Method of manufacturing semiconductor device

Abstract

Provided is a method of manufacturing a semiconductor device in which, when a polyimide resin film is formed as a protective film on a front surface of a semiconductor chip, the polyimide resin film disposed on scribe lines is removed and the polyimide resin film disposed on a circumferential portion of the semiconductor wafer is also removed. Thus, when a rear surface of the semiconductor wafer is ground, the outer circumferential portion of the semiconductor wafer and the surface protective tape can be completely bonded to each other, thereby making it possible to fill a gap between the surface protective tape and each scribe line formed on the front surface of the semiconductor wafer, prevent grinding wafer from penetrating into the gap when the rear surface of the semiconductor wafer is ground, and prevent the scribe lines and the front surface of the semiconductor chip from being contaminated with grinding swarf.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a diagram showing a semiconductor wafer in which semiconductor chips are mounted by a method of manufacturing a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a diagram showing a mask arrangement for manufacturing semiconductor chips by the method of manufacturing a semiconductor device according to the first embodiment of the present invention;

FIG. 3 is a diagram showing a semiconductor wafer in which semiconductor chips are mounted by a method of manufacturing a semiconductor device according to a second embodiment of the present invention;

FIG. 4 is an enlarged sectional view of scribe lines formed in an outer circumferential portion of a semiconductor wafer when surface protective tape is bonded to the semiconductor wafer by the method of manufacturing a semiconductor device according to the first embodiment of the present invention;

FIG. 5 is an enlarged sectional view of each trench made by scribe lines in an outer circumferential portion of a semiconductor wafer when surface protective tape is bonded to the semiconductor wafer by the method of manufacturing a semiconductor device according to the first embodiment of the present invention;

FIG. 6 is an enlarged sectional view of each trench made by scribe lines in an outer circumferential portion of a semiconductor wafer when surface protective tape is bonded to the semiconductor wafer by a method of manufacturing a semiconductor device according to a conventional art; and

FIG. 7 is a diagram showing a semiconductor wafer in which semiconductor chips are mounted by a method of manufacturing a semiconductor device according to the conventional art.

Claims

1. A method of manufacturing a semiconductor device, comprising the steps of: forming a passivation film made of a polyimide resin film on a front surface of a semiconductor wafer;removing the passivation film which is disposed on a scribe line of the semiconductor wafer and on an outer circumferential portion of the semiconductor wafer; andbonding protective tape onto the front surface of the semiconductor wafer, and grinding a rear surface of the semiconductor wafer.

2. A method of manufacturing a semiconductor device according to claim 1, wherein the step of removing the passivation film comprises a step of determining a region in which the passivation film is removed by proximity exposure.

3. A method of manufacturing a semiconductor device according to claim 1, wherein the step of removing the passivation film further comprises a step of removing a polyimide resin film disposed on a defective chip provided in an outer circumferential portion of the semiconductor wafer.