Patent Application
20140093688
The present invention relates generally to methods of fabrication of nano-structures. More particularly, the present invention relates to methods of rapid fabrication of original nano-structures on substrate surfaces.
The development and advancement of many applications of nano-technology such as those involving the use of nano-structures (structural features having dimensions in the range of nanometers) requires the ability to precisely and repeatably produce arrays of nano-structures in the surfaces of a range of materials. One approach for production of surface nano-structures in a repeatable manner involves the use of a master stamp or die comprising original nano-structures on its surface, in order to stamp, imprint, emboss or otherwise impress the nano-structures into the surface of imprintable materials in which surface nano-structures are desired, or to use as master stamps or templates for photolithographic or shadow masking nano-structure reproduction techniques, for example.
However, the ability to use such desirably repeatable imprinting, stamping, embossing or photolithographical reproduction techniques requires the production of highly precise original nano-structures in a preferably durable substrate material that is suitable for use as a master, die or template in a reproduction process. Such production of master original nano-structures in the surface of durable substrates suitable for use as master stamps or shims may require the individual registration of very large numbers of precisely formed and spaced nano-structures over relatively large surface areas (such as typically at least several square centimeters or more) in order to create nano-structure master or stamp blocks which can effectively used for reproduction of nano-structures in desired materials. Such registration or patterning of relatively large surface areas of original nano-structures on master substrate materials by conventionally known patterning methods such as ablation (such as by focused ion beam milling), radiation lithography (such as electron beam lithography) or laser interference lithography patterning methods may require undesirably long and correspondingly expensive use of patterning tools, due to the size and number of original nano-structures which must be individually patterned in their entirety in order to produce a given surface area of a desired nano-structure pattern on a master, stamp or template substrate.
Accordingly, there is a need for additional and improved methods of fabrication of original nano-structures in substrate surfaces which may desirably reduce the necessary time and/or expense of patterning tool use for the production of nano-structure masters or templates.
According to one embodiment of the present invention, a method of fabricating nano-structures on a substrate surface is provided. The method of fabrication comprises the steps of:
a) providing a suitable substrate material comprising a substrate, and process layers sequentially deposited on said substrate comprising: a lift-off layer in contact with said substrate, a pattern transfer layer on top of said lift-off layer, and a writing layer on top of said pattern transfer layer;
b) patterning pilot nano-structures in said writing layer to reveal said pattern transfer layer underneath at locations of said pilot nano-structures;
c) transferring and enlarging said pilot nano-structures into said pattern transfer layer by applying a substantially isotropic etch selective for said pattern transfer layer to undercut said pattern transfer layer and create enlarged nano-structures in said pattern transfer layer at locations underneath said locations of said pilot nano-structures;
d) undercutting said lift-off layer using a lift-off etch selective for said lift-off layer to create enlarged lift-off structures in said lift-off layer beneath the locations of said enlarged nano-structures in said pattern transfer layer to reveal said substrate underneath said locations of said enlarged nano-structures in said pattern transfer layer;
e) removing said writing layer to reveal said enlarged nano-structures in said pattern transfer layer;
f) depositing a positive mask material through said enlarged nano-structures in said pattern transfer layer to create enlarged positive mask nano-structures on said substrate at locations underneath said locations of said enlarged nano-structures in said pattern transfer layer;
g) removing said lift-off layer and said pattern transfer layer to reveal said enlarged positive mask nano-structures on said substrate; and
h) applying a directional anisotropic etch to said substrate to produce enlarged out of plane nano-structures on a surface of said substrate at said locations of said positive mask enlarged nano-structures.
In an alternative embodiment of the present invention, the above-described method may optionally further comprise the step of:
i) removing said positive mask nano-structures from said substrate to leave completed enlarged out of plane nano-structures on said substrate.
According to a further embodiment of the present invention, another method of fabricating nano-structures on a planar substrate surface is provided. The method of fabrication comprises the steps of:
a) providing a suitable substrate material comprising a substrate, and process layers sequentially deposited on said substrate comprising: a lift-off layer in contact with said substrate, a pattern transfer layer on top of said lift-off layer, and a writing layer on top of said pattern transfer layer;
b) patterning pilot nano-structures in said writing layer to reveal said pattern transfer layer underneath at locations of said pilot nano-structures;
c) transferring and enlarging said pilot nano-structures into said pattern transfer layer by applying a substantially isotropic etch selective for said pattern transfer layer to undercut said pattern transfer layer and create enlarged nano-structures in said pattern transfer layer at locations underneath said locations of said pilot nano-structures;
d) undercutting said lift-off layer using a lift-off etch selective for said lift-off layer to create enlarged lift-off structures in said lift-off layer beneath the locations of said enlarged nano-structures in said pattern transfer layer to reveal said substrate underneath said locations of said enlarged nano-structures in said pattern transfer layer;
e) removing said writing layer to reveal said enlarged nano-structures in said pattern transfer layer; and
f) applying a directional anisotropic etch to said substrate through said enlarged nano-structures in said pattern transfer layer to produce enlarged nano-structures in a surface of said substrate at locations underneath said locations of said enlarged nano-structures in said pattern transfer layer.
In an alternative embodiment of the present invention, the above-described method may optionally further comprise the step of:
g) removing said lift-off layer and said pattern transfer layer to reveal said final enlarged nano-structures etched into said substrate.
Several embodiments of the present invention will now be described with reference to the accompanying drawing figures, in which:
Similar reference numerals are used to refer to similar features throughout the drawing figures.
In one embodiment of the present invention, an improved rapid method of fabrication is provided for producing nano-structures on substrate surfaces, in which one or more patterning or writing tools may desirably be used to pattern only a portion of the final dimensions of the nano-structures desired to be produced. Accordingly, in one such embodiment, the amount of material to be patterned by the patterning or writing tool may desirably be reduced relative to other methods in which the full final dimensions of the desired nano-structures are required to be patterned by the patterning or writing tool. In such an embodiment, the relatively reduced use of the patterning or writing tool to produce any particular nano-structures in a substrate surface may desirably result in a reduction in at least one of the time and/or cost corresponding to the required use of the patterning or writing tool.
In a particular embodiment of the present invention directed to production of original nano-structures on a substrate surface such as for use as a die or stamp for imprinting and/or transfer of nano-structures to another imprintable medium, a method of fabrication of nano-structures according to the present invention may be provided wherein a patterning or writing tool is used to pattern only a portion of the desired nano-structure features to be produced on the planar substrate surface, for example. In one such embodiment, the substrate surface desired to be patterned with original nano-structures may comprise a suitable known bulk substrate material, such as silicon, silicon based materials, quartz, other SiO2 based materials, glass, polymers, resins, sapphire or other Al2O3 based materials, nickel, nickel containing alloys or other desirably stable and/or durable materials, for example. In an exemplary embodiment of the invention, original nano-structures may be produced on a substantially planar surface of an exemplary substrate material such as illustrated in
In
In one embodiment according to the present invention, a method of fabrication for producing nano-structures on substrate surfaces is provided, comprising the following steps:
a) providing a suitable substrate material comprising a substrate, and process layers sequentially deposited on the substrate comprising a lift-off layer in contact with the substrate, a pattern transfer layer on top of the lift-off layer, and a writing layer on top of the pattern transfer layer;
b) patterning desired pilot nano-structures in the writing layer using a suitable patterning or writing tool, to reveal the pattern transfer layer underneath at the location of the pilot nano-structures;
c) transferring and enlarging the pilot nano-structures into the pattern transfer layer by applying a substantially isotropic etch selective for the pattern transfer layer material to undercut the pattern transfer layer leaving enlarged nano-structures in the pattern transfer layer at locations underneath the locations of the pilot nano-structures;
d) undercutting the lift-off layer using a lifto-off etch selective for the lift-off layer material to create enlarged lift-off structures in the lift-off layer beneath the locations of the enlarged nano-structures in the pattern transfer layer to reveal the substrate underneath the locations of the enlarged nano-structures in the pattern transfer layer;
e) removing the writing layer to reveal enlarged nano-structures in the pattern transfer layer and optionally to also undercut enlarged lift-off structures in the lift-off layer revealing the substrate beneath;
f) depositing a positive mask material through the enlarged nano-structure openings in the pattern transfer layer to create enlarged positive mask nano-structures on the exposed substrate at locations underneath the locations of the enlarged nano-structures in the pattern transfer layer;
g) removing the remaining pattern transfer layer and lift-off layer to reveal the enlarged positive mask nano-structures on the substrate;
h) applying a directional anisotropic etch to the substrate over the positive mask to produce enlarged out of plane nano-structures in or on a surface of the substrate at the locations of the positive mask enlarged nano-structures; and
in a further optional embodiment,
i) optionally removing the positive mask material from the substrate surface to leave completed out of plane enlarged nano-structures on the surface of the substrate.
In one exemplary such embodiment, the substrate surface may be substantially planar. In other embodiments, the substrate surface to be patterned may be non-planar, such as curved, faceted, irregular or other substantially non-planar surfaces, for example
Referring now to
In one embodiment, the base substrate material 302 may comprise any suitable substrate material providing suitable stability and durability for use as a master die or shim on which original nano-structures may be formed. Exemplary such suitable substrate materials 302 may comprise one or more of: silicon, silicon based materials, quartz (such as fused quartz), other SiO2 based materials, glass, resins, sapphire or other Al2O3 based materials, nickel or nickel containing alloys, other suitable metals and/or alloys and some suitably stable and durable polymer and composite materials, for example. Similarly, lift-off material layer 304 may comprise any suitable lift-off material known in the art which is desirably compatible with the substrate material layer 302 and suitable for adherent uniform application (such as by a suitable coating (such as spin-coating), or deposition technique (such as physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), atomic layer deposition, or laser ablation), for example) to the substrate 302, and is desirably also selectively removable from the substrate 302 by use of one or more selective chemical, physical, or thermal agents or processes, for subsequent removal from the substrate material 302 during subsequent process steps.
In one embodiment, potential suitable such lift-off materials 304 may comprise one or more materials and/or sublayers and may comprise one or more materials known in the art of nanolithographic processing, such as in an exemplary embodiment one or more suitable materials selected from the list comprising: metals (such as but not limited to Pt, In, Cr, Ni, Ti, Ag, Au, Al, Cu for example), alloys thereof and of other metallic materials, polymers, organic polymers (such as but not limited to PMMA (poly(methyl methacrylate)) and PMGI (polymethylglutarimide) for example), polystyrene (PS), SU8, photoresist, silicon, SiO2, TiO2, indium tin oxide (ITO), poly(ethylene) carbonate (PEC), poly(acrylic) acid, and silicone/siloxane based materials, for example, wherein the selected lift-off material 304 is compatible with the selected substrate 302 and subsequent pattern transfer layer 306 and writing layer 308 materials so as to allow for selective etching and/or removal of the lift-off material 304. In another embodiment, the thickness of the lift-off layer 304 may desirably be selected to be within a range of the dimensions of the desired nano-structures, and in a further embodiment may also desirably be within an acceptable thickness range for desired positive mask material to be deposited during a positive mask deposition step. In a particular embodiment, lift-off layer 304 may comprise a 50 nm thick layer of at least one such suitable lift-off layer material, for example.
In one embodiment, pattern transfer material 306 may comprise any material suitable for adherent application (such as by a suitable coating (such as spin-coating), or deposition technique (such as physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), atomic layer deposition, or laser ablation), for example) to lift-off layer 304, and which may desirably be selectively etched or otherwise selectively removed, such as by one or more chemical, gaseous, or plasma etchants, so as to allow for controllable progressive enlargement of nano-structure patterns by such etchant in subsequent process steps, for example. In one such embodiment, the etch process applied to enlarge nano-structure patterns in the pattern transfer layer 306 may comprise a substantially isotropic etching process, such as substantially isotropic etch processes employing one or more of: wet chemical, gaseous, plasma, reactive ion, xenon fluoride (XeF2), electron cyclotron resonance (ECR), inductively coupled plasma (ICP) and plasma enhanced reactive ion (PERIE) etchants, for example.
In one such embodiment, pattern transfer material layer 306 may comprise one or more materials and/or sublayers and may comprise one or more materials known in the art of nanolithographic processing, and may be selected from the list comprising: metals (such as but not limited to Pt, In, Cr, Ni, Ti, Ag, Au, Al, Cu for example), alloys thereof and of other metallic materials, polymers, organic polymers (such as but not limited to PMMA (poly(methyl methacrylate)) and PMGI (polymethylglutarimide) for example), polystyrene (PS), SU8, photoresist, silicon, SiO2, TiO2, indium tin oxide (ITO), poly(ethylene) carbonate (PEC), poly(acrylic) acid, and silicone/siloxane based materials, for example, wherein the selected pattern transfer material 306 is compatible with the selected lift-off 304 and substrate 302 and subsequent writing layer 308 materials, so as to provide for selective etching suitability. In another embodiment, the thickness of the pattern transfer layer 306 may desirably be selected to be suitable for a desired enlargement of pilot nano-structures within the pattern transfer layer 306, such as by substantially isotropic etching of the pattern transfer layer 306. In a particular embodiment, pattern transfer layer 306 may comprise a 50 nm layer of Cr, for example.
In one embodiment, writing material 308 may comprise any material suitable for adherent application (such as by a suitable coating (such as spin-coating), or deposition technique (such as physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), atomic layer deposition, or laser ablation), for example), to pattern transfer layer 306, and which may be suitably patterned by a nano-scale patterning or writing tool, to pattern pilot nano-structures in the writing layer 308 to reveal the underlying pattern transfer layer 306 in a subsequent writing step of a method of fabrication described in further detail below. In one such embodiment, the writing material layer 308 may comprise a mask material adapted for direct removal or ablation by patterning or writing tool, such that a suitable patterning or writing tool may be used to directly remove or ablate the writing material 308 to pattern pilot nano-structures in the writing layer 308 and expose the pattern transfer layer 306 below. In another such embodiment, the writing material layer 308 may comprise a positive nanolithographic mask or photoresist mask material which may be exposed by a suitable patterning or writing tool to expose pilot nano-structure patterns on the writing material 308 which are subsequently developed by a suitable known compatible positive mask or photoresist development agent to form pilot nano-structures in the writing material 308 and expose the pattern transfer layer 306 below.
In one such embodiment, writing material layer 308 may comprise one or more materials and/or sublayers and may comprise one or more suitable materials known in the art of nanolithographic processing, wherein the selected writing material 308 is compatible with a selected patterning or writing tool, and with the selected underlying pattern transfer layer 306 material, lift-off 304 and substrate 302 materials, such as to provide for selective etching of the writing material layer 308, for example. In one embodiment, the writing material 308 may be selected from the list comprising: metals (such as but not limited to Pt, In, Cr, Ag, Au, Al, Cu for example), alloys thereof and of other metallic materials, polymers, organic polymers (such as but not limited to PMMA (poly(methyl methacrylate)) and PMGI (polymethylglutarimide) for example), copolymer P(MMA-MAA), EBR-9, ZEP resist materials such as ZEP-520, UV-3, UV-5 or Apex-E resist materials, Si/silicone/siloxane materials, and composites, for example, wherein the selected writing material 308 is compatible with at least a selected patterning or writing tool, and with the selected underlying pattern transfer layer 306, lift-off layer 308, and substrate 302 materials. In one embodiment, the thickness of writing layer 308 may be desirably selected so as to provide adequate protection of underlying material layers during patterning or writing steps, while also desirably providing for patterning of the writing layer by a suitable patterning or writing tool at a desirably low dose or intensity and desirably small beam dimension of the patterning or writing tool such as to desirably reduce required time for use of the tool to pattern pilot nano-structures in the writing layer 308, for example. In a particular embodiment, writing layer 308 may comprise a 50 nm layer of at least one such suitable writing layer material, for example.
Referring now to
According to one embodiment, the patterning or writing tool 450 may comprise an ablative patterning or writing tool suitable for writing patterns at a desired nano-scale by direct ablation of the writing layer 408. In one such embodiment, the tool 450 may comprise a focused ion beam (FIB) patterning or writing tool, which is suitable for direct ablation (such as by sputtering) of a compatible writing material 408, in order to pattern pilot nano-structures 422, 424 in the writing layer 408 and to reveal the pattern transfer layer 406 beneath. In a particular embodiment, tool 450 may comprise a gallium ion FIB tool such as an FEI Strata235™ Dual Beam SEM/FIB tool, as is known for use in nano-scale semiconductor post-fabrication analysis, for example. In one such embodiment, writing layer 408 may be selected from known materials suitable for ablative patterning such as by an FIB tool 450, and may comprise one or more metallic films for example.
According to another embodiment, the patterning or writing tool 450 may comprise a radiation exposure based tool, such as an electron beam lithography (EBL) tool 450 which may be suitable to write patterns at a desired nano-scale by exposure of a suitable photoresist or nanolithographic resist material forming the writing layer 408, for example. In one such embodiment, the writing material layer 408 may comprise a positive photoresist or nanolithographic resist material and may be developed by a suitable positive resist developer to remove the pilot nano-structures 422, 424 patterned by the exposure of the tool 450, and to leave pilot nano-structures 422, 424 in the writing layer 408 and reveal the pattern transfer layer 406 beneath. In another embodiment, the writing material layer 408 may comprise a negative photoresist or nanolithographic resist material such that the pilot nano-structures patterned in the writing layer 408 are retained following development by a suitable negative resist developer to remove the unexposed/unpatterned material surrounding the desired pilot nano-structures, for example. In a particular embodiment, tool 450 may comprise an EBL tool 450 such as a Raith eLine™ EBL system, for example, and writing layer 408 may be selected from known positive resist materials such as one or more polymeric positive resist materials such as PMMA, copolymer P(MMA-MAA), PMGI, EBR-9 resist material, ZEP resist materials, UV-3, UV-5 or Apex-E resist materials, for example, such that during writing step 400 desired pilot nano-structures 422, 424 are patterned by the EBL tool 450 and developed by a suitable positive resist developer to form pilot nano-structures 422, 424 in writing layer 408 revealing pattern transfer layer 406 beneath.
Referring now to
In one such embodiment, the controlled substantially isotropic etch may comprise a suitable selective etchant 510 which acts substantially isotropically in the pattern transfer material 506 to remove the pattern transfer material 506 substantially equally in all directions away from the pilot nano-structures 522, 524 through the writing layer 508. In such an embodiment, the geometry of the enlarged nano-structures 532, 534 undercut in the pattern transfer layer 506 may desirably be substantially similar to the geometry of the pilot nano-structures 522, 524 patterned in the writing layer 508, as illustrated in the exemplary embodiment shown in
In another embodiment, the controlled substantially isotropic etch may desirably comprise a suitable selective substantially isotropic etchant 510 which acts to remove the pattern transfer layer material 506 according to a defined rate of etching, such that the extent of undercutting of the pattern transfer layer material 506 by the etchant 510 may be desirably controlled. In such an embodiment, the substantially isotropic etch may desirably be controlled by at least one controllable parameter such as concentration or quantity of etchant 510, temperature of etch, time of etch and/or measurable/detectable extent of etch, which may be controlled by an operator or automated means during application of etchant 510. In such case, the pattern transfer and enlargement step of a method of fabrication may be desirably controlled to enlarge pilot nano-structures 522, 524 in writing layer 508 by a desired factor or extent, such as to result in a desired dimension and/or geometry of enlarged nano-structures 532, 534 in pattern transfer layer 506, for example.
Referring now to
In such an embodiment, the controlled lift-off undercutting etch may comprise any suitable etchant 610 which is selective for removal of the lift-off layer material 604 over writing layer, pattern transfer layer 606 and substrate layer 602 materials, for example. In one such embodiment, the controlled lift-off undercutting etch may comprise a suitable selective etchant 610 which acts substantially isotropically in the lift-off material 604 to undercut the lift-off material 604 substantially equally in all directions away from the enlarged nano-structures 632, 634 in the pattern transfer layer 606, as illustrated in the exemplary embodiment shown in
In another embodiment, the controlled lift-off undercutting etch may desirably comprise a suitable selective etchant 610 which acts to remove the lift-off layer material 604 according to a defined rate of etching, such that the extent of undercutting of the lift-off layer 604 by the etchant 610 may be desirably controlled. In such an embodiment, the lift-off undercutting etch may desirably be controlled by at least one controllable parameter such as concentration and/or quantity of etchant 610, temperature of etch, time of etch and/or measurable/detectable extent of etch, which may be controlled by an operator or automated means during application of etchant 610. In such case, the lift-off undercutting step of a method of fabrication may be desirably controlled to provide a desired dimension and/or geometry of lift-off structures 642, 644 in lift-off layer 604. In a particular embodiment, lift-off undercutting may be desirably controlled to provide a suitable undercut profile in lift-off layer 604 such as to provide for effective separation of lift-off layer 604 from enlarged nano-structures 632, 634 in pattern transfer layer 606 above so as to allow deposition of a mask material onto substrate material 602 without contacting lift-off material 604 within lift-off structures 642, 644, for example.
In an optional embodiment, lift-off undercutting step 600 may additionally comprise a further sub-step in which a preliminary etch may be applied to lift-off layer material 604 prior to the application of an at least partially isotropic selective lift-off undercut etchant 610, for example. In one such optional embodiment, the preliminary etch may comprise a substantially isotropic or a non-isotropic etch comprising application of a suitable etchant to etch at least a portion of the lift-off layer material 604 exposed through enlarged nano-structures 632, 634, so as to remove at least a portion of such lift-off layer material prior to the undercutting at least partically isotropic lift-off etch using etchant 610 as described above. In a particular such embodiment, the preliminary etchant may be applied so as to act in at least one of a substantially isotropic manner in all directions, in a direction parallel to the surface of substrate 602, and/or in a direction perpendicular to the surface of substrate 602, so as to etch at least a portion of lift-off material layer 604 prior to the application of at least partially isotropic lift-off 1 undercutting etchant 610 to undercut lift-off layer 604, as described above.
Referring now to
In one embodiment, the removal of a writing layer from pattern transfer layer 706 may be accomplished by any suitable chemical, thermal and/or physical means, and in a particular embodiment may be accomplished by application of a suitable wet chemical, gaseous and/or plasma etchant or solvent selective for the writing layer material over the pattern transfer layer 706, lift-off layer 704 or substrate 702 materials, for example.
Referring now to
Referring now to
In one embodiment, the removal of a lift-off layer 804 (and all remaining process layer materials on top of the lift-off layer) may be accomplished by any suitable chemical, thermal and/or physical means, and in a particular embodiment may be accomplished by application of a suitable wet chemical, gaseous and/or plasma etchant or solvent selective for the lift-off layer material over the substrate 902 or positive mask materials comprising the positive enlarged nano-structures 912, 914, for example.
Referring now to
In one embodiment, the directional anisotropic etch may comprise a reactive ion etch (RIE) comprising application of a suitable reactive ion etchant to the surface of the substrate 1002. In one such embodiment the suitable reactive ion etchant may desirably provide a direction of etch directed normal to the surface of the substrate 1002 such as to etch downward (as represented in
In one embodiment of the present invention, substrate pattern transfer step 1000 may comprise a final step of a method for fabrication for manufacturing enlarged nano-structures. In such an embodiment, raised out of plane enlarged nano-structures 1012, 1014 may comprise the desired final enlarged nano-structures to be produced on the surface of substrate 1002, and substrate 1002 comprising such enlarged nano-structures may consequently be used as a nano-structure shim or stamp, such as for nano-imprinting, for example.
In another optional embodiment of the present invention, a method of fabrication for manufacturing nano-structures may additionally comprise a further optional positive mask removal step 1100, such as illustrated in
In one embodiment, the removal of a positive mask layer comprising positive mask enlarged nanostructures 912, 914 may be accomplished by any suitable chemical, thermal and/or physical means, and in a particular embodiment may be accomplished by application of a suitable wet chemical, gaseous and/or plasma etchant or solvent selective for the positive mask layer material over the substrate 1102, for example.
Referring now to
Referring now to
In one embodiment of the present invention, the enlarged nano-structures 1332 in pattern transfer layer 1306 may be produced by a pattern enlargement step such as that described above with reference to
Referring now to
Referring now to
In another embodiment according to the present invention, a further method of fabrication for producing nano-structures on substrate surfaces is provided, comprising the following steps:
a) providing a suitable substrate material comprising a substrate, and process layers sequentially deposited on the substrate comprising a lift-off layer in contact with the substrate, a pattern transfer layer on top of the lift-off layer, and a writing layer on top of the pattern transfer layer;
b) patterning desired pilot nano-structures in the writing layer using a suitable patterning or writing tool, to reveal the pattern transfer layer underneath at the location of the pilot nano-structures;
c) transferring and enlarging the pilot nano-structures into the pattern transfer layer by applying a substantially isotropic etch selective for the pattern transfer layer material to undercut the pattern transfer layer leaving enlarged nano-structures in the pattern transfer layer at locations underneath the locations of the pilot nano-structures;
d) undercutting the lift-off layer using a lift-off etch selective for the lift-off layer material to create enlarged lift-off structures in the lift-off layer beneath the locations of the enlarged nano-structures in the pattern transfer layer to reveal the substrate underneath the locations of the enlarged nano-structures in the pattern transfer layer;
e) removing the writing layer to reveal enlarged nano-structures in the pattern transfer layer and optionally to also undercut enlarged lift-off structures in the lift-off layer revealing the substrate beneath; and
f) applying a directional anisotropic etch to the substrate through the enlarged nano-structures in the pattern transfer layer to produce final enlarged nano-structures etched into the surface of the substrate at locations underneath the locations of the enlarged nano-structures in the pattern transfer layer.
In one such embodiment of the invention, the desired completed nano-structures may comprise substantially in-plane or sub-planar (or “indented”) nano-structure features, such as nano-holes, or nano-slots or grooves, for example. In another such embodiment of the present invention, the steps a) to e) above may comprise substantially similar steps to the corresponding steps a) to e) of embodiments of the invention directed to producing out of plane nano-structures as detailed above with reference to
In a further optional embodiment, the above-described method comprising steps a) to f) may additionally comprise a further optional step comprising:
g) removing the remaining lift-off layer and pattern transfer layer to reveal the final enlarged nano-structures etched into the surface of the substrate.
In one such optional embodiment, the removal of the lift-off and pattern transfer layer materials may desirably reveal the substrate comprising final enlarged nano-structures etched into the substrate surface, such as may be desirable for some applications where the final enlarged nano-structures comprise nano-holes, nano-slots and/or nano-grooves and where it is desired to expose the entire surface of the substrate, such as for use of the substrate as a stamp or shim such as for nano-imprinting processes, or duplication of a master die, for example.
In further embodiments of the present invention, the fabrication of enlarged nano-structures according to the above-described methods may comprise producing at least one of: multiple regular grids or arrays of enlarged nano-structures comprising different nano-structure dimensions and/or spaces between nano-structures; irregular or non-rectangular grids or arrays of enlarged nano-structures such as hexagonal, octagonal or other geometrical arrays of nano-structures; multiple nested grids or arrays of nano-structures such as concentric, overlaid or interspaced grids or arrays of nano-structures having differing dimensions, shape and/or spacing; multiple regular grids or arrays of different configurations or shapes of enlarged nano-structures such as one or more of nano-pillars or columns, nano-cones, nano-wires, nano-domes, nano-ridges, nano-pyramids, nano-holes, elongated nano-holes, nano-slots and nano-grooves, for example. In yet a further embodiment of the present invention, the fabrication of enlarged nano-structures according to the above-described methods may comprise producing any desired combination, geometries or configurations of 2D (such as in-plane nano-structures) and/or 3D (such as out of plane nano-structures) nano-structures and/or grids or arrays thereof on a surface of a substrate in one single fabrication process, such as one of the exemplary fabrication methods according to the invention described above.
The above description of exemplary embodiments of the present invention, including what is described in the Abstract, is not intended to be exhaustive or to limit the embodiments of the invention to the precise forms disclosed above. Although specific embodiments and examples are described herein for illustrative purposes and to allow others skilled in the art to comprehend their teachings, various equivalent modifications may be made without departing from the scope of the disclosure, as will be recognized by those skilled in the relevant art.
