Claims
- 1. A method for making a floating gate memory device, comprising the steps of:forming a floating gate; forming a control gate over the floating gate; forming a dielectric between the control gate and the floating gate, the dielectric comprising a discrete layer of silicon oxynitride formed on a layer of silicon oxide and a second layer of silicon oxide formed on the layer of silicon oxynitride.
- 2. A method for forming a floating gate memory device, comprising the steps of:forming a silicon substrate; forming a floating gate over the silicon substrate; forming a channel region in the substrate beneath the floating gate; forming a control gate over the floating gate; forming a dielectric between the control gate and the floating gate, the dielectric comprising a discrete layer of silicon oxynitride formed on a layer of silicon oxide and a second layer of silicon oxide formed on the layer of silicon oxynitride; and forming source and drain regions in the substrate adjacent to the channel region.
CROSS REFERENCE TO RELATED APPLICATIONS
This is a division of application Ser. No. 08/634,118 filed Apr. 17, 1996, now U.S. Pat. No. 5,780,891, which is a continuation-in-part of U.S. application Ser. No. 08/349,745 filed Dec. 5, 1994 entitled Nonvolatile Floating Gate Memory With Improved Interpoly Dielectric, now abandoned.
US Referenced Citations (13)
Non-Patent Literature Citations (2)
Entry |
S. Lim et al., Inhomogeneous dielectrics grown by plasma-enchanced chemical vapor deposition, Thin Solid Films, vol. 236 (1993), pp. 64-66, Oct. 1993. |
A. Sassella et al., Silicon oxynitride study by the tetrahedron model and by spectroscopic ellipsometry, Journal of Non-Crystalline Solids, vol. 187, pp. 396-402, Jul. 1995. |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
08/349745 |
Dec 1994 |
US |
Child |
08/634118 |
|
US |