Number | Date | Country | Kind |
---|---|---|---|
3-283902 | Oct 1991 | JPX |
Number | Date | Country |
---|---|---|
0287258 | Dec 1986 | JPX |
2193034 | Jan 1988 | GBX |
Entry |
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"Process Interaction for 64M DRAM using an Asymmetrical Stacked Trench Capacitor (AST) Cell" IEDM 90 pp. 647-650. |
"A 4.2 um.sup.2 Half-Vcc Sheath Plate Capacitor DRAM Cell with Self-Aligned Buried Plate-Wiring" IEDM pp. 332-335. |
Denshi Zairyo (Electronic Material) Jun. 1991, pp. 37-43. |