Claims
- 1. A method for forming a semiconductor device comprising the steps of:providing a substrate; forming a coating on the substrate including a photosensitive composition which contains a carboxylic acid structure on the substrate; irradiating the coating in a pattern through a phase-shifting mask to render a portion of the carboxylic acid structure, contained in the photosensitive composition, into a lactone structure by using light having a wavelength of not more than 250 nm.
- 2. A method for forming a semiconductor device according to claim 1, wherein the light is generated by an ArF excimer laser.
- 3. A method for forming a semiconductor device according to claim 1, wherein the phase-shifting mask is a Levenson type phase-shifting mask.
- 4. A method for forming a semiconductor device comprising steps of:providing a substrate; forming an insulation region on the substrate; forming a conductive film on the substrate; forming a resist film which includes a photosensitive composition containing a carboxylic acid structure; irradiating the resist film in a pattern to render a portion of the carboxylic acid structure, contained in the photosensitive composition, into a lactone structure by using light having a wavelength of not more than 250 nm; developing the resist film, thereby forming a resist pattern; etching the conductive film using the resist pattern as a mask, thereby forming a gate electrode.
- 5. A method for forming a semiconductor device according to claim 4, wherein the light is generated by an ArF excimer laser.
- 6. A method for forming a semiconductor device according to claim 4, wherein the resist film is irradiated through a phase-shifting mask.
- 7. A method for forming a semiconductor device according to claim 4, wherein the phase-shifting mask is a Levenson type phase-shifting mask.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-210360 |
Aug 1997 |
JP |
|
Parent Case Info
This is a continuation application of U.S. Ser. No. 09/432,797, filed Nov. 3, 1999, now U.S. Pat. No. 6,156,486, which is a continuation application of U.S. Ser. No. 09/086,610, filed May 29, 1998, now U.S. Pat. No. 6,017,680.
US Referenced Citations (6)
Number |
Name |
Date |
Kind |
4942113 |
Trundle |
Jul 1990 |
A |
5071730 |
Allen et al. |
Dec 1991 |
A |
5910392 |
Nozaki et al. |
Jun 1999 |
A |
6017680 |
Hattori et al. |
Jan 2000 |
A |
6027856 |
Nozaki et al. |
Feb 2000 |
A |
6156486 |
Hattori et al. |
Dec 2000 |
A |
Foreign Referenced Citations (11)
Number |
Date |
Country |
62-164045 |
Jul 1987 |
JP |
3-179355 |
Aug 1991 |
JP |
4-396359 |
Feb 1992 |
JP |
4-165359 |
Jun 1992 |
JP |
4-184345 |
Jul 1992 |
JP |
4-226461 |
Aug 1992 |
JP |
5-80515 |
Apr 1993 |
JP |
5-257284 |
Oct 1993 |
JP |
5-265212 |
Oct 1993 |
JP |
7-28237 |
Jan 1995 |
JP |
8-259626 |
Oct 1996 |
JP |
Non-Patent Literature Citations (2)
Entry |
Y. Tsuchiya et al, “Investigation of Acid-Catalyzed Insolubilization Reactions for Alicyclic Polymers with Carboxyl Groups”, Journal of Photopolymer Science and Technology, vol. 10, No. 4, 1997, pp. 579-584. |
F.M. Houlihan et al., “Synthesis of Cycloolefin-Maleic Anhydride Alternating Coppolymers for 193 nm Imaging”, Macromolecules, 1997, 30, pp. 6517-6524. |
Continuations (2)
|
Number |
Date |
Country |
Parent |
09/432797 |
Nov 1999 |
US |
Child |
09/649592 |
|
US |
Parent |
09/086610 |
May 1998 |
US |
Child |
09/432797 |
|
US |