The present subject matter generally concerns improved termination features for multilayer electronic components, and more particularly relates to plated terminations for multilayer capacitors or integrated passive components. The subject termination design utilizes selective arrangements of internal and/or external electrode tabs to facilitate the formation of plated electrical connections. The external connections are preferably made whereby the provision of typical thick film termination stripes is eliminated or greatly simplified.
Many modern electronic components are packaged as monolithic devices, and may comprise a single component or multiple components within a single chip package. One specific example of such a monolithic device is a multilayer capacitor or capacitor array, and of particular interest with respect to the disclosed technology are multilayer capacitors with interdigitated internal electrode layers and corresponding electrode tabs. Examples of multilayer capacitors that include features of interdigitated capacitor (IDC) technology can be found in U.S. Pat. Nos. 5,880,925 (DuPré et al.) and U.S. Pat. No. 6,243,253 B1 (DuPré et al.). Other monolithic electronic components correspond to devices that integrate multiple passive components into a single chip structure. Such an integrated passive component may provide a selected combination of resistors, capacitors, inductors and/or other passive components that are formed in a multilayered configuration and packaged as a monolithic electronic device.
Selective terminations are often required to form electrical connections for various monolithic electronic components. Multiple terminations are needed to provide electrical connections to the different electronic components of an integrated monolithic device. Multiple terminations are also often used in conjunction with IDC's and other multilayer arrays in order to reduce undesirable inductance levels. One exemplary way that multiple terminations have been formed in multilayer components is by drilling vias through selected areas of a chip structure and filling the vias with conductive material such that an electrical connection is formed among selected electrode portions of the device.
Another way of forming external terminations for the subject devices is to apply a thick film stripe of silver or copper in a glass matrix to exposed portions of internal electrode layers, and subsequently plating additional layers of metal over the termination stripes such that a part is solderable to a substrate. An example of an electronic component with external electrodes formed by baked terminations and metal films plated thereon is disclosed in U.S. Pat. No. 5,021,921 (Sano et al.). The application of terminations is often hard to control and can become problematic with reduction in chip sizes. U.S. Pat. Nos. 6,232,144 B1 (McLoughlin) and 6,214,685 B1 (Clinton et al.) concern methods for forming terminations on selected regions of an electronic device.
The ever-shrinking size of electronic components makes it quite difficult to print termination stripes in a predetermined area with required precision. Thick film termination stripes are typically applied with a machine that grabs a chip and applies selective terminations with specially designed wheels. U.S. Pat. Nos. 5,944,897 (Braden), U.S. Pat. No. 5,863,331 (Braden et al.), U.S. Pat. No. 5,753,299 (Garcia et al.), and U.S. Pat. No. 5,226,382 (Braden) disclose mechanical features and steps related to the application of termination stripes to a chip structure. Reduced component size or an increased number of termination contacts for an electronic chip device may cause the resolution limits of typical termination machines to become maxed out.
Other problems that can arise when trying to apply selective terminations include shifting of the termination lands, mispositioning of terminations such that internal electrode tabs are exposed or missed entirely, and missing wrap-around termination portions. Yet further problems may be caused when too thin a coating of the paint-like termination material is applied or when one portion of termination coating smears into another causing shorted termination lands. These and other concerns surrounding the provision of electrical termination for monolithic devices create a need to provide cheap and effective termination features for electronic chip components.
Yet another known option related to termination application involves aligning a plurality of individual substrate components to a shadow mask. Parts can be loaded into a particularly designed fixture, such as that disclosed in U.S. Pat. No. 4,919,076 (Lutz et al.), and then sputtered through a mask element. This is typically a very expensive manufacturing process, and thus other effective yet more cost efficient termination provisions may be desirable.
U.S. Pat. Nos. 5,880,011 (Zablotny et al.), U.S. Pat. No. 5,770,476 (Stone), U.S. Pat. No. 6,141,846 (Miki), and U.S. Pat. No. 3,258,898 (Garibotti), respectively deal with aspects of the formation of terminations for various electronic components.
Additional background references that address methodology for forming multilayer ceramic devices include U.S. Pat. Nos. 4,811,164 (Ling et al.), U.S. Pat. No. 4,266,265 (Maher), U.S. Pat. No. 4,241,378 (Dorrian), and U.S. Pat. No. 3,988,498 (Maher).
While various aspects and alternative features are known in the field of electronic components and terminations therefor, no one design has emerged that generally addresses all of the issues as discussed herein. The disclosures of all the foregoing United States patents are hereby fully incorporated into this application by reference thereto.
The present subject matter recognizes and addresses various of the foregoing shortcomings, and others concerning certain aspects of electrical terminations and related technology. Thus, broadly speaking, a principal object of the presently disclosed technology is improved termination features for electronic components. More particularly, the disclosed termination features are plated and designed to eliminate or greatly simplify thick-film stripes that are typically printed along portions of a monolithic device for termination purposes.
Another principal object of the presently disclosed technology is to offer a way to guide the formation of plated terminations through the provision of internal electrode tabs and the optional placement of additional anchor tabs. Both internal electrode tabs and additional anchor tabs can facilitate the formation of secure and reliable external plating. Anchor tabs, which typically provide no internal electrical connections, may be provided for enhanced external termination connectivity, better mechanical integrity and deposition of plating materials.
Yet another principal object of the present subject matter is to provide termination features for electronic components whereby typical thick-film termination stripes are eliminated or simplified, and only plated terminations are needed to effect an external electrode connection. Plated materials in accordance with the disclosed technology may comprise metallic conductors, resistive materials, and/or semi-conductive materials.
A still further principal object of the subject termination technology is that termination features can be used in accordance with a variety of multilayer monolithic devices, including, for example, interdigitated capacitors, multilayer capacitor arrays, and integrated passive components. Integrated passive components may include a select combination of resistors, capacitors, varistors, inductors, baluns, couplers, and/or other passive components.
A resultant advantage of the disclosed subject matter is that termination features for electronic components can be effected without the need for application by termination machinery, thus providing an ability to yield external terminations with resolution levels that may otherwise be unattainable. Such improved termination resolution also enables the provision of more terminations within a given component area and terminations with a much finer pitch.
A general object of the present technology is to provide termination features that enable an effective solder base with reduced susceptibility to solder leaching and also lowered insulation resistance. Configuration of exposed electrode portions and anchor tab portions is designed such that selected adjacent exposed tab portions are decorated with plated termination material without undesired bridging among distinct termination locations.
Yet another object of the present subject matter is that the disclosed technology can be utilized in accordance with a myriad of different termination configurations, including varied numbers and placement of external terminations. Plated terminations can be formed in accordance with a variety of different plating techniques as disclosed herein at locations that are self-determined by the provision of exposed conductive elements on the periphery of an electronic component.
A still further object of the subject plated termination technology is to facilitate the production of cheaper and more effective electronic components in an expedient and reliable manner.
Additional objects and advantages of the invention are set forth in, or will be apparent to those of ordinary skill in the art from, the detailed description herein. Also, it should be further appreciated by those of ordinary skill in the art that modifications and variations to the specifically illustrated, referenced, and discussed features hereof may be practiced in various embodiments and uses of the disclosed technology without departing from the spirit and scope thereof, by virtue of present reference thereto. Such variations may include, but are not limited to, substitution of equivalent means and features, or materials for those shown, referenced, or discussed, and the functional, operational, or positional reversal of various parts, features, or the like.
Still further, it is to be understood that different embodiments, as well as different presently preferred embodiments, of this invention may include various combinations or configurations of presently disclosed features or elements, or their equivalents (including combinations of features or configurations thereof not expressly shown in the figures or stated in the detailed description). A first exemplary embodiment of the present subject matter relates to a multilayer electronic component with plated terminations. Such a multilayer electronic component may preferably include a plurality of insulating substrate layers with a plurality of electrodes interleaved among the substrate layers. Each respective electrode preferably has at least one tab portion extending therefrom that is exposed along selected edges of the plurality of insulating substrates. Selected of the exposed electrode tab portions are preferably stacked within a predetermined distance of one another such that a plurality of plated terminations may be formed along the periphery of the electronic component.
Another related embodiment of the disclosed technology concerns an electronic component such as the aforementioned first exemplary embodiment, further including additional anchor tabs. In such an exemplary embodiment, anchor tabs may also be interspersed among the plurality of substrate layers and exposed at predetermined locations such that the formation of plated terminations is guided by the location of the exposed electrode tab portions and the exposed anchor tabs. With the provision of a sufficient stack of exposed tabs as well as an exposed tab on each top and bottom surface of the body of dielectric material aligned with the stack of exposed tabs, the formation of a plated termination that extends along an entire exposed side and that wraps around both top and bottom sides of the electronic component is possible and usually, but not always, desirable.
Another exemplary embodiment of the present invention corresponds to an integrated monolithic device comprising at least two passive components. Each passive component is preferably characterized by a ceramic portion and at least one respective internal electrode layer with tab portions extending therefrom that are exposed on selected sides of the integrated monolithic device. Each respective passive component of the monolithic device also preferably includes a corresponding plurality of metallized plating portions formed to connect selected of the respective sets of tab portions and to provide electrical connection to the electrode layers of each respective passive component.
Anchor tabs may also be utilized in accordance with the above exemplary integrated monolithic device to offer additional termination options. By placing internal electrode tabs at selected locations within the device, a variety of different termination options becomes available. The formation of the plated terminations is guided by the location of exposed electrode tabs and anchor tabs, and may potentially wrap around to the top and bottom sides of the monolithic device.
Yet another exemplary embodiment of the present-subject matter relates to an interdigitated capacitor comprising a plurality of interleaved electrode and dielectric layers and characterized by respective topmost and bottommost layers. The topmost and bottommost layers of the multilayer interdigitated capacitor preferably comprise dielectric cover layers with a thickness greater than that of the other dielectric layers in the stacked configuration. Each respective electrode layer includes a plurality of electrode tabs that extends to selected sides of the interdigitated capacitor. The electrode tabs are preferably exposed in stacked portions at selected locations along the sides of a capacitor. Anchor tabs are preferably embedded within the top and bottom cover layers and optionally within the active layers such that an exposed stack of tabs extends along a portion of an entire side of the multilayer device. External terminations may then be plated along the stack of exposed tabs and may even wrap around to the topmost and bottommost layers if anchor tabs are positioned thereon and generally aligned with the stack of exposed internal tabs.
Additional embodiments of the present subject matter, not necessarily expressed in this summarized section, may include and incorporate various combinations of aspects of features or parts referenced in the summarized objectives above, and/or features or parts as otherwise discussed in this application.
Those of ordinary skill in the art will better appreciate the features and aspects of such embodiments, and others, upon review of the remainder of the specification.
A full and enabling description of the present subject matter, including the best mode thereof, directed to one of ordinary skill in the art, is set forth in the specification, which makes reference to the appended figures, in which:
Repeat use of reference characters throughout the present specification and appended drawings is intended to represent same or analogous features or elements of the invention.
As referenced in the Brief Summary of the Invention section, the present subject matter is directed towards improved termination features for monolithic electronic components.
The subject termination scheme utilizes exposed electrode portions of structures such as monolithic capacitor arrays, multilayer capacitors including those with interdigitated electrode configurations, integrated passive components, and other electronic chip structures. Additional anchor tabs may be embedded within such monolithic components to provide stacked pluralities of exposed internal conductive portions to which plated terminations may be formed and securely positioned along the periphery of a device.
By providing additional anchor tabs on the top and bottom surfaces of a chip device, wrap-around plated terminations may be formed that extend along the side of a chip to the top and bottom layers. Such wrap-around terminations may be desirable in certain applications to facilitate soldering of the chip to a printed circuit board or other suitable substrate.
The subject plating technology and anchor tab features may be utilized in accordance with a plurality of different monolithic components.
Still further exemplary embodiments of the present subject matter relate to the multilayer capacitor configurations illustrated in
It should be noted that each of the exemplary embodiments as presented herein should not insinuate limitations of the disclosed technology. Features illustrated or described as part of one embodiment can be used in combination with another embodiment to yield further embodiments. Additionally, certain features may be interchanged with similar devices or features not mentioned yet which perform the same, similar or equivalent function.
Reference will now be made in detail to the presently preferred embodiments of the disclosed technology. Referring to the drawings,
The exemplary electrode layer configuration of
An interdigitated capacitor typically consists of a plurality of electrode layers, such as those shown in
Exemplary IDC embodiment 16 may alternatively be viewed as a multilayer configuration of alternating electrode layers and dielectric layers in portion 20 of the device. IDC 16 is typically further characterized by a topmost dielectric layer 22 and bottommost dielectric layer 24 that may generally be thicker than other dielectric layers of IDC configuration 16. Such dielectric layers 22 and 24 act as cover layers to protect the device and provide sufficient bulk to withstand the stress of glass/metal frit that may be fired to a capacitor body. Known capacitor embodiments have utilized the multilayer arrangement of
A multilayer IDC component 16 such as that of
For example, consider the exemplary internal electrode layer configuration illustrated in the exploded view of
Yet another exemplary internal electrode layer configuration provides for electrode tabs that are exposed on four sides of a multilayer interdigitated component. Such internal electrode layers may be similar to the configuration depicted in
A still further exemplary electrode layer configuration and corresponding multilayer capacitor embodiment is depicted in
Referring again to
A thick-film stripe in accordance with such type of termination also typically requires printed application by a termination machine and printing wheel or other suitable component to transfer a metal-loaded paste. Such printing hardware may have resolution limits that make it hard to apply thick-film stripes, especially to smaller chips. A typical existing size for an IDC 16 or other electronic component is about one hundred and twenty mils (thousandths of an inch) by sixty mils along the two opposing sets of sides with a thickness from top to bottom layers of about thirty mils. When more than four terminations need to be applied to a part this size or terminations are desired for a part with smaller dimensions, the resolution levels of specialized termination machinery often becomes a limitation in applying effective termination stripes.
The present subject matter offers a termination scheme that eliminates or greatly simplifies the provision of such typical thick-film termination stripes. By eliminating the less-controlled thick film stripe, the need for typical termination printing hardware is obviated. Termination features in accordance with the disclosed technology focus more on the plated layer of nickel, tin, copper, etc. that is typically formed over a thick-film termination stripe.
Consider the exemplary capacitor array configuration 44 presented in
Plated terminations 50 are thus guided by the positioning of the exposed electrode tabs 46. This-phenomena is hereafter referred to as “self-determining” since the formation of plated terminations 50 is determined by the configuration of exposed metallization at selected peripheral locations on multilayer component, or capacitor array, 44. The exposed internal electrode tabs 46 also help anchor terminations 50 to the periphery of capacitor array 44′, which corresponds to a multilayer capacitor embodiment such as 44 of
The plated terminations 50 of
For instance, consider the exploded configuration of exemplary internal metallization illustrated in
With reference to
For some component applications, it may be preferred that terminations not only extend along the entire width of a component, but also wrap around to the top and bottom layers. In this case, external anchor tabs 70 may be positioned on top and bottom layers of multilayer IDC 60 such that plated terminations can form along the sides and on portions of the top and bottom layers, forming extended solder lands. For example, the provision of embedded internal anchor tabs 58 and 68 and external anchor tabs 70 along with existing exposed electrode tabs 56 in IDC 60, such as depicted in
There are several different techniques that can potentially be used to form plated terminations, such as terminations 72 on multilayer component embodiment 74 of
In accordance with electrochemical deposition and electroless plating techniques, a component such as IDC 74 of
Another technique that may be utilized in accordance with the formation of the subject plated terminations involves magnetic attraction of plating material. For instance, nickel particles suspended in a bath solution can be attracted to similarly conductive exposed electrode tabs and anchor tabs of a multilayer component by taking advantage of the magnetic properties of nickel. Other materials with similar magnetic properties may be employed in the formation of plated terminations.
A still further technique regarding the application of plated termination material to exposed electrode tabs and anchor tabs of a multilayer component involves the principles of electrophoretics or electrostatics. In accordance with such exemplary technology, a bath solution contains electrostatically charged particles. An IDC or other multilayer component with exposed conductive portions may then be biased with an opposite charge and subjected to the bath solution such that the charged particles are deposited at select locations on the component. This technique is particularly useful in the application of glass and other semiconductive or nonconductive materials. Once such materials are deposited, it is possible to thereafter convert the deposited materials to conductive materials by intermediate application of sufficient heat to the component.
One particular methodology for forming plated terminations in accordance with the disclosed technology relates to a combination of the above-referenced plating application techniques. A multilayer component may first be submersed in an electroless plating solution, such as copper ionic solution, to deposit an initial layer of copper over exposed tab portions, and provide a larger contact area. The plating technique may then be switched to an electrochemical plating system which allows for a faster buildup of copper on the selected portions of such component.
In accordance with the different available techniques for plating material to exposed metallization of a multilayer component in accordance with the present technology, different types of materials may be used to create the plated terminations and form electrical connections to internal features of an electrical component. For instance, metallic conductors such as nickel, copper, tin, etc. may be utilized as well as suitable resistive conductors or semi-conductive materials, and/or combinations of selected of these different types of materials.
A particular example of plated terminations in accordance with the present subject matter wherein plated terminations comprise a plurality of different materials is discussed with reference to
A first step in the formation of the terminations illustrated in
A still further plating alternative corresponds to forming a layer of metallic plating, and then electroplating a resistive alloy over such metallic plating. Plating layers can be provided alone or in combination to provide a variety of different plated termination configurations. A fundamental of such plated terminations is that the self-determining plating is configured by the design and positioning of exposed conductive portions along the periphery of a component.
Such particular orientation of internal electrode portions and anchor tabs may be provided in a variety of different configurations to facilitate the formation of plated terminations in accordance with the present subject matter. For instance, consider the exemplary internal conductive configuration of
Yet another exemplary multilayer component in accordance with aspects of the present subject matter is represented as component 90 in
A still further application of the presently disclosed technology relates to more general multilayer component configurations, such as depicted in
Another example embodying aspects of the disclosed technology is presented with respect to
An integrated passive component 110, such as that represented by
It should be appreciated that the monolithic component embodiments presented in
It should be appreciated that internal anchor tabs and external anchor tabs may selectively be used for different termination preferences to provide different sizes of side terminations or wrap-around terminations. IDC embodiments displayed and described herein that feature both internal and external anchor tabs may, for instance, only utilize internal anchor tab features when wrap-around terminations are not preferred for a particular application. Different combinations of both internal and external anchor tabs with existing exposed electrode tabs on a variety of different multilayer components can yield numerous potential termination schemes for a device.
While the present subject matter has been described in detail with respect to specific embodiments thereof, it will be appreciated that those skilled in the art, upon attaining an understanding of the foregoing may readily adapt the present technology for alterations to, variations of, and equivalents to such embodiments. Accordingly, the scope of the present disclosure is by way of example rather than by way of limitation, and the subject disclosure does not preclude inclusion of such modifications, variations, and/or additions to the present subject matter as would be readily apparent to one of ordinary skill in the art.
This application is a divisional of U.S. patent application Ser. No. 10/409,023 filed Apr. 8, 2003, now U.S. Pat. No. 7,152,291 which claims benefit of previously filed U.S. Provisional Patent Application Ser. No. 60/372,673 filed Apr. 15, 2002, all entitled “PLATED TERMINATIONS” and having the same inventors as present.
Number | Name | Date | Kind |
---|---|---|---|
369545 | Monroe et al. | Sep 1887 | A |
437011 | Bentley | Sep 1890 | A |
3258898 | Garibotti | Jul 1966 | A |
3284684 | Gaenge | Nov 1966 | A |
3448355 | Aheam, Jr. et al. | Jun 1969 | A |
3452257 | Belko, Jr. | Jun 1969 | A |
3612963 | Piper et al. | Oct 1971 | A |
3665267 | Acello | May 1972 | A |
3679950 | Rutt | Jul 1972 | A |
3809973 | Hurley | May 1974 | A |
3898541 | Weller | Aug 1975 | A |
3965552 | Rutt | Jun 1976 | A |
3988498 | Maher | Oct 1976 | A |
3992761 | McElroy et al. | Nov 1976 | A |
4064606 | Dunn | Dec 1977 | A |
4241378 | Dorrian | Dec 1980 | A |
4266265 | Maher | May 1981 | A |
4289384 | Samek | Sep 1981 | A |
4471406 | Sawairi | Sep 1984 | A |
4478690 | Scholtens | Oct 1984 | A |
4482934 | Hirota et al. | Nov 1984 | A |
4486813 | Maher | Dec 1984 | A |
4503131 | Baudrand | Mar 1985 | A |
4555414 | Hoover et al. | Nov 1985 | A |
4574329 | Eijkelemkamp et al. | Mar 1986 | A |
4613518 | Ham et al. | Sep 1986 | A |
4658328 | Sakabe | Apr 1987 | A |
4661884 | Seaman | Apr 1987 | A |
4681656 | Byrum | Jul 1987 | A |
4706162 | Hernandez et al. | Nov 1987 | A |
4729058 | Gupta et al. | Mar 1988 | A |
4803543 | Inayoshi et al. | Feb 1989 | A |
4811162 | Maher et al. | Mar 1989 | A |
4811164 | Ling et al. | Mar 1989 | A |
4819128 | Florian et al. | Apr 1989 | A |
4831494 | Arnold et al. | May 1989 | A |
4852227 | Burks | Aug 1989 | A |
4919076 | Lutz et al. | Apr 1990 | A |
5021921 | Sano et al. | Jun 1991 | A |
5058799 | Zsamboky | Oct 1991 | A |
5100714 | Zsamboky | Mar 1992 | A |
5159300 | Nakamura et al. | Oct 1992 | A |
5196822 | Gallusser et al. | Mar 1993 | A |
5226382 | Braden | Jul 1993 | A |
5251094 | Amano et al. | Oct 1993 | A |
5292558 | Heller et al. | Mar 1994 | A |
5311651 | Kim et al. | May 1994 | A |
5369545 | Bhattacharyya et al. | Nov 1994 | A |
5412357 | Nakamura et al. | May 1995 | A |
5464653 | Chantraine et al. | Nov 1995 | A |
5493266 | Sasaki et al. | Feb 1996 | A |
5517754 | Beilstein, Jr. et al. | May 1996 | A |
5547906 | Badehi | Aug 1996 | A |
5550705 | Moncrieff | Aug 1996 | A |
5576052 | Arledge et al. | Nov 1996 | A |
5576053 | Senda et al. | Nov 1996 | A |
5621375 | Gurevich | Apr 1997 | A |
5635894 | Morant | Jun 1997 | A |
5668694 | Sato et al. | Sep 1997 | A |
5712758 | Amano et al. | Jan 1998 | A |
5716713 | Zsamboky et al. | Feb 1998 | A |
5753299 | Garcia et al. | May 1998 | A |
5758398 | Rijnbeek et al. | Jun 1998 | A |
5770476 | Stone | Jun 1998 | A |
5863331 | Braden et al. | Jan 1999 | A |
5870273 | Sogabe et al. | Feb 1999 | A |
5880011 | Zablotny et al. | Mar 1999 | A |
5880925 | DuPre et al. | Mar 1999 | A |
5944897 | Braden | Aug 1999 | A |
5985414 | Fukuda et al. | Nov 1999 | A |
5990778 | Strumpler et al. | Nov 1999 | A |
6040755 | Abe et al. | Mar 2000 | A |
6141846 | Miki | Nov 2000 | A |
6141870 | McDermott et al. | Nov 2000 | A |
6151204 | Shigemoto et al. | Nov 2000 | A |
6159768 | Ahn | Dec 2000 | A |
6181544 | Nakagawa et al. | Jan 2001 | B1 |
6188565 | Naito et al. | Feb 2001 | B1 |
6191932 | Kuroda et al. | Feb 2001 | B1 |
6191933 | Ishigaki et al. | Feb 2001 | B1 |
6195249 | Honda et al. | Feb 2001 | B1 |
6201683 | Yamada et al. | Mar 2001 | B1 |
6214685 | Clinton et al. | Apr 2001 | B1 |
6232144 | McLoughlin | May 2001 | B1 |
6243253 | DuPre et al. | Jun 2001 | B1 |
6266229 | Naito et al. | Jul 2001 | B1 |
6288887 | Yoshida et al. | Sep 2001 | B1 |
6292351 | Ahiko et al. | Sep 2001 | B1 |
6310757 | Tuzuki et al. | Oct 2001 | B1 |
6311390 | Abe et al. | Nov 2001 | B1 |
6343004 | Kuranuki et al. | Jan 2002 | B1 |
6362723 | Kawase | Mar 2002 | B1 |
6370010 | Kuroda et al. | Apr 2002 | B1 |
6375457 | Ohshio | Apr 2002 | B1 |
6380619 | Ahiko et al. | Apr 2002 | B2 |
6381117 | Nakagawa et al. | Apr 2002 | B1 |
6392869 | Shiraishi et al. | May 2002 | B2 |
6407906 | Ahiko et al. | Jun 2002 | B1 |
6413862 | Farnworth et al. | Jul 2002 | B1 |
6428942 | Jiang et al. | Aug 2002 | B1 |
6429533 | Li et al. | Aug 2002 | B1 |
6433992 | Nakagawa et al. | Aug 2002 | B2 |
6452781 | Ahiko et al. | Sep 2002 | B1 |
6493207 | Nakano et al. | Dec 2002 | B2 |
6496355 | Galvagni et al. | Dec 2002 | B1 |
6515842 | Hayworth et al. | Feb 2003 | B1 |
6525395 | Kawase | Feb 2003 | B1 |
6531806 | Daidai | Mar 2003 | B1 |
6563689 | Yamamoto | May 2003 | B2 |
6577486 | Nishimiya et al. | Jun 2003 | B1 |
6594136 | Kuroda et al. | Jul 2003 | B2 |
6621011 | Daidai et al. | Sep 2003 | B1 |
6621682 | Takakuwa et al. | Sep 2003 | B1 |
6628502 | Masumiya et al. | Sep 2003 | B2 |
6661638 | Terry et al. | Dec 2003 | B2 |
6661639 | Devoe et al. | Dec 2003 | B1 |
6661640 | Togashi | Dec 2003 | B2 |
6696647 | Ono et al. | Feb 2004 | B2 |
6729003 | Yokoyama et al. | May 2004 | B2 |
6743479 | Kanoh et al. | Jun 2004 | B2 |
6765781 | Togashi | Jul 2004 | B2 |
6816356 | Devoe et al. | Nov 2004 | B2 |
6819543 | Vieweg et al. | Nov 2004 | B2 |
6822847 | Devoe et al. | Nov 2004 | B2 |
6829134 | Yamauchi et al. | Dec 2004 | B2 |
6905768 | Tada et al. | Jun 2005 | B2 |
6911893 | Kodama et al. | Jun 2005 | B2 |
6922329 | Togashi | Jul 2005 | B2 |
6956731 | Yoshii et al. | Oct 2005 | B2 |
6960366 | Ritter et al. | Nov 2005 | B2 |
6970341 | Devoe et al. | Nov 2005 | B1 |
6972942 | Ritter et al. | Dec 2005 | B2 |
6982863 | Galvagni et al. | Jan 2006 | B2 |
7005192 | Sanada et al. | Feb 2006 | B2 |
7067172 | Ritter et al. | Jun 2006 | B2 |
7075776 | Devoe et al. | Jul 2006 | B1 |
7152291 | Ritter et al. | Dec 2006 | B2 |
7154374 | Ritter et al. | Dec 2006 | B2 |
7161794 | Galvagni et al. | Jan 2007 | B2 |
7177137 | Ritter et al. | Feb 2007 | B2 |
7258819 | Harris, IV | Aug 2007 | B2 |
7307829 | Devoe et al. | Dec 2007 | B1 |
7312145 | Hashimoto | Dec 2007 | B2 |
7329976 | Shirasu et al. | Feb 2008 | B2 |
7344981 | Ritter et al. | Mar 2008 | B2 |
7345868 | Trinh | Mar 2008 | B2 |
7463474 | Ritter et al. | Dec 2008 | B2 |
7505249 | Komatsu et al. | Mar 2009 | B2 |
7567427 | Nagamiya | Jul 2009 | B2 |
7589952 | Motoki et al. | Sep 2009 | B2 |
7589953 | Togashi et al. | Sep 2009 | B2 |
7605683 | Sawada et al. | Oct 2009 | B2 |
7633739 | Devoe | Dec 2009 | B2 |
7719819 | Motoki et al. | May 2010 | B2 |
7751174 | Kimura et al. | Jul 2010 | B2 |
7847371 | Komatsu et al. | Dec 2010 | B2 |
7933113 | Motoki et al. | Apr 2011 | B2 |
8004819 | Nagamiya et al. | Aug 2011 | B2 |
8149565 | Lee et al. | Apr 2012 | B2 |
8163331 | Trinh | Apr 2012 | B2 |
8184424 | Motoki et al. | May 2012 | B2 |
20020001712 | Higuchi | Jan 2002 | A1 |
20030011962 | Yamamoto | Jan 2003 | A1 |
20030011963 | Ahiko et al. | Jan 2003 | A1 |
20030026059 | Togashi | Feb 2003 | A1 |
20030071245 | Harris, IV | Apr 2003 | A1 |
20030231457 | Ritter et al. | Dec 2003 | A1 |
20040090733 | Devoe et al. | May 2004 | A1 |
20040174656 | MacNeal et al. | Sep 2004 | A1 |
20050046536 | Ritter et al. | Mar 2005 | A1 |
20050057887 | Devoe et al. | Mar 2005 | A1 |
20070014075 | Ritter et al. | Jan 2007 | A1 |
20080081200 | Katsube et al. | Apr 2008 | A1 |
20080123248 | Kunishi et al. | May 2008 | A1 |
20080123249 | Kunishi et al. | May 2008 | A1 |
20080145551 | Kunishi et al. | Jun 2008 | A1 |
20080158774 | Trinh | Jul 2008 | A1 |
20080291602 | Devoe | Nov 2008 | A1 |
20090052114 | Motoki et al. | Feb 2009 | A1 |
20090268374 | Motoki et al. | Oct 2009 | A1 |
20110205684 | Yamamoto et al. | Aug 2011 | A1 |
Number | Date | Country |
---|---|---|
1723514 | Jan 2006 | CN |
101030476 | Sep 2007 | CN |
103 16 983 | Dec 2003 | DE |
0351343 | Jan 1990 | EP |
0 379 066 | Jul 1990 | EP |
0379066 | Jul 1990 | EP |
0 955 795 | Nov 1999 | EP |
1 335 393 | Aug 2003 | EP |
1 482 524 | Dec 2004 | EP |
1 571 680 | Sep 2005 | EP |
1 826 787 | Aug 2007 | EP |
1535662 | Dec 1978 | GB |
1540403 | Feb 1979 | GB |
2326976 | Jan 1999 | GB |
2334377 | Aug 1999 | GB |
2389708 | Dec 2003 | GB |
02 294007 | Dec 1990 | JO |
61-183913 | Aug 1986 | JP |
62-145602 | Jun 1987 | JP |
63-146421 | Jun 1988 | JP |
63146421 | Jun 1988 | JP |
63-169014 | Jul 1988 | JP |
64-54720 | Mar 1989 | JP |
6454720 | Mar 1989 | JP |
1201902 | Aug 1989 | JP |
01 293503 | Nov 1989 | JP |
01313804 | Dec 1989 | JP |
3-178110 | Aug 1991 | JP |
03-192706 | Aug 1991 | JP |
4-268710 | Sep 1992 | JP |
05-144665 | May 1993 | JP |
6-69063 | Mar 1994 | JP |
6168845 | Jun 1994 | JP |
06-267784 | Sep 1994 | JP |
08-037127 | Feb 1996 | JP |
08-203771 | Aug 1996 | JP |
8-264372 | Oct 1996 | JP |
08-264372 | Oct 1996 | JP |
9-129476 | May 1997 | JP |
09 129476 | May 1997 | JP |
129477 | May 1997 | JP |
09-190946 | Jul 1997 | JP |
9190946 | Jul 1997 | JP |
09-190946 | Nov 1997 | JP |
10-154632 | Jun 1998 | JP |
10-251837 | Sep 1998 | JP |
10-256076 | Sep 1998 | JP |
11-154621 | Jun 1999 | JP |
11-162771 | Jun 1999 | JP |
11-219849 | Aug 1999 | JP |
2000-107658 | Apr 2000 | JP |
2000-243662 | Sep 2000 | JP |
2000-277380 | Oct 2000 | JP |
023862 | Jan 2001 | JP |
2001-203122 | Jul 2001 | JP |
2002-033237 | Jan 2002 | JP |
2002-161123 | Jun 2002 | JP |
2164257 | Jun 2002 | JP |
2003-272945 | Sep 2003 | JP |
2004-47707 | Feb 2004 | JP |
2004-228514 | Aug 2004 | JP |
2005-086676 | Mar 2005 | JP |
2005-264095 | Sep 2005 | JP |
2005-340371 | Dec 2005 | JP |
2006-053577 | Feb 2006 | JP |
2006-210590 | Aug 2006 | JP |
2006-332601 | Dec 2006 | JP |
2006-339536 | Dec 2006 | JP |
2009-267146 | Nov 2009 | JP |
2009-295602 | Dec 2009 | JP |
2001-0062384 | Jul 2001 | KR |
WO 0203405 | Jan 2002 | WO |
WO 03075295 | Sep 2003 | WO |
WO 2007049456 | May 2007 | WO |
WO 2008023496 | Feb 2008 | WO |
Entry |
---|
Search Report under Section 17 for Application No. GB0425961.0, Date of Search: Jan. 27, 2005. |
Search Report under Section 17 for Application No. GB0425963.6, Date of Search: Jan. 26, 2005. |
Translated Abstract of Japanese Patent No. 1-313804 cited above. |
Translated Abstract of Japanese Patent No. 6168845 cited above. |
Translated Abstract of Japanese Patent No. 2164257 cited above. |
Hung Van Trinh, “An Electrodeposition Method for Terminals of Multilayer Ceramic Capacitors,” Mar. 23, 2002 (a thesis submitted in partial satisfaction of the requirements for the degree Master of Science in Materials Science and Engineering, University of California-San Diego). |
European Search Report for Application No. GB0308656.8 dated May 6, 2004. |
European Search Report for Application No. GB0405993.7 dated Jul. 26, 2004. |
Hung Van Trinh and Jan B. Talbot, “An Electrodeposition Method for Terminals of Multilayer Ceramic Capacitors” CARTS 2003: 23rd Capacitor and Resistor Technology Symposium Mar. 31-Apr. 3, 2003. |
Hung Van Trinh and Jan B. Talbot, “Electrodeposition Method for Terminals of Multilayer Ceramic Capacitors,” Jun. 2003, vol. 86, No. 6, Journal of the American Ceramic Society. |
European Search Report for Application No. GB0308656.8 dated Sep. 8, 2005. |
English Abstract of Japanese Publication No. 01-293503 published Nov. 27, 1989. |
English Abstract of Japanese Publication No. 02-294007 published Dec. 5, 1990. |
English Abstract of Japanese Publication No. 09-129476 published May 16, 1997. |
May 8, 2009 Office Action issued in Chinese Patent Application No. 2007100847817 (in Chinese). |
Jun. 2, 2009 Office Action issued in Japanese Patent Application No. 2006-053577 (in Japanese). |
Aug. 11. 2010 Office Action issued in European Patent Application No. 07 004 051.4. |
Dec. 6, 2013 Office Action issued in German Patent Application No. 103 16 983.0 (in German). |
Details of JP 63-14621 published Jun. 18, 1988. |
English Translation of JP 63-169014 published Jul. 13, 1988. |
Details and translated Abstract of JP 64-54720 published Mar. 2, 1989. |
Details and translated Abstract of JP 03-178110 published Aug. 2, 1991. |
English Abstract of JP 4-268710 published Sep. 24, 1992. |
Details and translated Abstract of JP 06-069063 published Mar. 11, 1994. |
Details and translated Abstract of JP 08-264372 published Oct. 11, 1996. |
R.P. Prassad, Product Details-Table of Contents of Surface Mount Technology Principles and Practice (Second Edition), published Mar. 6, 1997 by Springer-Verlag New York, LLC. |
Details and translated Abstract of JP 09-129476 published May 16, 1997. |
English translation of JP 09-190946 published Jul. 22, 1997. |
English Abstract of JP 10-154632 published Jun. 9, 1998. |
Details and translated Abstract of JP 10-251837 published Sep. 22, 1998. |
Details and translated Abstract of JP 11-154621 published Jun. 8, 1999. |
English Abstract of JP 2000-107658 published Apr. 18, 2000. |
Details and translated Abstract of JP 2000-277380 published Oct. 6, 2000. |
Raymund Singleton, Plating Procedures-Barrel Plating, Metal Finishing Guidebook and Directory, 2001, p. 340-359. |
Details and translated Abstract of JP 2001-203122 published Jul. 27, 2001. |
Marc J. Madou, Fundamentals of Microfabrication: The Science of Miniaturization—Table of Contents, published 2002 by CRC Press. |
Details and translated Abstract of JP 2003-272945 published Sep. 26, 2003. |
Details and translated Abstract of JP 2004-047707 published Feb. 12, 2004. |
Details and translated Abstract of JP 2004-228514 published Aug. 12, 2004. |
English Abstract of JP 2005-086676 published Mar. 31, 2005. |
English Abstract of JP 2005-340371 published Dec. 8, 2005. |
Details and translated Abstract of JP 2006-210590 published Aug. 10, 2006. |
Details and translated Abstract of JP 2006-332601 published Dec. 7, 2006. |
English Abstract of JP 2006-339536 published Dec. 14, 2006. |
Details and translated Abstract of WO 2007/049456 published May 3, 2007. |
Declaration of Hung Van Trinh Under 37 CFR § 1.131 related to U.S. Appl. No. 10/267,983 dated Sep. 27, 2007 (now U.S. Pat. No. 7,345,868 issued Mar. 18, 2008). |
Details and translated Abstract of WO 2008/023496 published Feb. 28, 2008. |
English Abstract of JP 2009-267146 published Nov. 12, 2009. |
English Abstract of JP 2009-295602 published Dec. 17, 2009. |
Official Communication issued Feb. 23, 2010 in JP Patent Application No. 2007-270915, with English translation. |
Official Communication issued Feb. 8, 2012 in KR Patent Application No. 10-2011-0011354, with English translation. |
Oct. 24, 2013 Office Action issued in U.S. Appl. No. 13/832,476. |
Abstract of Japanese Patent—JP107335473, Dec. 22, 1995, 2 pages. |
Abstract of Japanese Patent—JP2000340448, Dec. 8, 2000, 2 pages. |
Number | Date | Country | |
---|---|---|---|
20050046536 A1 | Mar 2005 | US |
Number | Date | Country | |
---|---|---|---|
60372673 | Apr 2002 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 10409023 | Apr 2003 | US |
Child | 10951972 | US |