In some instances, an illumination system for a projection exposure apparatus shapes and uniformly illuminates the object field of a projection objective. In addition, the illumination system may also shape the pupil of the projection objective and, while complying with fixed pupil positions, fill it with light in a relatively uniform manner. The pupil filling can vary depending on the application.
In some embodiments, the disclosure provides a method for producing mirror facets for a facet mirror which permits the economic production of mirror facets with high angular accuracy and at the same time low surface roughness. In certain embodiments, the disclosure provides projection exposure apparatuses, in particular for EUV lithography, which are equipped with mirrors having positive optical properties.
In some emeobidments, an EUV projection exposure apparatus has a facet mirror that includes mirror facets arranged on carrying elements. The mirror facets can have a thickness of less than 2 mm, such as within the range of 0.2 mm-1.2 mm. The carrying elements can be a basic body common to a plurality of mirror facets or else intermediate pieces or so-called bottom facets, which are connected to a carrier body. The small thickness of the mirror facets has the effect that the mirror facets can exhibit shape flexibility and can be adapted within certain limits to the shape of the carrying element on which they are arranged. Possible shape deviations of the mirror facets that originate from the fabrication process can be compensated for in this way, without certain optical properties, such as the reflectivity and the surface quality of the mirror facets, being impaired thereby.
In some embodiments, the connection of the mirror facets to the carrying elements can be achieved by a soldering layer having a thickness within the range of 2-10 μm, such as within the range of 3-7 μm. The thinner the soldering layer is made, the better the heat transfer can be between the mirror facet and the carrying element and cooling devices possibly present. Since the facet mirror is operated in a vacuum, cooling via the carrying element can be highly desirable because, otherwise, thermal energy may be dissipated to the surroundings only by way of radiation but not by way of convection.
In certain embodiments, the mirror facets can be connected to the carrying elements by an inorganic layer containing silicon oxide bridges. Such a layer can be produced by the so-called “low-temperature bonding” method. In this method, the joining partners can be brought into contact using a basic solution, e.g. a KOH solution, and SiO2, whereby the silicon oxide bridges are formed.
In some embodiments, the mirror facets can also be connected to the carrying elements by a bonding or an adhesive layer.
The mirror facets can have a reflective surface with a multilayer, such as a multilayer including Mo/Si double layers.
A multilayer can have approximately 10-80, such as 50 double layers. The thickness of a Mo/Si double layer can be 6.8-15 nm, and the thickness of a Mo layer can be 1.3 nm-12 nm. The total thickness of a double layer can vary perpendicular to the layer course of the multilayer. This can provides a so-called “chirp”. This can reduce the angle dependence of the reflectivity of the multilayer, although this could be detrimental of the total reflectivity.
At least two mirror facets can be connected to a common, integral basic body, which in this case can serve as a carrying element. The basic body can have differently oriented areas for receiving the mirror facets. Moreover, the connection to the basic body can be formed by suitably dimensioned intermediate pieces as carrying elements.
In some embodiments, all the mirror facets of the facet mirror can be arranged on a common, integral basic body.
The basic body can be composed of the same material as the uncoated mirror facet. In some cases, the basic body can be at least partly composed of Si.
The mirror facet can furthermore be composed of an optically polishable material, in which a surface roughness of less than 0.5 nm rms, such as less than 0.2 nm rms, can be achieved in the high spatial frequency (HSFR) range. In this case, the carrying element can be composed of a material having a thermal conductivity of at least 100 W/(mK), such as a metallic material or SiC.
By way of example, the mirror facets can contain Si, SiO2, NiP or NiP-coated metal or SiC.
In certain embodiments, the facet mirror is arranged in the illumination system of the EUV projection exposure apparatus.
Cavities, such as in the form of grooves, can be formed in the region between the mirror facet and the carrying element. Optionally, the cavities can be connected to coolant lines.
In some embodiments, the disclosure provides an EUV projection exposure apparatus having a mirror element arranged on a carrying element. The mirror element can be composed of an optically polishable material, in which a surface roughness of 0.5 nm rms, such as 0.1 nm rms, can be achieved in the high spatial frequency (HSFR) range. The carrying element can be composed of material having a thermal conductivity of at least 100 W/(mK), such as a metallic material or SiC.
The mirror element can be a mirror facet formed as part of a facet mirror arranged in the illumination system of the apparatus.
The mirror element can contain Si, for example. The mirror element can have a thickness within the range of 0.2-5 mm, such as within the range of 1-3 mm. In some embodiments, the mirror element can also be formed as a nickel-coated steel body.
The carrying element can be arranged on a carrier body that is movable, such as tiltable, with respect to the carrier body.
The carrying element and the carrier body can be formed from the same material, such as from a steel (e.g., invar). This can help ensure an improved heat transfer from the carrying element to the carrier body. The carrying element and the carrier body can be polished in the region of their respective contact areas. Fabrication of the carrier body and/or the carrying element from Cu or Al is also possible.
The heat transfer between the mirror element and the carrying element can be enhanced by the mirror element and the carrying element being connected to one another by a soldering connection. In some embodiments, this involves the mirror elements being connected to the carrying elements by an inorganic layer containing silicon oxide bridges. Such a layer can be produced, for example, by a low-temperature bonding method. In the method, the joining partners are brought into contact using a basic solution, such as a KOH solution, and SiO2, whereby the silicon oxide bridges are formed.
A reduction of the influence of the different coefficients of thermal expansion of mirror element and carrying element can be achieved, for example, by cavities, such as grooves, in the region between the mirror element and the carrying element. With such an arrangement, the mirror element and the carrying element are connected to one another not over the whole area, but rather via webs or pillar-like projections. The webs or projections have the effect that the deformations that arise on account of the different coefficients of thermal expansion in the arrangement do not reach, or reach only to a reduced extent, the optically active surface of the mirror element, but rather are essentially absorbed by a deformation of the webs or projections.
The cavities produced in this way can be connected to coolant lines, whereby an active cooling of the arrangement is made possible.
In certain embodiments, a mirror element can be wedge-shaped or spherical fashion. This can provide, for example, the possibility of setting an angular offset beforehand, for example, as early as during production. The desire for tiltability with respect to the carrier body can be reduced in this way, for example, for selected mirror elements on their carrying elements.
The mirror element can be a substantially circular lamina having a diameter within the range of between 2 mm-15 mm, such as within the range of between 8 mm-12 mm.
In some embodiments, to help reduce the effect of temperature changes on the optically active surface of the mirror element, the mirror element and the carrying element can be connected to one another by a connecting layer composed of a connecting material having a modulus of elasticity of <70 MPa. In this case, the connecting layer can act in the manner of an expansion joint. Particularly in combination with the cavities mentioned above, it is thus possible to achieve further improved deformation decoupling.
The mirror elements can have a reflective surface with a multilayer, such as composed of Mo/Si double layers. The multilayer has approximately 10-80, such as 50 double layers. The thickness of a Mo/Si double layer can be 6.8-15 nm. The thickness of a Mo layer is 1.3 nm-12 nm.
In certain embodiments, the disclosure provides a method for producing overall facets for a facet mirror. The method includes fabricating the mirror facets in each case separately from one another as mirror facets and bottom facets. The mirror facets acquire a polished surface and are arranged on a basic body by a bottom facet. The angular orientation of the polished surface with respect to a reference area of the basic body is predetermined. The desired accuracy of the angular orientation can be achieved by performing a measurement of the angular orientation of a mirror facet and subsequently providing a matching bottom facet.
The matching bottom facet can be selected from a plurality of prefabricated bottom facets by an angle measurement or be fabricated in a manner adapted to the geometry of the mirror facet.
The bottom facets and the mirror facets can be connected to one another to form overall facets by a bonding method.
It is also possible to connect the bottom facets to the basic body by a bonding method.
The overall facets can be connected to form blocks by a bonding method, such as, prior to mounting on the basic body. The angular orientation of the polished surfaces of the mirror facets can be measured after the overall facets have been connected to form blocks.
It can be advantageous if that area of the bottom facet which faces the mirror facet contains a larger area than that area of the mirror facet which faces the bottom facet.
For the basic body it is possible to choose the same material as for the mirror or bottom facet, which can in particular also be formed in arcuate fashion. For example, the basic body, the mirror facet or the bottom facet can contain silicon.
The mirror facet can have a thickness of less than 2 mm, such as within the range of 0.2 mm-1.2 mm.
The mirror facet can be composed of an optically polishable material in which a surface roughness of less than 0.5 nm rms, such as less than 0.2 nm rms, can be achieved in the high spatial frequency (HSFR) range. The bottom facet can be composed of a material having a thermal conductivity of at least 100 W/(mK), such as a metallic material.
Cavities, such as grooves, can be formed in the region between the mirror facet and the bottom facet. The cavities can be connected to coolant lines.
Method disclosed herein can allow for the production of facet mirrors to be simplified considerably and thus to be made less expensive.
Exemplary embodiments of the disclosure are explained in more detail below with reference to the drawings, in which:
In some embodiments, the groove-type cutouts 209 are worked from the mirror facet 210 as illustrated, for example, in
The variants illustrated in
For illustrating the geometrical relationships of a further variant of the disclosure,
In the example shown in
During the fabrication of the bottom facets 4 and 4′ and the mirror facets 3 and 3′, respectively, the angles of the finally processed areas vary in Gaussian fashion around a desired angle in the case where a relatively large number of facets are fabricated. The corresponding distribution of the angles of the surfaces is illustrated schematically in
In this case, the polished surfaces 7 of the mirror facets 3 and 3′ can be produced by a comparatively large mirror being polished and the arcuate mirror facets being cut out from the mirror by erosion. As an alternative, finished cut-to-size arcuate facets can be arranged in densely packed fashion on a polishing carrying body and subsequently be polished jointly; this method affords the advantage that it is considerably more cost-effective than the method described previously.
Some embodiments can involve first selecting a mirror facet 3 or 3′ and accurately measuring it with regard to its angular orientation. It is then possible to define the angles with which the surfaces of the associated bottom facet 4 or 4′, respectively, have to be fabricated in order to ensure a correct orientation of the polished surface 7 with respect to the reference area of the basic body 8 as a result. The bottom facet 4 or 4′ can then be ground with an accuracy of a few tens of seconds in such a way as to produce the matching angle.
For further illustration,
After the pairs of mirror and bottom facets 3, 3′, 4, 4′ have been provided, these are combined to form overall facets using a bonding method. Such methods can be used very well for crystals such as silicon, in particular; this results in a very fixed, permanent connection having good thermal conductivity. The mirror facets can be coated prior to being combined to form overall facets or else at some other suitable point in time in the process. The overall facets are then combined to form blocks 9, as are illustrated in
Number | Date | Country | Kind |
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102007008448.1 | Feb 2007 | DE | national |
This application is a continuation of, and claims priority under 35 USC 120 to, U.S. application Ser. No. 12/504,844, filed Jul. 17, 2009, which claims benefit under 35 USC 120 to, international application PCT/EP2008/001247, filed Feb. 18, 2008, which claims benefit of German Application No. 10 2007 008 448.1, filed Feb. 19, 2007. U.S. application Ser. No. 12/504,844 and international application PCT/EP2008/001247 are hereby incorporated by reference in their entirety. The disclosure relates to facet mirrors, methods for producing facets for a facet mirror and to related facet mirrors, as well as projection exposure apparatuses and illumination systems for projection exposure apparatuses in semiconductor lithography. Facet mirrors of this type can be used for producing specific spatial illumination distributions in illumination systems for EUV projection exposure apparatuses at a working wavelength of 13 nm.
Number | Date | Country | |
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Parent | 12504844 | Jul 2009 | US |
Child | 13683138 | US | |
Parent | PCT/EP2008/001247 | Feb 2008 | US |
Child | 12504844 | US |