1. Field of the Invention
The invention relates to a method for making low threshold voltage (Vt) Gate-First Light-Reflective-Layer Covered Dual Metal-Gates on High-κ dielectric CMOSFETs Using Light-irradiation anneal. More particularly, the invention relates to a method for making low Vt Gate-First Dual Metal-Gates/High-κ CMOSFETs with laser or ultra-violate (UV) filtered Flash-light anneal.
2. Description of the Related Art
The toughest challenge for making metal-gate/high-κ CMOSFETs is to lower the undesired high Vt [1]*-[5]* (please refer to table 1 for detail prior arts [1]*-[6]*). Various high-κ dielectrics of Dy2O3/HfO2, HfSiON, HfSi(Al)ON, HfLaON, and HfLaO with various dual metal gates for p/n MOSFETs of TaCxN/TaCx, Ni31Si12NiSi, TiAlN/TaSiN, Ni3Si/NiSi2, and Ir3Si/TaN were used, but the Vt values are still high or can only demonstrated at larger equivalent-oxide thickness (EOT). This is especially hard for p-MOSFET, since only Ir and Pt in the Periodic Table have the needed high effective work-function (φm-eff) gate>5.2 eV [5]*. Previously the applicants showed the possible mechanism for high Vt related to the interface reaction and inter-diffusion of HfO2 and Si-channel during high temperature rapid-thermal anneal (RTA) [6]*. Since these interface reactions follow basic chemistry of Arrhenius temperature dependence, the low temperature processing will be the solution. This was confirmed by the low |Vt|<0.1 V in HfLaO CMOSFETs using <900° C. solid-phase diffusion (SPD) formed ultra-shallow junction (USJ) [6]*. However, this SPD formed USJ is not compatible with current VLSI fabrication process. In this invention, the USJ is formed by VLSI-compatible conventional ion-implantation with light-irradiation anneal, but the challenge is to lower flat band voltage (VFB) roll-off by high temperature under gate dielectric. A laser light anneal is used in the following to demonstrate the invention, although more general light-irradiation such as UV-filtered Flash-light anneal can also be used, but this invention is not intended to limit thereto.
To overcome the drawbacks of the prior arts, this invention proposes a method with simpler processes of ion implantation, light-irradiation anneal and light-reflective gate to achieve low Vt in metal-gate/high-κ CMOSFETs. At 1.05 nm EOT, the self-aligned and gate-first p- and n-MOSFETs of this invention showed proper effective work-function (φm-eff) of 5.04 and 4.24 eV, low Vt of −0.16 and 0.13 V, high mobility of 85 and 209 cm2/Vs and good 85° C. bias-temperature-instability (BTI) reliability. Using this novel very high-κ value TiLaO gate dielectric, desired low Vt of −0.07 and 0.12 V and high mobility of 82 and 203 cm2/Vs were achieved for respective p- and n-MOSFETs even at small EOT of 0.63 nm. This was realized using light-irradiation annealing on ion-implanted source-drain area and light-reflective Al-covered gate electrode. In this invention, Al reflects as high as 91% of the KrF excimer (248 nm wavelength) laser power irradiated to gate electrode as shown in the Reflectivity vs. light wavelength plot in
For the best understanding of this invention, please refer to the following detailed description of the preferred embodiments and the accompanying drawings, wherein:
In view of the drawbacks of the prior arts, this invention proposes a method for making low Vt Gate-First light-reflective-layer/dual-metal-gates/high-κ CMOSFETs which added a thin light-reflection layer on top of dual metal-gates.
Using laser annealing on source-drain and laser reflection at gate in
It is important to notice that the laser anneal/reflection process is the only art so far to scale the EOT down to 0.6 nm with proper Vt and VFB, where such small EOT is needed and listed in International Technology Roadmap for Semiconductors (ITRS) for the 22 nm node technology. This is further shown in the C-V characteristics of the TaN/TiLaO/p-Si capacitor shown in
TiLaOn+Si→SiOx+TiLaOn-x (x<2) (1)
This is because of the smaller κ of SiO2 (κ=3.9), which is significantly less than the TiLaO (κ˜50). Such reaction is possible due to the increasing bond enthalpy of 642, 799 and 800 kJ/mol for respective TiO2, La2O3 and SiO2. Such reaction is also possible for HfO2-based high-κ dielectric even though the bond enthalpy is slightly increased to 802 kJ/mol. The formed oxygen vacancy in both SiOx and TiLaOn-x (x<2) also explains the undesired VFB roll-off due to the charged dangling bands in the oxygen vacancy.
Although a preferred embodiment of the invention has been described for purposes of illustration, it is understood that various changes and modifications to the described embodiment can be carried out without departing from the scope of the invention as disclosed in the appended claims.