Claims
- 1. An improved method of manufacturing a magnetic disk wherein primary constituents from a sputter target are sputter deposited onto a substrate to form a ferromagnetic layer thereon such that oxygen is incorporated into said ferromagnetic layer, the improvement comprising:
- providing a sputtering target to which has been added an oxide of at least one of said primary constituents, such that said oxide is deposited with said primary constituents during sputtering in an amount not greater than 10 atomic percent of said primary constituents, and further such that substantially no other impurity elements or impurity compounds are present in the target;
- sputter depositing said primary constituents and said oxide of at least one of said primary constituents in a vacuum at a base pressure of not more than 2.8.times.10.sup.-7 Torr; and
- said method capable of manufacturing a ferromagnetic layer having a coercivity of not less that 1500 Oe and simultaneously a coercivity squareness of not less than 0.75.
- 2. The improved method of claim 1, wherein said primary constituents include at least one element selected from the group consisting of Co, Ni, Cr, Pt, Ti, Ta, B, Al, and W.
- 3. The improved method of claim 1, wherein said oxide is CoO.
- 4. An improved method of manufacturing a magnetic disk wherein primary constituents from a sputter target are sputter deposited onto a substrate to form a ferromagnetic layer thereon such that nitrogen is incorporated into said ferromagnetic layer, the improvement comprising:
- providing a sputtering target to which has been added a nitride of at least one of said primary constituents, such that said nitride is deposited with said primary constituents during sputtering in an amount not greater than 10 atomic percent of said primary constituents, and further such that substantially no other impurity elements or impurity compounds are present in the target;
- sputter depositing said primary constituents and said nitride of at least one of said primary constituents in a vacuum at a base pressure of not more than 2.8.times.10.sup.-7 Torr; and
- said method capable of manufacturing a ferromagnetic layer having a coercivity of not less that 1500 Oe and simultaneously a coercivity squareness of not less than 0.75.
- 5. The improved method of claim 4, wherein said primary constituents include at least one element selected from the group consisting of Co, Ni, Cr, Pt, Ti, Ta, B, Al, and W.
- 6. A method of controlling the coercivity of a ferromagnetic layer deposited in an apparatus for sputter deposition of selected primary constituents from a sputter target onto a substrate wherein base pressure of the apparatus varies during sputtering comprising the steps of:
- providing in said apparatus a sputter target containing at least one of said primary constituents and to which has been added an oxide of said at least one of said primary constituents in an amount not greater than 10 atomic percent of said primary constituents;
- sputter depositing said at least one of said primary constituents together with said oxide at a base pressure of not more than 2.8.times.10.sup.-7 Torr so as to provide said ferromagnetic layer with oxygen in an amount not greater than 10 atomic percent from said oxide; and
- said method capable of manufacturing a ferromagnetic layer having a coercivity of not less that 1500 Oe and simultaneously a coercivity squareness of not less than 0.75.
- 7. The method of claim 6, wherein said primary constituents include at least one element selected from the group consisting of Co, Ni, Cr, Pt, Ti, Ta, B, Al, and W.
- 8. The method of claim 6, wherein said oxide is CoO.
- 9. A method of controlling the coercivity of a ferromagnetic layer deposited in an apparatus for sputter deposition of selected primary constituents from a sputter target onto a substrate, wherein base pressure of the apparatus varies during sputtering comprising the steps of:
- providing in said apparatus a sputter target containing at least one of said primary constituents and to which has been added a nitride of said at least one of said primary constituents in an amount not greater than 10 atomic percent of said primary constituents;
- sputter depositing said at least one of said primary constituents together with said nitride at a base pressure of not more than 2.8.times.10.sup.-7 Torr so as to provide said ferromagnetic layer with nitrogen in an amount not greater than 10 atomic percent from said nitride; and
- said method capable of manufacturing a ferromagnetic layer having a coercivity of not less that 1500 Oe and simultaneously a coercivity squareness of not less than 0.75.
- 10. The method of claim 9, wherein said primary constituents include at least one element selected from the group consisting of Co, Ni, Cr, Pt, Ti, Ta, B, Al, and W.
Parent Case Info
The present application is a continuation of application Ser. No. 08/223,636, filed Apr. 6, 1994, now abandoned.
US Referenced Citations (13)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0531035 |
Mar 1993 |
EPX |
Continuations (1)
|
Number |
Date |
Country |
Parent |
223636 |
Apr 1994 |
|