Patent Application
20170162402
The disclosure relates to a method of manufacturing a semiconductor structure. More particularly, the disclosure relates to a method using an additional polish stop layer for a chemical mechanical planarization (CMP) process.
In the manufacturing of a semiconductor device, several forming processes and several removing processes are typically included. CMP process, being one kind of the removing processes, has been widely used. However, as the structures comprising high aspect ratio features (such as fins) are developed, a desired planarization is more difficult to be obtained by the CMP process. In the regions where the high aspect ratio features are formed, the remaining layers may be thicker, while in other regions, the remaining layers may be thinner. That is, “dishing” may be caused by the CMP process. Such a dishing, even having a depth lower than 30 Å, may be disadvantageous for the following processes.
In this disclosure, a method is provided to reduce the effect of the dishing caused by the CMP process. More specifically, in the method according to embodiments of this disclosure, an additional polish stop layer for a chemical mechanical planarization (CMP) process is provided.
According to some embodiments, a method of manufacturing a semiconductor structure comprises the following steps. First, a preliminary structure is provided. The preliminary structure has a first region and a second region, and the preliminary structure comprises a plurality of features in the first region. Then, a first polish stop layer is formed on the preliminary structure. The first polish stop layer comprises a concave portion in the second region, and the concave portion defines an opening. A first overlying layer is formed on the first polish stop layer. Thereafter, a second polish stop layer is formed on the first overlying layer. The second polish stop layer has a graduated change in composition. The second polish stop layer comprises a concave portion at least partially formed in the opening. A second overlying layer is formed on the second polish stop layer.
In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically shown in order to simplify the drawing.
The embodiments of the method of manufacturing a semiconductor structure will be described more fully hereinafter with reference to accompanying drawings. It is noted that, for clarity, the elements in the figures may not be shown according to their real relative sizes.
Then, as shown in
The first overlying layer 116 and the second overlying layer 120 may be formed of oxide. In one embodiment, the first overlying layer 116 has a thickness t1 being about a quarter of the total thickness t2 of the first overlying layer 116, the second polish stop layer 118 and the second overlying layer 120. In one embodiment, the thickness t1 is close to a height h of the portions of the features 104 that extend above the dielectric layer 108. According to some embodiments, the thickness t2 may be about 600 Å to about 3000 Å.
The second polish stop layer 118 is used as a buffer layer for the following CMP process. The second polish stop layer 118 has a graduated change in composition. Preferably, a material of the second polish stop layer 118 may be chosen according to materials of the first polish stop layer 112 as well as the first and second overlying layers 116 and 120. For example, the first polish stop layer 112 may be formed of silicon nitride, the first and second overlying layers 116 and 120 may be formed of oxide, and the second polish stop layer 118 may be formed of silicon oxynitride. As such, a better buffer effect can be provided.
Further, a composition of the second polish stop layer 118 at an interface of the second polish stop layer 118 and the first overlying layer 116 (such as at point 1181) may be closer to a composition of the first overlying layer 116 than a composition of the second polish stop layer 118 at a middle portion of the second polish stop layer 118 (such as at point 1184), and a composition of the second polish stop layer 118 at an interface of the second polish stop layer 118 and the second overlying layer 120 (such as at point 1187) may be closer to a composition of the second overlying layer 120 than the composition of the second polish stop layer 118 at the middle portion of the second polish stop layer 118 (such as at point 1184). For example, at points 1181-1187, the ratio of silicon oxide:silicon nitride in the second polish stop layer 118 formed of silicon oxynitride may be 3:1, 2:1, 1:1, 1:2, 1:1, 2:1 and 3:1, respectively. By such composition arrangement, better interfaces between the second polish stop layer 118 and the first overlying layer 116 as well as between the second polish stop layer 118 and the second overlying layer 120 can be provided.
The second polish stop layer 118 comprises a concave portion 118c at least partially formed in the opening 114, so as to provide the buffer effect during the following CMP process. For example, the second polish stop layer 118 may have a bottom surface 118b in the second region A2 lower than a top surface 112t of the first polish stop layer 112 in the first region A1. Further, in this disclosure, even only the bottom surface 118b in the second region A2 “touches” the opening 114, it is still seen that the concave portion 118c of the second polish stop layer 118 is partially formed in the opening 114. One example is that the thickness t1 of the first overlying layer 116 is substantially equal to the depth d of the opening 114. It is to be noted that the second polish stop layer 118 should not directly contact the first polish stop layer 112 (i.e., the thickness t1 of the first overlying layer 116 being zero) since the second polish stop layer 118 cannot properly provide the buffer effect in such case.
Thereafter, as shown in
In summary, in the method according to embodiments of this disclosure, an additional polish stop layer (i.e., the second polish stop layer 118) is provided, and particularly may be inserted into the layer to be removed by a following CMP process. The additional polish stop layer can have a buffer effect in the following CMP process. As such, the effect of the dishing caused by the CMP process, which is generally formed in a structure comprising high aspect ratio features, can be reduced. Following processes, such as a lithography process, can be conducted without pattern deformation.
It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed embodiments. It is intended that the specification and examples be considered as exemplary only, with a true scope of the disclosure being indicated by the following claims and their equivalents.
