Claims
- 1. A method of photolithography, wherein a conductive layer is provided, the method comprising:
forming an anti-reflective coating on the conductive layer, wherein the anti-reflective coating comprises a silicon-oxy-nitride layer; performing a nitrogen plasma treatment on the anti-reflective coating, for preventing a surface of the anti-reflective coating from being oxidized during a subsequent removal of a reworked photo-resist layer; and then forming and patterning a photo-resist layer on the anti-reflective coating, wherein portions of the treated anti-reflective coating are exposed, when the patterned photo-resist layer needs to be reworked, performed substeps comprising; removing the photo-resist layer; forming a second photo-resist layer on the treated anti-reflective coating; patterning the second photo-resist layer to expose portions of the treated anti-reflective coating; removing portions of the treated anti-reflective coating and the conductive layer using thesecond photo-resist layer as a mask; and removing the second photo-resist layer using phosphoric acid.
- 2. The method according to claim 1, wherein the conductive layer includes a poly-silicon layer.
- 3. The method according to claim 1, wherein the conductive layer includes a poly-silicide layer.
- 4. The method according to claim 1, wherein the conductive layer includes a metal layer.
- 5. The method according to claim 1, wherein after the step of removing the second photo-resist layer, sequentially removing the treated anti-reflective layer.
- 6. The method according to claim 5, the anti-reflective layer is removed by phorsphoric acid.
- 7. The method according to claim 1, wherein the nitrogen treatment is performed for 60 seconds.
- 8. The method according to claim 7, wherein the nitrogen treatment is performed at 400° C.
- 9 . The method according to claim 8, wherein the nitrogen treatment is performed with a pressure of 4Terr.
- 10. The method according to claim 9, wherein the nitrogen treatment is performed with a power of 700 W.
- 11. A method of photolithography comprising:
forming an anti-reflective coating on a conducive layer; performing a nitrogen plasma treatment on the anti-reflective coating for preventing a surface of the anti-reflective coating from being oxidized during a subsequent removal of a reworked photo-resist layer; forming a patterned photo-resist layer on the treated anti-reflective coating; removing the patterned photo-resist layer; forming a second photo-resist layer on the treated anti-reflective coating after the patterned photo-resist layer is removed, when the patterned photo-resist layer needs to be reworked; patterning the second photo-resist layer to expose portions of the treated anti-reflective coating; removing portions of the treated anti-reflective coating and the conductive layer by using the patterned second photo-resist layer as a mask; and removing the second photo-resist layer using phosphoric acid.
- 12. The method according to claim 11, wherein the anti-reflective coating is silicon-oxy-nitride layer.
- 13. The method according to claim 11, wherein the nitrogen treatment is performed at 60 seconds.
- 14. The method according to claim 13, wherein the nitrogen treatment is performed at 400° C.
- 15. The method according to claim 14, wherein the nitrogen treatment is performed with a pressure of 4 Torr.
- 16. The method according to claim 15, wherein the nitrogen treatment is performed with a power of 700 W.
- 17. The method according to claim 16, the second photo-resist layer is removed by H2SO4 and H2O2.
Priority Claims (1)
Number |
Date |
Country |
Kind |
87101054 |
Jan 1998 |
TW |
|
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority benefit of Taiwan application Ser. No. 87101054, filed Jan. 26, 1998, the full disclosure of which is incorporated herein by reference.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09072155 |
May 1998 |
US |
Child |
09827827 |
Apr 2001 |
US |