Method of designing and structure for visual and electrical test of semiconductor devices

Abstract

In a semiconductor device using fill shape patterns incorporated into wiring levels to increase the planarity of the wiring levels, the fill shapes are aligned from one wiring level to another wiring level to provide lines of sight to lower wiring levels for visual inspection. Also, in accordance with the invention, selected aligned fill shapes are interconnected with vias to form conductive stacks for contacting lower wiring level conductive wires from upper wiring levels in order to perform electrical test probing/diagnostics.

Description

FIELD OF THE INVENTION

The present invention relates to the field of semiconductor device testing; more specifically, it relates to a structure for visual and electrical test (probing/diagnostics) of semiconductor devices using fill shape patterns incorporated into wiring levels and methods for forming these structures.

BACKGROUND OF THE INVENTION

Advanced semiconductor devices increasingly require more complex wiring schemes to wire together individual elements into circuits. These schemes rely on multilevel structures formed from wiring levels containing conductive wires and interconnect levels containing conductive vias that connect conductive wires on two different wiring levels together.

Fabrication of such multilevel structures often requires the use of a fabrication technique called chemical-mechanical-polishing (CMP) of the wiring levels and the interconnect levels. However CMP can cause variations in the flatness of the top surface of semiconductor devices severe enough to effect the quality of the photolithographic process steps used to define the patterns of wires and vias in the wiring and interconnect levels. Variations in flatness occur most frequently on the wiring levels and are caused by differences in conductive wire densities from region to region on the surface semiconductor level being then fabricated. This creates differences in polish rate so more or less material is removed from one region than another. In an attempt to solve this problem, methods have been developed that distribute fill shapes, formed at the same time and of the same material as the conductive wires, in such a manner as to attempt to keep the density of conductive material and therefore the polishing rate, the same in all regions. Fill shapes are isolated from the conductive wires and do not carry electrical signals or power. Fill shapes are added to the design data during the design process.

FIG. 1 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating the placement of fill shapes as presently practiced. Semiconductor device 1 is comprised of substrate 10 and via levels 20 , 40 , 60 , 80 , 100 , and 120 alternating with wiring levels 30 , 50 , 70 , 90 , 110 , and 130 . Passivation level 140 seals the device. Wiring levels 50 , 70 , 90 , 110 , and 130 , in addition to having conductive wires also have fill shapes. Fill shapes are designated by the letter “F” in order to more easily distinguish them for the reader. Fill shapes are conductive as well. Conductive level 50 has conductive wire 50 A and fill shapes 52 A through 52 H. Conductive level 70 has conductive wires 70 A through 70 C and fill shapes 72 A and 72 B. Conductive level 90 has conductive wire 90 A and 90 B and fill shapes 92 A through 92 F. Conductive level 110 has conductive wire 110 A and 110 B and fill shapes 112 A through 112 C. Conductive level 130 has conductive wires 130 A and 130 B and fill shapes 132 A through 132 D. Via level 20 has vias 20 A through 20 C connecting conductive wire 30 A with substrate 10 and vias 20 D and 20 E connecting conductive wire 30 B with substrate 10 . Via level 40 has via 40 A connecting conductive wire 30 B with conductive wire 50 A. Via level 60 has via 60 A connecting conductive wire 50 A with conductive wire 70 C. Via level 80 has via 80 A connecting conductive wire 70 A with conductive wire 90 A. Via level 100 has via 100 A connecting conductive wire 90 A with conductive wire 110 A and via 100 B connecting conductive wire 90 B with conductive wire 110 B. Via level 120 has via 120 A connecting conductive wire 110 A with conductive wire 130 A and via 120 B connecting conductive wire 110 B with conductive wire 130 B. All the conductive wires, vias, and fill shapes are held in a matrix of insulator 15 which may be the same insulating material or a different insulating material level to level.

In general insulators are optically transparent or semitransparent while conductors are not in the thickness' used in semiconductor devices. As may be readily seen from FIG. 1 , the placement of fill shapes of each of the wiring levels has been done independent of any other level so that when doing a visual inspection fill shapes on higher levels can block line of sight views to the lower wiring and interconnect levels of the device, limiting the usefulness of visual inspection for cause of fail or reliability assessment. For example, in FIG. 1 , only conductive wires 130 A, 130 B and 110 A are directly visible, fill shapes 112 A, 112 B, 112 C, and 92 F blocking the line of sight from the top surface.

Additionally, should electrical probing of lower levels be desired, the fill shapes block direct access to the lower levels either forcing removal of higher levels and subsequent loss of some or all of the device functionality or the milling of an access hole through the dielectric 15 and fill shapes in the path with the problematic differing etch/mill rates associated with the differing materials. For example, in, FIG. 1 , if it was desired to contact conductive wire 70 C, levels 140 , 130 , 120 , 110 , 110 , 90 , and 80 would need to be removed.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a method for vertically aligning fill shapes in several wiring levels in order to provide for line of sight views to lower wiring levels of the device.

This object of the invention is accomplished in a first method, by placing fill shapes on different wiring levels relative to a universal virtual grid. In a second method, fill shape placement is first performed on the highest wiring level requiring fill, and each lower wiring level is successively filled by aligning its fill shapes to those in the next higher wiring level.

It is a another object of the present invention to provide a method of making electrical taps to lower level conductive wires so they may be accessible from the top or near the top level of the device without having to delayer the device or at least minimize the amount of delayering.

This object of the invention is accomplished by connecting selected aligned fill shapes in several wiring levels with vias over the conductive wire to be tapped thus forming a conductive vertical stack. This stack is connected to the conductive wire by a via as well. In a first method, adjacent locations along a conductive wire are examined in sequence to see if aligned fill shapes exist in all higher levels above that location and as soon as one is found, the vias added. A second method is similar to the first, but differs in that aligned fill shapes are required as a prerequisite. In a third method, linking wires are used to connect selected conductive wires to the vertical conductive stack.

BRIEF DESCRIPTION OF DRAWINGS

The novel features believed characteristic of the invention are set forth in the appended claims. The invention itself however, as well as a preferred mode of use, further objects and advantages thereof, will best be understood by reference to the following detailed description of an illustrative embodiment when read in conjunction with the accompanying drawings, wherein:

FIG. 1 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating the placement of fill shapes as presently practiced;

FIG. 2 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating the placement of fill shapes according to the present invention;

FIG. 3 is a flowchart illustrating a first method of placing fill shapes according to the present invention;

FIG. 4 is a flowchart illustrating a second method of placing fill shapes according to the present invention;

FIG. 5 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating the placement of fill shapes and interconnection of the fill shapes to each other and to certain conductive wires by conductive vias;

FIG. 6 is a flowchart illustrating a first method of inter-level connection of fill shapes according to the present invention;

FIG. 7 is a flowchart illustrating a second method of inter-level connection of fill shapes according to the present invention;

FIG. 8 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating inter-level and intra-level connection of fill shapes according to the present invention;

FIG. 9 is a flowchart illustrating a method of inter-level and intra-level connection of fill shapes according to the present invention;

FIG. 10 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating post device fabrication formed contacts to stacks of inter-level connected fill shapes according to the present invention;

FIG. 11 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating a post device fabrication formed interconnects of post device fabrication formed contacts to stacks of inter-level connected fill shapes according to the present invention; and

FIG. 12 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating a post device fabrication formed contact to a stack of inter-level connected fill shapes to according to the present invention illustrated in FIG. 8 .

DETAILED DESCRIPTION OF THE INVENTION

Network circuit (net) wiring is formed from wire segments which are pieces of conductive wires connected to other conductive wires on other levels by vias. There may be several wire segments of the same net on the same wiring level and there may be portions of the same net on several different wiring levels. Conductive wires are formed in wiring levels, and vias in interconnect levels. Fill shapes are formed in the wiring levels. The methods described below intended to be applied to the design shapes data of the semiconductor device which is used to fabricate the device mask set. Net information is contained in the shapes design data.

FIG. 2 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating the placement of fill shapes according to the present invention. FIG. 2 may be profitably compared to FIG. 1 . It can be seen that from the highest wiring level to the lowest wiring level certain fill shapes have been vertically aligned to one another. For example fill shapes 52 C, 72 B, 92 A, 112 A, and 132 A in wiring levels 50 , 70 , 90 , 110 , and 130 have been vertically aligned to provide line of sight view to conductive wire 30 A in wiring level 30 . Some other alignments present in FIG. 2 include 92 B, 112 B, and 132 B; 92 C, 112 C, and 132 C; and 92 D, 112 D and 132 D provide other lines of sight. It can also be seen in FIG. 2 that neither fill shapes 52 D or 52 E are aligned to fill shape 92 B or fill shape 52 F or 52 G are aligned to fill shape 92 D. This occurs when changing the size or spacing of fill shapes would violate density rules that the CMP process requires.

A first method of placing fill shapes is illustrated in FIG. 3 and described below. FIG. 3 is a flowchart illustrating a first method of placing fill shapes according to the present invention. In this embodiment, fill shapes are added to the wiring levels from lowest to highest. In step 200 a virtual grid reference point is set to the same reference as the semiconductor device die design reference. Next, in step 210 , an initial virtual grid pitch is set that is greater than or equal to the minimum design pitch of the highest wiring level. Preferably, one would initially set this pitch high to reduce the number of fill shapes. Then, in step 220 a test is performed to see if the virtual grid pitch is still greater than the current wiring level design pitch. This is necessary because subsequent steps may change this relationship. If the virtual pitch is not greater or equal to the current wiring level pitch, the virtual grid pitch is set to greater than or equal to the minimum design pitch of the next lower wiring level in step 230 and the process loops back to the test in step 220 . If the virtual pitch is greater or equal to the current wiring level pitch, the current wiring level is set to the lowest wiring level in step 240 . Next, in step 250 the fill shape size is set to the minimum width for the current wiring level. Then, in step 260 fill shapes are added to the design by snapping the centers of the fill shapes to the virtual grid. Next, in step 270 a test is performed to see if the metal density requirements for the current wiring level have been met. These are rules based on the CMP process used for fabricating the current wiring level. If the process requirements are met, a second test is performed to see if the if the current wiring level is the highest wiring level, if it is the process terminates in step 330 and the dataset with fill shapes added is complete. If the current wiring level is not the highest wiring level then the current wiring level is set to the next highest wiring step in step 290 and the process loops back to step 250 .

Returning to the test of step 270 , if the metal density of the current level is too low (not met), all fill shapes placed on the current wiring level are removed, and the fill shape size increased by the current wiring level design increment in step 330 . The design increment is the smallest value by which a dimension may be incremented. Then a test in step 310 is performed to determine if the new fill shape size plus the current wiring level minimum space is less than or equal to the virtual grid pitch. If it is, the process loops back to step 260 . If it is not, then the virtual pitch is decreased by the current wiring level design increment in step 320 , and the process loops back to the test in step 220 .

A second method of alignment of fill shapes is illustrated in FIG. 4 and described below. FIG. 4 is a flowchart illustrating a second method of placing fill shapes according to the present invention. In this embodiment fill shapes are added to the wiring levels from highest to lowest and no virtual grid is used. In the first step, step 350 , the current wiring level is set to the highest wiring level requiring the addition of fill shapes, and this level is filled using conventional fill methods. The location of fill shapes is independent of line of sight considerations. Next, in step 360 , the current wiring level is set to the next lowest wiring level, the fill shape size is set to the minimum width for the current level, and the current level divided into regions requiring fill. Regions may be determined by differing fill requirements, differing needs for line of sight views, for reduction in data process time, the existence of overlying fill shapes, or other reasons. Next in step 370 the next region requiring fill is selected and in step 380 a test performed to determine if fill shapes are present over the current region in any of the higher wiring levels. In step 380 a test performed to determine if fill shapes are present over the current region in any of the higher wiring levels. If there are overlying fill shapes then current level fill shapes are added and aligned to the overlying fill shapes in step 390 and the density test of step 410 performed. If there are no overlaying fill shapes then fill shapes are added to the current region conventionally, without regard to alignment of fill shapes, in step 400 and density test of step 410 performed. In step 410 a test is performed to see if the metal density requirements for the current wiring level have been met as was done in the first method above. If the result of the test is metal density met, then the test of step 420 is performed which is a check to see if all regions of the current wiring level have been filled. If not, then the process loops back to step 370 . If all regions have been filled then the test of step 430 is performed to see if any lower wiring levels remain to be filled. If yes, then the process loops to step 360 , if no wiring levels are left to be filled, the process terminates in step 440 and the dataset with fill shapes added is complete.

Returning to the density test of step 410 , if the metal density of the current level is not met, metal density is too low, then all the fill shapes added to the current region of the current level are removed, and the fill shape size incremented by the current wiring level design increment in step 450 . Next the test of step 460 is performed. If the current fill shape size when added to the current wiring level minimum space is less than or equal to the current design level pitch then the process loops to step 380 , otherwise the process loops to step 400 .

Turning now to FIG. 5 , which is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating the placement of fill shapes and interconnection of the fill shapes to each other and to certain conductive wires by conductive vias. Thus vertically conductive stacks are provided according to another aspect of the present invention. FIG. 5 may be profitably compared to FIG. 2 . It can be seen that from the highest wiring level to the lowest wiring level certain fill shapes have been vertically aligned to one another. For example fill shapes 52 C, 72 B, 92 A, 112 A, and 132 A in wiring levels 50 , 70 , 90 , 110 , and 130 have been vertically aligned. Fill shapes are designated by the letter “F” in order to more easily distinguish them for the reader. Some other alignments present in FIG. 5 include 92 B, 112 B, and 132 B; 92 C, 112 C, and 132 C; and 92 D, 112 D and 132 D. Connecting wire 30 A to fill shape 52 C is a tapping via 42 A. Connecting fill shape 52 C to fill shape 72 B is tapping via 62 A. Connecting fill shape 72 B to fill shape 92 A is tapping via 82 A. Connecting fill shape 92 A to fill shape 112 A is tapping via 102 A. Connecting fill shape 112 A to fill shape 132 A is tapping via 122 A. The tapping vias are designated by the letter “T” in order to more easily distinguish them for the reader. This series of interconnected aligned fill shapes constitutes vertical conductive stack 142 which may be used to electrically tap wire 30 A without delayering device 1 . Wire 30 A may be thought of as a wire segment of a net. Also show in FIG. 5 is vertical conductive stack 144 formed from tapping via 82 B, fill shape 92 C, tapping via 102 B, fill shape 112 C, tapping via 122 B, and fill shape 132 C. This stack allows tapping of conductive wire 70 C which may also be thought of as a wire segment.

A first method of forming vertical conductive stacks is illustrated in FIG. 6 and described below. FIG. 6 is a flowchart illustrating a first method of inter-level connection of fill shapes according to the present invention. First in step 490 fill shapes are placed in each wiring level, either by presently practiced methods or using one of the two earlier presented methods. When one of the two earlier presented methods are used, the possibility for creation of a successful tap is greatly increased as many more fill shapes will be vertically aligned. Then, in step 500 the net to be tapped is selected. Next in step 510 , the current wiring level is set to the highest wiring level having a wire segment of the selected net. Then in step 520 , a wire segment of the current net is selected and in step 520 a location on one end of the wiring segment is selected. Next test 540 is performed to see if fill shapes exist in all levels above this location. If fill shapes do not exist then the test of step 550 is performed to see if there are additional locations on this segment, if there are, then the next adjacent location on the segment is selected in step 560 and the process loops to step 540 . If there are no additional locations on this segment then the test of step 570 is performed. This test determines if additional segments of the current net exist on the current wiring level. If there are additional segments the process loops to step 520 . If there are no additional segments on this level the test of step 580 is performed to determine if the current level is the lowest level on which a segment of the present net exists. If there are lower levels available the process loops to step 590 where the current wiring level is set to the next lower level having a wire segment of the current net and the process loops to step 520 . If there are no lower levels containing a wire segment of the current net, the net is flagged and “not tappable” in step 600 and it is determined in step 610 if additional nets are to be tapped. If yes, the process loops to step 500 . If not, the process terminates in step 620 and the dataset with fill shapes and “tapping vias” added is complete.

Returning to step 540 . If there are fill shapes in all wiring levels above the current location then tapping vias are added in step 630 and the process loops to step 610 .

A second method of forming vertical conductive stacks is illustrated in FIG. 7 and described below. FIG. 7 is a flowchart illustrating a second method of inter-level connection of fill shapes according to the present invention and is described below. In step 700 aligned fill shapes are added to all levels by using one of the two earlier presented methods or by other means that results in aligned fill shapes. Additional non-aligned fill shapes may be added afterwards, as well, and all wiring levels are overlaid. Next in step 710 , a net to be tapped is selected. Then in step 720 the current level is set to the highest wiring level having a segment of the selected net. Next in step 730 , all locations of all wire segments having fill patterns in all levels above any of the locations are identified. Next in step 740 , a test is performed to see if any such locations exist. If not, then the test in step 750 is performed to see if the current level is the lowest level. If it is not, then the current level is set to the next lowest level having a net segment of the selected net and the process loops to step 730 . If the current level is the lowest level having a segment then the net is flagged as “not tappable” in step 770 and the process loops to step 780 .

Returning to step 740 . If a location where at least one wire segment having fill patterns in all levels above exists then tapping vias are added in step 790 and the process loops to step 780 . Usually tapping vias are added over one location. In step 780 a test is performed to determine if additional nets are to be tapped. If yes, then the next net is selected in step 800 and the process loops to step 720 . If no further nets are to be tapped then the process terminates in step 810 and the dataset with fill shapes and “tapping vias” added is complete.

Turning to FIG. 8 . FIG. 8 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating inter-level and intra-level connection of fill shapes according to the present invention. In FIG. 8 vertical conductive stack 146 is formed from fill shapes 72 B, 92 A, 112 A, and 132 A connected by tapping vias 82 A, 102 A, and 122 A. Connection between conductive stack 146 and conductive wire 70 B has been made by conductive link wire 74 which has been marked with an “E.” Fill shape 72 B, link wire 74 , and conductive wire 70 B may be thought of as a wire segment. The method of placement of the tapping vias and the link wire is illustrated in FIG. 9 and described below.

FIG. 9 is a flowchart illustrating a method of inter-level and intra-level connection of fill shapes according to the present invention. First, in step 840 , aligned fill shapes added to all levels by using one of the two earlier presented methods or by another method forming aligned fill shapes. Then, in step 850 , a net to be tapped is selected. Next, in step 860 , all fill shapes adjacent to all net segments on all wiring levels are found, and ordered by highest wiring level. Then in step 870 , an adjacent fill shape is selected according to ordering hierarchy. Next in step 880 a test is performed to determine if there is a consecutive sequence of upper level aligned fill shapes. If there are not, the test in step 890 is performed to see if more adjacent fill shapes exist, if more exist then the process loops to step 870 , if not then step 900 is performed, which flags the net as “not tappable”, and the presence of additional nets determined in step 910 . If there are more nets to be tapped the process loops to step 850 , if there are no more nets to be tapped the process is terminated in step 920 and the dataset with link wire and “tapping vias” added is complete.

Returning to step 880 . If there are upper level aligned fill shapes the test in step 930 is performed which determines if a link wire can be placed between the fill shape and the net segment. If a link can not be placed then the process loops to step 890 , if a link can be placed then in step 940 , the link wire is placed and the tapping vias placed and the process loops to step 910 .

Turning to FIGS. 10 through 12 . These figures are intended to illustrate methods of making electrical connection to the vertical conductive stacks previously described when the uppermost fill shape is not large enough to be contacted with a convention test probe directly.

FIG. 10 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating post device fabrication formed contacts to stacks of inter-level connected fill shapes according to the present invention. In FIG. 10 , opening 150 A has been made in passivation 140 exposing fill shape 132 A which forms the topmost portion of vertical conductive stack 142 which is contacting conductive wire 30 A and probe pad 160 A has been formed. Similarly opening 150 B has been made in passivation 140 exposing fill shape 132 C which forms the topmost portion of vertical conductive stack 144 which is contacting conductive wire 70 C, and probe pad 160 B has been formed. Openings 150 A and 150 B and pads 160 A or 160 B may be formed using Focused Ion Beam (FIB) techniques, or evaporation or deposition and dry or wet etching techniques.

FIG. 11 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating a post device fabrication formed interconnects of post device fabrication formed contacts to stacks of inter-level connected fill shapes according to the present invention. In FIG. 11 , opening 150 A has been made in passivation 140 exposing fill shape 132 A which forms the topmost portion of vertical conductive stack 142 which is contacting conductive wire 30 A. Similarly opening 150 B has been made in passivation 140 exposing fill shape 132 C which forms the topmost portion of vertical conductive stack 144 which is contacting conductive wire 70 C, and interconnection 160 C has been formed. Openings 150 A and 150 B and connection 160 C may be formed using FIB techniques, or evaporation or deposition and dry or wet etching techniques.

FIG. 12 is a cross-sectional partial view through the wiring and interconnect levels of a semiconductor die illustrating a post device fabrication formed contact to a stack of inter-level connected fill shapes to according to the present invention illustrated in FIG. 8 . In FIG. 12 , opening 150 A has been made in passivation 140 exposing fill shape 132 A which forms the topmost portion of vertical conductive stack 142 which terminates in fill shape 72 B, and probe pad 160 A has been formed. Link wire 74 connects fill shape 72 B to conductive wire 70 B. Opening 150 A and connection 160 A may be formed using FIB techniques, or evaporation or deposition and dry or wet etching techniques.

The description of the embodiments of the present invention is given above for the understanding of the present invention. It will be understood that the invention is not to the particular embodiments described herein, but is capable of various modifications, rearrangements, combinations and substitutions will now become apparent to those skilled in the art without departing from the scope of the invention. For example, it should not be taken that aligned fill shapes must be symmetrically aligned, though they may be. It is sufficient that alignment be enough that a sight of view is created or that a via may be placed between the upper and lower fill shapes to be connected. Nor is it necessary that fill shapes be aligned in all levels. Alignment in some often will suffice to carry out the purposes of the present invention.

Therefore it is intended that the following claims cover all such modifications and changes as fall within the true spirit and scope of the invention.

Claims

1. A semiconductor device comprising:a multiplicity of wiring levels, said wiring levels having conductive wires and at least two of said wiring levels additionally having fill shapes, wherein at least a portion of said fill shapes on at least one of said wiring levels are substantially aligned vertically to at least a portion of said fill shapes on at least one other wiring level; and a multiplicity of interconnect levels between said wiring levels, said interconnect levels having vias, a first portion of said vias interconnecting conductive lands on said wiring levels, and a second portion of said vias interconnecting a portion of said vertically aligned fill shapes and a selected conductive wire forming a conductive vertical stack to said selected conductive land.

2. The semiconductor device according to claim 1, wherein said wiring levels having vertically aligned fill shapes are the upper most wiring levels.