METHOD FOR REDUCING POLISH-INDUCED DAMAGE IN A CONTACT STRUCTURE BY FORMING A CAPPING LAYER

Abstract

By forming a capping layer after a CMP process for planarizing the surface topography of an ILD layer, any surface irregularities may be efficiently sealed, thereby reducing the risk for forming conductive surface irregularities during the further processing. Consequently, yield loss effects caused by leakage paths or short circuits in the first metallization layer may be significantly reduced.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The invention may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:

FIGS. 1 a-1d schematically illustrate cross-sectional views of a semiconductor device during the formation of contact plugs according to conventional process strategies, thereby resulting in metal-filled surface irregularities;

FIGS. 2 a-2d schematically illustrate cross-sectional views of a semiconductor device during various manufacturing stages for forming a contact plug by using a capping layer after a CMP process according to illustrative embodiments of the present invention;

FIGS. 3 a-3c schematically illustrate cross-sectional views of a semiconductor device during the formation of a planar interlayer dielectric material with a reduced number of surface irregularities according to still further illustrative embodiments of the present invention; and

FIGS. 4 a-4b schematically illustrate cross-sectional views of a semiconductor device during the formation of a planar interlayer dielectric with a reduced number of surface irregularities according to still further illustrative embodiments of the present invention.

Claims

1. A method, comprising: forming a first dielectric layer above a circuit element having a contact region;planarizing said first dielectric layer;forming a second dielectric layer on said planarized first dielectric layer; andforming a contact plug at least in said first dielectric layer, said contact plug connecting to said contact region.

2. The method of claim 1, further comprising forming a contact etch stop layer above said circuit element, wherein said first dielectric layer is formed on said contact etch stop layer.

3. The method of claim 1, wherein a thickness of said first dielectric layer is greater than a thickness of said second dielectric layer.

4. The method of claim 1, wherein a thickness of said first dielectric layer is less than a thickness of said second dielectric layer.

5. The method of claim 1, wherein at least a portion of said second dielectric layer is removed when forming said contact plug.

6. The method of claim 1, wherein planarizing said first dielectric layer comprises performing a chemical mechanical polishing process.

7. The method of claim 6, wherein forming said second dielectric layer comprises depositing substantially the same dielectric material as is used for forming said first dielectric layer.

8. The method of claim 6, wherein said first dielectric layer is deposited with dielectric material with a first thickness selected to provide excess material for planarizing a surface topography by chemical mechanical polishing, and wherein said second dielectric layer is formed by further depositing said dielectric material to a predefined target height.

9. The method of claim 1, wherein forming said second dielectric layer comprises applying said second dielectric layer in a low viscous state, curing said second dielectric layer and removing said second dielectric layer and a surface portion of said first dielectric layer.

10. The method of claim 9, wherein said second dielectric layer and said surface portion of said first dielectric layer are removed by an etch process.

11. A method, comprising: forming a dielectric layer above a circuit element of a semiconductor device;planarizing said dielectric layer by a chemical mechanical polishing process;forming a capping layer on said planarized dielectric layer for at least partially filling surface defects in said dielectric layer; andforming an opening in said dielectric layer after forming said capping layer, said opening extending to a contact region of said circuit element.

12. The method of claim 11, further comprising forming a contact element in said opening, said contact element directly connecting to said circuit element.

13. The method of claim 12, wherein said capping layer is comprised of substantially the same material as said dielectric layer.

14. The method of claim 11, wherein said capping layer is removed prior to forming said opening.

15. The method of claim 14, wherein forming said capping layer comprises applying a dielectric material in a low viscous state and removing excess material of said dielectric material when said dielectric material is in a solid state.

16. The method of claim 11, further comprising forming an etch stop layer prior to forming said dielectric layer and patterning said dielectric layer using said etch stop layer as an etch stop.

17. The method of claim 16, wherein said dielectric layer is deposited with a thickness sufficient to planarize a surface topography and wherein said capping layer is deposited so as to obtain a target height for an interlayer dielectric layer in combination with said planarized dielectric layer.

18. The method of claim 17, wherein said etch stop layer is used for controlling said planarizing of said dielectric layer.