Claims
- 1. A method of preparing a poly-crystalline silicon film comprising:supplying reactive gases and carrier gases to a process chamber of a plasma chemical deposition system including a substrate; depositing an amorphous silicon film on the substrate by plasma discharging at a temperature 400° C. or more; after film deposition, transporting the substrate from the process chamber to a heating chamber attached to the plasma chemical deposition system without exposing the substrate to atmosphere external to the system and holding the substrate in the heating chamber to carry out dehydrogenation treatment of the amorphous silicon film; removing the substrate from the heating chamber after the dehydrogenation treatment; and irradiating the amorphous silicon film with a laser beam thereby changing the amorphous silicon film into a poly-crystalline silicon film.
- 2. A method according to claim 1, wherein the temperature of the substrate in the heating chamber is higher than that in the process chamber.
- 3. A method according to claim 1, wherein the plasma chemical deposition system is a cluster-type plasma chemical deposition system.
- 4. A method according to claim 1, wherein the depositing step is carried out with reactive and carrier gases supplied to the process chamber and the dehydrogenation treatment is carried out with the carrier gas supplied to the heating chamber.
- 5. A method according to claim 1, wherein the dehydrogenation treatment is carried out without a reactive gas.
- 6. A method according to claim 1, wherein irradiating step comprises the step of irradiating with an excimer laser beam.
- 7. A method according to claim 1, wherein the dehydrogenation treatment reduces the hydrogen content of the amorphous silicon film to less than 10%.
- 8. A method according to claim 1, wherein a period of leaving time t (seconds) of the substrate in the heating chamber, a thickness d (angstroms) of the amorphous silicon film, and a temperature (° C.) of the heating chamber at the time when the substrate is left in the chamber satisfy the following equation (1):t>d2/(A×exp B) (1) whereA=6.0×1014, B=−2.56×10−19/(k×(273+θ)), andk=1.38×10−23.
- 9. A method according to claim 1, wherein the plasma chemical deposition system is a single substrate processing plasma chemical deposition system.
- 10. A method according to claim 1, wherein transporting the substrate to the heating chamber is carried out through a path in a nitrogen or inactive gas atmosphere.
- 11. A method of preparing a thin film transistor comprising:supplying reactive gases and carrier gases to a process chamber of a plasma chemical deposition system including a substrate; depositing an amorphous silicon film on the substrate by plasma discharging at a temperature 400° C. or more; after film deposition, transporting the substrate from the process chamber to a heating chamber attached to the plasma chemical deposition system without exposing the substrate to atmosphere external to the system and holding the substrate in the heating chamber to carry out dehydrogenation treatment of the amorphous silicon film; removing the substrate from the heating chamber after the dehydrogenation treatment; irradiating the amorphous silicon film with a laser beam thereby changing the amorphous silicon film into a poly-crystalline silicon film; and forming a thin film transistor including the poly-crystalline silicon as an active semiconductor layer.
- 12. A method of preparing an active-matrix type liquid crystal display device comprising:supplying reactive gases and carrier gases to a process chamber of a plasma chemical deposition system including a substrate; depositing an amorphous silicon film on the substrate by plasma discharging at a temperature 400° C. or more; after film deposition, transporting the substrate from the process chamber to a heating chamber attached to the plasma chemical deposition system without exposing the substrate to atmosphere external to the system and holding the substrate in the heating chamber to carry out dehydrogenation treatment of the amorphous silicon film; removing the substrate from the heating chamber after the dehydrogenation treatment; irradiating the amorphous silicon film with a laser beam thereby changing the amorphous silicon film into a poly-crystalline silicon film; and forming an active-matrix type liquid crystal display device including a thin film transistor formed from the poly-crystalline silicon as an active semiconductor layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-260303 |
Sep 1997 |
JP |
|
Parent Case Info
This is a Continuation-in-part of National Application Ser. No. 09/152,256 filed Sep. 14, 1998 now U.S. Pat. No. 6,099,918.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5766344 |
Zhang et al. |
Jun 1998 |
A |
Foreign Referenced Citations (1)
Number |
Date |
Country |
07221035 |
Aug 1995 |
JP |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09/152256 |
Sep 1998 |
US |
Child |
09/468217 |
|
US |