Claims
- 1. A method for forming dielectric layers applied on a substrate, comprises steps of:providing a plurality of wiring lines above the substrate; forming a conformal liner layer on the wiring lines; and forming a dielectric layer on the liner layer using high density plasma chemical vapor deposition.
- 2. The method according to claim 1, wherein the liner layer comprises oxide.
- 3. The method according to claim 1, wherein the liner layer has a thickness of about 100-2000 Å.
- 4. The method according to claim 1, wherein the dielectric layer comprises oxide.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation application of, and claims the priority benefit of, U.S. application Ser. No. 09/752,470 filed on Jan. 2, 2001, now U.S. Pat. No. 6,562,731, which was a continuation of U.S. patent application Ser. No. 09/241,326, filed on Feb. 1, 1999, now U.S. Pat. No. 6,239,018.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
6218284 |
Liu et al. |
Apr 2001 |
B1 |
6239018 |
Liu et al. |
May 2001 |
B1 |
6562731 |
Liu et al. |
May 2003 |
B2 |
Continuations (2)
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Number |
Date |
Country |
Parent |
09/752470 |
Jan 2001 |
US |
Child |
10/397794 |
|
US |
Parent |
09/241326 |
Feb 1999 |
US |
Child |
09/752470 |
|
US |