Number | Date | Country | Kind |
---|---|---|---|
1-318560 | Dec 1989 | JPX |
This is a continuation of application Ser. No. 07/970,248 filed Nov. 2, 1992, now abandoned, which is itself a continuation of application Ser. No. 07/620,623, filed Dec. 1, 1990, and also abandoned.
Number | Name | Date | Kind |
---|---|---|---|
3540950 | Joseph | Nov 1970 | |
3590471 | Lepselter | Jul 1971 | |
3673679 | Carbajal, III et al. | Jul 1972 | |
3888706 | Dingwall | Jun 1975 | |
4242691 | Kotani et al. | Dec 1980 | |
4395433 | Nagakubo et al. | Jul 1983 | |
4441932 | Akasaka et al. | Apr 1984 | |
4618381 | Sato et al. | Oct 1986 | |
4737471 | Shirato et al. | Apr 1988 | |
4791074 | Tsunashima et al. | Dec 1988 | |
4861729 | Fuse et al. | Aug 1989 | |
4912065 | Mizuno et al. | Mar 1990 | |
4948744 | Kita | Aug 1990 | |
5124272 | Saito et al. | Jun 1992 | |
5183777 | Doki et al. | Feb 1993 | |
5242859 | Degelormo et al. | Sep 1993 | |
5338697 | Aoki et al. | Aug 1994 | |
5387545 | Kiyota et al. | Feb 1995 | |
5599735 | Mosleki | Feb 1997 |
Number | Date | Country |
---|---|---|
316165A3 | May 1989 | EPX |
322921 | Jul 1989 | EPX |
32292 | Jul 1989 | EPX |
0322921 | Jul 1989 | EPX |
0413982 | Feb 1991 | EPX |
417457A2 | Mar 1991 | EPX |
2245852 | Mar 1974 | DEX |
63166220 | Dec 1986 | JPX |
62-271475 | Apr 1987 | JPX |
63-239939 | May 1988 | JPX |
63-166220 | Jul 1988 | JPX |
1192159 | Feb 1989 | JPX |
1384206 | Feb 1975 | GBX |
8201380 | Oct 1981 | WOX |
Entry |
---|
"Metal-Oxide-Silicon Field-Effect Transistor Made by Means of Solid-Phase Doping", by Gong et al.; J. Appl. Phys. 65 (11), 1 Jun. 1989 pp. 4435-4437. |
Leung, D.L., et al., "CMOS Devices Fabricated in Thin Epitaxial Silicon on Oxide", 1989 IEEE SOS/SOI Technology Conference Oct., 1989, pp. 74-75. |
"Ultrashallow, high doping of boron using molecular layer doping"; by Nishizawa; Applied Physics Letters; 56(1990)2 Apr., No. 14 pp. 1334-1335. |
"Simple-Structured PMOSFET Fabricated Using Molecular Layer Doping", Jun-Ichi Nishizawa, et al., IEEE, 1990 pp. 105-106. |
L. Ming, et al. "Doping Reaction of PH.sub.3 and B.sub.2 H.sub.6 with Si(100)" J. Appl. Phys. vol. 59, No. 12 (Jun. 1986) pp. 4032-4037. |
Ghandi, Ed. VLSI Fabrication Principles, Wiley & Sons, NY (1983) p. 234. |
Number | Date | Country | |
---|---|---|---|
Parent | 970248 | Nov 1992 | |
Parent | 620623 | Dec 1990 |