Claims
- 1. A method of forming a semiconductor device, comprising the steps of:providing an oxide region over a semiconductor body; depositing a further layer over said oxide region and said semiconductor body in a chamber using plasma enhanced deposition with an RF power sufficient to generate a plasma at a pressure above about 1.2 Torr; after said depositing step, maintaining a pressure in said chamber sufficient to permit bleeding off of charges on said oxide layer and concurrently reducing said RF power supplied to the chamber to a sufficiently low level to avoid further build up of charge on said oxide layer; and then further lowering said RF power to a power level below the power level required to generate said plasma while maintaining said pressure sufficient to cause bleeding off of charges on said oxide layer.
- 2. The method of claim 1, wherein said oxide is a gate oxide.
- 3. The method of claim 2, wherein said further layer is a TEOS layer.
- 4. The method of claim 3, wherein said pressure sufficient to cause bleeding off of charges on said oxide layer is 1.2 Torr.
- 5. The method of claim 2, wherein said pressure sufficient to cause bleeding off of charges on said oxide layer is 1.2 Torr.
- 6. The method of claim 1, wherein said further layer is a TEOS layer.
- 7. The method of claim 6, wherein said pressure sufficient to cause bleeding off of charges on said oxide layer is 1.2 Torr.
- 8. The method of claim 1, wherein said pressure sufficient to cause bleeding off of charges on said oxide layer is 1.2 Torr.
- 9. The method of claim 1, wherein said power level is 50 watts.
- 10. The method of claim 1 wherein a power lift step to release said semiconductor body from any electrostatic bonding is performed during said maintaining step.
- 11. A method of forming a semiconductor device, comprising the steps of:providing a gate oxide over a semiconductor body; forming a gate electrode over said gate oxide; depositing a layer over said gate electrode and said semiconductor body in a chamber using a RF power supplied to the chamber to generate a plasma at a pressure above about 1.2 Torr; after said depositing step, maintaining said pressure in said chamber sufficient to permit bleeding off of charges on said oxide layer and concurrently reducing said RF power to a sufficiently low level to avoid further build up of charge on said oxide layer; and then further reducing said RF power below the power level required to generate said plasma while maintaining said pressure sufficient to cause bleeding off of charges on said oxide layer.
- 12. The method of claim 11, wherein said layer is a TEOS layer.
- 13. The method of claim 12, wherein said pressure sufficient to cause bleeding off of charges on said oxide layer is 1.2 Torr.
- 14. The method of claim 11, wherein said pressure sufficient to cause bleeding off of charges on said oxide layer is 1.2 Torr.
- 15. The method of claim 11, wherein said specified power level is 50 watts.
- 16. The method of claim 11 wherein a power lift step to release said semiconductor body from any electrostatic bonding is performed during said maintaining step using a duration on the order of 20 seconds, an RF power on the order of 50 watts and a temperature on the order of 390° C.
- 17. A method of forming a semiconductor device, comprising the steps of:providing a gate oxide region over a semiconductor body; forming a gate electrode over said gate oxide region; forming sidewall spacers adjacent said gate electrode; and depositing an oxide layer over said gate electrode and semiconductor body by: placing said semiconductor body in a plasma enhanced deposition chamber; supplying a RF power to the chamber at a first power level to generate a plasma; pressurizing said chamber to a first specified pressure level above about 1.2 Torr; depositing the oxide layer using plasma enhanced deposition while maintaining said pressure level above about 1.2 Torr; maintaining the pressure in said chamber above 1.2 Torr and concurrently reducing the RF power to a second power level sufficiently low to avoid build up of charge on said oxide layer; then performing a power lift step to release said semiconductor body from any electrostatic bonding; and then, further reducing said RF power to a power level below the power level required to generate said plasma.
- 18. The method of claim 17, wherein said oxide layer is formed using TEOS.
- 19. The method of claim 17, wherein said second specified power level is 50 watts.
Parent Case Info
This application claims the benefit of Provisional No. 60/020,002 filed Jun. 21, 1996.
US Referenced Citations (7)
Provisional Applications (1)
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Number |
Date |
Country |
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60/020002 |
Jun 1996 |
US |