K. Fujino et al., "Surface Modification of Base Materials for TEOS/O.sub.3 Atmospheric Pressure Chemical Vapor Deposition", 1046 Journal of the Electrochemical Society Bd. 139(1992) Jun., No. 6, Manchester, N.H., US, pp. 1690-1692. |
IBM Technical Disclosure Bulletin, "Sidewall Channel-Stop Doping For Deep-Trench Isolation of FET Devices", vol. 27, No. 10A Mar. 1985, pp. 5501-5504. |
"Sidewall Channel-Stop Doping for Deep-Trench Isolation of FET Devices", IBM Technical Disclosure Bulletin, vol. 27, No. 10A, Mar. 1985, pp. 5501-5504. |
"Voidless Final Closure Process for Polysilicon Trench", IBM Technical Disclosure Bulletin, vol. 28, No. 10, Mar. 1986, pp. 4594-4595. |
"New 500V Output Device Structures for Thin Silicon Layer on Silicon Dioxide Film", A. Nakagawa, et al., Toshiba Research & Dev. Center Electronics Center, Proc. of 1990 pp. 97-101. |
"Evaluation of Dislocation Generation in U-Groove Isolation", Tamaki et al., J. Electrochem. Soc. Solid State Science and Technology, Mar. 1988, pp. 726-730. |