Claims
- 1. A method form forming a thin film on a substrate by thermal chemical vapor deposition, comprising the steps of:providing a substrate in a reaction chamber; providing a rectifying plate having a plurality of openings for passing a gas; mounting a head having a detachable gas liberating surface to a head for emitting a gas in the reaction chamber in opposition to a substrate surface such that the distance between the head and the substrate surface is 10 mm or less, the head having a plurality of plate members each having a surface intersecting the rectifying plate; feeding the gas to the head through the rectifying plate; and emitting the gas from the head into the reaction chamber.
- 2. The method according to claim 1, wherein the gas comprises a gas obtained by evaporating a liquid organic metal.
Priority Claims (5)
Number |
Date |
Country |
Kind |
3-345057 |
Dec 1991 |
JP |
|
3-345066 |
Dec 1991 |
JP |
|
4-338799 |
Dec 1992 |
JP |
|
4-338800 |
Dec 1992 |
JP |
|
4-338803 |
Dec 1992 |
JP |
|
Parent Case Info
This application is a division of application Ser. No. 08/675,537 filed Jul. 3, 1996 now U.S. Pat. No. 6,004,885 issued Dec. 21, 1999, which was a division of application Ser. No. 08/449,748 filed May 25, 1995 now U.S. Pat. No. 5,580,822 issued Dec. 3, 1996, which was a division of application Ser. No. 07/995,039 filed Dec. 22, 1992, now U.S. Pat. No. 5,447,568 issued Sep. 5, 1995.
US Referenced Citations (19)
Foreign Referenced Citations (5)
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Country |
0382987 |
Aug 1990 |
EP |
0419939 |
Apr 1991 |
EP |
0435088 |
Jul 1991 |
EP |
2195663 |
Apr 1988 |
GB |
9012900 |
Nov 1990 |
WO |