This application is related to U.S. patent application Ser. No. 09/994,397, entitled METHOD OF IMPLANTING COPPER BARRIER MATERIAL TO IMPROVE ELECTRICAL PERFORMANCE; U.S. patent application Ser. No. 09/994,358, entitled METHOD OF IMPLANTATION AFTER COPPER SEED DEPOSITION; U.S. patent application Ser. No. 09/994,395, entitled METHOD OF USING TERNARY COPPER ALLOY TO OBTAIN A LOW RESISTANCE AND LARGE GRAIN SIZE INTERCONNECT; and U.S. patent application Ser. No. 10/123,751, entitled USE OF ULTR-LOW ENERGY ION IMPLANTATION (ULEII) TO FORM ALLOY LAYERS IN COPPER which are all assigned to the same assignee as this application.
Number | Name | Date | Kind |
---|---|---|---|
5004520 | Tsuji et al. | Apr 1991 | A |
5243222 | Harper et al. | Sep 1993 | A |
5300462 | Kakumu | Apr 1994 | A |
5552341 | Lee | Sep 1996 | A |
5654245 | Allen | Aug 1997 | A |
5770517 | Gardner et al. | Jun 1998 | A |
5821168 | Jain | Oct 1998 | A |
5882738 | Blish et al. | Mar 1999 | A |
5899740 | Kwon | May 1999 | A |
5969422 | Ting et al. | Oct 1999 | A |
6015749 | Liu et al. | Jan 2000 | A |
6030895 | Joshi et al. | Feb 2000 | A |
6069068 | Rathore et al. | May 2000 | A |
6090710 | Andricacos et al. | Jul 2000 | A |
6096648 | Lopatin et al. | Aug 2000 | A |
6117770 | Pramanick et al. | Sep 2000 | A |
6156638 | Agarwal et al. | Dec 2000 | A |
6180522 | Hong | Jan 2001 | B1 |
6225221 | Ho et al. | May 2001 | B1 |
6242808 | Shimizu et al. | Jun 2001 | B1 |
6268291 | Andricacos et al. | Jul 2001 | B1 |
6294463 | Tseng | Sep 2001 | B1 |
6294836 | Paranjpe et al. | Sep 2001 | B1 |
6297146 | Lopatin | Oct 2001 | B1 |
6344413 | Zurcher et al. | Feb 2002 | B1 |
6365502 | Paranjpe et al. | Apr 2002 | B1 |
6399496 | Edelstein et al. | Jun 2002 | B1 |
6410383 | Ma | Jun 2002 | B1 |
6420262 | Farrar | Jul 2002 | B1 |
6423633 | Tseng | Jul 2002 | B1 |
6426289 | Farrar | Jul 2002 | B1 |
6461675 | Paranjpe et al. | Oct 2002 | B2 |
6465867 | Bernard et al. | Oct 2002 | B1 |
6482734 | Ha et al. | Nov 2002 | B1 |
6482740 | Soininen et al. | Nov 2002 | B2 |
6500749 | Liu et al. | Dec 2002 | B1 |
6521532 | Cunningham | Feb 2003 | B1 |
6534865 | Lopatin et al. | Mar 2003 | B1 |
20010035237 | Nagano et al. | Nov 2001 | A1 |
20020036309 | Sekiguchi et al. | Mar 2002 | A1 |
20020039542 | Bogel et al. | Apr 2002 | A1 |
20020053741 | Iwasaki et al. | May 2002 | A1 |
20020084529 | Dubin et al. | Jul 2002 | A1 |
20020102838 | Paranjpe et al. | Aug 2002 | A1 |
20020109233 | Farrar | Aug 2002 | A1 |
20020115292 | Andricacos et al. | Aug 2002 | A1 |
20020137332 | Paranjpe et al. | Sep 2002 | A1 |
Number | Date | Country |
---|---|---|
0 567 867 | Nov 1993 | EP |
1 039 531 | Sep 2000 | EP |
1 039 531 | Dec 2000 | EP |
1 094 515 | Apr 2001 | EP |
Entry |
---|
4.7.3 General Reliability Issues Associated with IC Interconnects, Silicon Processing For the VLSI Era, vol. II, pp. 264-265. 1990. |
James A. Cunningham, “Improving Copper Interconnects: A Search for Useful Dopants,” Semiconductor International, (Apr. 2000), pp. 1-8. |
Dong Joon Kim et al, “New Method to Prepare W-B+-N Ternary Barrier to Cu diffusion by Implanting BF2+ Ions Into W-N Thin Film,” J. Vac. Sci. Technol. B 17(4), Jul./Aug., 1999, pp. 1598-1601. |
W. F. McArthur et al., “Structural and Electrical Characterization of Si-Implanted Tin as a Diffusion Barrier for Cu Metallization,” Mat. Res. Soc. Symp. Proc. vol. 391, 1995, pp. 327-332. |
PCT Intetnational Search Report, International Application No. PCT/US02/32605, International Filing Date Nov. 10, 2002 (7 pages). |
PCT International Search Report, International Application No. PCT/US 02/32554, International Filing Date Nov. 10, 2002 (5 pages). |