Claims
- 1. A method for the pattern-processing of a photosensitive resin composition for use in a semiconductor wafer coating, which comprises coating on a substrate a positive photosensitive resin composition consisting essentially of a polyamide represented by the following formula (1) and a diazoquinone compound: wherein X is a tetravalent aromatic group; Y is a divalent aromatic group; Z is in which R1 and R2 are divalent organic groups and R3 and R4 are monovalent organic groups; a and b represent mole fractions; a+b=100%; a=60-95 mole %; b=5-40 mole % and n=2-500, subjecting the same to prebaking and then to irradiation with a light, thereafter dissolving the exposed portion in an organic alkaline aqueous solution containing an alkyl-benzenesulfonic acid to remove the same, thereby obtaining a pattern.
- 2. The pattern-processing method according to claim 1, wherein the alkylbenzenesulfonic acid is dodecylbenzenesulfonic acid.
- 3. The pattern-processing method according to claim 1, wherein the amount of the alkylbenzenesulfonic acid contained in the organic alkaline aqueous solution is 0.1-10% by weight based on the total weight of the organic alkaline aqueous solution.
- 4. The pattern-processing method according to claim 1, wherein the organic alkaline aqueous solution is an aqueous solution of ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine or tetraethylammonium hydroxide.
- 5. The pattern-processing method according to claim 4, wherein the organic alkaline aqueous solution is an aqueous solution of tetraethylammonium hydroxide.
- 6. The pattern-processing method according to claim 1, wherein X in the formula (1) representing a polyamide is a group represented by one of the following structural formulas: wherein A represents —CH2—, —O—, —S—, —SO2—CO—, —NHCO— or —C(CF3)2—.
- 7. The pattern-processing method according to claim 1, wherein Y in the formula (1) representing a polyamide is a group represented by one of the following structural formulas: wherein A represents —CH2 —, —O—, —S—, —SO2—, —CO—, —NHCO— or —C(CF3)2—.
- 8. The pattern-processing method according to claim 1, wherein Z in the formula (1) representing a polyamide is a group represented by one of the following structural formulas:
- 9. The pattern-processing method according to claim 1, wherein the diazoquinone compound is a compound represented by one of the following structural formulas: wherein Q is a hydrogen atom and at least one Q in each of the above compounds is
- 10. The pattern-processing method according to claim 1, wherein the polyamide has any one of the following structural formulas:
- 11. The pattern-processing method according to claim 1, wherein the diazoquinone compound has any one of the following structural formulas:
- 12. The pattern-processing method according to claim 1, wherein the content of metal ion in the entire alkaline aqueous solution is 0.001 to 1 ppm.
- 13. The pattern producing method according to claim 6 wherein A is —CH2, —O—, —S—, —SO2—, —CO— or —NHCO—.
CROSS-REFERENCE TO RELATED APPLICATIONS
This is a CIP of parent application Ser. No. 08/775,721, filed Dec. 31, 1996, now abandoned, the contents of which are hereby incorporated by reference.
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Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
08/775721 |
Dec 1996 |
US |
Child |
09/287118 |
|
US |