A method for manufacturing a semiconductor device according to embodiments of the present invention will be described with reference to the accompanying drawings.
In the description of embodiments, it will be understood that when a layer (or film) is referred to as being ‘on’ another layer or substrate, it can be directly on the another layer or substrate, or intervening layers may also be present. Accordingly, when a layer is referred to as being “directly on” another layer or substrate, no intervening layer is present.
Referring to
Referring to
Referring to
Accordingly, a the semiconductor protrusion portion 110 is formed as illustrated in
Next, referring to
The oxide layer 200 can be formed by performing a wet oxidation on the semiconductor substrate 100. In one embodiment, the wet oxidation is performed by injecting vapor (H2O) for a short time at high temperature of about 900-1100° C.
Here, 40-50% of the oxide layer 200 formed through the wet oxidation is formed inside the semiconductor substrate 100, and the rest of the oxide layer 200 is formed on the outside of the semiconductor substrate 100. That is, oxidation of the amorphous silicon of the substrate 100 occurs such that as the oxide layer forms on the substrate, a portion of the substrate becomes part of the oxide layer 200.
Therefore, the semiconductor protrusion portion 110 becomes a second width d2 narrower than the first width d1 through the generation of the oxide layer 200.
Referring to
Referring to
That is, a first portion 210 of the oxide layer 200 grown from the lateral sides of the semiconductor protrusion portion 110, and a second portion 220 of the oxide layer 200 grown from the upper surface of the substrate 100 remain.
Subsequently, the oxide layer 200 where the first portion 210 and the second portion 220 remain is blanket-etched. The etching process can be reactive ion etching (RIE), and is performed until the second portion 220 of the oxide layer 200 is completely removed.
Since the RIE is performed in a vertical direction, the width of the first portion 210 does not reduce, and the first and the second portions 210 and 220 are etched in only a height direction.
That is, the first portion 210 of the oxide layer 200 is etched by the height of the second portion 220.
Therefore, referring to
Next, referring to
In an embodiment, after the metal 400 is deposited, the first portions 210 of the oxide layer 200 can be removed through an etching solution.
At this point, the first portions 210 of the oxide layer 200 can be removed using a lift-off operation. The portion of the metal 400 remaining on the first portions 210 is removed together with the oxide, and a portion of the metal 400 between the first portions remains.
Therefore, as illustrated in
At this point, the first and second metal lines ‘a’ and ‘b’ can have different widths, depending on the separation distance of the photoresist patterns 310 having the first width d1.
For example, assuming that the separated distance between adjacent photoresist patterns 310 is d3, the thickness of the oxide layer 200 can be given as x, the thickness of the oxide layer 200 formed on the semiconductor substrate 100 and inside the semiconductor protrusion portion 110 is x1, and the thickness of the oxide layer 200 formed outside of the semiconductor protrusion portion 110 is x2, where x=x1+x2. [0040] In addition, assuming that the width of the first metal line ‘a’ is d2, which is the second width as illustrated in
As described above, according to an embodiment, a semiconductor device can be miniaturized by forming the line of the semiconductor device smaller than the width between photoresist patterns defining a semiconductor protrusion portion.
Any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc., means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment. Further, when a particular feature, structure, or characteristic is described in connection with any embodiment, it is submitted that it is within the purview of one skilled in the art to effect such feature, structure, or characteristic in connection with other ones of the embodiments.
Although embodiments have been described with reference to a number of illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure. More particularly, various variations and modifications are possible in the component parts and/or arrangements of the subject combination arrangement within the scope of the disclosure, the drawings and the appended claims. In addition to variations and modifications in the component parts and/or arrangements, alternative uses will also be apparent to those skilled in the art.
Number | Date | Country | Kind |
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10-2006-0066835 | Jul 2006 | KR | national |