BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1
a through 1j are cross-sectional views illustrating a method for forming a bump of a probe card in accordance with a first embodiment of the present invention.
FIGS. 2
a through 2n are cross-sectional views illustrating a method for forming a bump of a probe card in accordance with a second embodiment of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
The present invention will now be described in detail with reference to the accompanied drawings. The interpretations of the terms and wordings used in Description and Claims should not be limited to common or literal meanings. The embodiments of the present invention are provided to describe the present invention more thoroughly for those skilled in the art.
FIGS. 1
a through 1j are cross-sectional views illustrating a method for forming a bump of a probe card in accordance with a first embodiment of the present invention.
Referring to FIG. 1a, a protective film 110 is formed on a first surface of a semiconductor substrate 100. Preferably, the protective film 110 includes a thermal oxide film, a CVD oxide film or a TEOS film.
Referring to FIGS. 1b and 1c, a photoresist film 120 is formed on the protective film 110. Thereafter, a photoresist film pattern 120a is formed via a lithography process using a mask defining a bump region 140 (shown in FIG. 1g) where a bump 180 (shown in FIG. 1j) is to be formed.
Referring to FIG. 1d, the protective film 110 exposed by the photoresist film pattern 120a to form the protective film pattern 110a exposing the bump region 140.
Referring to FIG. 1e, a remaining portion of the photoresist film pattern 120a is removed.
Referring to FIG. 1f, a metal film 130 is formed on a second surface of the semiconductor substrate 100. Preferably, the metal film 130 comprises an Al film.
Referring to FIG. 1g, the semiconductor substrate 100 exposed by the protective film pattern 110a and the metal film 130 thereunder are etched to form the bump region 140. The exposed portion of the semiconductor substrate 100 and the metal film 130 thereunder are completely etched to form a through-hole.
Referring to FIG. 1h, the protective film pattern 110a and the metal film 130 are removed. Thereafter, an insulation film 150 is formed on an entire surface of the semiconductor substrate 100 including the bump region 140. Preferably, the insulation film 150 comprises an oxide film or a nitride film.
Referring to FIG. 1i, the semiconductor substrate 100 is bonded to a ceramic substrate 170. The ceramic substrate 170 may be a space transformer of the probe card (not shown). It is preferable that a bonding layer 160 is formed at an interface of the semiconductor substrate 100 and the ceramic substrate 170. The bonding layer 160 may be a photoresist film or an epoxy layer.
Referring to FIG. 1j, the bump region 140 is filled up to form a bump 180. Preferably, the bump 180 is formed via plating a nickel.
Although not shown, a cantilever beam may be attached to top portion of the bump 180.
FIGS. 2
a through 2n are cross-sectional views illustrating a method for forming a bump of a probe card in accordance with a second embodiment of the present invention.
Referring to FIG. 2a, a protective film 110 is formed on a first surface of a semiconductor substrate 100. Preferably, the protective film 110 includes a thermal oxide film, a CVD oxide film or a TEOS film.
Referring to FIGS. 2b and 2c, a photoresist film 120 is formed on the protective film 110. Thereafter, a photoresist film pattern 120a is formed via a lithography process using a mask defining a bump region 140 (shown in FIG. 2f) where a bump 190 (shown in FIG. 2m) is to be formed.
Referring to FIG. 2d, the protective film 110 exposed by the photoresist film pattern 120a to form the protective film pattern 10a exposing the bump region 140.
Referring to FIG. 2e, a remaining portion of the photoresist film pattern 120a is removed.
Referring to FIG. 2f, the semiconductor substrate 100 exposed by the protective film pattern 110a is etched to form the bump region 140. The exposed portion of the semiconductor substrate 100 is completely etched to form a through-hole.
Referring to FIG. 2g, an insulation film 150 is formed on an entire surface of the semiconductor substrate 100 including the bump region 140. Preferably, the insulation film 150 comprises an oxide film or a nitride film.
Referring to FIG. 2h, a glass layer 160 is bonded to each of the first surface and the second surface of the semiconductor substrate 100. Preferably, the bonding process comprises an anode bonding process.
Referring to FIG. 2i, a seed layer 170 is formed on a portion of the glass layer 160 on the first surface of the semiconductor substrate 100 and an inner surface of the bump region 140.
Referring to FIG. 2j, a second DFR (Dry Film Resist) 180 is formed on the second surface of the semiconductor substrate 100.
Referring to FIG. 2k, a first metal layer 190a is formed in the bump region 140. Preferably, the first metal layer 190a comprises a nickel layer.
Thereafter, the first surface of the semiconductor substrate 100 is polished via a CMP process until the glass layer 160 is exposed. When the semiconductor substrate 100 is thick, the bump region 140 may not be completely filled up as shown in FIG. 2k. Thereafter, the second DFR 180 is removed.
Referring to FIG. 21, a first DFR 200 is formed on the first surface of the semiconductor substrate 100 and a third DFR 210 exposing the bump region 140 is formed on the second surface of the semiconductor substrate 100.
Referring to FIG. 2m, a second metal layer 190b is formed in the bump region 140. Similar to the formation process of the first metal layer 190a, the second metal layer 190b may be formed by carrying out the nickel plating process to form a nickel layer and then planarizing the nickel layer via a CMP process.
Referring to FIG. 2n, a bonding layer 220 is formed on a surface of the ceramic substrate 170 corresponding to the bump 190. Preferably, the bonding layer 220 comprises a Sn layer, an AgSn layer or an AuSn layer. Thereafter, a remaining portion of the first DFR 200 is removed.
Thereafter, the semiconductor substrate 100 is bonded to a ceramic substrate 230. The ceramic substrate 230 may be a space transformer of the probe card (not shown).
Although not shown, a cantilever beam may be attached to top portion of the bump 190.
As described above, the method for forming the bump of the probe card in accordance with the present invention is advantageous in that the bump having a high aspect ratio for supporting a probe tip and a probe beam is formed using the semiconductor substrate as a mold without using the photoresist film.
Patent Application
20080047927
