The present application claims priority from Japanese patent application No. JP 2004-172905 filed on Jun. 10, 2004, the content of which is hereby incorporated by reference into this application.
The present invention relates to a technique for manufacturing a semiconductor device and more specifically to a technique effectively applied to a photolithography technique for transferring a predetermined pattern to a semiconductor wafer (hereinafter abbreviated as “wafer”) by using a photo mask (hereinafter abbreviated as “mask”) in a manufacturing process of the semiconductor device.
In the manufacturing process of the semiconductor device, as a method for forming a fine pattern on the wafer, the photolithography technique has been employed. In this photolithography technique, a so-called optical projection exposure technique, in which a pattern formed on the mask is repeatedly transferred onto the wafer via a reduction projection optical system, has become the mainstream thereof.
A resolution R on the wafer in the optical projection exposure technique is generally expressed by R=k×λ/NA. Herein, “k” is a constant depending upon resist materials and processes, “i” is a wavelength of exposure light, and “NA” is the number of apertures of a projection exposure lens. As known from a relational expression of the resolution R, it is understood that a projection exposure technique for using a light source with a shorter wavelength is required as the fine pattern formed on the wafer is made fine. For example, by a projection aligner using an i ray of a mercury lamp (λ=365 nm), KrF excimer laser (λ=248 nm), or ArF excimer laser (λ=193 nm) as an illuminating light source, a semiconductor device is manufactured. In order to realize a further finer-pattern, an illuminating light source with a further shorter wavelength is required, so that adoption of, for example, an F2 excimer laser (λ=157 nm) is under examinations.
Meanwhile, as a mask used in the projection exposure technique, there is a structure of forming, as a shade film, a shade pattern made of a chrome film etc. on a quartz glass substrate (blank) transparent to an illumination light (exposure light). However, as the pattern to be transferred is made fine, masks including phase information of a phase shift mask and a half tone mask, etc. are widely used. Utilization of the masks including such phase information is supposed to increase in future.
In the phase shift mask, a processing for giving a phase difference to light permeating the adjacent patterns is carried out on the mask. A method used at present as the mainstream thereof is one in which: a pattern made of a chrome film is formed; thereafter the quartz glass substrate, on which a pattern area in which the chrome film is not formed is exposed, is scraped so that a phase of a transmitted light can be reversed; and adjustment is made so that the phase of the light permeating the adjacent transparent patterns can be reversed.
Herein, as a technique using the phase shift mask, Japan Patent Laid-open No. 11-072902 discloses a technique in which: a plurality of grooves with different depths are formed in a shifter disposing area of the quartz substrate; attenuated phase shifters made of the same semi-transparent materials are embedded in these grooves; and thereby an optical proximity effect is compensated with high accuracy to improve the resolution of the pattern.
Further, Japan Patent Laid-open No. 2000-010256 discloses a technique as described below. That is, large and small concaves (grooves) are formed on a transparent substrate, and a semi-transparent film is formed in these concaves. Then, the film thickness of the semi-transparent film is changed so that the light radiated to the small concave and an edge of the large concave can be permeated and the light radiated to a center of the large concave cannot be permeated. Thereby, the desired pattern is transferred onto a resist film formed on the wafer.
By the way, in recent years, a shade film made of a chrome film etc. is used in forming a relatively large-size pattern. However, the shade film made of a chrome film etc. is not used in forming a fine pattern and a method of forming the pattern using a transparent phase shifter has attracted attention. Since not using a chrome film for a relatively fine pattern, the method is called a Cr-less Phase-shift Lithography (CPL) (For example, see W. Conley, et. Al, “Application of CPL reticle technology for the 65- and 50-nm node” Proc. SPIE Vol. 5040, pp. 392 (2003)).
In the abovementioned CPL technology, the fine patter obtained by using the transparent phase shifter functions as a shade portion by a phase reverse effect at the edge of the pattern. However, if the transparent phase shifter is used also to the large-size pattern, the edge of the pattern becomes a shade portion. However, the transmitted light, whose phase is reversed, is not canceled at the center, so that the center does not function as a shade portion. Accordingly, it becomes difficult to form the desired pattern and a structure of forming the shade film made of a chrome file etc. becomes necessary in a large pattern portion in side.
Hereinafter, a method of manufacturing this chromeless phase shift mask will be described. First, a quartz glass substrate in which a chrome film is formed on a main surface thereof is prepared. Then, a positive type first electron beam sensitive resist film is applied on the chrome film, and thereafter an electron bean is radiated to a forming area for groove pattern. Then, by performing a developing processing thereto, a pattern in which the area radiated by the electron beam becomes an opening portion is formed.
Next, the chrome film exposed on a bottom of the opening portion is removed by dry etching (a first dry etching step). Further, the exposed quartz glass substrate by dry-etching the chrome film is scraped to a predetermined depth, whereby the groove pattern is formed (a second dry etching step). Even when this groove pattern is formed, the dry etching is employed. Note that a scraping amount of groove pattern is set to such a depth that the phase reverse effect can be obtained.
Subsequently, after the patterned positive type first electron beam sensitive resist film is removed, new negative type second electron beam sensitive resist films are applied onto the patterned chrome film and the groove pattern. An electron beam is radiated onto an area for forming a relatively large-size pattern (thick pattern). Next, by performing a normal developing processing thereto, a large-size pattern is formed on the second electron beam sensitive resist film. An area of the large-size pattern occupying in the quartz glass substrate is extremely small, and the second electron beam sensitive resist film is largely removed, and the lower chrome film is exposed at a removed region.
Thereafter, the exposed chrome film is removed by the dry etching (a third dry etching step), whereby a large-size pattern made of a chrome film is formed. Then, by removing the patterned second electron beam sensitive resist film, the chrome-less phase shift mask, in which a fine groove pattern having a phase shift effect and a large-size pattern made of the chrome film coexist, may be formed.
In the abovementioned steps, the dry etching step is required three times, whereby a mask manufacturing process becomes complicated and there arises a problem of defects in the mask due to foreign matters occurring in the dry etching steps. Especially, in the abovementioned third etching step, it is necessary to etch most of the chrome film, so that there easily arsis a problem of occurrence of the defects in the mask caused due to the foreign matters.
Further, in the abovementioned steps, the fine pattern and the large-size pattern are formed by separate electron beam drawings. Therefore, there is a problem such that the relative displacement of the fine groove pattern and the large-size pattern easily occurs.
An object of the present invention is to provide a method of manufacturing a semiconductor device by forming a desired pattern on a wafer using a high-precision mask capable of being manufactured in a simplified process.
The above and other objects and new features will be apparent from the description of this specification and the accompanying drawings.
Outlines of representative ones of inventions disclosed by the present application will be briefly described as follows.
A method of manufacturing a semiconductor device according to the present invention comprises the step of exposing a predetermined pattern on a photosensitive film formed on a semiconductor substrate by using a photo mask, wherein the photo mask includes: (a) a plurality of groove patterns formed in a blank; and (b) shade films formed in some ones among the plurality of groove patterns.
Effects obtained from representative ones of inventions disclosed by the present application will be briefly described as follows.
The desired pattern can be formed on the wafer by using the mask capable of being manufactured in the simplified process.
In the embodiments described below, the invention will be described in a plurality of sections or embodiments when required as a matter of convenience. However, these sections or embodiments are not irrelevant to each other unless otherwise stated, and the one relates to the entire or a part of the other as a modification example, details, a supplementary explanation or the like thereof.
Also, in the embodiments described below, when referring to the number of elements (including number of pieces, values, amounts, ranges, or the like), the number of elements is not limited to a specific number unless otherwise stated, or except the case where the number is apparently limited to a specific number in principle, or the like. The number larger or smaller than the specified number is also applicable.
Further, in the embodiments described below, it goes without saying that the components (including element steps or the like) are not always essential unless otherwise stated, or except the case where the components are apparently essential in principle, or the like.
Similarly, in the embodiments described below, when the shape of the components and the like, or the positional relation and the like thereof, or the like are mentioned, the substantially approximate and similar shapes and the like are included therein unless otherwise stated, or except the case where it can be conceived that they are apparently excluded in principle, or the like. This condition is also applicable to the numerical value and the range described above.
Also, components having the same functions are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.
Further, the drawings may be hatched in some cases in order to be understood easily even if not sectional views.
Hereinafter, embodiments of the present invention will be detailed with reference to the drawings.
As shown in
These groove patterns 5a and 5b serve as shade areas in the mask. Namely, because the groove patterns 5a and 5b are formed in the quartz glass substrate 1, exposure light permeating an area having no groove in the quartz glass substrate 1 and exposure light permeating an interior of the groove are canceled mutually, thereby becoming-shade areas. Namely, each depth of the groove patterns 5a and 5b is determined so that optical path length of the exposure light permeating the area having no groove and that of the exposure light permeating the groove are displaced 180 degrees in phase. Therefore, the exposure light permeating the area having no groove and the exposure light permeating the groove are canceled mutually.
Herein, a relation between a width of the groove pattern and a light intensity distribution obtained by the groove pattern and a relation between the width of the groove pattern and a pattern of a resist film to be formed are shown in FIGS. 3 to 6.
As seen from
In contrast,
As shown above, when the width of the groove pattern is as relatively large as 0.2 μm, the exposure light permeating the area having no groove and the exposure light permeating the interior of the groove are canceled mutually at the edges of the groove pattern. However, the light intensity of the exposure light permeating the area having no groove becomes small at the center of the groove pattern while that of the exposure light permeating the interior of the groove becomes large at the center of the groove pattern. As a result, the light intensity ratio of the exposed light remaining without being canceled becomes large, and the shade characteristic of the groove pattern deteriorates.
Thus, it is understood that when the permeating exposure light is shielded by the groove pattern, there is not any problem in forming a fine pattern, but when a certain level of large-size pattern is formed, the shade characteristic at the center deteriorates and the pattern of the resist film cannot be formed normally.
Accordingly, in a conventional technique, a groove pattern capable of obtaining a phase shift effect is used in forming a fine pattern and a shade pattern is formed by using a chrome film without forming the groove pattern in a large-size pattern. However, in such a mask, as mentioned previously, the dry etching must be carried out three times in the manufacturing process, so that the manufacturing process becomes complicated and defects in the mask occur easily since the foreign matters by the dry etching are generated. Further, the groove pattern and the shade pattern made of a chrome film are formed by the separate electron beam drawings, so that the relative displacement of the groove pattern and the large-size pattern occurs easily.
Therefore, as shown in
Thus, by using the groove pattern 5a capable of obtaining the phase shift effect in the entire groove when the fine pattern is formed, the preferable fine pattern can be formed. Concurrently, by using a pattern in which the shade film 6 is embedded in the groove pattern 5b when the large-size pattern is formed, the preferable pattern can be formed.
Further, in the groove pattern 5b in which the shade film 6 is embedded, because the edges thereof are determined by the groove pattern 5b, it is possible to reduce the influence by displacement of the embedded shade film 6 and the influence by size of the shade film 6.
The shade film 6 must have a characteristic of shielding the exposure light and, for example, an organic photosensitive resin film may be used. As the organic photosensitive resin film, there is, for example, a resist film exposed to the electron beam. As the shade characteristic of the shade film 6 to the exposure light, for example, a transmittance of the exposure light to the shade film is required to be 0.1% or below.
As explained above, the mask in the first embodiment has a structure comprising: the groove pattern 5a scraped in the quartz glass substrate 1 to form the fine pattern; the wide groove pattern 5b scrapped in the quartz glass substrate 1 to form the large-size pattern; and the shade film 6 with which the groove pattern 5b is filled. Further, in the mask, a shade pattern 8a around an element pattern forming area, mark patterns 8b for alignment of the aligner and mask, and an accessory pattern necessary for exposure are formed, wherein these patterns also are formed of groove patterns in which the shade films are embedded.
Note that, in a pattern other than the patterns for forming elements, when a shade characteristic of light different from the exposure light is required or when transmittance of detected light is high and the pattern is difficult to detect, a light absorbing agent etc. having the shade characteristic with respect to the light may be added to the shade film or a shade characteristic must be obtained by having such a structure that the pattern is formed into a shape of split with a resolution limit or less of the light. Namely, the shade film to be embedded in the groove pattern is required to have the shade characteristic to the exposure light. However, in patterns other than the element forming patterns such as the mark patterns for alignment with the aligner and the mask, etc., light different from the exposure light in kind may be employed. Therefore, in the patterns other than the element forming patterns, it is necessary to obtain the sufficient shade characteristic to the light different from the exposure light.
Next, a description will be made of an influence exerted on the transfer dimensions to the wafer by the displacement between the groove pattern 5b formed in the mask and the shade film 6 formed in this groove pattern 5b.
Herein, the shade film 6 is formed through a patterning processing by the electron beam writer, and positioning precision of the normally used electron beam aligner is approximately 30 nm. Therefore, the displacement amount P1 of the shade film 6 becomes approximately 30 nm in consideration of the positioning precision of the electron beam aligner. At this time, it is understood that the fluctuation amount of the pattern dimension transferred to the wafer is approximately 2 nm from
Next, a description will be made of an influence exerted on the transfer dimension to the wafer by the fluctuation of the pattern dimension of the shade film 6 formed in the groove pattern 5b.
As shown in
Next, in the mask in the first embodiment, the groove pattern 5a is used for forming the fine pattern and the groove pattern 5b in which the shade film 6 is embedded in forming the large-size pattern is used. However, a description will be made of a border between the case of forming a transfer pattern by using the groove pattern 5a and the case of forming a transfer pattern by using the groove pattern 5b in which the shade film 6 is embedded. Namely, an evaluation is made of: using the groove pattern 5a, by which the phase shift effect is obtained, at which level a dimension of the transfer pattern is; or using the groove pattern 5b, in which the shade film 6 is embedded, at or beyond which level a dimension of the transfer pattern is.
The conditions used for transfer are shown below. First, as exposure light, an ArF excimer laser with a wavelength of 193 nm is used; and a lens of an optical system has an aperture of 0.7; an illumination shape is like a ring band; a σ ratio is 0.85/0.57; and a resist film to be transferred has a thickness of 0.2 μm.
As seen from
In the same manner, also in the case where the exposure dose is 40 (mJ/cm2), until the width of the groove pattern 5a reaches approximately 0.09 (μm), the transfer pattern is formed normally. However, when the width of the groove pattern 5a exceeds approximately 0.09 (μm), the width of the transfer pattern does not increase but decreases. Therefore, it is understood that the transfer pattern cannot be formed normally.
In the case where the exposure dose is 30 (mJ/cm2), as the width of the groove pattern 5a is increased from approximately 0.05 (μm) to approximately 0.075 (μm), the dimension of the transfer pattern accordingly increases from approximately 0.06 (μm) to approximately 0.10 (μm). Accordingly, until the width of the groove pattern 5a reaches 0.075 (μm) in the converted value on wafer, the transfer patter can be normally formed. However, as the width of the groove pattern 5a is increased beyond 0.075 (μm), the width of the transfer pattern does not decrease and the width of the transfer pattern increases only slightly with respect to an increase in the width of the groove pattern 5a. For this reason, it is understood that when the exposure dose is 30 (mJ/cm2), the width of the pattern capable of being transferred normally by the groove pattern 5a is 0.10 (μm) or below.
Next,
From the above descriptions, for example, in the case where the exposure dose is 30 (mJ/cm2), when the transfer pattern is formed until its width reaches 0.1 (μm), the groove pattern 5a may be used as a mask, and when the transfer pattern with a width of 0.1 (μm) or more is formed, the groove pattern 5b in which the shade film 6 is embedded may be used as a mask.
Next, a method for manufacturing a mask in the first embodiment will be described with reference to the drawings.
As shown in
Subsequently, as shown in
In this case, in performing the developing processing, the conductive film 3 formed on the resist film 2 is removed. Namely, the conductive film 3 made of, for example, a water-soluble organic film is removed by a developer. As the conductive film 3, for example, espacer (manufactured by Showa Denko KK), Aquasave (manufactured by Mitsubishi Rayon Co., Ltd.), or the like is employed.
Further, the conductive film 3 is electrically connected to the ground of the electron beam writer for radiating electron beams, whereby the resist film 2 is prevented from being charged at the time of radiating the electron beams onto the resist film 2. Therefore, it is possible to prevent drawbacks such as abnormality of each pattern shape and a displacement of patterns of the resist film 2.
Next, as shown in
Note that since the groove patterns 5a and 5b are formed respectively so as to correspond to the pattern portions 4a and 4b formed in the resist film 2, the width of the groove pattern 5a is relatively narrow and that of the groove pattern 5b is relatively wide.
Subsequently, by removing the patterned resist film 2, as shown in
However, as the groove pattern 5b formed in this phase shift mask becomes wide, the shade characteristic thereof becomes insufficient and the normal transfer pattern cannot be formed. Therefore, in the first embodiment, by the step as shown below, the resist film (second resist film) 6a to be a shade film is formed in the groove pattern 5b. Namely, as shown in
The resist film 6a is formed on the quartz glass substrate 1 by using, for example, a spin coat method etc. This resist film 6a is required to have a characteristic of absorbing the exposure light, such as a KrF excimer laser, ArF excimer laser, or F2 laser and concurrently to have a characteristic sensitive to electron beams. Namely, the resist film 6a is required to be formed in the groove pattern 5b and have a characteristic of shielding the exposure light when the mask is used. At the same time, the resist film 6a is required to have a characteristic sensitive to the exposure light since patterning of the resist film 6a is carried out by, for example, the electron beam in forming the mask.
More specifically, the resist film 6a has been formed of a novolac system resist film with a thickness of, for example, 200 nm. However, the present invention is not limited to this film. For example, the resist film 6a may contain a copolymer of α-methyl styrene and α-chloro acrylic acid, a novolac resin and quinone diazide, a novolac resin and poly methyl penten-1-sulfone, chloro methyl polystyrene, or the like as a main component or contain a naphthol phenyl resin and naphthol-novolac resin, a naphthol acrylate resin, or an antrasen added-novolac resin as a main component. Further, for example, a mixture of a phenol resin such as a polyvinyl phenol resin or a novolac resin and inhibiter and acid generator, a so-called chemical amplitude type resist film may be used.
The above materials of the above resist film 6 are ones for shielding a vacuum ultraviolet ray with a wavelength of 200 nm or below. However, the present invention is not limited to this. For example, in the case of shielding the KrF excimer laser with a wavelength of 248 nm, other materials for the resist film 6a may be employed, or a light absorbing agent or light shielding agent may be added to the resist film 6a.
Note that a material of the resist film 6a is not limited to the above materials and can be variously modified so long as it has a shade characteristic to a light source of the projection aligner and has a sensitive characteristic to a light source of a pattern writer used in the mask manufacturing process, for example, to an electron beam. Further, it is not limited to the above film with a thickness of 200 nm either.
Subsequently, after the resist film 6a is formed on the quartz glass substrate 1, a conductive film (second conductive film) 7 is formed on the resist film 6a. The conductive film 7 is formed for preventing charge by the electron beam at a time of making the electron beam drawing as described later, and is made of, for example, a water-soluble organic film etc. in the same manner as the abovementioned conductive film 3.
Next, by performing the developing processing after the electron beam is radiated onto a predetermined area of the resist film 6a, the shade film 6 (resist film 6a ) is left only in the relatively wide groove pattern 5b, as shown in
Since the patterning of the resist film 6a is carried out so as to match a location of the groove pattern 5b, an engagement allowance is taken in the patterning of the resist film 6a. Accordingly, the width of the resist film 6a to be embedded in the groove pattern 5b is smaller than that of the groove pattern 5b.
Note that since a peripheral portion of the mask (outside of the element pattern forming area) becomes a contact portion to the projection aligner, the resist film 6a is removed therefrom and thereby occurrence of foreign matters caused by peeling and cracks etc. of the resist film 6a due to a mechanical impact is prevented.
Herein, by using, for example, a negative type resist film as the resist film 6a, a mask can be manufactured by a Quick Turn Around Time (Q-TAT). Namely, as mentioned previously, since the occurrence of the foreign matters is caused by leaving the resist film 6a outside the element pattern forming area, it is necessary to remove the resist film 6a located outside the element pattern forming area. At this time, if the resist film 6a is a positive type resist film, the area drawn by the electron beams is removed by the developing processing. Therefore, it is necessary to be drawn by the electron beam also with respect to most of the area located outside the element forming pattern area, so that it takes time. In contrast, if a negative type resist film is used as the resist film 6a, the area not drawn by the electron beam is removed by the developing processing. Accordingly, in the main surface of the mask, it is preferable to draw only a relatively small area (pattern forming area) by the electron beams. For this reason, the drawing area can be made small and the drawing time can be shortened.
Further, after performing a processing for leaving the resist film 6a only in the groove pattern 5b, a so-called hardening processing of the resist film may be carried out. The hardening processing can be performed by, for example, a processing for adding a heat treatment or a processing for strongly radiating an ultraviolet ray. By this hardening processing, it is possible to improve durability of the resist film 6a wit respect to exposure light irradiation during use of the mask.
Thus, the mask in the first embodiment, in which the relatively narrow groove pattern 5a and the relatively wide groove pattern 5b are formed and the shade film 6 made of the resist film 6a is formed only in the groove pattern 6b, can be formed.
According to the method of manufacturing the mask according to the first embodiment, since the dry etching step is employed only in a step of forming the groove patterns 5a and 5b in the quartz glass substrate 1, the number of dry etching steps is reduced in comparison with a conventional mask manufacturing method. Namely, in the case of forming the groove pattern and the shade pattern made of a chrome film similarly to the conventional mask, the dry etching step is required three times. However, the first embodiment can be obtained by using the dry etching step only once.
Accordingly, in the first embodiment, it is possible to simplify the mask manufacturing process and suppress defects in the mask, which are caused from the foreign matters occurring in the dry etching step. Further, since the mask manufacturing process can be simplified, it is possible to shorten a Turn Around Time (TAT) and further improve a yield thereof.
Further, in the conventional mask, since the groove pattern and the shade pattern made of a chrome film are formed by the separate electron beam drawings, a relative displacement occurs easily between the groove pattern and the shade pattern made of a chrome film. However, in the present embodiment, since the relatively narrow groove pattern 5a and the relatively wide groove pattern 5b are formed by one electron bean drawing, the relative displacement can be prevented between the groove pattern 5a and the groove pattern 5b.
Note that, in order to prevent the resist film 6a formed in the groove pattern 5b from being oxidized in the mask manufactured in the first embodiment, it is effective to put a pattern forming surface of the mask in an inorganic gas atmosphere such as a nitrogen gas (N2).
Further, a patterning method of forming the resist film 6a only in the groove pattern 5b is not limited to the abovementioned drawing method by the electron beams and, for example, the resist film 6a may be patterned by a ultraviolet ray with a wavelength of 230 nm or more (for example, an i ray (wavelength of 365 nm)).
The gist of the present invention is to provide a practical mask structure of the Cr-less phase shift mask. Accordingly, another wavelength to be an object of the exposure light radiated in using the mask, another material of the resist film 6a, and another material of a mask substrate may be employed. Further, in the first embodiment, the resist film 6a is used as the shade film 6. However, the present invention is not limited to this and may use a material other than the resist film 6a so long as the material has a shade characteristic.
Next, a projection aligner (scanner) used for the mask according to the first embodiment will be explained with reference to the drawings.
A wafer 9 is vacuum-absorbed onto a sample stand 10j. The sample stand 10j is disposed on a movable Z stage 10k in a light-axis direction of the projection lens 10g, namely, in a direction perpendicular to a wafer arrangement surface of the sample stand 10j. Further, the Z stage 10k is disposed on a movable XY stage 10m in a direction parallel with the wafer arrangement surface of the sample stand 10j.
The Z stage 10k and the XY stage 10m are driven respectively by driving units 10p and 10q according to control commands from a main control system 10n, thereby being able to move the wafer 9 to a desired exposure position. The-desired exposure position is precisely monitored by a laser measuring device 10s, as a position of a mirror 10r fixed to the Z stage 10k. Further, a surface position of the wafer 9 is measured by focus position detecting means the normal aligner has. And, by driving the Z stage 10k according to the measurement result, the main surface of the wafer 9 can be made to coincide with an imaging surface of the projection lens 10g.
The mask 1A and the wafer 9 are driven in synchronization according to a reduced magnification. Since an exposure light area scans the main surface of the mask 1A, the mask pattern is scaled down and transferred onto a resist film formed on the main surface of the wafer 9. At this moment, the position of the main surface of the wafer 9 is also dynamically driven and controlled with regard to the scanning of the wafer 9 by the above-mentioned means. In the case where the mask pattern on the mask 1A is overlapped onto a circuit pattern formed on the wafer 9 and is exposed, a position of a mark pattern formed on the wafer 9 is detected by using an alignment detection optical system 10t and the wafer 9 is positioned based on a detection result, whereby the mask pattern is overlapped and transferred onto the mark pattern. Note that the main control system 10n is electrically connected to a network device 10u so that it can remotely monitor conditions of the scanner 10.
In a scanning exposure processing utilizing the scanner 10, the respective main surfaces of the mask 1A and the wafer 9 are moved in relatively reversed directions in a state where they are kept in parallel. Namely, the mask 1A and the wafer 9 are in relation of mirror symmetry, so that, during the exposure processing, a scan direction of the mask 1A and that of the wader 9 become reversed like the stage scan directions G and H shown by arrow marks in
Though not limited specifically, the width (short-directional dimension) of the slit 10fs is normally, for example, approximately 4 mm to 7 mm on the wafer 9. The slit-shaped exposure light area is continuously moved (scanned) in a width direction (short direction) of the slit 10fs, i.e., in a direction orthogonal or diagonal to a longitudinal direction of the slit 10fs, and further the exposure light is radiated onto the main surface of the wafer 9 via an imaging optics (projection lens 10g). Thereby, the mask pattern of the mask 1A can be transferred to each of a plurality of chip areas CA on the wafer 9. Note that, in this case, although only portions necessary for explaining a function of the scanner 10 are shown, the other portions necessary for the ordinary scanner are the same as those in an ordinary range.
Next, a description will be made of an example of a manufacturing process for a semiconductor device using the mask according to the first embodiment. The manufacturing process of this semiconductor device includes a photolithography step of transferring the pattern of the mask according to the first embodiment onto the wafer by the above-mentioned aligner.
The gate electrode 12A is shared by the n-channel type MISFET Qn and the p-channel type MISFET Qp. The gate electrode 12A is constituted by, for example, a poly side structure in which a silicide film is provided on a top of a simple film of low-resistance poly silicon or a low-resistance poly silicon film, or a poly metal structure in which a barrier film such as a tungsten nitride film is formed on a low-resistance poly silicon film and a metal film such as a tungsten film is formed on this barrier film. A semiconductor substrate portion under the gate electrode 12A becomes a channel area.
A wiring 13A is a power wiring on a high-potential (e.g., approximately 3.3 V or 1.8 V) side, and this power wiring is electrically connected to p-type semiconductor areas 11p of the two p-channel type MISFETs Qp via contact holes CNT. Further, a wiring 13B is a power wiring on, for example, a low-potential (e.g., approximately 0V) side, and this power wiring is electrically connected to an n-type semiconductor areas 11n of the one n-channel type MISFET Qn via the contact hole CNT.
A wiring 13C is an input wiring of a two-input NAND gate circuit, and this input wiring contacts with a wide portion of the gate electrode 12A and is electrically connected thereto via the contact hole CNT. A wiring 13D is electrically connected to both of the n-type semiconductor area 11n and the p-type semiconductor area lip via the contact holes CNT. A wiring 14A is electrically connected to the wiring 13D via a through hole TH.
Next, by using a sectional view taken along the dot line in
First, as shown in
Subsequently, by the scanner 10 using a mask in which an element separation groove forming pattern is formed, the exposure processing is performed onto the resist film 17 and thereafter the developing processing is carried out. Thereby, as shown in
Next, as shown in
Then, as shown in
Next, after a resist film is applied on the main surface of the semiconductor substrate 9S, an exposure processing is performed onto the semiconductor substrate 9S by the scanner 10 utilizing an n-type well forming-mask. Thereby, as shown in
In the same manner, after a resist film is applied onto the main surface of the semiconductor substrate 9S, the exposure processing is performed onto the semiconductor substrate 9S by the scanner 10 utilizing a p-type well forming mask. Thereby, as shown in
Subsequently, as shown in
Next, after a resist film (photosensitive film) is applied onto the conductive film 12, the exposure processing is carried out onto the semiconductor substrate 9S by the scanner utilizing the gate electrode forming mask. Thereby, as shown in
To form the resist pattern 17d having such a shape, a pattern as shown in
Note that the above-mentioned mask for forming the gate electrode pattern may be formed as shown below. That is, as shown in
As shown in
Subsequently, as shown in
Next, as shown in
Subsequently, as shown in
Thereafter, as shown in
According to the first embodiment, a Cr-less phase shift mask formed by the groove pattern 5a and the groove pattern 5b in which the shade film made of, for example, a resist film is embedded is used as a gate electrode forming mask, whereby a cost of the mask is reduced. Namely, since the mask according to the first embodiment can be formed in the simplified process, a mask price is reduced. Especially, the mask according to the first embodiment is suitable for a small amount of various kinds of semiconductor devices that requires reducing the mask price.
In a second embodiment, a modified example of the first embodiment will be described.
In the second embodiment, after a mask having the same structure as that shown in
Thereby, the influence of displacement of the shade film 6 with respect to the groove pattern 5b can be removed, and the mask can be formed with high precision. Further, because a side wall (side surface) of the shade film 6 contacts with the quartz glass substrate 1, oxygen is hardly supplied to a side surface of the shade film 6. Accordingly, when an ultraviolet ray serving as exposure light is radiated onto the mask, a reaction of the shade film 6 and oxygen is suppressed and consequently fluctuations in mask dimensions during use of the mask can be suppressed.
As described above, the invention made by the present inventors has been specifically described based on the embodiments. However, needless to say, the present invention is not limited to the above embodiments and may be variously altered and modified without departing from the gist thereof.
In the first embodiment, an example of using the normal aligner has been explained. However, the mask according to the first embodiment may also be used in an aligner employing, for example, a liquid immersion exposure technique. Generally, the resolution of the aligner is in proportion with the wavelength of illumination light and in reverse proportion with the number of apertures of lens. Meanwhile, the number of apertures of lens is in proportion with a refraction factor of a medium n through which the exposure light passes. Normally, the medium, through which exposure light passes, is air and therefore n=1. However, in the liquid immersion exposure technique, the medium, through which the exposure light passes, is pure water and therefore n=1.44 (when the light source is an ArF excimer laser). Accordingly, if the mask according to the first embodiment is used in a liquid immersion aligner, the resolution can be further improved in comparison with the case of using the normal aligner.
The present invention may be used widely in a manufacturing field of semiconductor devices.
Number | Date | Country | Kind |
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2004-172905 | Jun 2004 | JP | national |