METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PATTERNING METHOD

Abstract

A method for manufacturing a semiconductor device is disclosed. The method includes forming a mask layer containing a first metal and a first halogen on a film to be processed. The method includes patterning the mask layer. The method includes performing a treatment on the mask layer to decrease the concentration of the first halogen. The method includes processing the film using the treated mask layer as a mask.

Description

Claims

1. A method for manufacturing a semiconductor device comprising: forming, on a film, a mask layer containing a first metal and a first halogen;patterning the mask layer;performing a treatment on the mask layer to decrease a concentration of the first halogen; andprocessing the film using the treated mask layer as a mask.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the first metal includes tungsten, and the first halogen includes fluorine.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the treatment includes a heat treatment.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the treatment includes a heat treatment in an atmosphere containing a first substance having a binding energy to the first halogen that is higher than a binding energy of the first metal to the first halogen.

5. The method for manufacturing a semiconductor device according to claim 4, wherein the first metal includes tungsten, and the first halogen includes fluorine.

6. The method for manufacturing a semiconductor device according to claim 1, further comprising: before the treatment, forming a material film in contact with the mask layer, the material film containing a second substance having a binding energy to the first halogen that is higher than a binding energy of the first metal to the first halogen.

7. The method for manufacturing a semiconductor device according to claim 6, further comprising: after the treatment, selectively removing the material film.

8. The method for manufacturing a semiconductor device according to claim 6, wherein the first metal includes tungsten, the first halogen includes fluorine, and the second substance includes titanium and nitrogen.

9. The method for manufacturing a semiconductor device according to claim 1, further comprising: before forming the mask layer, alternately stacking a first film and a second film to form the film.

10. The method for manufacturing a semiconductor device according to claim 1, further comprising: forming the mask layer on the film by chemical vapor deposition (CVD) using a gas containing an element of the first metal and an element of the first halogen.

11. The method for manufacturing a semiconductor device according to claim 1, further comprising: forming the mask layer on the film by physical vapor deposition (PVD) using a film-forming material containing an element of the first metal and an element of the first halogen.

12. The method for manufacturing a semiconductor device according to claim 1, further comprising: forming the mask layer on the film, the mask layer containing the halogen in a concentration equal to or higher than a first predetermined concentration; andperforming the treatment so that the concentration of the first halogen in the mask layer is equal to or less than a second predetermined concentration that is lower than the first predetermined concentration.

13. A patterning method comprising: forming, on a film, a mask layer containing a first metal and a first halogen on a film; patterning the mask layer;performing a treatment on the mask layer to decrease a concentration of the first halogen; andpatterning the film using the treated mask layer as a mask.

14. The patterning method according to claim 13, wherein the first metal includes tungsten, and the first halogen includes fluorine.

15. The patterning method according to claim 13, wherein the treatment includes a heat treatment in an atmosphere containing a first substance having a binding energy to the first halogen that is higher than a binding energy of the first metal to the first halogen.

16. The patterning method according to claim 13, further comprising: before the treatment, forming a material film in contact with the mask layer, the material film containing a second substance having a binding energy to the first halogen that is higher than a binding energy of the first metal to the first halogen.

17. The patterning method according to claim 16, further comprising: after the treatment, selectively removing the material film.