Method of processing substrate

Abstract

A method of processing an organic film pattern formed on a substrate, includes, in sequence of, a fusion/deformation step of fusing and thereby deforming the organic film pattern, and a third removal step of removing at least a part of the fused and deformed organic film pattern.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a flow-chart showing steps to be carried out in the method in accordance with the first embodiment of the present invention.

FIG. 1B is a flow-chart showing steps to be carried out in the method in accordance with the second embodiment of the present invention.

FIG. 1C is a flow-chart showing steps to be carried out in the method in accordance with the third embodiment of the present invention.

FIG. 2A is a flowchart showing steps to be carried out in a first example of the first removal step.

FIG. 2B is a flowchart showing steps to be carried out in a second example of the first removal step.

FIG. 2C is a flowchart showing, steps to be carried out in a third example of the first removal step.

FIG. 3A is a flowchart showing steps to be carried out in a first example of the second removal step.

FIG. 3B is a flowchart showing steps to be carried out in a second example of the second removal step.

FIG. 3C is a flowchart showing steps to be carried out in a third example of the second removal step.

FIG. 4A is a flowchart showing steps to be carried out in a first example of the third removal step.

FIG. 4B is a flowchart showing steps to be carried out in a second example of the third removal step.

FIG. 4C is a flowchart showing steps to be carried out in a third example of the third removal step.

FIG. 4D is a flowchart showing steps to be carried out in a fourth example of the third removal step.

FIG. 5 is a planar view of an example of an apparatus for processing a substrate.

FIG. 6 is a planar view of another example of an apparatus for processing a substrate.

FIG. 7 is a schematic showing candidates of process units to be equipped in an apparatus for processing a substrate.

FIG. 8 is a cross-sectional view of an example of a unit for applying chemical solution to an organic film pattern.

FIG. 9 is a cross-sectional view of an example of a unit for applying gas atmosphere to an organic film pattern.

FIG. 10 is a cross-sectional view of another example of a unit for applying gas atmosphere to an organic film pattern.

FIG. 11A shows steps to be carried out in the first conventional method.

FIG. 11B shows steps to be carried out in the second conventional method.

FIG. 11C shows steps to be carried out in the third conventional method.

FIG. 12 illustrates a degree of alteration of an alterated layer in dependence on causes by which the alterated layer is formed.

FIG. 13 is a graph showing relation between a concentration of amine in chemical solution and a removal rate.

FIG. 14 illustrates variation of an alterated layer to which only a step of applying chemical solution is applied.

FIG. 15 illustrates variation of an alterated layer to which an ashing step and a step of applying chemical solution are applied in this order.

FIG. 16 illustrates a difference with respect to how an organic film pattern is processed in a fusion/deformation step.

FIG. 17A is a graph showing relation between a concentration of amine in chemical solution and a removal rate, in association with whether an organic film pattern is alterated or not.

FIGS. 18A, 18B, 18C, 18D, 18E, 18F and 18G are plan and cross-sectional views of a thin film transistor (TFT) device in a conventional method of fabricating a TFT substrate, including a conventional fusion/deformation/reflow process.

FIGS. 19A, 19B, 19C, 19D, 19E, 19F and 19G are plan and cross-sectional views of a thin film transistor (TFT) device in a method of fabricating a TFT substrate, in accordance with the fourth embodiment of the present invention.

FIGS. 20A, 20B, 20C, 20D, 20E, 20F and 20G are plan and cross-sectional views of a thin film transistor (TFT) device in a method of fabricating a TFT substrate, in accordance with the fifth embodiment of the present invention.

Claims

1. A method of processing an organic film pattern formed on a substrate, comprising, in sequence of: a fusion/deformation step of fusing and thereby deforming said organic film pattern; anda third removal step of removing at least a part of the fused and deformed organic film pattern.

2. The method as set forth in claim 1, further comprising a second heating step of heating the fused and deformed organic film pattern, said second heating step being carried out after said fusion/deformation step and before said third removal step.

3. The method as set forth in claim 2, further comprising a third heating step of heating the fused and deformed organic film pattern, said third heating step being carried out after said third removal step.

4. The method as set forth in claim 3, further comprising a first heating step of heating said organic film pattern, said first heating step being carried out before said fusion/deformation step.

5. The method as set forth in claim 1, further comprising a first removal step of removing at least one of an alterated layer and a deposited layer formed on a surface of said organic film pattern, said first removal step being carried out before said fusion/deformation step.

6. The method as set forth in claim 5, further comprising a second heating step of heating the fused and deformed organic film pattern, said second heating step being carried out after said fusion/deformation step and before said third removal step.

7. The method as set forth in claim 6, further comprising a third heating step of heating the fused and deformed organic film pattern, said third heating step being carried out after said third removal step.

8. The method as set forth in claim 7, further comprising a first heating step of heating said organic film pattern, said first heating step being carried out before said first removal step.

9. The method as set forth in claim 5, further comprising a second removal step of removing a part of said organic film pattern, said second removal step being carried out after said first removal step and before said fusion/deformation step.

10. The method as set forth in claim 9, further comprising a second heating step of heating the fused and deformed organic film pattern, said second heating step being carried out after said fusion/deformation step and before said third removal step.

11. The method as set forth in claim 10, further comprising a third heating step of heating the fused and deformed organic film pattern, said third heating step being carried out after said third removal step.

12. The method as set forth in claim 11, further comprising a first heating step of heating said organic film pattern, said first heating step being carried out before said first removal step.

13. The method as set forth in claim 1, further comprising a temperature controlling step of keeping constant a temperature at which said substrate is processed, said temperature controlling step being carried out immediately before, said fusion/deformation step.

14. The method as set forth in claim 1, further comprising originally forming said organic film pattern on said substrate by printing.

15. The method as set forth in claim 1, further comprising originally forming said organic film pattern on said substrate by photolithography.

16. The method as set forth in claim 1, further comprising originally forming a photosensitive organic film as said organic film pattern on said substrate.

17. The method as set forth in claim 16, wherein said photosensitive organic film is comprised of one of a positive type photosensitive organic film and a negative type photosensitive organic film.

18. The method as set forth in claim 17, wherein said positive type photosensitive organic film contains novolak resin as a principal constituent.

19. The method as set forth in claim 16, wherein said photosensitive organic film is soluble in alkali, if exposed to light.

20. The method as set forth in claim 9, wherein one of said alterated layer and said deposited layer is selectively removed in at least one of said first and second removal steps.

21. The method as set forth in claim 9, wherein one of said alterated layer and said deposited layer is selectively removed, and a non-alterated portion of said organic film pattern is caused to appear in at least one of said first and second removal steps.

22. The method as set forth in claim 9, wherein a non-alterated portion of said organic film pattern is partially removed in at least one of said first and second removal steps.

23. The method as set forth in claim 1, wherein one of an alterated layer and a deposited layer formed on the fused and deformed organic film pattern, or one of an alterated layer and a deposited layer formed around the fused and deformed organic film pattern is selectively removed in said third removal step.

24. The method as set forth in claim 1, wherein one of an alterated layer and a deposited layer formed on the fused and deformed organic film pattern, or one of an alterated layer and a deposited layer formed around the fused and deformed organic film pattern is selectively removed in said third removal step for causing the fused and deformed organic film pattern to appear.

25. The method as set forth in claim 23, wherein the fused and deformed organic film pattern is partially removed after said one of an alterated layer and a deposited layer was removed.

26. The method as set forth in claim 4, wherein at least one of water, acid and alkali having penetrated said organic film pattern is removed in at least one of said first, second and third heating steps.

27. The method as set forth in claim 4, wherein, when an adhesive force between said organic film pattern and said substrate or an underlying film is lowered, at least one of said first, second and third heating steps enhances said adhesive force.

28. The method as set forth in claim 1, wherein a heating step for forming said organic film pattern is carried out at a temperature equal to or smaller than a temperature at which said organic film pattern is cross-linked.

29. The method as set forth in claim 4, wherein said organic film pattern is heated at a temperature equal to or smaller than a temperature at which said organic film pattern is cross-linked, during a heating step for forming said organic film pattern and said first heating step.

30. The method as set forth in claim 2, wherein said organic film pattern is heated at a temperature equal to or smaller than a temperature at which said organic film pattern is cross-linked, during a heating step for forming said organic film pattern and said second heating step.

31. The method as set forth in claim 3, wherein said organic film pattern is heated at a temperature equal to or smaller than a temperature at which said organic film pattern is cross-linked, during a heating step for forming said organic film pattern and said third heating step.

32. The method as set forth in claim 4, wherein said organic film pattern is heated at a temperature equal to or smaller than a temperature at which said organic film pattern is cross-linked, in a heating step for forming said organic film pattern, said first heating step, said second heating step, and said third heating step.

33. The method as set forth in claim 1, wherein a heating step for forming said organic film pattern is carried out at a temperature in the range of 50 to 150 degrees centigrade both inclusive.

34. The method as set forth in claim 33, wherein a heating step for forming said organic film pattern is carried out at a temperature in the range of 100 to 130 degrees centigrade both inclusive.

35. The method as set forth in claim 4, wherein said first heating step is carried out at a temperature lower than a temperature at which said second heating step is carried out.

36. The method as set forth in claim 4, wherein a heating step for forming said organic film pattern and said first heating step are carried out at a temperature lower than a temperature at which said second heating step is carried out.

37. The method as set forth in claim 3, wherein said second heating step is carried out at a temperature lower than a temperature at which said third heating step is carried out.

38. The method as set forth in claim 2, wherein a heating step for forming said organic film pattern, said first heating step, and said second heating step are carried out at a temperature lower than a temperature at which said third heating step is carried out.

39. The method as set forth in claim 4, wherein said first heating step is carried out at a temperature lower than a temperature at which said third heating step is carried out.

40. The method as set forth in claim 4, wherein a heating step for forming said organic film pattern and said first heating step are carried out at a temperature lower than a temperature at which said third heating step is carried out.

41. The method as set forth in claim 4, wherein a heating step for forming said organic film pattern, said first heating step, said second heating step, and said third heating step are carried out for 60 to 300 seconds both inclusive.

42. The method as set forth in claim 5, wherein said alterated layer formed on said organic film pattern is caused by at least one of aging, thermal oxidation and heat curing.

43. The method as set forth in claim 5, wherein said alterated layer formed on said organic film pattern is caused by wet-etching.

44. The method as set forth in claim 5, wherein said alterated layer formed on said organic film pattern is caused by at least one of dry-etching and ashing.

45. The method as set forth in claim 5, wherein said alterated layer formed on said organic film pattern is caused by deposition resulted from dry-etching.

46. The method as set forth in claim 5, wherein said deposited layer formed on said organic film pattern is caused by dry-etching.

47. The method as set forth in claim 1, wherein an area of said organic film pattern is increased in said fusion/deformation step

48. The method as set forth in claim 1, wherein organic film patterns disposed adjacent to each other are joined in said fusion/deformation step

49. The method as set forth in claim 1, wherein said organic film pattern is planarized in said fusion/deformation step

50. The method as set forth in claim 1, wherein said organic film pattern is deformed in said fusion/deformation step such that said organic film pattern is turned into an electrically insulating film covering therewith a circuit pattern formed on said substrate.

51. The method as set forth in claim 1, wherein said organic film pattern is deformed in said fusion/deformation step by making contact with organic solution to cause fusion reflow.

52. The method as set forth in claim 52, wherein said organic solution contains at least one of the following organic solvents (R indicates an alkyl group or a substitutional alkyl group, Ar indicates a phenyl group or an aromatic ring other than a phenyl group): alcohol (R—OH);alkoxyalcohol;ether (R—O—R, Ar—O—R, Ar—O—Ar);ester;ketone;glycol;alkylene glycol; andglycol ether.

53. The method as set forth in claim 51, wherein said organic film pattern is exposed to vapor of said organic solvent in said fusion reflow.

54. The method as set forth in claim 51, wherein said organic film pattern is immersed into said organic solvent in said fusion reflow.

55. The method as set forth in claim 51, wherein said fusion/deformation step or said fusion reflow is comprised of a step of applying gas atmosphere to said organic film pattern.

56. The method as set forth in claim 55, wherein said step of applying gas atmosphere to said organic film patter is carried out in gas atmosphere of said organic solvent.

57. The method as set forth in claim 9, wherein at least a part of at least one of said first, second and third removal steps is comprised of a step of applying chemical solution to said organic film pattern.

58. The method as set forth in claim 9, wherein at least a part of at least one of said first, second and third removal steps is comprised of a step of ashing said organic film pattern.

59. The method as set forth in claim 1, wherein said third removal step is comprised of a step of twice applying chemical solution to said organic film pattern through the use of two different chemical solutions.

60. The method as set forth in claim 5, wherein said first removal step is comprised of a first step of applying chemical solution to said organic film pattern.

61. The method as set forth in claim 9, wherein at least one of said second and third removal steps is comprised of a second step of applying chemical solution to said organic film pattern.

62. The method as set forth in claim 5, wherein said first removal step is comprised of, in sequence of, ashing said organic film pattern, and a first step of applying chemical solution to said organic film pattern.

63. The method as set forth in claim 9, wherein at least one of said second and third removal steps is comprised of, in sequence of, ashing said organic film pattern, and a second step of applying chemical solution to said organic film pattern.

64. The method as set forth in claim 1, wherein said third removal step is comprised of a first step of applying chemical solution to said organic film pattern, and a second step of applying chemical solution to said organic film pattern.

65. The method as set forth in claim 9, wherein each of said first, second and third removal steps is comprised of a step of applying chemical solution to said organic film pattern.

66. The method as set forth in claim 58, wherein films formed on said substrate are etched in said ashing step through the use of at least one of plasma, ozone and ultraviolet rays.

67. The method as set forth in claim 9, further comprising an exposure step of exposing said organic film pattern to light immediately before at least one of said first, second and third removal steps.

68. The method as set forth in claim 60, further comprising an exposure step of exposing said organic film pattern to light immediately before at least one of said first and second steps.

69. The method as set forth in claim 63, further comprising a back-exposure step of exposing said organic film pattern to light through a lower surface of said substrate between said fusion/deformation step and said third removal step or between said fusion/deformation step and said second step.

70. The method as set forth in claim 67, wherein said organic film pattern is exposed to light in said exposure step only in an area associated with a predetermined area of said substrate.

71. The method as set forth in claim 69, wherein said organic film pattern is exposed to light in said back-exposure step only in an area associated with a predetermined area of said substrate.

72. The method as set forth in claim 67, wherein said organic film pattern is exposed to light in said exposure step in an area associated with a predetermined area of said substrate by radiating light entirely over said area or by scanning said area with spot-light.

73. The method as set forth in claim 70, wherein said predetermined area has an area equal to or greater than 1/10 of an area of said substrate.

74. The method as set forth in claim 67, wherein said organic film pattern is exposed to ultra-violet rays, fluorescence, or natural light in said exposure step.

75. The method as set forth in claim 68, wherein at least one of said first and second steps is comprised of a development step of developing said organic film pattern through the use of chemical solution having a function of developing said organic film pattern.

76. The method as set forth in claim 68, wherein at least one of said first and second steps is comprised of an overdevelopment step of carrying out n-th development of said organic film pattern through the use of chemical solution having a function of developing said organic film pattern, wherein n indicates an integer equal to or greater than two.

77. The method as set forth in claim 68, wherein at least one of said first and second steps is comprised of a development step of developing said organic film pattern through the use of chemical solution not having a function of developing said organic film pattern, but having a function of fusing said organic film pattern.

78. The method as set forth in claim 77, wherein said chemical solution is comprised of a solution obtained by diluting separating agent.

79. The method as set forth in claim 75, wherein said chemical solution having a function of developing said organic film pattern is comprised of TMAH (tetramethylammonium hydroxide) or inorganic alkaline aqueous solution.

80. The method as set forth in claim 79, wherein said inorganic alkaline aqueous solution is one of NaOH aqueous solution and CaOH aqueous solution.

81. The method as set forth in claim 1, wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses from one another.

82. The method as set forth in claim 9, wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses from one another, and a thin portion among said portions of said organic film pattern is further thinned in at least one of said first, second and third removal steps.

83. The method as set forth in claim 9, wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses from one another, and a thin portion among said portions of said organic film pattern is removed in at least one of said first, second and third removal steps.

84. The method as set forth in claim 1, wherein said organic film pattern is kept not exposed to light until said fusion/deformation step is carried out after said organic film pattern was originally formed on said substrate.

85. The method as set forth in claim 67, wherein said organic film pattern is kept not exposed to light until said exposure step is carried out after said organic film pattern was originally formed on said substrate.

86. The method as set forth in claim 1, further comprising a patterning step of patterning an underlying film formed below said organic film pattern, with said organic film pattern being used as a mask, before said fusion/deformation step is applied to said organic film pattern.

87. The method as set forth in claim 1, further comprising a patterning step of patterning an underlying film formed below said organic film pattern, with said organic film pattern being used as a mask, before said fusion/deformation step, said first removal step or said first heating step is applied to said organic film pattern.

88. The method as set forth in claim 1, further comprising a patterning step of patterning an underlying film formed below said organic film pattern, with said organic film pattern being used as a mask, after said second heating step, said third removal step or said third heating step was applied to said organic film pattern.

89. The method as set forth in claim 1, further comprising a patterning step of patterning an underlying film formed below said organic film pattern, with said organic film pattern being used as a mask, after said third removal step was applied to said organic film pattern.

90. The method as set forth in claim 86, wherein said underlying film is patterned to be tapered or step-liked in said patterning step.

91. The method as set forth in claim 86, wherein said underlying film is comprised of a plurality of films, and some of said films are patterned into different patterns from one another in said patterning step.

92. The method as set forth in claim 68, wherein said chemical solution used in said first or second step contains at least acid chemical.

93. The method as set forth in claim 68, wherein said chemical solution used in said first or second step contains at least organic solvent.

94. The method as set forth in claim 68, wherein said chemical solution used in said first or second step contains at least alkaline chemical.

95. The method as set forth in claim 68, wherein said chemical solution used in said first or second step contains at least amine.

96. The method as set forth in claim 68, wherein said chemical solution used in said first or second step contains at least organic solvent and amine.

97. The method as set forth in claim 68, wherein said chemical solution used in said first or second step contains at least amine and water.

98. The method as set forth in claim 68, wherein said chemical solution used in said first or second step contains at least alkaline chemical and amine.

99. The method as set forth in claim 95, wherein said amine is selected from a group consisting of monoethyl amine, diethyl amine, triethyl amine, monoisopyl amine, diisopyl amine, triisoply amine, monobutyl amine, dibutyl amine, tributyl amine, hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.

100. The method as set forth in claim 95, wherein said chemical solution contains said amine in the range of 0.01 to 10 weight % both inclusive.

101. The method as set forth in claim 100, wherein said chemical contains said amine in the range of 0.05 to 5 weight % both inclusive.

102. The method as set forth in claim 101, wherein said chemical contains said amine in the range of 0.05 to 2.0 weight % both inclusive.

103. The method as set forth in claim 68, wherein said chemical solution used in said first or second step contains anticorrosive.

104. The method as set forth in claim 1, wherein said organic film pattern is formed by patterning an underlying film thereof with said organic film pattern being used as a mask before said fusion/deformation step was carried out.

105. The method as set forth in claim 104, further comprising a step of further patterning said underlying film with said organic film pattern being used as a mask after said third removal step was carried out.

106. The method as set forth in claim 1, wherein at least one of a step of exposing to light, a development step, a wet-etching step and dry-etching step is applied to said organic film pattern before said fusion/deformation step is carried out.

107. The method as set forth in claim 1, further comprising a step of forming a circuit having a high resistance to dielectric breakdown.

108. A method of fabricating a device, including a step of carrying out the method as defined in any one of claims 1 to 12.

109. The method as set forth in claim 108, wherein said device is comprised of a display device.

110. The method as set forth in claim 108, wherein said device is comprised of a semiconductor device.

111. The method as set forth in claim 108, wherein said device is comprised of a liquid crystal display device.

112. The method as set forth in claim 108, wherein said device is comprised of an EL display device.

113. The method as set forth in claim 108, wherein said device is comprised of a field emission display device.

114. The method as set forth in claim 108, wherein said device is comprised of a plasma display device.