This appln is a con't Ser. No. 08/715,862 filed Dec. 30, 1993 abandoned.
Number | Name | Date | Kind |
---|---|---|---|
4621414 | Iranmanesh | Nov 1986 | |
4631803 | Hunter et al. | Dec 1986 | |
4700464 | Okada et al. | Oct 1987 | |
4734384 | Tsuchiya | Mar 1988 | |
4810668 | Ito | Mar 1989 | |
4873203 | Kaga et al. | Oct 1989 | |
4990463 | Mori | Feb 1991 | |
5013679 | Kumagi et al. | May 1991 | |
5017506 | Shen et al. | May 1991 | |
5049518 | Fuse et al. | Sep 1991 | |
5059550 | Tateoka et al. | Oct 1991 | |
5066609 | Yamamoto et al. | Nov 1991 | |
5075248 | Joon et al. | Dec 1991 | |
5106774 | Hieda et al. | Apr 1992 | |
5156992 | Teng et al. | Oct 1992 | |
5198383 | Teng et al. | Mar 1993 | |
5200353 | Inuishi | Apr 1993 | |
5250458 | Tsukamoto et al. | Oct 1993 | |
5258321 | Shimizu et al. | Nov 1993 | |
5273928 | Tani | Dec 1993 |
Number | Date | Country |
---|---|---|
0170950 | Jul 1988 | JP |
0078247 | Mar 1990 | JP |
Entry |
---|
B.W. Shen, G. Chung, I.C. Chen, D.J. Coleman, Jr., P.S. Ying, R. McKee, M. Yashiro, and C.W. Teng, “Scalability of a Trench Capacitor Cell for 64MBit Dram”, Semiconductor Process and Design Center, MOS Memory Division, Semiconductor Group, Texas Instruments, Dallas, Texas, pp. 1-4, no date. |
K. Sunouchi, F. Horiguchi, A. Nitayama, K. Hieda, H. Takato, N. Okabe, T. Yamada, T. Ozaki, K. Hashimoto, S. Takedal, A. Yagishita, A. Kumagae, Y. Takahasi, and F. Masuoka, “Process Integration for 64M DRAM Using An Asymmetrical Stacked Trench Capacitor (AST) Cell ”, IEEE, pp. 647-650, 1990. |
Number | Date | Country | |
---|---|---|---|
Parent | 08/175862 | Dec 1993 | US |
Child | 08/495960 | US |