Claims
- 1. A method of forming a liquid crystal device having an array of picture elements arranged in a matrix, each of the picture elements having a thin film transistor as a switching element for driving each of the picture elements, a picture element driving electrode connected to said thin film transistor and a display capacitor, the method comprising:
- forming a plurality of gate lines and a first electrode of each of the display capacitors, the plurality of gate lines being connected to gate electrodes of the thin film transistors on a substrate;
- forming a first non-conductive film over the plurality of gate lines and the first electrode of each of the display capacitors;
- forming a second non-conductive film over said first non-conductive film and over the first electrode of each of the display capacitors;
- removing the second non-conductive film formed over the first electrode of each of the display capacitors;
- forming a plurality of source lines connected to source electrodes of the thin film transistors and crossing the plurality of gate lines; and
- forming a second electrode of each of the display capacitors over the first electrode of each of the display capacitors and over said first non-conductive film to form the display capacitors, wherein the first and second non-conductive films are overlapped at crossing portions of the source and gate lines.
- 2. The method of claim 1, wherein the second non-conductive film has a thickness of 6,000 .ANG. or more for increasing a breakdown voltage at the intersections of the gate lines and the source lines.
- 3. The method of claim 1, wherein said first electrode of each of the display capacitors is formed by a portion of one of the gate lines.
- 4. A method of forming a liquid crystal device having an array of picture elements arranged in a matrix, each of the picture elements having a thin film transistor as a switching element for driving each of the picture elements, a picture element driving electrode connected to said thin film transistor and a display capacitor, the method comprising:
- forming a plurality of gate lines and a first electrode of each of the display capacitors, the plurality of gate lines being connected to gate electrodes of the thin film transistors on a substrate;
- forming a first non-conductive film over the plurality of gate lines and the first electrode of each of the display capacitors;
- removing the first non-conductive film formed over the first electrode of each of the display capacitors;
- forming a second non-conductive film over the first non-conductive film and the first electrode of each of the display capacitors;
- forming a plurality of source lines connected to source electrodes on the thin film transistors and crossing the plurality of gate lines; and
- forming a second electrode of each of the display capacitors over the first electrode of each of the display capacitors and over the first non-conductive film to form the display capacitors, wherein the first and second non-conductive films are overlapped at crossing portions of the source and gate lines.
- 5. The method of claim 4, wherein the second non-conductive film has a thickness of 6,000 .ANG. or more for increasing a breakdown voltage at the intersections of the gate lines and the source lines.
- 6. The method of claim 4, wherein the first electrode of each of the display capacitors is formed by a portion of one of the gate lines.
Priority Claims (3)
Number |
Date |
Country |
Kind |
57-074014 |
Apr 1982 |
JPX |
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57-074015 |
Apr 1982 |
JPX |
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57-075814 |
May 1982 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/237,521 filed May 3, 1994 now U.S. Pat. No. 5,474,942, which in turn is a continuation of Ser. No. 08/014,053 filed Feb. 5, 1993, now U.S. Pat. No. 5,365,079 which in turn is a Continuation of Ser. No. 07/803,699 filed Dec. 4, 1991 (abandoned), which is a Continuation of Ser. No. 07/484,466 filed Feb. 22, 1990 (abandoned), which is a Continuation of Ser. No. 07/285,292 filed Dec. 15, 1988 (abandoned), which is a Continuation of Ser. No. 06/894,432 filed Jul. 16, 1986 (abandoned), which is a Continuation of Ser. No. 06/489,986 filed Apr. 29, 1983 (abandoned).
US Referenced Citations (13)
Foreign Referenced Citations (4)
Number |
Date |
Country |
54-20692 |
Feb 1979 |
JPX |
58-125087 |
Jul 1983 |
JPX |
2067353 |
Dec 1980 |
GBX |
2066545 |
Jul 1981 |
GBX |
Non-Patent Literature Citations (4)
Entry |
Hayama et al., "Amorphous-silicon thin-film metal-oexide-semiconductor transistors", App. Phys. Lett.36(9), May 1, 1980, pp. 754-755. |
Hosokawa et al, "Dichroic Guest-Host Active Matrix Video Display", Biennial Display Research Conference, Paper 11.6 (1980). |
Kamins et al., "Hydrogenation of Transistors Fabricated in Polycrystalline-Silicone Films", IEEE Elec. Dev. Lett., vol. EDL-1, No. 8, Aug. 1980, pp. 159-161. |
Morozumi, "Active Matrix Addressed Liquid-Crystal Displays", 1985 International Display Research Conference, pp. 9-13. |
Continuations (7)
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Number |
Date |
Country |
Parent |
237521 |
May 1994 |
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Parent |
14053 |
Feb 1993 |
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Parent |
803699 |
Dec 1991 |
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Parent |
484466 |
Feb 1990 |
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Parent |
285292 |
Dec 1988 |
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Parent |
894432 |
Jul 1986 |
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Parent |
489986 |
Apr 1983 |
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