Claims
- 1. A method of making a semiconductor device comprising the successive steps of:
- (1) forming an anti-oxidation film pattern within a semiconductor substrate by ion implantation with a thin region of the semiconductor substrate remaining intact above the anti-oxidation film pattern so formed;
- (2) oxidizing the entire surface of the semiconductor substrate including the semiconductor layer on said anti-oxidation film pattern using the thus-formed anti-oxidation film pattern as a selective oxidation mask thereby leaving a resion of said substrate which is under said anti-oxidation film pattern unoxidized while protecting at least the brim portions of the anti-oxidation film pattern from exposure to the oxidizing atmosphere while producing a silicon dioxide coating adapted for use as a field oxide, and continuing the oxidation until the resultant oxidized regions adjacent and around the anti-oxidation film pattern, except those regions directly above it, have bottom faces deeper than the bottom face of said anti-oxidation film pattern in the semiconductor substrate while substantially suppressing irregular oxidation about the edges of the anti-oxidation film pattern;
- (3) removing said oxidized surface regions overlying said anti-oxidation film while only partially removing said oxidized regions formed directly on said semiconductor substrate thereby exposing the entire surface of said anti-oxidation film pattern; and thereafter
- (4) removing said anti-oxidation film.
- 2. A method of making semiconductor devices in accordance with claim 1, wherein
- said anti-oxidation film pattern is made of a silicon nitride film.
Priority Claims (3)
Number |
Date |
Country |
Kind |
55-66777 |
May 1980 |
JPX |
|
55-130935 |
Sep 1980 |
JPX |
|
55-179443 |
Dec 1980 |
JPX |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
This is a continuation of earlier application Ser. No. 264,206 filed May 15, 1981, now abandoned.
US Referenced Citations (6)
Non-Patent Literature Citations (1)
Entry |
Appels "Local Oxidation of Silicon . . . " Philips Res. Repts. 25, pp. 118-132, 1970. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
264206 |
May 1981 |
|