BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic representation of an illumination step during lithographic processing using an immersion lithography system, according to prior art.
FIG. 2 is a schematic representation of an immersion lithographic system, according to prior art.
FIG. 3 is a flow diagram of an example method for characterising an immersion lithographic process according to the first embodiment of the present invention.
FIG. 4 is a schematic representation of a system that can be used for performing a method for characterising an immersion lithographic process according to the first embodiment of the present invention.
FIG. 5 is a schematic representation of an example contacting system for contacting immersion liquid and a device according to the second embodiment of the present invention.
FIG. 6 is a schematic representation of a computing system that may be used for performing methods for characterising immersion lithographic processing, according to a fifth embodiment of the present invention.
FIG. 7
a to FIG. 7d illustrates a schematic view of an exposure sequence (FIG. 7a), a total soak time distribution (FIG. 7b), a pre-soak time distribution (FIG. 7c) and a post-soak time distribution (FIG. 7d) for immersion lithographic processing as may occur and characterised in embodiments of the present invention.
FIG. 8 illustrates an average intra-field soak fingerprint as function of the relative XY movements of the immersion showerhead and the device, as may occur and characterised in embodiments of the present invention.
FIG. 9 illustrates a post-soak time distribution for a wafer exposure using a smaller printing field compared to the distribution shown in FIG. 7d.
FIG. 10 illustrates parameters related to critical dimension of a feature according to a model as used for evaluating critical dimension in an example image performance characteristic determination for illustrating advantages of embodiments according to the present invention.
FIG. 11
a to FIG. 12b illustrate CD parameter variations as function of pre-soak (FIG. 11a and FIG. 12a) and post-soak (FIG. 11b and FIG. 12b) time for a device without top coating layer (FIG. 11a and FIG. 11b) and a device with top coating layer (FIG. 12a and FIG. 12b) as obtained in a virtual immersion lithography process, illustrating advantages of embodiments according to the present invention.
FIG. 13
a and FIG. 13b illustrate CDMid parameter variations as function of post soak time for the average intra-field (FIG. 13a) and the residual intra-field (FIG. 13b) for the different soak quadrants, resulting from applying an immersion lithography process illustrating advantages of embodiments according to the present invention.
FIG. 14
a to FIG. 14c illustrate CDMid parameter variations as function of post soak time for the full wafer print field as measured with an immersion lithographic system (FIG. 14a), the corresponding average field in the different soak quadrants (FIG. 14b) and a correlation graph between the average field in the different soak quadrants and the simulated soak time results (FIG. 14c) for a device with a first top coating, illustrating advantages of embodiments according to the present invention.
FIG. 15
a to FIG. 15b illustrate the a correlation graph between the average field in the different soak quadrants obtained using immersion lithographic processing and the simulated soak time results for a device without top coating for the CD at the top surface of the resist (FIG. 15a) and for the resist thickness FIG. 15b, illustrating advantages of embodiments according to the present invention.
FIG. 16
a to FIG. 16c illustrate the full wafer print field as measured with an immersion lithographic system (FIG. 16a), the corresponding average field in the different soak quadrants (FIG. 16b) and a correlation graph between the average field in the different soak quadrants and the simulated soak time results (FIG. 16c) for a device with a first top coating, illustrating advantages of embodiments according to the present invention.