Claims
- 1. A heat conductive substrate comprising an aluminum nitride ceramic plate having a surface oxidized at a thickness of 20 microns or less and a copper layer directly bonded to said oxidized surface, a eutectic crystal being formed between the copper layer and said oxidized surface.
- 2. A heat conductive substrate according to claim 1, wherein said aluminum nitride ceramic plate contains a sintering auxiliary.
- 3. A heat conductive substrate according to claim 2, wherein said sintering auxiliary is selected from the group consisting of: oxides and carbonates of yttrium, aluminum, calcium, strontium or beryllium.
Priority Claims (2)
Number |
Date |
Country |
Kind |
57-112401 |
Jun 1982 |
JPX |
|
57-112402 |
Jun 1982 |
JPX |
|
Parent Case Info
This is a division of application Ser. No. 697,874 filed Feb. 4, 1985, now U.S. Pat. No. 4,693,409 which in turn is a divisional of application of Ser. No. 507,004 filed June 23, 1983, now abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (5)
Number |
Date |
Country |
2181049 |
Nov 1973 |
FRX |
2263210 |
Oct 1975 |
FRX |
52-37914 |
Mar 1977 |
JPX |
1352775 |
May 1974 |
GBX |
2059323 |
Apr 1981 |
GBX |
Non-Patent Literature Citations (2)
Entry |
Burgess et al., the Direct Bonding of Metals to Ceramics by the Gas-Metal Eutectic Method, J. Electrochem. Soc. (U.S.A.), vol. 122, #5, May. 1975. |
Chemical Abstracts, vol. 97, No. 6, Aug. 9, 1982, p. 259, No. 43115m, Columbus, Ohio, U.S.; & JP-A-82 47778 (Hitachi Ltd.) 18-03-1982 (Cat. Y). |
Divisions (2)
|
Number |
Date |
Country |
Parent |
697874 |
Feb 1985 |
|
Parent |
507004 |
Jun 1983 |
|