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H01L29/511

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/511with a compositional variation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including compound and nitride members
- Patent number 12,218,232
- Issue date Feb 4, 2025
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,125,898
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Liang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS and PMOS transistor gates with hafnium oxide layers and lantha...
- Patent number 12,107,015
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method
- Patent number 12,074,207
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 12,068,316
- Issue date Aug 20, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yi-Wang Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing capacitance in field-effect transistors
- Patent number 12,057,488
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate trench field plate vertical MOSFET
- Patent number 12,034,074
- Issue date Jul 9, 2024
- Texas Instruments Incorporated
- Marie Denison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal cap on gate
- Patent number 12,021,148
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,009,409
- Issue date Jun 11, 2024
- United Microelectronics Corp.
- Chung-Fu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 12,009,401
- Issue date Jun 11, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device including work function adjusting metal gate s...
- Patent number 11,967,630
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Byoung Hoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with voltage resistant structure
- Patent number 11,929,394
- Issue date Mar 12, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing the same
- Patent number 11,917,827
- Issue date Feb 27, 2024
- Kioxia Corporation
- Naoki Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory devices and methods of fabri...
- Patent number 11,888,042
- Issue date Jan 30, 2024
- Samsung Electronics Co., Ltd.
- Kwang Soo Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including stack oxide materials having differ...
- Patent number 11,889,693
- Issue date Jan 30, 2024
- Srikant Jayanti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,777,030
- Issue date Oct 3, 2023
- Rohm Co., Ltd.
- Shuhei Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching devices having ferroelectric layers therein...
- Patent number 11,778,835
- Issue date Oct 3, 2023
- Samsung Electronics Co., Ltd.
- Byounghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,728,403
- Issue date Aug 15, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Yuzo Fukuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 11,721,733
- Issue date Aug 8, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate structure and method
- Patent number 11,699,735
- Issue date Jul 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,631,753
- Issue date Apr 18, 2023
- United Microelectronics Corp.
- Chung-Fu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric inner spacers in multi-gate field-effect transistors
- Patent number 11,626,505
- Issue date Apr 11, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,621,352
- Issue date Apr 4, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Chuan You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,610,992
- Issue date Mar 21, 2023
- Rohm Co., Ltd.
- Shuhei Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, memory cells and semiconductor constructions
- Patent number 11,594,611
- Issue date Feb 28, 2023
- Micron Technology, Inc.
- Durai Vishak Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory devices and methods of fabri...
- Patent number 11,588,032
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Kwang Soo Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy dielectric fin design for parasitic capacitance reduction
- Patent number 11,575,027
- Issue date Feb 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,575,039
- Issue date Feb 7, 2023
- Kabushiki Kaisha Toshiba
- Tatsuya Shiraishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,563,099
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,557,661
- Issue date Jan 17, 2023
- Tokyo Electron Limited
- Koichi Yatsuda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250054862
- Publication date Feb 13, 2025
- NANYA TECHNOLOGY CORPORATION
- Jen-I LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250054864
- Publication date Feb 13, 2025
- NANYA TECHNOLOGY CORPORATION
- Jen-I LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD FOR SEMICONDUCTOR STRUCTURE COMPRISING SUBSTRATE, FI...
- Publication number 20250022718
- Publication date Jan 16, 2025
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Huan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON-FREE LAMINATED HAFNIUM OXIDE/ZIRCONIUM OXIDE FILMS FOR FERRO...
- Publication number 20240395895
- Publication date Nov 28, 2024
- Entegris, Inc.
- Jun-Fei Zheng
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GATE STRUCTURE AND METHOD
- Publication number 20240387676
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming the Same
- Publication number 20240387686
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240387698
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Liang PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...
- Publication number 20240363442
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20240332385
- Publication date Oct 3, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL CAP ON GATE
- Publication number 20240313115
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET
- Publication number 20240304719
- Publication date Sep 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Marie DENISON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF REDUCING CAPACITANCE IN FIELD-EFFECT TRANSISTORS
- Publication number 20240297236
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH DEPOSITED GATE DIELECTRIC LAYERS
- Publication number 20240290879
- Publication date Aug 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240282843
- Publication date Aug 22, 2024
- UNITED MICROELECTRONICS CORP.
- Chung-Fu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS AND ELECTRONIC APP...
- Publication number 20240234031
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Narae HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME AND ELECTRONIC A...
- Publication number 20240213303
- Publication date Jun 27, 2024
- Samsung Electronics Co., Ltd.
- Boeun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUSES INCLUDING INSULATIVE STRUCTURES OF STACK STRUCTURES HAV...
- Publication number 20240196614
- Publication date Jun 13, 2024
- Lodestar Licensing Group LLC
- Srikant Jayanti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING CLOSELY SPACED GATE STRUCTURES OF A QUANTUM DO...
- Publication number 20240170559
- Publication date May 23, 2024
- IMEC vzw
- Sylvain Baudot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR, AND ELECTR...
- Publication number 20240170212
- Publication date May 23, 2024
- Samsung Electronics Co., Ltd.
- Jeonggyu SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH VOLTAGE RESISTANT STRUCTURE
- Publication number 20240128315
- Publication date Apr 18, 2024
- ROHM CO., LTD.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC-BASED ELECTRONIC DEVICE WITH IMPROVED GATE DIELECTRIC AND MANUF...
- Publication number 20240079455
- Publication date Mar 7, 2024
- STMicroelectronics S.r.l.
- Patrick FIORENZA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN...
- Publication number 20230403861
- Publication date Dec 14, 2023
- Samsung Electronics Co., Ltd.
- Byounghoon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230395713
- Publication date Dec 7, 2023
- Rohm Co., Ltd.
- Shuhei MITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230352555
- Publication date Nov 2, 2023
- Sony Semiconductor Solutions Corporation
- Yuzo FUKUZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURE AND METHOD
- Publication number 20230343847
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL CAP ON GATE
- Publication number 20230275156
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC INNER SPACERS IN MULTI-GATE FIELD-EFFECT TRANSISTORS
- Publication number 20230253478
- Publication date Aug 10, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230207668
- Publication date Jun 29, 2023
- UNITED MICROELECTRONICS CORP.
- Chung-Fu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230207669
- Publication date Jun 29, 2023
- UNITED MICROELECTRONICS CORP.
- Chung-Fu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming the Same
- Publication number 20230163191
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Hua Lee
- H01 - BASIC ELECTRIC ELEMENTS

with a compositional variation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device including compound and nitride members

Semiconductor device and manufacturing method thereof

NMOS and PMOS transistor gates with hafnium oxide layers and lantha...

Gate structure and method

Semiconductor device and method of forming the same

Methods of reducing capacitance in field-effect transistors

Trench gate trench field plate vertical MOSFET

Semiconductor device with metal cap on gate

Semiconductor device and method for fabricating the same

Memory transistor with multiple charge storing layers and a high wo...

Semiconductor device including work function adjusting metal gate s...

Semiconductor device with voltage resistant structure

Semiconductor memory device and method for manufacturing the same

Three-dimensional semiconductor memory devices and methods of fabri...

Semiconductor devices including stack oxide materials having differ...

Semiconductor device

Semiconductor switching devices having ferroelectric layers therein...

Semiconductor device

Memory transistor with multiple charge storing layers and a high wo...

Gate structure and method

Semiconductor device and method for fabricating the same

Dielectric inner spacers in multi-gate field-effect transistors

Semiconductor device and method of manufacturing the same

Semiconductor device

Transistors, memory cells and semiconductor constructions

Three-dimensional semiconductor memory devices and methods of fabri...

Dummy dielectric fin design for parasitic capacitance reduction

Semiconductor device

Semiconductor structure

Method for manufacturing semiconductor device

Patents Applicationslast 30 patents

ELECTRICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

ELECTRICAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

ETCHING METHOD FOR SEMICONDUCTOR STRUCTURE COMPRISING SUBSTRATE, FI...

CARBON-FREE LAMINATED HAFNIUM OXIDE/ZIRCONIUM OXIDE FILMS FOR FERRO...

GATE STRUCTURE AND METHOD

Semiconductor Device and Method of Forming the Same

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lantha...

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

SEMICONDUCTOR DEVICE WITH METAL CAP ON GATE

TRENCH GATE TRENCH FIELD PLATE VERTICAL MOSFET

METHODS OF REDUCING CAPACITANCE IN FIELD-EFFECT TRANSISTORS

FIELD-EFFECT TRANSISTORS WITH DEPOSITED GATE DIELECTRIC LAYERS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS AND ELECTRONIC APP...

CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME AND ELECTRONIC A...

APPARATUSES INCLUDING INSULATIVE STRUCTURES OF STACK STRUCTURES HAV...

METHOD FOR PRODUCING CLOSELY SPACED GATE STRUCTURES OF A QUANTUM DO...

CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR, AND ELECTR...

SEMICONDUCTOR DEVICE WITH VOLTAGE RESISTANT STRUCTURE

SIC-BASED ELECTRONIC DEVICE WITH IMPROVED GATE DIELECTRIC AND MANUF...

SEMICONDUCTOR SWITCHING DEVICES HAVING FERROELECTRIC LAYERS THEREIN...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

GATE STRUCTURE AND METHOD

SEMICONDUCTOR DEVICE WITH METAL CAP ON GATE

DIELECTRIC INNER SPACERS IN MULTI-GATE FIELD-EFFECT TRANSISTORS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Semiconductor Device and Method of Forming the Same