Claims
- 1. A method of preventing seam defects on narrow, isolated lines in the active region on a semiconductor device layer during CMP process with dummy metal structures comprising the steps of:
providing dummy metal structures with features thereof of widths to have fill up rates that match the narrow, isolated lines on said semiconductor device layer and CMP polishing said isolated line or other line and said dummy metal structures.
- 2. The method of claim 1 wherein said narrow, isolated lines have features that are about 0.3 micron or less and said dummy metal structures include a features with widths less than about 0.6 micron.
- 3. The method of claim 1 wherein said dummy metal structures are of a density and spacing from said narrow, isolated lines to prevent Galvanic corrosion.
- 4. The method of claim 3 wherein said dummy metal structures are in the shape of block with narrow wings added on either end to present uniform capacitance to active lines in the metal layer or layers above and/or below the layer containing the dummy metal.
- 5. The method of claim 4 wherein said dummy metal structures have narrow features with a width dimensions of 0.6 micron or less.
- 6. A method of preventing seam defects in narrow, isolated lines in the active region of a layer on a semiconductor substrate during CMP process comprising the steps of:
forming holes on a dielectric layer on said semiconductor substrate of a shape to provide said narrow, isolated metal lines in the active regions of said dielectric layer and forming holes on said dielectric layer of a shape to provide dummy metal structures having features thereof with widths 0.6 micron or less utilizing copper metallization, electroplating copper into said holes to form said narrow, isolated metal lines and said dummy metal structures; and CMP polishing said narrow, isolated lines and said dummy metal structures to remove excess copper.
- 7. The method of claim 6 wherein the shape of said holes to form said dummy metal structures is such that each of said dummy metal structures formed comprise a square center portion and a wing extending from opposite ends of the square center portion and with each of said wing having widths of about 0.6 micron or less to present superfill protrusions to match those of the narrow, isolated lines.
- 8. The method of claim 6 wherein said wherein said holes to form said dummy metal structures are of a density and spacing from said narrow, isolated lines to prevent Galvanic corrosion during CMP polishing following electroplating copper into said hole to remove excess copper.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a continuation-in-part application of application Ser. No. 10/123528 filed Apr. 17, 2002. entitled “Method of Preventing Seam Defects In Isolated Lines.” This application is incorporated herein by reference.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
10123528 |
Apr 2002 |
US |
Child |
10322763 |
Dec 2002 |
US |