Claims
- 1. A method of modifying a processed semiconductor wafer containing topographical features comprising the steps of:
- (a) contacting an exposed surface of the processed semiconductor wafer with a three-dimensional, textured, fixed abrasive article comprising a plurality of abrasive particles and a binder arranged in the form of a pattern; and
- (b) relatively moving said wafer and said fixed abrasive article in the presence of a liquid medium to chemically and mechanically modify said surface of said wafer.
- 2. A method according to claim 1 comprising contacting said surface with said fixed abrasive article at a pressure no greater than about 10 psi.
- 3. A method according to claim 1 comprising contacting said surface with said fixed abrasive article in the presence of a liquid.
- 4. A method according to claim 3 comprising contacting said surface with said fixed abrasive article in the presence of a liquid having a pH of at least about 5.
- 5. A method according to claim 3 comprising contacting said surface with said fixed abrasive article in the presence of a liquid having a pH of about 5 to about 8.
- 6. A method according to claim 3 comprising contacting said surface with said fixed abrasive article in the presence of a liquid having a pH of about 8 to about 13.
- 7. A method according to claim 3 wherein said liquid comprises water.
- 8. A method according to claim 1 wherein said exposed surface comprises a metal oxide.
- 9. A method according to claim 1 wherein said exposed surface comprises silicon dioxide.
- 10. A method according to claim 1 wherein the processed semiconductor wafer is a blanket wafer.
- 11. A method according to claim 1 comprising relatively moving said wafer and said fixed abrasive article to modify said surface of said wafer to create a surface having an Ra value of no greater than about 20 Angstroms.
- 12. A method according to claim 1 comprising relatively moving said wafer and said fixed abrasive article to modify said surface of said wafer to create a surface having an Ra value of no greater than about 15 Angstroms.
- 13. A method according to claim 1 comprising relatively moving said wafer and said fixed abrasive article to modify said surface of said wafer to create a surface having an Ra value of no greater than about 10 Angstroms.
- 14. A method according to claim 1 comprising relatively moving said wafer and said fixed abrasive article to achieve an average cut rate of at least about 500 Angstroms/minute to modify said surface of said wafer.
- 15. A method according to claim 1 comprising relatively moving said wafer and said fixed abrasive article to achieve an average cut rate of at least about 1,000 Angstroms/minute to modify said surface of said wafer.
- 16. A method according to claim 1 comprising relatively moving said wafer and said fixed abrasive article to achieve an average cut rate of at least about 1,500 Angstroms/minute to modify said surface of said wafer.
- 17. A method according to claim 1 comprising relatively moving said wafer and said fixed abrasive article to achieve an average cut rate of at least about 2,000 Angstroms/minute to modify said surface of said wafer.
- 18. A method according to claim 1 wherein said fixed abrasive article comprises a backing having a surface comprising said abrasive particles and said binder in the form of an abrasive coating.
- 19. A method according to claim 18 wherein said backing comprises a polymer film.
- 20. A method according to claim 18 wherein said backing further comprises a primer for enhancing adhesion between said abrasive coating and said backing.
- 21. A method according to claim 1 wherein said abrasive particles have an average particle size no greater than about 5 micrometers.
- 22. A method according to claim 1 wherein said abrasive particles have an average particle size no greater than about 1 micrometer.
- 23. A method according to claim 1 wherein said abrasive particles have an average particle size no greater than about 0.5 micrometer.
- 24. A method according to claim 1 wherein said abrasive particles have a Mohs hardness value no greater than about 8.
- 25. A method according to claim 1 wherein said abrasive particles comprise metal oxide particles.
- 26. A method according to claim 25 wherein said metal oxide particles comprise ceria.
- 27. A method according to claim 1 wherein said abrasive particles consist essentially of ceria particles.
- 28. A method according to claim 1 wherein said abrasive article further comprises filler particles.
- 29. A method according to claim 28 wherein said filler particles are selected from the group consisting of carbonates, silicates, and combinations thereof.
- 30. A method according to claim 28 wherein said filler particles are selected from the group consisting of magnesium silicates, aluminum silicates, calcium silicates, and combinations thereof.
- 31. A method according to claim 28 wherein said filler particles comprise calcium carbonate particles.
- 32. A method according to claim 28 wherein said filler particles comprise plastic filler particles.
- 33. A method according to claim 1 wherein said binder comprises a thermoset organic polymer resin.
- 34. A method according to claim 1 wherein said binder comprises an acrylate or methacrylate polymer resin.
- 35. A method according to claim 1 wherein said binder comprises a ceramer binder comprising colloidal metal oxide particles in an organic polymer resin.
- 36. A method according to claim 1 wherein said binder further comprises a plasticizer in an amount sufficient to increase the erodibility of said abrasive article relative to the same abrasive article in the absence of said plasticizer.
- 37. A method according to claim 36 wherein said binder comprises at least about 25% by weight of said plasticizer based upon the weight of plasticizer plus resin.
- 38. A method according to claim 36 wherein said binder comprises said plasticizer in an amount ranging from about 40% by weight to about 75% by weight based upon the weight of plasticizer plus resin.
- 39. A method according to claim 36 wherein said plasticizer comprises a phthalate ester or derivative thereof.
- 40. A method according to claim 1 wherein said fixed abrasive article is erodible.
- 41. A method according to claim 1 wherein said fixed abrasive article comprises a plurality of abrasive composites and a binder in the form of a predetermined pattern.
- 42. A method according to claim 41 wherein said abrasive composites comprise precisely shaped abrasive composites.
- 43. A method according to claim 41 wherein substantially all of said abrasive composites have substantially the same shape.
- 44. A method according to claim 41 wherein said abrasive composites have a shape selected from the group consisting of cubic, cylindrical, prismatic, rectangular, pyramidal, truncated pyramidal, conical, truncated conical, cross, post-like with a flat top surface, hemispherical, and combinations thereof.
- 45. A method according to claim 41 wherein said abrasive composites are in the form of truncated pyramids.
- 46. A method according to claim 41 wherein said abrasive composites are spaced apart from each other.
- 47. A method according to claim 41 wherein substantially all of said composites have substantially the same shape.
- 48. A method according to claim 41 wherein said abrasive composites have a height no greater than about 250 micrometers.
- 49. A method according to claim 41 wherein said abrasive surface comprises at least about 1,200 abrasive composites per square centimeter.
- 50. A method according to claim 41 wherein fixed abrasive article comprises a backing having a surface comprising said abrasive composites in the form of a coating, each of said abrasive composites having substantially the same orientation relative to said backing.
- 51. A method according to claim 1 wherein said abrasive article is secured to a sub pad.
- 52. A method of modifying an exposed surface of a semiconductor wafer comprising the steps of:
- (a) contacting said surface with a three-dimensional, textured, fixed abrasive article comprising a plurality of precisely shaped abrasive composites and a binder; and
- (b) relatively moving said wafer and said fixed abrasive article to modify said surface of said wafer.
- 53. A method of modifying an exposed surface of a semiconductor wafer comprising the steps of:
- (a) contacting said surface with a three-dimensional, textured, fixed abrasive article comprising a plurality of abrasive particles and a binder comprising a resin and a plasticizer in an amount sufficient to increase the erodibility of said abrasive article relative to the same abrasive article in the absence of said plasticizer; and
- (b) relatively moving said wafer and said fixed abrasive article to modify said surface of said wafer.
- 54. A method according to claim 52 comprising at least 25% by weight of said plasticizer based upon the combined weight of said plasticizer and said resin.
- 55. A method according to claim 52 comprising between about 40% and about 75% by weight of said plasticizer based upon the combined weight of said plasticizer and said resin.
- 56. A method of modifying an exposed surface of a semiconductor wafer comprising a metal oxide,
- said method comprising the steps of:
- (a) contacting said surface with a three-dimensional, textured, erodible, fixed abrasive article comprising a plurality of abrasive particles and a binder arranged in the form of a pre-determined pattern; and
- (b) relatively moving said wafer and said fixed abrasive article to modify said surface of said wafer.
- 57. A method according to claim 56 wherein said metal oxide comprises silicon dioxide.
- 58. A method according to claim 1 further comprising conditioning the three-dimensional, textured, fixed abrasive article either before, after or simultaneously with step (b).
- 59. A method according to claim 1 wherein the three-dimensional, textured, fixed abrasive article comprises abrasive composites.
- 60. A method according to claim 1 wherein the three-dimensional, textured, fixed abrasive article comprises precisely shaped abrasive composites.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation in part of U.S. Ser. No. 08/557,727, filed Nov. 13, 1995, now abandoned, which claims priority to U.S. Provisional Patent Application No. 60/004,161, filed Sep. 22, 1995, both of which are hereby incorporated by reference in its entirety.
US Referenced Citations (113)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0 447 885 A2 |
Sep 1991 |
EPX |
Continuation in Parts (1)
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Number |
Date |
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Parent |
557727 |
Nov 1995 |
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