons. The MCP


12


typically has a conductive electrode layer disposed on its input and output sides. A differential voltage, supplied by the power supply


15


, is applied across the input and output sides of the MCP


12


to generate a second electric field. Electrons from the photocathode


11


enter the MCP


12


where they produce secondary electrons, which are accelerated by the second electric field. The accelerated secondary electrons leave the MCP


12


at its output side.




After exiting the MCP


12


, the secondary electrons are accelerated in a third electric field that is located between the output side of the MCP


12


and the screen


13


. The third electric field is generated by the power supply


16


. After accelerating in the third electric field, the secondary electrons impinge on the screen


13


, where a pattern replicating the original image is formed.





FIG. 2

is a block diagram illustrating a gated power supply


14


to a photocathode


11


in accordance with one embodiment of the present invention. The gated power supply


14


provides a relatively constant brightness for the image seen by a user of an image intensifier. The power supply


14


comprises a switching network


100


, a positive voltage source


102


and a negative voltage source


104


. The sources


102


and


104


provide voltages with reference to the voltage supplied by the power supply


15


at the input side of the MCP


12


. The positive source


102


and the negative source


104


may be coupled to each other, and the sources


102


and


104


may also be coupled to the power supply


15


to the MCP


12


.




The switching network


100


comprises a positive terminal


106


, a negative terminal


108


and a photocathode, or output, terminal


110


. The positive terminal


106


is coupled to the positive source


102


, the negative terminal


108


is coupled to the negative source


104


, and the photocathode terminal


110


is coupled to the photocathode


11


. Thus, the switching network


100


may couple the photocathode


11


to the positive source


102


or to the negative source


104


by coupling the photocathode terminal


110


to either the positive terminal


106


or the negative terminal


108


. In addition, the switching network


100


may place the photocathode


11


in an open circuit position such that the photocathode terminal


110


is coupled to neither the positive terminal


106


nor the negative terminal


108


. As an alternative, the switching network


100


may be configured to couple the photocathode


11


to the positive source


102


and the negative source


104


without an open circuit position being available.




In operation, while the photocathode


11


is coupled by the switching network


100


to the negative source


104


, the photocathode


11


functions as described above in connection with FIG.


1


. In this configuration, the power supply


14


provides a constant negative voltage to the photocathode


11


through the negative source


104


. In one embodiment, this voltage level is approximately −800 volts. However, when the switching network


100


couples the photocathode


11


to the positive source


102


, the first electric field is directed such that essentially no electrons reach the MCP


12


and the photocathode


11


is effectively forced into a non-functioning state. In this configuration, the power supply


14


provides a constant positive voltage to the photocathode


11


through the positive source


102


. In one embodiment, this voltage level is approximately +40 volts with reference to the input of the MCP


12


.





FIG. 3A

is a block diagram illustrating one embodiment of the switching network


100


for the gated power supply


14


of FIG.


2


. The switching network


100


comprises an on/off switch


120


, an off coupling capacitor


126


and an on coupling capacitor


128


.




In operation, a gating command signal is received at a gating command terminal


132


. Based on the rise/fall direction of the gating command signal, an on state or an off state of the on/off switch


120


is activated. When the off state of the on/off switch


120


is activated, the positive terminal


106


is coupled to the photocathode terminal


110


. This provides a positive voltage from the positive source


102


to the photocathode


11


, turning the photocathode


11


off. Conversely, when the on state of the on/off switch


120


is activated, the negative terminal


108


is coupled to the photocathode terminal


110


. This provides a negative voltage from the negative source


104


to the photocathode


11


, turning the photocathode


11


on.





FIG. 3B

is a block diagram illustrating one embodiment of the switching network


100


of FIG.


3


A. In this embodiment, the on/off switch


120


comprises a first off transistor


140


, a second off transistor


142


, a first off resistor


144


, a second off resistor


146


, a first off zener diode


148


, a second off zener diode


150


and an off capacitor


152


. The off transistors


140


and


142


may comprise p-channel, high voltage mosfets or other suitable transistors. While the first off transistor


140


is activated, voltage may discharge through the first off resistor


144


to prevent crossover. The second off resistor


146


has a high enough impedance to prevent the gate of the second off transistor


142


from following the source so closely that the second off transistor


142


would not activate properly. In an exemplary embodiment, the first off resistor


144


may be approximately one kΩ and the second off resistor


146


may be approximately one MΩ. The off zener diodes


148


and


150


may be configured to clamp out at approximately 15 V in order to protect the off transistors


140


and


142


. The off capacitor


152


, which may be approximately 1,000 pF, provides a path to ground for the gating command signal. The positive terminal


106


is coupled to a positive source


102


of approximately +40 V in this embodiment.




The on/off switch


120


further comprises a first on transistor


160


, a second on transistor


162


, a first on resistor


164


, a second on resistor


166


, a first on zener diode


168


, a second on zener diode


170


and an on capacitor


172


. The on transistors


160


and


162


may comprise n-channel, high voltage mosfets or other suitable transistors. While the second on transistor


162


is activated, voltage may discharge through the second on resistor


166


to prevent crossover. The first on resistor


164


has a high enough impedance to prevent the gate of the first on transistor


160


from following the source so closely that the first on transistor


160


would not activate properly. In the exemplary embodiment, the first on resistor


164


may be approximately one MΩ and the second on resistor


166


may be approximately one kΩ. The on zener diodes


168


and


170


may be configured to clamp out at approximately 15 V in order to protect the on transistors


160


and


162


. The on capacitor


172


, which may be approximately 1,000 pF, provides a path to ground for the gating command signal. The negative terminal


108


is coupled to a negative source


104


of approximately −800 V in this embodiment.




For the embodiment shown in

FIG. 3B

, the gating command terminal


132


is coupled to the on/off switch


120


through a pair of off capacitors


126




a


and


126




b


and a pair of on capacitors


128




a


and


128




b


. According to the exemplary embodiment, the capacitors


126




a


and


128




b


are each approximately 1,000 pF, while the capacitors


126




b


and


128




a


are each approximately 100 pF.




In operation, a high gating command signal, for example approximately 15 V, is provided at the gating command terminal


132


. This high signal deactivates the off transistors


140


and


142


by turning off the off transistors


140


and


142


to an open state. When the high signal is received at the on transistors


160


and


162


, the second on transistor


162


is activated first and the drain of the second on transistor


162


drops toward −800 V. As the second on transistor


162


transitions toward −800 V, a gate-to-source voltage is developed at the first on transistor


160


. This activates the first on transistor


160


and the drain of the first on transistor


160


also drops toward −800 V. Because the off transistors


140


and


142


are deactivated, the voltage at the photocathode terminal


110


is approximately −800 V. Thus, the on state of the on/off switch


120


is activated and the photocathode


11


is turned on.




As the gate-to-source voltage of the second on transistor


162


discharges through the second on resistor


166


and falls below a threshold value, the second on transistor


162


is deactivated. This in turn deactivates the first on transistor


160


because of the absence of a current path for maintaining the gate-to-source voltage of the first on transistor


160


.




Next a low gating command signal, for example approximately 0 V, is provided at the gating command terminal


132


. This low signal deactivates the on transistors


160


and


162


, if not previously deactivated as described above. When the low signal is received at the off transistors


140


and


142


, the first off transistor


140


is activated first and the drain of the first off transistor


140


rises toward +40 V. As the first off transistor


140


transitions toward +40 V, a gate-to-source voltage is developed at the second off transistor


142


. This activates the second off transistor


142


and the drain of the second off transistor


142


also rises toward +40 V. Because the on transistors


160


and


162


are deactivated, the voltage at the photocathode terminal


110


is approximately +40 V. Thus, the off state of the on/off switch


120


is activated and the photocathode


11


is turned off.




As the gate-to-source voltage of the first off transistor


140


discharges through the first off resistor


144


and falls below a threshold value, the first off transistor


140


is deactivated. This in turn deactivates the second off transistor


142


because of the absence of a current path for maintaining the gate-to-source voltage of the second off transistor


142


.




Thus, the transistors


140


,


142


,


160


and


162


are only momentarily activated in comparison to the cycle length of the gating command signal. While all of the transistors


140


,


142


,


160


and


162


are deactivated, the existing voltage at the photocathode terminal


110


discharges at a rate that is proportional to the current in the photocathode


11


and inversely proportional to a parasitic capacitance between the photocathode


11


and the MCP


12


. This discharge rate is kept low in order to enable the momentary action of the transistors


140


,


142


,


160


and


162


to suffice in producing an appropriate signal to the photocathode


11


.




In an alternative embodiment, the negative source


104


provides approximately −400 V to the negative terminal


108


. In this embodiment, the on/off switch


120


comprises a single off transistor


140


, a single off resistor


144


, a single off zener diode


148


, a single on transistor


160


, a single on resistor


166


and a single on zener diode


168


. In addition, the gating command terminal


132


is coupled to the on/off switch


120


through a single off capacitor


126


and a single on capacitor


128


.





FIG. 4

is a graph


200


illustrating example voltages for a gating command signal


204


, on signals


206




a-b


, and off signals


208




a-b


with respect to time. According to the illustrated embodiment, the on signal


206




a


is generated by the on transistor


162


, and the on signal


206




b


is generated by the on transistor


160


. The pulse width of an on signal


206




a-b


is less than the pulse width of the gating command signal


204


. The off signal


208




a


is generated by the off transistor


140


, and the off signal


208




b


is generated by the off transistor


142


. The pulse width of an off signal


208




a-b


is less than the pulse width of the gating command signal


206


.




While the invention has been particularly shown and described by the foregoing detailed description, it will be understood by those skilled in the art that various other changes in form and detail may be made without departing from the spirit and scope of the invention.



Claims
  • 1. A method for gating a power supply, comprising:capacitively coupling a gating command terminal to an on/off switch; providing a positive voltage source and a negative voltage source at the on/off switch; providing a gating command signal at the gating command terminal, the gating command signal operable to activate the on/off switch; generating an off signal at an output terminal of the on/off switch in response to an off state of the on/off switch being activated, a pulse width of the off signal being less than a pulse width of the gating command signal; and generating an on signal at the output terminal of the on/off switch in response to an on state of the on/off switch being activated, a pulse width of the on signal being less than the pulse width of the gating command signal.
  • 2. The method of claim 1, generating an off signal at the output terminal comprising coupling the positive voltage source to the output terminal and generating an on signal at the output terminal comprising coupling the negative voltage source to the output terminal.
  • 3. The method of claim 1, wherein the step of capacitively coupling the gating command terminal to the on/off switch comprises:coupling the gating command terminal to a first and second capacitor, and coupling the first and second capacitors to the on/off switch.
  • 4. A system for gating a power supply, comprising:an on/off switch; a positive voltage source and a negative voltage source coupled to the on/off switch; a gating command terminal coupled to the on/off switch, the gating command terminal operable to provide a gating command signal to the on/off switch, the gating command signal operable to alternatively activate an on state and an off state of the on/off switch; and first and second capacitors coupled to the gating command terminal and the on/off switch, an off signal being generated at an output terminal of the on/off switch for a time less than a pulse width of the gating command signal in response to the off state being activated, an on signal being generated at the output terminal of the on/off switch for a time less than the pulse width of the gating command signal in response to the on state being activated.
  • 5. The system of claim 4, wherein the positive voltage source is coupled to the output terminal to generate the off signal at the output terminal and the negative voltage source is coupled to the output terminal to generate the on signal at the output terminal.
  • 6. The system of claim 4, the on/off switch having an open circuit position between the on state and the off state.
  • 7. A switching network for providing an alternating signal, comprising:an on/off switch comprising an output terminal; a positive voltage source and a negative voltage source coupled to the on/off switch; and a gating command terminal for providing a gating command signal capacitively coupled to the on/off switch, the gating command signal operable to activate an on state and an off state of the on/off switch such that an on signal is provided at the output terminal for a time less than a pulse width of the gating command signal while the on state is activated, and an off signal is provided at the output terminal for a time less than a pulse width of the gating command signal while the off state is activated, the gating command signal being operable to alternatively activate the on state and the off state.
  • 8. The system of claim 7, wherein the positive voltage source is coupled to the output terminal to generate the off signal at the output terminal and the negative voltage source is coupled to the output terminal to generate the on signal at the output terminal.
  • 9. The system of claim 7, further comprising first and second capacitors coupled to the gating command terminal and the on/off switch.
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